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    Samtec Inc PRF18-P-C-EP-085-SS

    RF Connectors / Coaxial Connectors Precision 1.85 mm Cable Connector
    Free Sample
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    Mouser Electronics PRF18-P-C-EP-085-SS
    • 1 $59.4
    • 10 $51.74
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    Samtec Inc PRF24-J-C-EP-086-SS

    RF Connectors / Coaxial Connectors Precision 2.40 mm Cable Connector
    Free Sample
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    Mouser Electronics PRF24-J-C-EP-086-SS
    • 1 $56.03
    • 10 $49.36
    • 100 $30.78
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    Samtec Inc PRF18-J-C-EP-086-SS

    RF Connectors / Coaxial Connectors Precision 1.85 mm Cable Connector
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PRF18-J-C-EP-086-SS
    • 1 $58.34
    • 10 $51.68
    • 100 $33.1
    • 1000 $30.19
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    Samtec Inc PRF18-P-C-EP-086-SS

    RF Connectors / Coaxial Connectors Precision 1.85 mm Cable Connector
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PRF18-P-C-EP-086-SS
    • 1 $58.34
    • 10 $51.68
    • 100 $33.1
    • 1000 $30.19
    • 10000 $30.19
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    Amphenol Corporation EP-8-11P

    Loudspeaker Connectors FEMALE CABLE METAL 8 SKT
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    TTI EP-8-11P Box 100 1
    • 1 $29.81
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    CEP8 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEP8030L Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP8030LA Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEP803AL Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP8060 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP8060L Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    CEP8060L Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP8060LR Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEP8060R Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEP80N75 Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF
    CEP810 Sumida ADSL Transformer< SMD Type: CEP Series> Original PDF
    CEP81A3 Chino-Excel Technology N-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package Original PDF
    CEP83A3 Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF
    CEP840N Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF

    CEP8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 9.8 MAX [.386] 5 TYPE PART NO. CEP810 10.5 MAX [.413] 8 C10199 rev. P1 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402] 1 8 3 5 2 7 4 6 Line 1.2 [.047]


    Original     		PDF CEP810 C10199 C10199

    Untitled

    Abstract: No abstract text available
    Text: RoHS Compliant TYPE PART NO. CEP810 Cd: Max 0.01 wt% Others: Max. 0.1 wt% 9.8 MAX [.386] 5 10.5 MAX [.413] 8 C10141 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402]


    Original     		PDF CEP810 C10141 500/reel

    Untitled

    Abstract: No abstract text available
    Text: RoHS Compliant TYPE PART NO. CEP810 Cd: Max 0.01 wt% Others: Max. 0.1 wt% 9.8 MAX [.386] 5 10.5 MAX [.413] 8 C10197 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402]


    Original     		PDF CEP810 C10197 500/reel

    Untitled

    Abstract: No abstract text available
    Text: RoHS Compliant TYPE PART NO. CEP810 Cd: Max 0.01 wt% Others: Max. 0.1 wt% 9.8 MAX [.386] 5 10.5 MAX [.413] 8 C10203 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402]


    Original     		PDF CEP810 C10203 500/reel

    cep830g

    Abstract: No abstract text available
    Text: CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP830G 500V 1.5Ω 5A 10V CEB830G 500V 1.5Ω 5A 10V CEF830G 500V 1.5Ω 5A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP830G/CEB830G CEF830G CEP830G CEB830G O-263 O-220 O-220F O-220/263 cep830g

    Untitled

    Abstract: No abstract text available
    Text: CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840L 500V 0.8Ω 8A 10V CEB840L 500V 0.8Ω 8A 10V CEF840L 500V 0.8Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP840L/CEB840L CEF840L CEP840L CEB840L O-263 O-220 O-220F O-220/263

    CEP83A3

    Abstract: CEP83A3G CEB83A3G CEB83A3
    Text: CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS ON = 4.5 mΩ @VGS = 10V. RDS(ON) = 7.0 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEP83A3G/CEB83A3G O-220 O-263 CEP83A3 CEP83A3G CEB83A3G CEB83A3

    CEP80N75

    Abstract: n-channel, 75v, 80a CEB80N75 CEF80N75 transistor vds rds 12 id 80a to220
    Text: CEP80N75/CEB80N75 CEF80N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP80N75 75V 13mΩ 80A 10V CEB80N75 75V 13mΩ 80A CEF80N75 75V 13mΩ 80A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP80N75/CEB80N75 CEF80N75 CEP80N75 CEB80N75 O-220 O-263 O-220F O-263 CEP80N75 n-channel, 75v, 80a CEB80N75 CEF80N75 transistor vds rds 12 id 80a to220

    cep840g

    Abstract: No abstract text available
    Text: CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840G 500V 0.85Ω 8A 10V CEB840G 500V 0.85Ω 8A 10V CEF840G 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP840G/CEB840G CEF840G CEP840G CEB840G O-263 O-220 O-220F O-220/263 cep840g

    Untitled

    Abstract: No abstract text available
    Text: C3174L Product Description REV B 470µH, 1.26:1 TR CEP8 Line Interface Transformer Meets requirements of IEC60950 for supplementary insulation, 250V working voltage A Customer Terminal #1 Indicator Coplanar with surface A +0.006"/-0.000" COEV C3174L XXXXX


