ST CHN 226
Abstract: CHN 220 diode
Text: March 23, 2011 IRS2052MPbF 2 CH Digital Audio Amplifier Features • • • • • • • • • • • Product Summary 2 channel integrated analog input Class D audio amplifier driver Versatile protection control enabling latched, non-latched, or host controlled
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IRS2052MPbF
ST CHN 226
CHN 220 diode
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DIODE N1100
Abstract: IRS2092 CHN 220 diode IRS2052M
Text: January 28th, 2011 IRS2052MPbF 2 CH Digital Audio Amplifier Features • • • • • • • • • • Product Summary 2 channel integrated analog input Class D audio amplifier driver Versatile protection control enabling latched, non-latched, or host controlled
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IRS2052MPbF
IRS2052M
IRS2092
IRS2052M
DIODE N1100
CHN 220 diode
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CHN 220 diode
Abstract: IRS2092 audio amplifier circuit diagram MLPQ48 ST CHN 226 X2B marking CHN 125 IRS2052M VX2B CHN 51 irs2092
Text: March 23, 2011 IRS2052MPbF 2 CH Digital Audio Amplifier Features • • • • • • • • • • • Product Summary 2 channel integrated analog input Class D audio amplifier driver Versatile protection control enabling latched, non-latched, or host controlled
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IRS2052MPbF
CHN 220 diode
IRS2092 audio amplifier circuit diagram
MLPQ48
ST CHN 226
X2B marking
CHN 125
IRS2052M
VX2B
CHN 51
irs2092
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CHN 234 diode
Abstract: dali master schematic GRM188B31H104KA92D DMX RECEIVER diode chn 115 dali power supply circuit diagram dmx512 RK73B1 chn 711 dali schematic
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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G0706
CHN 234 diode
dali master schematic
GRM188B31H104KA92D
DMX RECEIVER
diode chn 115
dali power supply circuit diagram
dmx512
RK73B1
chn 711
dali schematic
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SCR PIN CONFIGURATION CHN 035
Abstract: AD7912 AD7912ARM AD7922 DB10 VT235 16t5t
Text: PRELIMINARY TECHNICAL DATA a Preliminary Technical Data FEATURES Fast Throughput Rate: 1MSPS Specified for VDD of 2.35 V to 5.25 V Low Power: 3.6 mW typ at 1MSPS with 3V Supplies 12.5mW typ at 1MSPS with 5V Supplies Wide Input Bandwidth: 71dB SNR at 100kHz Input Frequency
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100kHz
AD7912/4
MO-193BA
MO-187AA
SCR PIN CONFIGURATION CHN 035
AD7912
AD7912ARM
AD7922
DB10
VT235
16t5t
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VT235
Abstract: AD7911 AD7921 DB10 chn 135 CHN 804 ad7802
Text: PRELIMINARY TECHNICAL DATA a 2-Channel, 2.35 V to 5.25 V, 250 KSPS,10-/12-Bit ADCs AD7911/AD7921 Preliminary Technical Data FEATURES Throughput Rate: 250 KSPS Specified for VDD of 2.35 V to 5.25 V Low Power: TBD mW typ at 250 KSPS with 3V Supplies TBD mW typ at 250 KSPS with 5V Supplies
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10-/12-Bit
AD7911/AD7921
100kHz
MO-193BA
MO-187AA
VT235
AD7911
AD7921
DB10
chn 135
CHN 804
ad7802
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CHN 507
Abstract: LUPA-1300-2 AN54468 CYIL2SM1300-EVAL FPN 82 LUPA1300 LUPA-1300 7B 1284 AN54214 CRC10
Text: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels FPN correction enables the sensor to output ready to use image data for most applications. To enable simple and reliable system
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CYIL2SM1300AA
CHN 507
LUPA-1300-2
AN54468
CYIL2SM1300-EVAL
FPN 82
LUPA1300
LUPA-1300
7B 1284
AN54214
CRC10
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CHN 507
Abstract: CHN 234 diode LUPA1300-2 crc 13002 LUPA-1300-2 MEET CHN 507 chn 248 chn 630 datachannel12 AN54214
Text: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels The peak responsivity of the 14 µm x 14 µm 6T pixel is 7350 V.m2/W.s. Dynamic range is measured at 57 dB. In full frame video mode, the sensor consumes 1350 mW from the 2.5V
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CYIL2SM1300AA
CHN 507
CHN 234 diode
LUPA1300-2
crc 13002
