MTK-20140
Abstract: P3901
Text: PRODUCT DATA SHEET P3901 ADSL Transformer Features Applications ∗ ∗ ∗ ∗ ∗ ∗ ∗ Alcatel DynaMiTe CPE ∗ ADSL over ISDN Lead-free Pb-free Low Distortion IEC 950 and UL 60950 Certified UL Recognized Component Supplementary Insulation Surface Mount
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P3901
P3901
MTK-20140
60950-1-03/UL60950-1,
250Vrms,
E203175.
12kVrms,
E203175
MTK-20140
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Untitled
Abstract: No abstract text available
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Untitled
Abstract: No abstract text available
Text: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0 <>CB04CA30>@=B31B7=< K0 <>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0 <>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<
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70l09
Abstract: No abstract text available
Text: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0 <>CB04CA30>@=B31B7=< K0 <>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0 <>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<
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CB04CA30>
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70l09
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Untitled
Abstract: No abstract text available
Text: K0 7<5:30/<202C/:0=CB>CB K0#33B0$EE9BB0:/AA0 K0 <>CB04CA30>@=B31B7=< K0 <>CB0@3D3@A30>=:/@7BG0>@=B31B7=< K0 <>CB07<6@CA601C@@3<B0>@=B31B7=< K0%D3@:=/20/<20A6=@B017@1C7B0>@=B31B7=< K0%D3@0D=:B/530>@=B31B7=<
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CB04CA30>
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0AF990+
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Untitled
Abstract: No abstract text available
Text: F20'&- + ) &!BFAA0 3@73A BFAA,001B7D30& (7<5:30%CB>CB .3('. )*'$- 3 '3,# 3/BC@3A J00*<7D3@A/:00 <>CB0E7B60/1B7D30& J00&@=5@/;/0:30%CB>CB0+=:B/5303DA17BAF14 J00&@=5@/;/0:30%CB>CB0C@@3<B03EA17BAA14 J00 7560 447173<1G0C>0B=0A1 J005F+9A8F0CF7:7/@G0%CB>CB
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1B7D30&
CB0E7B60/1B7D30&
B/5303DA17BAF14
B03EA17BAA14
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317471/B7
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BC701
Abstract: No abstract text available
Text: F20'&- + ) '"FA9'"BAAA0)3@73A FA-070BAAA-001B7D30' )7<5:30&CB>CB .3 '. )*'$- 3 '3,# 3/BC@3A J00+<7D3@A/:00 <>CB0E7B60/1B7D30' J00'@=5@/;/0:30&CB>CB0,=:B/5303DA17BAF14 J00'@=5@/;/0:30&CB>CB0C@@3<B03EA17BAF14 J00 =@13201C@@3<B0A6/@7<504=@0>/@/:3:0=>3@/B7=<
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FA-070BAAA-00
1B7D30'
CB0E7B60/1B7D30'
B/5303DA17BAF14
B03EA17BAF14
13201C@
J005F
271/B=
B31B7
40F0BC
BC701
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Untitled
Abstract: No abstract text available
Text: F20'&- + ) &# BCAA0 3@73A BCAA,001B7D30& (7<5:30%CB>CB .3('. )*'$- 3 '3,# 3/BC@3A J00*<7D3@A/:00 <>CB0E7B60/1B7D30& J00&@=5@/;/0:30%CB>CB0+=:B/5303A17BAF14 J00&@=5@/;/0:30%CB>CB0C@@3<B03A17BAF14 J00#3271/:0(/43BG0>>@=D/:0 $AAB7B60*"AAB7B
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1B7D30&
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B/5303A17BAF14
B03A17BAF14
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J005F
271/B=
13201C@
B31B7
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Untitled
Abstract: No abstract text available
Text: J0 7;5930/;202B/90<BA=BA J0#33A0$EE9BB09/@@0 J0 ;=BA04B@30=?<A31A7<; J0 ;=BA0?3C3?@30=<9/?7AF0=?<A31A7<; J0 ;=BA07;6?B@601B?3;A0=?<A31A7<; J0%C3?9</20/;20@6<?A017?1B7A0=?<A31A7<; J0%C3?0C<9A/530=?<A31A7<;
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BA04B
A31A7<
A/530=
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054020D22.
