MDR 68 pin configuration
Abstract: CGY MW cgy180 pae1
Text: CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT Application Note No. 004 Abstract In the following content a high efficiency GaAs MMIC power amplifier application for DECT is presented. The CGY 180 is characterized on a cost effective and easy to
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MW12-package
OT223-size)
MW-12
EHT08640
GND11]
MDR 68 pin configuration
CGY MW
cgy180
pae1
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amplifier 900mhz
Abstract: amplifier siemens marking RF 98 CGY93P
Text: CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped Package CGY 93P
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Q62702G72
amplifier 900mhz
amplifier siemens
marking RF 98
CGY93P
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93 ab chip
Abstract: No abstract text available
Text: GaAs MMIC CGY 93 Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package CGY 93
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MW-16
GPW05969
93 ab chip
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GSM vco
Abstract: gsm 900 amplifier BFP420 Transistor BFR 98 BAS40-04 BFR93AW LQG21N Dual Band Power Amplifier 1 Schematic of the CGY K 3264 transistor IC210
Text: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the
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EHT09097
EHT09123
EHT09124
GSM vco
gsm 900 amplifier
BFP420
Transistor BFR 98
BAS40-04
BFR93AW
LQG21N
Dual Band Power Amplifier 1 Schematic of the CGY
K 3264 transistor
IC210
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gsm vco
Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
Text: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the
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EHT09097
EHT09123
EHT09124
gsm vco
bfr93aw schematic
gsm 900 amplifier
k 3531 transistor
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BZW 55 DIODE ZENER
Abstract: diode bzw CGY 8 pin DIODE ZENER BZW 03 S11 zener diode 22C6V2 S22 zener diode Q68000-A5953
Text: CGY 21 GaAs MMIC ● ● ● ● ● ● ● ● ● CGY 21 Two-stage monolithic microwave IC MMIC amplifier All gold metallization Chip fully passivated Operating voltage range: 3 to 6 V 50 Ω input/output; RLIN RLOUT > 10 dB Gain: 21 dB at 500 MHz Low noise figure: 3.9 dB at 500 MHz
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Q68000-A5953
BZW 55 DIODE ZENER
diode bzw
CGY 8 pin
DIODE ZENER BZW 03
S11 zener diode
22C6V2
S22 zener diode
Q68000-A5953
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Untitled
Abstract: No abstract text available
Text: GaAs Components Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT . . . . . . . . . . . . . . . . .81 15 GHz GaAs-FET Buffered Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .85
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CGY180
Abstract: Q68000-A8882 MMIC marking 81 Siemens MMIC DECT siemens F1189
Text: GaAs MMIC CGY 180 Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V
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Q68000-A8882
CGY180
Q68000-A8882
MMIC marking 81
Siemens MMIC
DECT siemens
F1189
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smd marking AAAA
Abstract: AAAA mmic HL 30 MMIC marking 81 CGY94 Q68000-A9124 Siemens MMIC marking aaa marking AAAA
Text: GaAs MMIC CGY 94 Preliminary Datasheet * Power amplifier for GSM or AMPS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V
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Q68000-A9124
smd marking AAAA
AAAA
mmic HL 30
MMIC marking 81
CGY94
Q68000-A9124
Siemens MMIC
marking aaa
marking AAAA
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siemens capacitors
Abstract: marking code 22nh sot23 0805CS-220XMBC MMIC marking code 101 capacitor 27pf marking code 10 sot23 marking ud MW-6 Y5 sot23 CGY59
Text: CGY 59 GaAs MMIC Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave IC (MMIC)
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950MHz
85GHz
200MHz
CGY59
siemens capacitors
marking code 22nh sot23
0805CS-220XMBC
MMIC marking code 101
capacitor 27pf
marking code 10 sot23
marking ud
MW-6
Y5 sot23
CGY59
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st 9548
Abstract: p0603 CGY99 DCS1800 Q62702-G0128 C4 MMIC INFINEON PART MARKING MMIC marking CODE c4
Text: GaAs MMIC CGY 99 Preliminary Datasheet * Broadband 3-stage Power Amplifier [ 800.2400 Mhz ] * GSM, AMPS, PCN, PCS * Operating voltage range: 2.7 to 6.0 V
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CGY99
Q62702-G0128
P-TSSOP10-2
st 9548
p0603
CGY99
DCS1800
Q62702-G0128
C4 MMIC
INFINEON PART MARKING
MMIC marking CODE c4
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MMIC SOT 143 marking CODE 77
Abstract: cgy50 Q68000-A8370 SIEMENS MMIC mmic marking L mmic HL 30 MARKING SOT-143 C5 siemens rs 806