    Original     		PDF C3174L IEC60950 C3174L 10KHz, 100mVAC. 30kHz 100kHz, 100mVAC,

    DD 127 D TRANSISTOR

    Abstract: No abstract text available
    Text: CEP8060L/CEB8060L N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 60V , 80A , RDS ON =9.0mΩ @VGS=10V. RDS(ON)=12.0mΩ @VGS= 5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		PDF CEP8060L/CEB8060L O-220 O-263 DD 127 D TRANSISTOR

    smd PULSE TRANSFORMER

    Abstract: Pulse Transformer VAC sumida ift coil M-8G MC-102 transformer ADSL splitter CEP1311 RM6 transformer MIT-4115V EEH1313 MIT4115V
    Text: For xDSL LINE TRANSFORMER & SPLITTER COILS For xDSL LINE TRANSFORMER & SPLITTER COILS RM4 EEH1313 RM6 EEH1617 CEP79 CEP1311 CEP811 EP1311 TEL For xDSL LINE TRANSFORMER & SPLITTER COILS PC CEP1311C CPFC85 Line Transformer • OUTLINE／概要 It is a xDSL line transformer which corresponds to the smaller foot


    Original     		PDF EEH1313 EEH1617 CEP79 CEP1311 CEP811 EP1311 CEP1311C CPFC85 100mH smd PULSE TRANSFORMER Pulse Transformer VAC sumida ift coil M-8G MC-102 transformer ADSL splitter CEP1311 RM6 transformer MIT-4115V EEH1313 MIT4115V

    Untitled

    Abstract: No abstract text available
    Text: ADSLTransformer< SMDType: CEPSeries> Type: CEP810 Please refer to the sales offices on our website for a representative near you www.sumida.com 1/2


    Original     		PDF

    CEP80N75

    Abstract: transistor vds rds 12 id 80a to220 ceb80n75 CEF80N75 CEI80N75
    Text: CEP80N75/CEB80N75 CEI80N75/CEF80N75 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP80N75 75V 13mΩ 80A 10V CEB80N75 75V 13mΩ 80A 10V CEI80N75 75V 13mΩ 80A 10V CEF80N75 75V 13mΩ 80A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP80N75/CEB80N75 CEI80N75/CEF80N75 CEP80N75 CEB80N75 CEI80N75 CEF80N75 O-220 O-263 O-262 O-220F CEP80N75 transistor vds rds 12 id 80a to220 ceb80n75 CEF80N75 CEI80N75

    CEP85A3

    Abstract: No abstract text available
    Text: CEP85A3/CEB85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 90A, RDS ON = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP85A3/CEB85A3 O-263 O-220 O-263 O-220 CEP85A3

    CEP85N75

    Abstract: No abstract text available
    Text: CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP85N75 75V 12mΩ 86A 10V CEB85N75 75V 12mΩ 86A CEF85N75 75V 12mΩ 86A 10V e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP85N75/CEB85N75 CEF85N75 CEP85N75 CEB85N75 O-220 O-263 O-220F CEP85N75

    Untitled

    Abstract: No abstract text available
    Text: CEP8030LA/CEB8030LA N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS ON = 6.5mΩ @VGS = 10V. RDS(ON) = 9.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP8030LA/CEB8030LA O-220 O-263

    Untitled

    Abstract: No abstract text available
    Text: RoHS Compliant TYPE Cd: Max 0.01 wt% Others: Max. 0.1 wt% 9.8 MAX [.386] 5 PART NO. CEP810 10.5 MAX [.413] 8 C10107 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402]


    Original     		PDF CEP810 C10107 500/reel

    Untitled

    Abstract: No abstract text available
    Text: CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS ON = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP84A4/CEB84A4 O-220 O-263

    c10107

    Abstract: c14119 smd code 50K C10138 C10176 c10168 C10141 CEP810 vdsl transformer c14120
    Text: ADSL Transformer< SMD Type: CEP Series> Type: CEP810 ◆ Product Description ・9.8x9.0mm Max. L×W ,10.5mm Max. Height. ◆ Feature ・xDSL line transformer. ・Ideally used in ADSL/VDSL Central Office. ・Approved by Broadcom,Conexant and Infineon. ・RoHS Compliance.


    Original     		PDF CEP810 C10197 C10199 C10203 C10204 C14103 C14106 C14109 C14119 C14120 c10107 c14119 smd code 50K C10138 C10176 c10168 C10141 CEP810 vdsl transformer c14120

    CEP83A3

    Abstract: CEP83A3 equivalent CEP8
    Text: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 100A, RDS ON = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEP83A3/CEB83A3 O-220 O-263 CEP83A3 CEP83A3 equivalent CEP8

    TF210

    Abstract: No abstract text available
    Text: CEP8060LR/CEB8060LR PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 8 0 A , R ds o n =9.0 itiQ RDS(ON)=12.0m£i @ V gs =1 0 V . @ V gs= 5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.


    OCR Scan     		PDF CEP8060LR/CEB8060LR O-220 O-263 TF210

    B803A

    Abstract: b-803a
    Text: CEP803ALVCEB803AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 5 2 A , R ds o n =1 5m Q @ V g s =1 0V. RDS(ON)=25mfl @ V gs = 4 .5 V . • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.


    OCR Scan     		PDF CEP803AL/CEB803AL O-220 O-263 to-263 to-220 B803A b-803a

    P8060

    Abstract: No abstract text available
    Text: 1 .II 1 1 1 ,;i;, 1 1 mu CEP8060R/CEB8060R PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 8 0 .0 A , Rds on =1 O.OmQ D @V g s= 1 OV. • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability.


    OCR Scan     		PDF CEP8060R/CEB8060R O-22Q O-263 to-263 to-220 P8060