CGHV22200F Search Results

CGHV22200F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGHV22200F		Cree	RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162		Original	PDF

CGHV22200F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2	Original	PDF	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P
Untitled Abstract: No abstract text available Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	PDF	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P
Untitled Abstract: No abstract text available Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2	Original	PDF	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P
CGHV22200 Abstract: No abstract text available Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	PDF	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions
idq10 Abstract: No abstract text available Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is	Original	PDF	CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions idq10