Q62702-X160
Abstract: No abstract text available
Text: Silicon PIN Diode ● BXY 42BA-7 Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BXY 42BA-7 27 Q62702-X160 Pin Configuration Package1 Cerec-X Maximum Ratings Parameter Symbol Values Unit
|
Original
|
42BA-7
Q62702-X160
Q62702-X160
|
PDF
|
BFQ71
Abstract: Q62702-F775 bfq 96
Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.
|
Original
|
Q62702-F775
BFQ71
Q62702-F775
bfq 96
|
PDF
|
2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
|
Original
|
F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
|
PDF
|
k 1191
Abstract: Z0 607 MA GP 652 Q62702-F1189
Text: NPN Silicon RF Transistor BFQ 82 ● For low-noise, high-gain amplifiers up to 2 GHz. ● Linear broadband applications at collector currents up to 40 mA. ● Hermetically sealed ceramic package. ● fT = 8 GHz F = 1.1 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
Original
|
Q62702-F1189
k 1191
Z0 607 MA GP 652
Q62702-F1189
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BXY 42BA-7 Silicon PIN Diode • Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B XY 42BA-7 27 Q62702-X160 Pin Configuration * ° H<3-EHA07007 Package1 Cerec-X Maximum Ratings
|
OCR Scan
|
42BA-7
Q62702-X160
3--------EHA07007
0Qbb740
|
PDF
|
cfy siemens
Abstract: cfy 19 siemens CFY 19 cfy 14 siemens MARKING SOT-143 C5 CFY 18 CFY 10 6MA80 CFY10
Text: SI EM ENS A K T I E N G E S E L L S C H A F 47E D fl235büS OOSbSflü □ « S I E G GaAsFETs Metal Ceramic Package Type B B S El □ S S Max. ratings Package M arking Fig. 14 14 100 mil 100 mil C10 C11 23 23 — - 11.5 11.5 - - Cerec-XF Cerec-XF Cerec-XF
|
OCR Scan
|
fl235b
OT-143
cfy siemens
cfy 19 siemens
CFY 19
cfy 14 siemens
MARKING SOT-143 C5
CFY 18
CFY 10
6MA80
CFY10
|
PDF
|
15025
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAT 15-. 5 R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 R 52 Q62702-A804
|
OCR Scan
|
Q62702-A804
Q62702-A809
Q62702-A812
Q62702-A806
EHA07009
15025
|
PDF
|
CFY19-22
Abstract: CFY19 Dual-Gate* bf981 bf987
Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '
|
OCR Scan
|
BF930
BF994S
BF996S
BF998
BF1012
CF739
CF750
OT-143
CFY19-18
CFY19-22
CFY19
Dual-Gate* bf981
bf987
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40
|
OCR Scan
|
023SbOS
CGY50
OT-143
CGY40
CLY10
CGY52
|
PDF
|
BFQ58
Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S
|
OCR Scan
|
6535b05
00M5Mgfl
BF199
O-92d
BF599
BF240
BF840
BF241
BFQ58
BFQ57
BFT99
RF Bipolar Transistors
BFT97
BFP194
BF840
BFT65
BFR34A
BF450
|
PDF
|
Untitled
Abstract: No abstract text available
Text: in te g r a te d c ir c u its PBD 3517 Data Sheet Stepper Motor Drive Circuit • r - i ' a x c c a ' c eve> way. .5 a Dilevel funcacc.-.e' ~ 2 ;orce resistor. ' a -: 2 - e-te'-a components r'r : : : 2_: : ' . e _ ' t ' o r _S-TTL or mi: — ; e; reccesystem for curM ~ - _e :• .e- s tec for applications
|
OCR Scan
|
S-163
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS Silicon Schottky Diodes BAT 14-. 5 D • Beam lead technology • Low dimension • High performance • Medium barrier VCE05181 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-025 D
|
OCR Scan
|
VCE05181
Q62702-A790
Q62702-A793
Q62702-A797
Q62702-A800
EHA07010
S235b05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF bOE D • ÖE3Sb05 O O S m V b 3G7 HISIE6 SIEMENS ^ 3 / - 0/ Transistoren Transistors HF-Transistoren Maximum Ratings ^CEO h Plot V mA mW Chariicteristics rA =25°C F Gp h le ^CE f GHz dB mA V MHz dB Package h mA LU Type N=NPN P=PNP
|
