CR123A
Abstract: CR14250SE panasonic 614 battery CR17335SE panasonic CR123A "eveready E9" CR14250 ey 2562 PC1604 Eveready E9
Text: R TI F I ED STEEL BATTERY HOLDERS 2 T Y CE 900 ISO Q I UAL RUGGED STEEL BATTERY HOLDERS INSULATOR TUBES SUPPLIED FOR 2-3-4 CELLS END TO END An established design that has gained wide acceptance for commercial and military applications. Batteries are held under constant spring tension
|
Original
|
PDF
|
|
CR1220 holder smt
Abstract: panasonic cl2020 coin cell pc battery holders CR2032 toshiba sony CR2032 CR2450 toshiba CR2032 holder panasonic UL 2330 cr 3020 holder CR2032 button cell holder
Text: R TI F I ED COIN CELL PC BATTERY HOLDERS 2 T Y CE 900 ISO Q I UAL 12mm to 16mm & 1/3 “N” Sizes 20mm to 30mm Sizes SINGLE CELL HOLDER 3-VOLT DUAL CELL HOLDER (6-VOLT) Single and Dual “Printed Circuit” Cell Holders for Lithium Coin Cells. Designed for easy battery replacement. Will accommodate diameters
|
Original
|
PDF
|
|
tr 512
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-1E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • GENERAL DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
|
Original
|
PDF
|
DS05-20878-1E
MBM30LV0064
MBM30LV0064
D-63303
F9910
tr 512
|
FPT-44P-M08
Abstract: MBM30LV0064
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-3E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
|
Original
|
PDF
|
DS05-20878-3E
MBM30LV0064
MBM30LV0064
FPT-44P-M08
|
527h
Abstract: FPT-44P-M08 MBM30LV0064
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-4E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
|
Original
|
PDF
|
DS05-20878-4E
MBM30LV0064
MBM30LV0064
527h
FPT-44P-M08
|
FPT-44P-M08
Abstract: MBM30LV0064 BGA-52P-M01
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to
|
Original
|
PDF
|
DS05-20878-5E
MBM30LV0064
MBM30LV0064
FPT-44P-M08
BGA-52P-M01
|
FPT-44P-M08
Abstract: MBM30LV0064
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-1E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • GENERAL DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages
|
Original
|
PDF
|
DS05-20878-1E
MBM30LV0064
MBM30LV0064
FPT-44P-M08
|
diode MARKING CODE A9
Abstract: FPT-32P-M24 MBM29F004BC MBM29F004TC SA10
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-2E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (I) and 32-pin QFJ (PLCC) packages. This device is designed to
|
Original
|
PDF
|
DS05-20876-2E
MBM29F004TC/004BC-70/-90
MBM29F004TC/BC
32-pin
MBM29F004TC/BC
F0105
diode MARKING CODE A9
FPT-32P-M24
MBM29F004BC
MBM29F004TC
SA10
|
diode MARKING CODE A9
Abstract: MBM29F004BC MBM29F004TC SA10 FPT-32P-M24 SA1016K
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-3E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed
|
Original
|
PDF
|
DS05-20876-3E
MBM29F004TC/004BC-70/-90
MBM29F004TC/BC
32-pin
F0303
diode MARKING CODE A9
MBM29F004BC
MBM29F004TC
SA10
FPT-32P-M24
SA1016K
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-2E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (I) and 32-pin QFJ (PLCC) packages. This device is designed to
|
Original
|
PDF
|
DS05-20876-2E
MBM29F004TC/004BC-70/-90
MBM29F004TC/BC
32-pin
F0105
|
FPT-48P-M19
Abstract: FPT-48P-M20 SA10
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-1E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD-75/-90/MBM29PL160BD-75/-90 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
|
Original
|
PDF
|
DS05-20872-1E
MBM29PL160TD-75/-90/MBM29PL160BD-75/-90
48-pin
44-pin
F9907
FPT-48P-M19
FPT-48P-M20
SA10
|
SA11
Abstract: SA12 SA13 SA14 MBM29LV080A SA10
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-4E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/-90/-12 • FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements
|
Original
|
PDF
|
