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    CHIP DIE HP TRANSISTOR Search Results

    CHIP DIE HP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    CHIP DIE HP TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor k 4212 fet

    Abstract: Silicon Bipolar Transistor Hewlett-Packard transistor k 4212
    Text: Transistor Chip Use Application Note A005 Part I. Assembly Considerations 1.0 Chip Packaging for Shipment 1.1 General Hewlett-Packard transistor chips are shipped in chip carriers with a clear or black elastomer as a carrier medium. There are up to 100 chips


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    5091-8802E 5968-3242E transistor k 4212 fet Silicon Bipolar Transistor Hewlett-Packard transistor k 4212 PDF

    GaAs FET operating junction temperature

    Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
    Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .


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    ED-19, 5966-3084E GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2 PDF

    AN-S003

    Abstract: 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700
    Text: MODAMP Silicon MMIC Chip Use Application Note S009 Introduction This Application Note supplies information needed to layout and assemble circuits when using Hewlett-Packard’s MODAMP silicon MMIC amplifiers in chip form. Section I gives an overview of the


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    5091-9054E AN-S003 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low Noise Figure: 1.1 dB Typical at 12 GHz • High Associated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


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    ATF-13100 ATF-13100 5965-8694E PDF

    MQ1129

    Abstract: MD-1129 MD1123 MD1129 MD1129F MD1130 MD1130F
    Text: MDI 129 s'ucon MDI 129F MQ1129 MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation ap­ plications. • Excellent Temperature Tracking — MD1129.F


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    MD1129 MD1129F MQ1129 MD1129 10/iAdc MD1129, MD1129F) 100MAdc, MQ1129 MD-1129 MD1123 MD1130 MD1130F PDF

    a1270* transistor

    Abstract: 1689c hp plotter
    Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2


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    5091-6489E 5968-1410E a1270* transistor 1689c hp plotter PDF

    NFF16101

    Abstract: PCC HP
    Text: APPLICATIONS FILM CAPACITORS FOLIENKONDENSATOREN Ê 1 Power Capacitor Chips from EPCOS make converters lighter and more compact. Dank der PCCTechnik von EPCOS werden Umrichter immer schlanker. PACKING A PUNCH Power Capacitor Chips for lean converter design. Capable of handling voltages up to


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    5043

    Abstract: optocoupler hcpl HP 2530 optocoupler MARKING SMD IC CODE 8-pin HP 2531 optocoupler
    Text: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device


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    HCPL-553X HCPL-653X HCPL-257K HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135, 6N136, HCPL-2530/ 5043 optocoupler hcpl HP 2530 optocoupler MARKING SMD IC CODE 8-pin HP 2531 optocoupler PDF

    HP 2531

    Abstract: HP 2531 optocoupler 2n3904 smd pin configuration HP RF TRANSISTOR GUIDE transistor rf type M 2530 gold detectors circuit HCPL-5501 TRANSISTOR SMD MARKING CODE pa optocoupler HP HCPL-653X
    Text: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device


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    HCPL-553X HCPL-653X HCPL-257K HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135, 6N136, HCPL-2530/ HP 2531 HP 2531 optocoupler 2n3904 smd pin configuration HP RF TRANSISTOR GUIDE transistor rf type M 2530 gold detectors circuit HCPL-5501 TRANSISTOR SMD MARKING CODE pa optocoupler HP HCPL-653X PDF

    2n3904 smd pin configuration

    Abstract: 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530
    Text: H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DESC


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    HCPL-553X HCPL-653X HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135, 6N136, HCPL-2530/ HCPL-5530) 2n3904 smd pin configuration 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530 PDF

    n06hd

    Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
    Text: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and


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    TND310 TND310/D n06hd N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220 PDF

    Diode SMD ED 9C

    Abstract: transistor smd marking Kd LA 5530
    Text: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. F ea tu r es • D ual M arked w ith D ev ice


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    HCPL-553X HCPL-653X HCPL-257K HCPL-655X HCPL-550X IL-PRF-38534 L-38534, CPL-2530/ MIL-PRF-38534 MIL-PRF-38534. Diode SMD ED 9C transistor smd marking Kd LA 5530 PDF

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    transistor WT6

    Abstract: transistor WT6 45 transistor WT6 Equivalent WT6 transistor 651-220K pin configuration of ic 1496
    Text: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y if 50f| • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE


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    K 1358 fet transistor

    Abstract: DIE CHIP 51 FET
    Text: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y j 50->| 3? • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE


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    Untitled

    Abstract: No abstract text available
    Text: MwT-A8 16 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y p -7 5 * j • • > • • • • p -7 5 * J a 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE 1200 MICRON GATE WIDTH


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    transistor MWTA 06

    Abstract: No abstract text available
    Text: MwT-11 M ic r o w a v e 14 GHz High Power GaAs FET tec h no lo g y l«-75 -*| i«-75 -*| 4> e » W7mi F • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION


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    wT-11 in11m MwT-11 transistor MWTA 06 PDF

    Ablebond 190

    Abstract: ablebond technical
    Text: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: 100 kHz Typical • Single Supply Operation:


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    HMMC-5220 HMMC-5220 Ablebond 190 ablebond technical PDF

    Ablebond 36-2

    Abstract: 71-1LM1 HMMC-5220 Ablebond 190 ablebond technical hmmc-5
    Text: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:


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    HMMC-5220 HMMC-5220 5968-1782E Ablebond 36-2 71-1LM1 Ablebond 190 ablebond technical hmmc-5 PDF

    MwT-671

    Abstract: LQD 421 MWT671HP lsoj
    Text: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 4m * • • • • • • Units in pun 4-50-fc 70 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH


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    bl24100 000057b MwT-671 LQD 421 MWT671HP lsoj PDF

    transistor bf 244

    Abstract: AT-21400 D42E Rbl 69 AT-21400-G chip die hp transistor
    Text: blE J> HEWLETT-PACKARD/ CMPNTS HEW LETT PACKARD m m MMi475flM □ □□t17cU Features • • • • 40B AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor Chip Outline1 Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs High S21 Gain: 9.5 dB Typical at 4 GHz


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    MM47SÃ t17cll AT-21400 AT-21400 transistor bf 244 D42E Rbl 69 AT-21400-G chip die hp transistor PDF

    transistor smd 1FT

    Abstract: AT12L
    Text: W h a lH E W L E T T $ mLKM PACKARD Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X ‘ See matrix for available extensions. Features


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    HCPL-553X HCPL-653X HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135D MIL-PRF-38534. 5964-3910E transistor smd 1FT AT12L PDF

    MICRON POWER RESISTOR MLS

    Abstract: chip die hp transistor
    Text: MwT-A11 14 GHz High Power GaAs FET MICROWAVE TECHNOLOGY J*- 7S +| • • • rn inmmin 101ini r F Ì - 86 -J 1/1 ''I t- 75 J £ Ì - 186 - * N- + 68 mmt m i 343 - 1 • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN


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    MwT-A11 MwT-A11 MICRON POWER RESISTOR MLS chip die hp transistor PDF

    transistor MWTA 06

    Abstract: mwta 06
    Text: MwT-A11 14 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • • • • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 2400 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION CHOICE OF CHIP AND ONE


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    MwT-A11 MwT-A11 syste80 000Gb23 transistor MWTA 06 mwta 06 PDF