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    CF RH TRANSISTOR Search Results

    CF RH TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    CF RH TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 20KD-HB Ic Collector current. 20A Vcex Collector-emitter voltage.600V hFE DC current gain. 250 Insulated Type


    OCR Scan     		QM20KD-HB 20KD-HB E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15KD-HB Ic Collector current. 15A Vcex Collector-emitter voltage 600V hFE DC current gain.250 Insulated Type UL Recognized


    OCR Scan     		QM15KD-HB E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-H lc Collector current. 75A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM75E2Y/E3Y-H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50E2Y/E3Y-H Ic Collector current. 50A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM50E2Y/E3Y-H E80276 E80271 PDF

    cf rh transistor

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-H Ic Collector current. 30A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM30E2Y/E3Y-H E80276 E80271 cf rh transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE INSULATED TYPE QM75E2Y/E3Y-2H lc Collector current. 75A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM75E2Y/E3Y-2H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30E 2Y /E3Y-2H Ic Collector current. 30A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM30E2Y/E3Y-2H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB lc Collector current. 800A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		QM800HA-2HB E80276 E80271 PDF

    TDE0160

    Abstract: TDE0160DP TDE01
    Text: TDE0160 PROXIMITY DETECTOR . . . SUPPLY VOLTAGE : +4 TO +36V SUPPLY CURRENT : < 1.2mA OUTPUT TRANSISTORS : I = 20mA ; VCE sat ≤ 1100mV OSCILLATOR FREQUENCY : < 1MHz LOSS RESISTANCE : 5 TO 50kΩ. DIP14 DESCRIPTION The TDE0160 is designed to detect metal bodies


    Original     		TDE0160 1100mV DIP14 TDE0160 TDE0160DP DIP14) 0160FP TDE0160DP TDE01 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30HQ-24 DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM30HQ-24 Ic Collector current. 30A Vcex Collector-emitter voltage 1200V hFE DC current gain. 5 Insulated Type


    OCR Scan     		QM30HQ-24 E80276 E80271 PDF

    COFELEC 432FP

    Abstract: 432FP cf rh transistor coil eddy current cofelec
    Text: TDE0160 PROXIMITY DETECTOR . . . SUPPLY VOLTAGE : +4 TO +36V SUPPLY CURRENT : < 1.2mA OUTPUT TRANSISTORS : I = 20mA ; VCE sat ≤ 1100mV OSCILLATOR FREQUENCY : < 1MHz LOSS RESISTANCE : 5 TO 50kΩ. DIP14 DESCRIPTION The TDE0160 is designed to detect metal bodies


    Original     		TDE0160 1100mV DIP14 TDE0160 TDE0160DP DIP14) 0160FP COFELEC 432FP 432FP cf rh transistor coil eddy current cofelec PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm OC BO - m -M - - < EO ó ÓE BX M4 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES


    OCR Scan     		QM600HD-M PDF

    COIL metal detector schematic

    Abstract: cf rh transistor eddy current hysteresis loss cofelec TDE0160 TDE0160DP metal detector coil DIAGRAM SGS-Thomson COFELEC 432FP coil eddy current
    Text: TDE0160 PROXIMITY DETECTOR . . . SUPPLY VOLTAGE : +4 TO +36V SUPPLY CURRENT : < 1.2mA OUTPUT TRANSISTORS : I = 20mA ; VCE sat ≤ 1100mV OSCILLATOR FREQUENCY : < 1MHz LOSS RESISTANCE : 5 TO 50kΩ. DIP14 DESCRIPTION The TDE0160 is designed to detect metal bodies


    Original     		TDE0160 1100mV DIP14 TDE0160 TDE0160DP DIP14) 0160FP COIL metal detector schematic cf rh transistor eddy current hysteresis loss cofelec TDE0160DP metal detector coil DIAGRAM SGS-Thomson COFELEC 432FP coil eddy current PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H lc Collector current. 75A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM75DY-H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE Q M 100TX1-H APPLICATION Inverters, Servo drives, DC motor controllers, CVCF, NC equipment, Welders OUTLINE DRAW ING & C IRCUIT DIAG RAM D im ensions in mm Feb. 1999 ♦ MITSUBISHI


    OCR Scan     		QM100TX1-H 100TX1-H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K lc Collector current. 100A Vcex Collector-emitter voltage 1200V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM100DY-24K E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM15DX-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 15D X -2H Ic Collector current. 15A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM15DX-2H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM300DY-24 E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-24B Ic Collector current. 50A Vcex Collector-emitter voltage 1200V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		QM50DY-24B E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30CY-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM30CY-H 30CY-H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAW ING & C IRCUIT DIAG RAM D im ensions in mm B u P _ . _BwP _ BvP_ . EuPO—


    OCR Scan     		QM50TB-24B PDF

    Untitled

    Abstract: No abstract text available
    Text: TM6841 4 Bit Microcontroller GENERAL DESCRIPTION The TM6841 is an embedded high-performance 4-bit microcomputer with LCD driver. It contains all the necessary functions, such as 4-bit parallel processing ALU, ROM, RAM, I/O ports, timer, clock generator, dual clock, RFC, EL light, LCD driver, look-up table, and


    Original     		TM6841 TM6841 PDF

    transistor eb 2030

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB lc Collector current. 200A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		QM200DY-HB E80276 E80271 transistor eb 2030 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM 100DY-24BK Collector current. 100A Vcex Collector-emitter voltage 1200V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		QM100DY-24BK 100DY-24BK E80276 E80271 PDF