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    CEP04N6 Search Results

    CEP04N6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEP04N6 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

    CEP04N6 Datasheets Context Search

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    CEF04N6

    Abstract: CEP04N6 CEF04N6 equivalent CEB04N6 CEI04N6 SWITCHING DIODE 600V 2A
    Text: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP04N6/CEB04N6 CEI04N6/CEF04N6 CEP04N6 CEB04N6 CEI04N6 CEF04N6 O-220 O-263 O-262 O-220F CEF04N6 CEP04N6 CEF04N6 equivalent CEB04N6 CEI04N6 SWITCHING DIODE 600V 2A

    CEP04N6

    Abstract: 600V,4A DIODE
    Text: CEP04N6/CEB04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 4A , RDS ON =2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		PDF CEP04N6/CEB04N6 O-220 O-263 CEP04N6 600V,4A DIODE

    CEF04N6

    Abstract: CEF04N6 equivalent CEP04N6 cef04n6 TRANSISTOR equivalent CEB04N6 CEI04N6
    Text: CEP04N6/CEB04N6 CEI04N6/CEF04N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP04N6 600V 2.5Ω 4A 10V CEB04N6 600V 2.5Ω 4A 10V CEI04N6 600V 2.5Ω 4A CEF04N6 600V 2.5Ω 4A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP04N6/CEB04N6 CEI04N6/CEF04N6 CEP04N6 CEB04N6 CEI04N6 CEF04N6 O-220 O-263 O-262 O-220F CEF04N6 CEF04N6 equivalent CEP04N6 cef04n6 TRANSISTOR equivalent CEB04N6 CEI04N6

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    2u 62 diode

    Abstract: CEP04N6 TI-131 1j05
    Text: CEP04N6/CEB04N6 P R E L IM IN A R Y N-Charme! Logic Level Enhancement Mode Field Effect Transistor B FEATURES * tÜÜV , 4A Jitiij' = 2 .5 11 ?Ycs=]0V. •Super hjph dense celi design fo r extrerely J o ï Kisjm, * Hi°|i p ie r and current h a ilin g capitiL1 Lty.


    OCR Scan     		PDF CEP04N6/CEB04N6 2u 62 diode CEP04N6 TI-131 1j05