LUPA-1300-2
MEET CHN 507
chn 248
chn 630
datachannel12
AN54214
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CHN 507
Abstract: MEET CHN 507 CHN 943 LUPA1300-2 chn 630 JEDEC J-STD-033b LUPA-1300 LUPA-1300-2 high speed cmos image sensor smd glass diode color codes
Text: CYIL2SM1300AA LUPA 1300-2 High Speed CMOS Image Sensor Features The peak responsivity of the 14 µm x 14 µm 6T pixel is 7350 V.m2/W.s. Dynamic range is measured at 57 dB. In full frame video mode, the sensor consumes 1350 mW from a 2.5V power supply. The sensors integrate A/D conversion, on-chip timing for
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CYIL2SM1300AA
10-Bit
CHN 507
MEET CHN 507
CHN 943
LUPA1300-2
chn 630
JEDEC J-STD-033b
LUPA-1300
LUPA-1300-2
high speed cmos image sensor
smd glass diode color codes
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LUPA-1300-2
Abstract: LUPA1300-2 AN57864 AN54468 ke63 CHN 816 Color Filter Array CFA transistor CHN 64 149 transistor CHN 64 229 -20/LUPA1300-2
Text: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate
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NOIL2SM1300A
LUPA1300-2:
10-Bit
168-Pin
NOIL2SM1300A/D
LUPA-1300-2
LUPA1300-2
AN57864
AN54468
ke63
CHN 816
Color Filter Array CFA
transistor CHN 64 149
transistor CHN 64 229
-20/LUPA1300-2
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AN57864
Abstract: LUPA-1300-2 AN54468 crc 13002 144x128 FIX32 CHN 234 diode
Text: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels FPN correction enables the sensor to output ready to use image data for most applications. To enable simple and reliable system
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CYIL2SM1300AA
AN57864
LUPA-1300-2
AN54468
crc 13002
144x128
FIX32
CHN 234 diode
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AN57864
Abstract: LUPA1300-2 LUPA-1300-2 NOIL2SM1300A-GDC CHN 816 CHN 234 diode LUPA-1300 CHN 633 -20/LUPA1300-2
Text: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate
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NOIL2SM1300A
LUPA1300-2:
10-Bit
168-Pin
NOIL2SM1300A/D
AN57864
LUPA1300-2
LUPA-1300-2
NOIL2SM1300A-GDC
CHN 816
CHN 234 diode
LUPA-1300
CHN 633
-20/LUPA1300-2
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Untitled
Abstract: No abstract text available
Text: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate
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NOIL2SM1300A
LUPA1300-2:
10-Bit
168-Pin
NOIL2SM1300A/D
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AN57864
Abstract: transistor CHN 64 229
Text: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate
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NOIL2SM1300A
LUPA1300-2:
10-Bit
168-Pin
NOIL2SM1300A/D
AN57864
transistor CHN 64 229
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AN57864
Abstract: LUPA-1300-2 JESD625-A LUPA1300 AN54468 CHN 633 diode AN5256 LUPA-1300 CYIL2SC1300AA-GZDC CHN 633 Diodes
Text: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels FPN correction enables the sensor to output ready to use image data for most applications. To enable simple and reliable system
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CYIL2SM1300AA
AN57864
LUPA-1300-2
JESD625-A
LUPA1300
AN54468
CHN 633 diode
AN5256
LUPA-1300
CYIL2SC1300AA-GZDC
CHN 633 Diodes
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circuit diagram of pulse width modulation
Abstract: laser drivers printer AD9560 AD9561 AD9561JR
Text: a FEATURES 50 MHz Pulse Rate 8-Bit Resolution Center, Left, or Right Justify Low Power: 700 mW typical Minimum Pulse Width: <5 ns Maximum PW: 100% Full Scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM AD9561 RAMP CLOCK INTERNAL TIMING OUTPUT LOGIC
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AD9561
AD9561
28-lead
circuit diagram of pulse width modulation
laser drivers printer
AD9560
AD9561JR
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transistor TO-92 crc 13002
Abstract: transistor CHN 137
Text: CYIL2SM1300AA LUPA-1300-2 High speed CMOS Image Sensor Features n 1280 x 1024 active pixels SXGA resolution . n 14 µm2 square pixels [based on the high-fill factor active pixel sensor technology of FillFactory (US patent No. 6,225,670 and others)] n On-chip 10-bit ADCs
