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    CEM9956A Datasheets (1)

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    CEM9956A Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF

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    CEM9956A

    Abstract: No abstract text available
    Text: CEM9956A March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 3.7A , RDS ON =80mΩ @VGS=10V. RDS(ON)=110m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9956A CEM9956A PDF

    CEM9956A

    Abstract: No abstract text available
    Text: March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 3 . 7 A , R ds o n =80 itiQ @ V g s =1 0 V . R d s (o n )=1 1 0m Q Di @ V g s = 4 .5 V . Di Ü2 Ü2 • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.


    OCR Scan     		CEM9956A 110itiQ CEM9956A PDF