CRCW1206100RF
Abstract: NCP102 VJ0603Y101KXXA ESMG250ELL AND8037 TP015 vishay resistor HP6N136 NTD40N03R TP10
Text: AND8303/D Generating a 1.2 V Voltage Supply using the NCP102 Voltage Regulator Prepared by: Juan Carlos Pastrana ON Semiconductor http://onsemi.com INTRODUCTION The minimum output voltage is limited by the voltage reference. The pass transistor is selected to achieve the
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AND8303/D
NCP102
NCP102
CRCW1206100RF
VJ0603Y101KXXA
ESMG250ELL
AND8037
TP015
vishay resistor
HP6N136
NTD40N03R
TP10
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cgs resistor c7
Abstract: CGS C14 cgs resistor c14 Meggitt CGS 1 R/cgs resistor c7 CGS 1R0
Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistors TYPE C SERIES Meggitt CGS has manufactured the 'C' Series of Vitreous Enamelled Wirewound Resistors for more than
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Untitled
Abstract: No abstract text available
Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either
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ISL6113,
ISL6114
FN6457
ISL6114
5m-1994.
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IRZ 40
Abstract: pci-e 98 pins pcb layout PCI-Express 2.0 X8 connector Pinout IRZ 46 graphic card circuit diagram ISL6113 l48 diode marking x16 MOSFET marking -ddr -sdram -rimm -sram -fla ISL6112 ISL6114
Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either
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ISL6113,
ISL6114
FN6457
ISL6114
5m-1994.
IRZ 40
pci-e 98 pins pcb layout
PCI-Express 2.0 X8 connector Pinout
IRZ 46
graphic card circuit diagram
ISL6113
l48 diode marking
x16 MOSFET marking -ddr -sdram -rimm -sram -fla
ISL6112
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IXAN0010
Abstract: 0010 ixan0010 4 ixan0010 2 MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS 18V, 400mW Zener diodes protect mosfet igbt drivers theory IXDD408 IXDD
Text: IXAN0010 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers 2. Types of Drivers
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IXAN0010
D-68623;
IXAN0010
0010
ixan0010 4
ixan0010 2
MOSFET IGBT DRIVERS THEORY AND APPLICATIONS
MOSFET IGBT THEORY AND APPLICATIONS
18V, 400mW Zener diodes protect
mosfet igbt drivers theory
IXDD408
IXDD
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capacitor siemens 4700 35
Abstract: transister mosfet transister circuit PTF 101 tantulum capacitor G200 K1206 power transister data transistor k 425
Text: PTF 10048 30 Watts, 2.1–2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor Description The PTF 10048 is an internally matched common source N-channel enhancement-mode lateral MOSFET specifically intended for WCDMA applications as well as other large signal amplifier applications
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K1206
1-877-GOLDMOS
1301-PTF
capacitor siemens 4700 35
transister
mosfet transister circuit
PTF 101
tantulum capacitor
G200
K1206
power transister data
transistor k 425
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G200
Abstract: K1206 103 smt resistor
Text: PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.
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K1206
1-877-GOLDMOS
1301-PTF
G200
K1206
103 smt resistor
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IXDD 614
Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers
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AN0002
RH159NB
D-68623;
IXDD 614
BJT de potencia
zener diode 1N PH 48
CHN 841
lm339 igbt driver
ups transformer winding formula
mosfet igbt drivers theory
MOSFET IGBT DRIVERS THEORY AND APPLICATIONS
chn 614 diod
MOSFET IGBT THEORY AND APPLICATIONS
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k1206
Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
Text: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
k1206
cgs resistor c7
A123
transistor l2
k1206 220 r3
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k1206
Abstract: G200 LDMOS transistor 1W
Text: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
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K1206
1-877-GOLDMOS
1301-PTF
k1206
G200
LDMOS transistor 1W
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Untitled
Abstract: No abstract text available
Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features • VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards
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GA03IDDJT30-FR4
GA03IDDJT30-FR4
FOD3182
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circuit diagram of 24V 20A SMPS
Abstract: Charge Pumps
Text: ISL6144 Data Sheet December 15, 2006 FN9131.2 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.