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CYIL2SM1300AA
LUPA-1300-2
10-bit
168-pin
transistor TO-92 crc 13002
transistor CHN 137
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CHN 747
Abstract: oms 450 DIODE RK 306 CHN 450 E72873 MDD220-06N1 MDD220-08N1 MDD220-12N1 MDD220-14N1 rectifier bridge VU
Text: H71 B IIX Y 4t>flb22b 000171A n iX Y S Diode Modules MDD220 iTAV= 2 x 270 A VRRM = 600-1600 V Vmm V rm , Type V V Version 1 700 900 1300 1500 1700 600 600 1200 1400 1600 M D D 220-08N1 M D D 220-08N 1 M D D 220-12N 1 / z k S - M D D 220-16N1 Sym bol T e s t conditions
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4bflb52b
000171a
MDD220
MDD220-06N1
MDD220-08N1
MDD220-12N1
MDD220-14N1
MD0220-16N1
MDD220
CHN 747
oms 450
DIODE RK 306
CHN 450
E72873
MDD220-06N1
MDD220-08N1
MDD220-12N1
MDD220-14N1
rectifier bridge VU
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TSAL7400
Abstract: No abstract text available
Text: TSAL7400 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package Description T S A L7400 is a high efficiency infrared em itting diode in G aAIAs on G aAs technology, m olded in clear plastic packages. In com parison w ith the standard G aAs on G aAs
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TSAL7400
L7400
D-74025
ct-98
TSAL7400
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diode chn 940
Abstract: chn 940 TSAL6400 L6400
Text: TSAL6400 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package Description T S A L6400 is a high efficiency infrared em itting diode in G aAIAs on G aAs technology, m olded in clear, bluegrey tinted plastic packages. In com parison w ith the standard G aAs on G aAs
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TSAL6400
L6400
D-74025
ct-98
diode chn 940
chn 940
TSAL6400
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7600S
Abstract: OP550 OP560 SQ63 0P550
Text: OPTEK TE CHN OLO GY D | t 7 c1âSflO GOO OIEO INC DtE Optoelectronics Division T R W Electronic Components Group T - m i-i3 - Product Bulletin SQ63 Janu ary 198 5 1 I T‘ R w ' Y . • G a A IA s Plastic Infrared Em ittin g Diodes Types 0P240SL, QP240SLC, 0P240SLB, OP24QSLA
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QP240SL,
0P240SLC,
0P24QSLB,
0P240SLA
J55l1
B71B032
7600S
OP550
OP560
SQ63
0P550
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ntc siemens
Abstract: No abstract text available
Text: SIEMENS I n  f G a A s - t a s e r D io d e 1 DO m W S FH 487401 w it h F C - c o n n e c t o r 7 6 0 m W <•;> SFH 437406 F lo ta re s Moriochfofnaiic. coherent : sei;8^co source fo; cu&se a^d cw-Qpeifaiion MGCVQ q:.iá'!Í!.i?T':-w«í¡ •Kïri.icîtir*5 ivi i fi: nêo i;:ty;>r' technology
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4874G1
ntc siemens
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4N46
Abstract: CHN 220 diode
Text: OPTEK TECHNOLOGY Optoelsctronics Division TRW Electronic Components Group INC ObE D | bT^flSflO 00002713 0 | 1987 Cost Saver Product! Call TRW for more information! Product Bulletin 5248 January 1985 JT 7 ^ ml WW V S Low Input Current, High Gain Optically Coupled Isolators
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E68730
4N46
CHN 220 diode
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marking CODE 62A general
Abstract: TSM110N06CZ Diode 62a DEVICE MARKING CODE 150A N-Channel power MOSFET TL 413 TSM110N06 GENERAL SEMICONDUCTOR MARKING 62A 5642 tube
Text: $ Preliminary TSM110N 06 55V N-Channel Power MOSFET T A IW A N S E M IC O N D U C T O R pb RoHS C O M P L IA N C E TO -220 • .s i PRODUCT SUM M ARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS{on)(iYlO) Id (A) 55 8 @ Vcs=10V 62 123 G eneral Description
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O-220
TSM110N06
TSM100N06
O-22C)
marking CODE 62A general
TSM110N06CZ
Diode 62a
DEVICE MARKING CODE 150A
N-Channel power MOSFET
TL 413
TSM110N06
GENERAL SEMICONDUCTOR MARKING 62A
5642 tube
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