Untitled
Abstract: No abstract text available
Text: 25307^2 Ratings TET «CO L and characteristics □ OOSm.G of Fuji I GBT M B T Module 2 . Equivalent Circuit of Module 3 . Equivalent Ci rcui t -r4CO -OE ~ \/z -D Current Control Ci rcui t ó 4 . Absolute Maxima Ratings ( Tj =25 *C) Items This material and the information herein ¡s the property of
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8MBI50J-060
6x50A
5F5062
50A//ZS
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oscillator tunnel diode
Abstract: tunnel diode "tunnel diode" oscillator GaAs tunnel diode Gallium Arsenide tunnel diode back Tunnel diode "tunnel diode" tunnel diode oscillator tunnel diode GaAs "back diode"
Text: CUSTOM COMPONENTS INC IflE D • 2570252 □□□□□ED 1 ■ x~e>*}~ II OSCILLATOR DIODES GALLIUM ARSENIDE rm RS GHz ohm s ohm s Min. (Typ.) (Typ.) fro Part Number ci Æ » 4515A 15 45 4 .76 4520A 20 45 5 .50 4525A 25 45 6 .36 4530A 30 45 7 .28 2515A
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23HR400BD
oscillator tunnel diode
tunnel diode
"tunnel diode" oscillator
GaAs tunnel diode
Gallium Arsenide tunnel diode
back Tunnel diode
"tunnel diode"
tunnel diode oscillator
tunnel diode GaAs
"back diode"
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Untitled
Abstract: No abstract text available
Text: 2319 M PR E CI NE D ON S I CHI A SOLDER TERMINALS PIN TYPE PINS 2313 -X- Board Thickness Length V -X- Board Thickness Length V 1 2 3 .031 .062 .094 .051 .082 .113 1 2 3 4 .031 .062 .094 .125 .051 .084 .113 .145 2319-X-00-XX-00-00-07-0 2313-X-00-XX-00-00-07-0
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2319-X-00-XX-00-00-07-0
2313-X-00-XX-00-00-07-0
2321-X-00-XX-00-00-07-0
2706-X-00-XX-00-00-07-0
2530-X-00-XX-00-00-07-0
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CI D 2530
Abstract: No abstract text available
Text: 2319 M PR E CI NE D ON S I CHI A SOLDER TERMINALS PIN TYPE PINS 2313 -X- Board Thickness Length V -X- Board Thickness Length V 1 2 3 .031 .062 .094 .051 .082 .113 1 2 3 4 .031 .062 .094 .125 .051 .084 .113 .145 2319-X-00-XX-00-00-07-0 2313-X-00-XX-00-00-07-0
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2319-X-00-XX-00-00-07-0
2313-X-00-XX-00-00-07-0
2321-X-00-XX-00-00-07-0
2706-X-00-XX-00-00-07-0
2530-X-00-XX-00-00-07-0
CI D 2530
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PT 30 040 pa
Abstract: No abstract text available
Text: IN D @ UCT 1 K AN Hz CE ± 1 µ 0% H DC R (O hm s) In cI ∆L AD 10 C % In c∆L I AD 20 C % DC MA RES XI IST MU A M NC SR (O E hm F MI s) NI MU M (M HZ ) Surface Mount Toroidal Power Chokes PA R NU T MB ER Series PTHF-SM & PTKM-SM SERIES PTHF-SM HIGH SATURATION CORE
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PTHF10-50SM
PTHF25-50SM
PTHF50-50SM
PTHF75-50SM
PTHF100-50SM
PTHF150-50SM
PTHF200-50SM
PTHF250-50SM
PTHF330-50SM
PTHF10-40SM
PT 30 040 pa
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PTHF330-50SM
Abstract: PTHF100-30SM PTHF10-50SM PTHF25-50SM PTHF50-50SM PTHF75-50SM PTKM25-30SM 100-40SM
Text: IN D @ UCT 1 K AN Hz CE ± 1 µ 0% H DC R (O hm s) In cI ∆L AD 10 C % In c∆L I AD 20 C % DC MA RES XI IST MU A M NC SR (O E hm F MI s) NI MU M (M HZ ) Surface Mount Toroidal Power Chokes PA R NU T MB ER Series PTHF-SM & PTKM-SM SERIES PTHF-SM HIGH SATURATION CORE
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icl 2025
Abstract: 2005A TRANSISTOR IFW 2SA1591 2SC4133 BT 3713
Text: SANYO SEMICONDUCTOR CORP 32E D 7 cn ? G 7 f c 1 0 0 0 1 1 7 5 - G E3 T— 37— 13 V" T— 35— 11 P N P /N P N Epitaxial Planar Silicon Transistors 2051 Switching Applications with Bias Resistances R1=4.7kflf R2=47kO 2530 Applications Switching circuit, inverter circuit, interface circuit, driver circuit
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G00T175
47kohms)
T-91-20
SC-43
icl 2025
2005A
TRANSISTOR IFW
2SA1591
2SC4133
BT 3713
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IEC-444
Abstract: No abstract text available
Text: CRYSTAL UNITS TOYOCOM GENERAL Quartz crystals are electronic parts which can electrically excite the resonance frequency through the piezoelectric phenomenon. The frequency is determined by the orienta tion, or cut angle, and dimension of crystal blanks. The