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SPHV402
Abstract: TO36 TO114
Text: 8440355 SPACE SPACE POWER POWER E L E C T R O N I C S 89C ELECTRONICS "flT 00115 D T-3 3-0/ DE~|fl44Q3SS •••••US t Ni-Rel PLANAR POWER 60 AMP P B A S E T O E M I T T E R S A T U R A T I O N V O L T A G E 3.5 S w 2 . 0 UI CD > 1 . 5 ." 1 TA-" - 5 5
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fl44Q3SS
166WOT
O-114
SPHV405
SPHV406
SPHV407
SPHV408
SPHV409
SPHV420
SPHV421
SPHV402
TO36
TO114
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2n706
Abstract: 89012 2N706A 2N753 6CB6 2n 753 2n 706 Thomson-CSF bb
Text: 2N 706 A 2N753 NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L TRANSISTORS NPN SILIC IU M , E P IT A X IA U X - Small signal amplification A m plifica tio n petits signaux - Low current fast switching Commutation rapide faible courant Maximum power dissipation
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2N753
2N753
706page
2n706
89012
2N706A
6CB6
2n 753
2n 706
Thomson-CSF bb
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2N706
Abstract: 2N753 89012 2N706A 2n 706
Text: 2N 706 A 2 N 75 3 NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L TRANSISTORS NPN SILIC IU M , E P IT A X IA U X - Small signal amplification A m plifica tio n petits signaux - Low current fast switching Commutation rapide faible courant Maximum power dissipation
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2N753
2N753
2N706
89012
2N706A
2n 706
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marking 1A
Abstract: TMPT918 pt2222a
Text: NPN TRANSISTORS S O T -2 3/T O -23 6 A B 3 ELECTRICAL CHARACTERISTICS at T . = 25°C V V BR CBO v lBR)CEO Vishiebo Max. @ V CB Device Type v CE(sat) DC Current Gain ^CBO hFE hFE @ lc @ v ce Max. @ lc Min. Max. (mA) (V) (V) (nA) (V) 20 5.0 100 20 110 220 2.0
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BCW31
BCW32
BCW33
BCW60A
BCW60B
BCW60C
BCW60D
BCW65A
BCW65B
BCW66F
marking 1A
TMPT918
pt2222a
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b5E bb53531 Q037flSb 553 • APX D BSS50 to 52 N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving. P-N-P complements are the BSS60, BSS61 and BSS62.
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bb53531
Q037flSb
BSS50
BSS60,
BSS61
BSS62.
BSS50
BSS51
BSS52
bbS3531
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BEC npn
Abstract: SOT-23 EBC PT2221 N54 SOT-23
Text: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|
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D5G433Ô
BEC npn
SOT-23 EBC
PT2221
N54 SOT-23
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE h lE » bb53^31 0058121 855 2N29 U S 2N2905A APX A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes designed primarily for high-speed switching and driver applications for industrial service. QUICK REFERENCE DATA
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2N2905A
2N2905
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3R31 0031704 72T M A P X NPN 1 GHz video transistors £ Product specification BFQ232; BFQ232A N AflER PHILIPS/DISCRETE DESCRIPTION b'JE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a
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bbS3R31
BFQ232;
BFQ232A
O-126)
BFQ252
D03170fl
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transistor ESM 30
Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950
Text: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os cillator stage in T V VH F tuners.
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CB-76
100MA
-C12e
transistor ESM 30
transistor ESM
transistor h21e
752 transistor
IC 282
ft950
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2SB541
Abstract: 2SD388 C14A 2SD388 A 2sd388/2sb541 251C audio amplifier 50w 50v
Text: 2SD 388/2SB541 2SD388/2SB541 npn/ pnp E.nm * y =• > h 7 v * * * NPN/PNP SILICON TRIPLE DIFFUSED MESA TRANSISTOR ffl/A u d io Frequency Power Amplifier WttmZPACKAGE DIMENSIONS Unit:mm ft St/FEA T U R E • 40~ 50W H i-Fi 7 v ^2 y t v 9 ') '<V — \ 7 v v 7 9 7;
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2SD388
2SB541
2SD388/2SB541
2SB541
2SB541/2SD388
350/js,
C14A
2SD388 A
2sd388/2sb541
251C
audio amplifier 50w 50v
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2SD1530
Abstract: 753p
Text: Power Transistors 2SD1530 2SD1530 Silicon NPN Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r Switchin g i-» • F e a tu re s 10.2m ax. • High speed switching _ r— U n it I mm 4.4m ax. 5.7m ax. • High collector-base voltage 2 9max V Cbo
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2SD1530
29max
Ib-20
2SD1530
753p
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Untitled
Abstract: No abstract text available
Text: I 1 N AUER PHILIPS/DISCRETE bTE D bb53^31 0027741 141 APX B fX 3 U SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope intended for switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter Collector-emitter voltage (open base)
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BFX30
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PHILIPS BDX65
Abstract: BDX65 PHILIPS BDX64
Text: N AMER PHILIPS/DISCRETE b b S a ^ l 0011=177 1 • BDX65; 65A BDX65B; 65C ESE D T - 3 3 - 2 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,
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BDX65;
BDX65B;
BDX64,
BDX64A,
BDX64B
BDX64C.
BDX65
bb53T31
PHILIPS BDX65
BDX65
PHILIPS BDX64
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Untitled
Abstract: No abstract text available
Text: CDU BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors M ark in g P A C K A G E O U T L IN E D E T A IL S BCX71G = BG A L L D IM E N S IO N S IN m m BCX71H = BH BCX71J = BJ BCX71K = BK _3.0 2.8 0.14 0.48 03 8 3 Pin configuration
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BCX71G
BCX71H
BCX71J
BCX71K
BCX71G
BCX71J
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pnp transistor 1000v
Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A
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BUV48
BUV47
CB-244
CB-285
pnp transistor 1000v
transistor buv 90
bux diode
darlington NPN 1000V transistor
pnp transistor 600V
transistor ESM 30
buv PNP
transistor BU 104
NPN Transistor VCEO 1000V
transistor BUX 48
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