CMLDM7005
Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR
Text: Product Brief CMLDM7005 Dual, N-Channel CMLDM8005 (Dual, P-Channel) CMLDM7585 (N & P-Channel) SOT-563 20V, 650mA Dual, Complementary MOSFETs in the miniature SOT-563 package N-Channel P-Channel N & P-Channel Typical Electrical Characteristics Central Semiconductor’s CMLDM7005 (Dual, N-Channel),
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CMLDM7005
CMLDM8005
CMLDM7585
650mA
OT-563
OT-563
CMLDM7005
Power MOSFET p-Channel n-channel dual
CMLDM8005 TR
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nchannel
Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel
Text: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ
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DN2530
DN2535
DN2540
DN2624
DN2640
LND150
LND250
nchannel
DN2530
DN2535
DN2540
DN2624
DN2640
LND150
LND250
n-channel
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CMRDM Series
Abstract: PB CMRDM Series CMRDM CMRDM3590
Text: Product Brief CMRDM3590 20V, 160mA N-Channel CMRDM7590 (20V, 140mA P-Channel) CMRDM3575 (20V, N-Channel & P-Channel) Dual, MOSFETs in the SOT-963 package SOT-963 Typical Electrical Characteristics Central Semiconductor’s CMRDM3590 (N-Channel), CMRDM7590
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CMRDM3590
160mA
CMRDM7590
140mA
CMRDM3575
OT-963
OT-963
CMRDM Series
PB CMRDM Series
CMRDM
CMRDM3590
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Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
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SSM6E03TU
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Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
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SSM6E03TU
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Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU • 1.8 V driveP-channel MOSFET and 1.5 V driveN-channel MOSFET incorporated into one package. 2.1±0.1 • Low power dissipation due to P-channel MOSFET that features low
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SSM6E03TU
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Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU • 1.8 V driveP-channel MOSFET and 1.5 V driveN-channel MOSFET incorporated into one package. 2.1±0.1 • Low power dissipation due to P-channel MOSFET that features low
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SSM6E03TU
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Untitled
Abstract: No abstract text available
Text: Product Brief CWDM305P Single, 5.3A P-Channel CWDM305PD (Dual, 5.3A P-Channel) CWDM305ND (Dual, 5.8A N-Channel) SOIC-8 30V, MOSFETs in the SOIC-8 package Typical Electrical Characteristics Central Semiconductor’s CWDM305P (Single, 5.3A P-Channel), CWDM305PD (Dual, 5.3A P-Channel), and CWDM305ND (Dual,
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CWDM305P
CWDM305PD
CWDM305ND
CWDM305ND
CWDM305P
CWDM305PD
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Untitled
Abstract: No abstract text available
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
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Untitled
Abstract: No abstract text available
Text: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance
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-200V
TC2320TG
TC2320
TC2320TG
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SSM6E01TU
Abstract: HIGH POWER MOSFET TOSHIBA
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
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SSM6E01TU
HIGH POWER MOSFET TOSHIBA
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Si4500BDY
Abstract: Si4500BDY-T1 Si4500
Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3
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Si4500BDY
Si4500BDY-T1
Si4500BDY--E3
Si4500BDY-T1--E3
S-41428--Rev.
26-Jul-04
Si4500
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Untitled
Abstract: No abstract text available
Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3
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Si4500BDY
Si4500BDY-T1
Si4500BDY--E3
Si4500BDY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4500BDY New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = - 4.5 V
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Si4500BDY
Si4500BDY-T1
S-31410--Rev.
07-Jul-03
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Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
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SiA519EDJ
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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KTA 3-25
Abstract: SSM6E01TU SSM6E
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low
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SSM6E01TU
KTA 3-25
SSM6E01TU
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Untitled
Abstract: No abstract text available
Text: Si9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –20 20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = –10 V "2.5 0.350 @ VGS = –4.5 V "2.0
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Si9942DY
Si4532DY
Si4539DY
Si6452DQ
S-51408--Rev.
20-Jan-97
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Untitled
Abstract: No abstract text available
Text: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V
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Si4503DY
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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TC2320
-200V
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TC2320TG
inherent00mA
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Untitled
Abstract: No abstract text available
Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low
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TC2320
-200V
TC2320TG
TC2320TG
i00mA
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Untitled
Abstract: No abstract text available
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
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Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
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SiA519EDJ
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V
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Si4503DY
S-20894--Rev.
17-Jun-02
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Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
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SiA519EDJ
SC-70-6
SiA533EDJ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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