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    Text: CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP01N6G 600V 9.3Ω 1A 10V CEB01N6G 600V 9.3Ω 1A 10V CEF01N6G 600V 9.3Ω 1A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP01N6G/CEB01N6G CEF01N6G CEP01N6G CEB01N6G O-263 O-220 O-220F O-220/263 100ms