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ISL6144
FN9131
ISL6144
circuit diagram of 24V 20A SMPS
Charge Pumps
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48V SMPS
Abstract: smps 10w 5V ISL6144 ISL6144IR ISL6144IV ISL6144IVZA MO-220 48vdc smps circuit diagram 48v smps led driver ISL6144IVZ
Text: ISL6144 Data Sheet March 23, 2006 FN9131.1 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.
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ISL6144
FN9131
ISL6144
48V SMPS
smps 10w 5V
ISL6144IR
ISL6144IV
ISL6144IVZA
MO-220
48vdc smps circuit diagram
48v smps led driver
ISL6144IVZ
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rf mosfet ericsson
Abstract: k1206 cgs resistor c7
Text: e PTF 10112 60 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10112 is a common source n-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts minimum output power. Ion implantation,
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
rf mosfet ericsson
k1206
cgs resistor c7
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REG IC 48V IN 12V 10A OUT ic
Abstract: smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144 ISL6144IRZA ISL6144IVZA
Text: ISL6144 Data Sheet January 6, 2011 FN9131.6 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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ISL6144
FN9131
ISL6144
REG IC 48V IN 12V 10A OUT ic
smps Power Supply Schematic Diagram
40A Adjustable Power Supply Schematic Diagram
48V SMPS
DRIVERS high-speed power MOSFET
smps 10w 12V
smps 10w 5V
ISL6144IRZA
ISL6144IVZA
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48V SMPS
Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
Text: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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ISL6144
FN9131
ISL6144
48V SMPS
smps 48v 12v
ISL6144IV
ISL6144IVZA
MO-220
0805 resistor package
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REG IC 48V IN 12V 10A OUT
Abstract: circuit diagram of mosfet based smps power supply 40A Adjustable Power Supply Schematic Diagram 48V SMPS schematic diagram 48v dc convertor 48vdc smps circuit diagram REG IC 48V 40A P channel MOSFET 10A schematic ac-dc converter mtbf 3.3V 1A 4W FN9131
Text: ISL6144 Data Sheet November 3, 2009 FN9131.4 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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ISL6144
FN9131
ISL6144
REG IC 48V IN 12V 10A OUT
circuit diagram of mosfet based smps power supply
40A Adjustable Power Supply Schematic Diagram
48V SMPS
schematic diagram 48v dc convertor
48vdc smps circuit diagram
REG IC 48V 40A
P channel MOSFET 10A schematic
ac-dc converter mtbf 3.3V 1A 4W
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Untitled
Abstract: No abstract text available
Text: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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ISL6144
FN9131
ISL6144
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fuse fall
Abstract: 9V 1A smps
Text: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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ISL6144
FN9131
ISL6144
fuse fall
9V 1A smps
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P4917-ND
Abstract: PTF 10019 G200 10019
Text: PTF 10019 70 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure
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34apacitor
P4917-ND
P5276
1-877-GOLDMOS
1301-PTF
P4917-ND
PTF 10019
G200
10019
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rf mosfet ericsson
Abstract: 212-136 G200 K1206 mosfet 6 ghz PTF10035
Text: PTF 10035 30 Watts, 1.9–2.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10035 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts power output.
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K1206
1-877-GOLDMOS
1301-PTF
rf mosfet ericsson
212-136
G200
K1206
mosfet 6 ghz
PTF10035
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capacitor 100uF 50V
Abstract: resistor 220 ohm resistor qbk PTF 10154 capacitor 10uf DIGIKEY
Text: PTF 10154 85 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10154 is an internally matched 85–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surface
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0805CS-080
1-877-GOLDMOS
1522-PTF
capacitor 100uF 50V
resistor 220 ohm
resistor qbk
PTF 10154
capacitor 10uf DIGIKEY
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k1206
Abstract: RF Transistor 1500 MHZ
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
RF Transistor 1500 MHZ
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10125
Abstract: G200 K1206 rf mosfet ericsson
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated
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K1206
1-877-GOLDMOS
1301-PTF
10125
G200
K1206
rf mosfet ericsson
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