irf9142
Abstract: irf9140
Text: HE D I MflSSMSS QOQTSHQ 0 | Data Sheet No. PD-9.419B INTERNATIONAL R E C T IF IE R I O R INTERNATIONAL RECTIFIER H E X F E T T R A N S P -C H A N N E L 1 0 0 P O W E R S I R F 9 1 4 M I R F B 1 4 1 I R F 9 1 4 2 I R F S 1 4 3 I S V O L T M O S F E T s T
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IRF914Q
IRFS141
IRF914S
IRF9143
G-202
irf9142
irf9140
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C1685 transistor
Abstract: C1685 C1681 transistor c1684 TRANSISTOR C1685 NPN C1685 C1682 transistor c168 C1680 TMT Isolator
Text: f e ll PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MCT2200 MCT2201 MCT2202 DESCRIPTION PACKAGE DIMENSIONS Î The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide infrared em itting diode is selectively coupled with an NPN
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MCT2200
MCT2201
MCT2202
MCT2200,
MCT2202
E90700
ST1603A
c2079
C1683
C1685 transistor
C1685
C1681
transistor c1684
TRANSISTOR C1685
NPN C1685
C1682 transistor
c168
C1680
TMT Isolator
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EAF41
Abstract: cg1f
Text: EAF41 PHILIPS D I O D E-PENTODE with variable mutual conductance for use as R.F., I.F. and A.F. amplifier D I O D E-PENTHODE à pente variable pour l'utilisation en amplificatrice H . F., 1.1.F . et B.F. DIOD E-PENTODE mit veränderlicher Steilheit zur V e r
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EAF41
EAF41
cg1f
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IRF7203
Abstract: No abstract text available
Text: International ¡K?RRectifier PD 9.1102A IRF7203 PR ELIM IN A R Y HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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IRF7203
1RF7203
002b53G
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PDF
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LD12A VOLTAGE REGULATOR
Abstract: Ggg 12A IRF7504 smd code marking js diode smd marking 328
Text: International S Rectifier PD 9.1267C IRF7504 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low O n-R esistance Dual P-C hannel M O S F E T Very Sm all S O IC Package Low Profile < 1 .1 mm Available in T a p e & Reel
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1267C
IRF7504
IRF7504
LD12A VOLTAGE REGULATOR
Ggg 12A
smd code marking js
diode smd marking 328
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PDF
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SG1401T
Abstract: SG1401/SG2401ISG3401
Text: SG1401/SG2401ISG3401 5ILICDN GENERAL LINEAR IN TEG R ATED C IRCUITS HIGH FREQUENCY VIDEO AMPLIFIER DESCRIPTION FEATURES A monolithic integrated voltage amplifier useful over a frequency range from DC to 200 MHz. Internal emitter followers are used to achieve high input and low
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SG1401/SG2401ISG3401
SG1401
SG2401
SG3401
application70Â
SG1401T
SG1401/SG2401ISG3401
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PDF
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IRF530
Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
Text: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V
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IRF530,
IRF531,
IRF532,
IRF533
0V-100V
IRF532
50V0SS
IRF530
L10M
IRF531
J56-1
IRF530 mosfet
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PDF
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I-348
Abstract: i348 I 348
Text: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER I t t R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.
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IRFM360
switc27
IRFM360D
IRFM360U
O-254
MILS-19500
I-348
I-348
i348
I 348
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PDF
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476C
Abstract: IRF634 N102H
Text: PD-9.476C International S S Rectifier IRF634 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = 2 5 0 V ^DS on = 0 .4 5 Q lD = 8.1A Description T h ird G e n e ra tio n H E X F E T s fro m In te rn a tion a l R e ctifie r p ro vid e th e d e s ig n e r
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IRF634
0-45Q
O-220
476C
IRF634
N102H
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mosfet j142
Abstract: j143 J141 mosfet IRFJ142 J141 j142 IRFJ140 IRF 140 G527 IRFJ141
Text: HE D I MÛSS4S2 OOQTSSQ 0 | Data Sheet No. PD-9.402A INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-11 IRFJ140 HEXFET TRANSISTORS IRFJ141 N-CHANNEL POWER MOSFETs IRFJ14 2 IRFJ143 100 Volt, 0.085 Ohm HEXFET The HEXFET® technology is the key to International
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T-39-11
IRFJ140
IRFJ141
IRFJ142
IRFJ143
G-531
IRFJ140,
IRFJ141,
IRFJ142.