OCR Scan
|
E3Sb05
BF517
BF550
BF554
BF569
OT-143
BFQ82
BFQ196
|
PDF
|
diode S6 78A
Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14
|
OCR Scan
|
O-92tl
O-92d
diode S6 78A
TRANSISTOR PNP BA RT SOT 89
mmic CEA SOT363
32N45
transistor 6bw
TRANSISTOR BC 545
BF1012S
6bw sot-23
up 6103 s8
6bw 12 transistor
|
PDF
|
|
|
5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
|
OCR Scan
|
BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
|
PDF
|
c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
|
OCR Scan
|
3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
|
PDF
|
A235L
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAT 15-. 5 D • Beam lead technology • Low dimension • High performance • Low barrier VCE05181 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 D 52 D
|
OCR Scan
|
VCE05181
Q62702-A803
Q62702-A798
Q62702-A807
Q62702-A811
EHA07010
Sto115
DDbbb35
A235L
|
PDF
|
cfy 19 siemens
Abstract: No abstract text available
Text: SIEMENS CFY 19 GaAs FET • • • • • Low noise High gain Ion-implanted planar structure All gold metallization For front ends • For oscillators • For antenna amplifiers from UHF up to 12 GHz • Hi rel/MIL tested upon request ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
Q62703-F14
Q62703-F3
G0b7502
00h7S03
cfy 19 siemens
|
PDF
|
jc 817
Abstract: pcb817 transistor jc 817 transistor cms 225 BFQ182 BFQ 225 182 marking transistor transistor 182 BFQ 270 pcb 817
Text: SIEMENS BFQ 182 NPN Silicon RF Transistor Preliminary Data • For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • / r = 8 GHz F = 1.25 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
BFQ182
Q62702-F1355
023SbOS
S235bD5
A23SbDS
GGb7231
eht07760
jc 817
pcb817
transistor jc 817
transistor cms 225
BFQ 225
182 marking transistor
transistor 182
BFQ 270
pcb 817
|
PDF
|
BFP29
Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700
|
OCR Scan
|
fi23SbQS
001Sb74
O-117
BFT98B
BFT99A
BFR15A,
BFS55A,
BFP29
BFP35A
BFQ77
BFP17
BFQ57
BFQ58
BFT65
BFQ 58
SOT-89 smd marking CF
|
PDF
|
MGF1502
Abstract: CFY18 CFY13 CFY19 siemens gaas fet cfy11 CFY18-23 CFY16 CFY11 CFY14 CF930
Text: FUNKAMATEUR-Bauelementeinformation Mikrowelienbauelemente Analoge IS und N-Kanal-Feldeffekttransistoren auf Gallium-Arsenid-Basis Konvent, rechnoiog/e STATE-OF-THE-MT-T. Leuchtanzeigen, Faseropt. Komm., Bildverstärker u.a. Mikrowellentechn. Kfz-Elektronik
|
OCR Scan
|
CFY19
CFY18-15
CFY18-20
CFY18-23
CFY18-25
CFY18-27
CFY19
CFY20
O-120
CFY16
MGF1502
CFY18
CFY13
siemens gaas fet cfy11
CFY11
CFY14
CF930
|
PDF
|
CFY19
Abstract: bf963 CFY19-18 CFY10 CFY76-08 gaasfets bf544 CFY67-08 CFY19-22 BF964S
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors Type M axim um Ratings A>s Pt G DS 20 20 20 20 20 12 30 50 30 30 30 30 200 200 200 200 200 200 23 25 25 25 18 20 20 20 30 30 200
|
OCR Scan
|
BF961
BF963
BF964S
BF965
BF966S
BF988
BF544
BF987
T092D
O-92b
CFY19
CFY19-18
CFY10
CFY76-08
gaasfets
bf544
CFY67-08
CFY19-22
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM EN S Silicon Schottky Diodes • • • • BAT 15-. 5 S Beam lead technology Low dimension High performance Low barrier VC E05193 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 S
|
OCR Scan
|
E05193
Q62702-A802
Q62702-A805
Q62702-A808
Q62702-A810
0235b05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS BAT 32 Silicon Schottky Diode • • • • • • RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mii-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
Q62702-A826
fl235bG5
6B35bOS
|
PDF
|