Text: CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 Ω gain block * Application range: 100 MHz to 3 GHz
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Q68000-A8370
OT-143
MMIC SOT 143 marking CODE 77
cgy50
Q68000-A8370
SIEMENS MMIC
mmic marking L
mmic HL 30
MARKING SOT-143 C5
siemens rs 806
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B10T
Abstract: SMD 0805 capacitor vtr 150 MMIC code D smd marking f2 HP MMIC marking gain stage GaAs MMIC AMPLIFIER MMIC marking 81 SMD INDUCTOR Marking Code CGY181
Text: CGY 181 GaAs MMIC Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V
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Q68000-A8883
B10T
SMD 0805 capacitor
vtr 150
MMIC code D
smd marking f2
HP MMIC
marking gain stage GaAs MMIC AMPLIFIER
MMIC marking 81
SMD INDUCTOR Marking Code
CGY181
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CGY52
Abstract: Q68000-A8615 MMIC marking code 52 23/MMIC marking code 52
Text: CGY 52 GaAs MMIC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V
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CGY52
Q68000-A8615
100pF
50Ohm
CGY52
Q68000-A8615
MMIC marking code 52
23/MMIC marking code 52
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CGY196
Abstract: ISM2400 ISM900 Q62702-G0080 IPC-9501 infineon reflow
Text: GaAs MMIC CGY 196 Datasheet * Multiband Power Amplifier [ 800.3500 Mhz ] * DECT,PHS,PWT,Bluetooth,ISM900,ISM2400,WLL * Single Voltage Supply * Operating voltage range: 2V to 6 V
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ISM900
ISM2400
Q62702-G0080
SCT598
D-81541
CGY196
Q62702-G0080
IPC-9501
infineon reflow
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IPC-9501
Abstract: IPC-4202 infineon databook CGY197 ISM2400 ISM900 Q62702-G0116 Siemens Halbleiter
Text: GaAs MMIC CGY 197 Preliminary Datasheet • • • • • • • • • • ESD: Multiband Power Amplifier [ 800.3500 Mhz ] DECT,PHS,PWT,Bluetooth,ISM900,ISM2400
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ISM900
ISM2400
Q62702-G0116
SCT598
IPC-9501
IPC-4202
infineon databook
CGY197
ISM2400
Q62702-G0116
Siemens Halbleiter
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SCT595
Abstract: IPC-9501 CGY196 Q62702-G0080 soldering voids SCT-598 marking D6s
Text: GaAs MMIC CGY 196 Datasheet * Broadband Power Amplifier [ 800.3500 Mhz ] * DECT,PHS,PCS,GSM,AMPS,WLAN,WLL * Single Voltage Supply * Operating voltage range: 2.0to 6 V
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Q62702-G0080
SCT598
SCT595
IPC-9501
CGY196
Q62702-G0080
soldering voids
SCT-598
marking D6s
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mmic marking L
Abstract: mmic amplifier marking code l CGY195 Siemens MMIC TS81 CGY 8 pin MMIC marking 81
Text: GaAs MMIC CGY 195 Tentative Data l l l l l RF_out / VD2 Power amplifier for DECT application, single voltage supply Operating voltage range: 2.7 to 6 V
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26dBm
VPW05980
mmic marking L
mmic amplifier marking code l
CGY195
Siemens MMIC
TS81
CGY 8 pin
MMIC marking 81
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marking code 016 MMIC
Abstract: RS 302 440 40 mmic marking L A444 CGY40 Q68000-A4444 mmic code marking P 18 MMIC marking code 132 MMIC marking CODE c4 MMIC marking CODE 06
Text: CGY 40 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz
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Q68000-A4444
marking code 016 MMIC
RS 302 440 40
mmic marking L
A444
CGY40
Q68000-A4444
mmic code marking P 18
MMIC marking code 132
MMIC marking CODE c4
MMIC marking CODE 06
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smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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PAE1
Abstract: No abstract text available
Text: Infineon N c h n c lo g ie i CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT Application Note No. 004 Abstract In the following content a high efficiency GaAs MMIC power amplifier application for DECT is presented. The CGY 180 is characterized on a cost effective and easy to
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MW12-package
OT223-size)
EHT08640
PAE1
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IH33
Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Text: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the
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CMY210
Abstract: CF750 upconverter cmy 210 L band upconverter
Text: GaAs Components Infineon ♦e c f i n c l o g i a ï Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT.81 15 GHz GaAs-FET Buffered
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Untitled
Abstract: No abstract text available
Text: SIEMENS CGY 93P GaAs MMIC Preliminary Data • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code taped
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Q62702G72
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