DS05-20870-4E
MBM29LV080A-70/-90/-12
40-pin
MBM29LV080A
SA11
SA12
SA13
SA14
MBM29LV080A
SA10
|
MBM29LV080A
Abstract: SA10 SA11 SA12 SA13 SA14 SA15
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-5E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/90/12 • DESCRIPTION The MBM29LV080A is a 16 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 32 sectors of 64 K bytes of flexible erase capability. The 8 bits of data will appear on
|
Original
|
PDF
|
DS05-20870-5E
MBM29LV080A-70/90/12
MBM29LV080A
40-pin
F0107
SA10
SA11
SA12
SA13
SA14
SA15
|
FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-3E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD/BD-75/90 • DESCRIPTION The MBM29PL160TD/BD is a 16 M-bit, 3.0 V-only Flash memory organized as 2 M bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (1), and 44-pin SOP packages. The
|
Original
|
PDF
|
DS05-20872-3E
MBM29PL160TD/BD-75/90
MBM29PL160TD/BD
48-pin
44-pin
MBM29PL160TD/160BD
F0306
FPT-48P-M19
FPT-48P-M20
|
|
|
800TD
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.
|
Original
|
PDF
|
DS05-20871-3E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
MBM29SL800TD/MBM29SL800BD
800TD
FPT-48P-M19
FPT-48P-M20
|
FPT-48P-M19
Abstract: FPT-48P-M20 SA10
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-1E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD-75/-90/MBM29PL160BD-75/-90 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements
|
Original
|
PDF
|
DS05-20872-1E
MBM29PL160TD-75/-90/MBM29PL160BD-75/-90
48-pin
44-pin
F9907
FPT-48P-M19
FPT-48P-M20
SA10
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
|
Original
|
PDF
|
DS05-20871-4E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-5E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/90/12 • DESCRIPTION The MBM29LV080A is a 16 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 32 sectors of 64 K bytes of flexible erase capability. The 8 bits of data will appear on
|
Original
|
PDF
|
DS05-20870-5E
MBM29LV080A-70/90/12
MBM29LV080A
40-pin
F0107
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-1E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD-75/-90/MBM29PL160BD-75/-90 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
|
Original
|
PDF
|
DS05-20872-1E
MBM29PL160TD-75/-90/MBM29PL160BD-75/-90
48-pin
44-pin
F9907
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
|
Original
|
PDF
|
DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
|
MBM29LV080A
Abstract: SA10 SA11 SA12 SA13
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-3E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/-90/-12 • FEATURES • Address specification is not necessary during command sequence • Single 3.0 V read, program and erase Minimizes system level power requirements
|
Original
|
PDF
|
DS05-20870-3E
MBM29LV080A-70/-90/-12
40-pin
F9904
MBM29LV080A
SA10
SA11
SA12
SA13
|
FPT-48P-M19
Abstract: FPT-48P-M20 SA10
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-1E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD-75/-90/MBM29PL160BD-75/-90 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
|
Original
|
PDF
|
DS05-20872-1E
MBM29PL160TD-75/-90/MBM29PL160BD-75/-90
48-pin
44-pin
F9907
FPT-48P-M19
FPT-48P-M20
SA10
|
AAH17
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20877-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 • FEATURES • Single 1.8 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
|
Original
|
PDF
|
DS05-20877-1E
MBM29SL160TD-10/-12/MBM29SL160BD-10/-12
48-pin
48-ball
AAH17
|
AA722
Abstract: FPT-44P-M08 MBM30LV0064
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-1E FLASH MEMORY M l l l 64M 8M X 8 BIT NAND-type MBM30LV0064
|
OCR Scan
|
PDF
|
MBM30LV0064
MBM30LV0064
44-pin
FPT-44P-M08)
F44017S-1C-2
AA722
FPT-44P-M08
|