IRFJ143
mosfet j142
j143
J141 mosfet
J141
j142
IRF 140
G527
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PDF
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international rectifier NE 22
Abstract: f1010 n-channel mosfet irfz34e N17A f1010 IR
Text: PD - 9.1672A In terna tional TOR Rectifier IRFZ34E HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling Description V dss = 60 V
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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001SS7
25-35kg
2SK1171
900 v 9 amp mosfet
2SK1015
2SK726
2SK1511
2SK1222
j545
2SK1018
2SK9
2SK151
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PDF
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IRFF9131
Abstract: FF9130 RIP 9130
Text: HARRIS I R F F 9 1 3 , I R F F 9 1 I R F F 9 1 3 2 , I R F F 9 1 3 1 3 3 Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 0 5 A F • -5.5A and -6.5A , -8 0 V and -100V BOTTOM VIEW • rp 5|ON = 0 .3 0 ÎÎ and 0 .4 0 0
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-100V
IRFF9130,
IRFF9131,
IRFF9132
IRFF9133
93CS-4330S
92CS-43299
92CS-4330C
IRFF9131
FF9130
RIP 9130
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PDF
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j342
Abstract: IRFJ340 Gfg 75a J340 Diode Gfg 75a IRFJ341 IRFJ342 IRFJ343
Text: HE D I MÛ554SE! QOG'iSflb T | Data Sheet No. PD-9.406A I NT ERNATIONAL R E C T I F I E R T - i f - / / IO R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFJ340 D IRFJ341 ' IRFJ342 N-CHANNEL POWER MOSFETs G IRFJ343 Features: 400 Volt, 0.55 Ohm H EXFET The H E X F E T ® technology is the key to International
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S54S2
IRFJ341
G-567
IRFJ340,
IRFJ341,
IRFJ342,
IRFJ343
T-39-11
75BVpSS
G-568
j342
IRFJ340
Gfg 75a
J340
Diode Gfg 75a
IRFJ341
IRFJ342
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PDF
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k 3525 MOSFET
Abstract: IRFD210 diode D213 lp11e JIS S10C high voltage rectifier diode T35 D213 DIODE C136 Power MOSFET in a HEXDIP package IRFD213
Text: HE 0 I INTERNATI ONAL 4055452 Q0Qâ3âb 7 | RECTIFIER Data Sheet No. PD-9.386E T-35-25 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I O R IRFD21 O IRFD21 3 N-C HAIMINIEL HEXDIP" 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE 200 Volt, 1.5 Ohm, 1-Watt HEXDIP
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T-35-25
IRFD21
C-139
IRFD210,
IRFD213
T-35-
C-140
k 3525 MOSFET
IRFD210
diode D213
lp11e
JIS S10C
high voltage rectifier diode T35
D213
DIODE C136
Power MOSFET in a HEXDIP package
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PDF
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RFI840G
Abstract: R9245
Text: PD - 9.1527 International TOR Rectifier IRFI9520N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <S> • Sink to Lead Creepage Dist. = 4.8mm • P-Channel • Fully Avalanche Rated
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IRFI9520N
RFI840G
R9245
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PDF
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f630
Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
Text: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec
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IRF63Q
IRFG31
IRFB32
IRF633
TQ-220AB
C-245
IRF630,
IRF631,
IRF632,
IRF633
f630
IRF630 HEXFET TRANSISTORS
F633
IRF632
alps 103
DIODE C244
mosfet f630
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PDF
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F1G21
Abstract: IRF7317
Text: International IOR Rectifier P D -9.1568 IRF7317 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier
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IRF7317
makingA-S41
F1G21
IRF7317
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PDF
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g371
Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
Text: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International
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T-39-Ã
G-376
g371
IRFF330
IRFF331
IRFF332
IRFF333
510 MOSFET
EC07
CIRCUIT g371
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PDF
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74LS123A
Abstract: CY323 74123 74LS123 monostable multivibrator using 74123 S54123F 74122 74122 Retriggerable Monostable Multivibrator 74123 time delay S54123
Text: 5 4 /7 4 1 2 3 54LS/74LS123A Prelim inary DESCRIPTION PIN CONFIGURATIONS data FEATURES These r e tr ig g e r a b le m o n o s ta b le m u ltiv ib ra to rs fe a tu re d c trig g e rin g fro m g a t ed a c tiv e LO W in p u ts (A ) a nd a c tiv e HIGH in p u ts (B ) a nd a ls o p ro v id e o v e rrid in g d ire c t
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54LS/74LS123A
54H/74H,
54S/74S
54LS/74LS
54S/74S;
54LS/74LS
74LS123A
CY323
74123
74LS123
monostable multivibrator using 74123
S54123F
74122
74122 Retriggerable Monostable Multivibrator
74123 time delay
S54123
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PDF
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ferroxcube toroids
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F175G V M R F175G U The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 200/150 WATTS, 28 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push
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MRF175GV
MRF175GU
MRF175G
MRF176
MRF175GV
MRF175GU
ferroxcube toroids
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PDF
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UEL51
Abstract: VEB Funkwerk Erfurt rgn 1064 EL84 6SL7 Funkwerk Erfurt EF12k VEB M ik ro e le k tro n ik 6SH7 Erfurt
Text: EMPFÄNGERRÖHREN GESAM TAUSGABE ALLER R O H R E N W E R K E Mit der vorliegenden Gemeinschaftsarbeit aller Röhrenwerke der Deutschen Demokratischen Republik wird zum ersten Male eine Übersicht über sämtliche z. Z . erzeugten bzw. in Entwicklung be findlichen Röhren gegeben. Als Neuheit sind hierin
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9436a
Abstract: IRF P-Channel FET 100v K34 mosfet diode sy 171 fg 100al 34 14 IRFG6110 IRFG6113 SS452 628 he KJJ 15
Text: 11E 0 | MÔSS452 INTERNATIONAL aOOSbMb 1 | Data Sheet No. PD-9.436A RECTIFIER INTERNATIONAL RECTIFIER TOR IRFG6110 HEXFET TRANSISTORS COMBINATION N ANO P CHANNEL C2 EACH POWER MOSFETs IRFGS113 14 LEAD DUAL-IN-LINE PACKAGE SIDE BRAZE) Features: 100 Volt, 0.8 Ohm (N-Channel) and
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SS452
T-V3-25
IRFG611D
ofLH0063
G-632
9436a
IRF P-Channel FET 100v
K34 mosfet
diode sy 171
fg 100al 34 14
IRFG6110
IRFG6113
628 he
KJJ 15
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA MC33110 • I SEMICONDUCTOR TECHNICAL DATA Lo w V o lta g e C om p an der The MC33110 contains tw o variable gain circuits configured fo r com pressing and expanding the dynam ic range o f an audio sig nal. One circuit is configured as an expander, w h ile the other
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OCR Scan
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MC33110
MC33110
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