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S12642
Abstract: S12642-0404PA-50 L10941-01 S12642-0404PB-50 HAMAMATSU L9181
Text: 2014 02 COVER STORY PAGE 2 Life Photonics – Innovative Solutions for Global Challenges OPTO-SEMICONDUCTOR PRODUCTS PAGE 10 Maximise MPPC performance with new MPPC modules ELECTRON TUBE PRODUCTS PAGE 14 Flat panel type PMT with high collection efficiency, H12700
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H12700
C3077-80
S12642
S12642-0404PA-50
L10941-01
S12642-0404PB-50
HAMAMATSU L9181
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ci 4534
Abstract: ph 2531 mf 2530
Text: DUAL HIGH SPEED OPTOCOUPLER O U T L IN E D R A W IN G HCPL-2530 HCPL-2531 HCPL-4534 S C H E M A T IC DIMENSIONS IN MILLIMETRES AND INCHES load and a 5.6 k f i p u ll-u p resistor. CTR o f the -2531 is 19% m inim um at l F = 16 mA. Features • HIGH SPEED: 1 Mb/s
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HCPL-2530
HCPL-2531
HCPL-4534
HCPL-4534)
E55361)
MIL-STD-1772
HCPL-5530/31)
PL-4534
ci 4534
ph 2531
mf 2530
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SMPS CIRCUIT DIAGRAM 5V 20A
Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Text: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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I27124
20MT120UF
E78996)
20KHz
SMPS CIRCUIT DIAGRAM 5V 20A
400v 20A ultra fast recovery diode
20MT120UF
diode 10a 400v
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Untitled
Abstract: No abstract text available
Text: ~ Semiconductor, Inc. TC7662B CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC7662B is a pin-compatible upgrade to the Indus try standard TC7660 charge pump voltage converter. It converts a +1,5V to +15V input to a corresponding -1 .5 to
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TC7662B
TC7662B
TC7660
10kHz.
35kHz
10kHz
S17bOE
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CI D 2530
Abstract: IC A 2531
Text: E s DUAL HIGH-SPEED TRANSISTOR OPTOCOUPLERS ï i OPTOELECTRONICS HCPL-2530 HCPL-2531 PACKAGE DIMENSIONS DESCRIPTION f t f t db ¿3 The HCPL-2530/31 dual o pto cou p le rs contain tw o com ple te ly separated 700 nm GaAsP LED em itters each o ptica lly c o up le d to
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HCPL-2530
HCPL-2531
HCPL-2530/31
10kV//xS
C1954
74bb851
CI D 2530
IC A 2531
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ir igbt 1200V 40A
Abstract: 20MT120UF E78996 bridge
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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20MT120UF
E78996)
20KHz
12-Mar-07
ir igbt 1200V 40A
20MT120UF
E78996 bridge
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Untitled
Abstract: No abstract text available
Text: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
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I27124
20MT120UF
E78996)
20KHz
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ultrafast diode 10a 400v
Abstract: X 0238 CE
Text: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
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I27124
20MT120UF
E78996)
20KHz
ultrafast diode 10a 400v
X 0238 CE
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diode 5dt
Abstract: ERW05-060
Text: X. SPECIFICATION DEVICE NAME : SILICON DIODE - TYPE NAME : E RW O5 - 0 6 0 SPEC. No. :_ DATE_ :_ F uji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric C o jid .
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H04-004-07
TCK220AC
20kHz
Duty505i
H04-004-03
ERW05-060
diode 5dt
ERW05-060
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Untitled
Abstract: No abstract text available
Text: 20MT120UFP Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
18-Jul-08
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full bridge driver 600v
Abstract: 20MT120UFP ultrafast igbt S610A
Text: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
E78996
2002/95/EC
18-Jul-08
full bridge driver 600v
20MT120UFP
ultrafast igbt
S610A
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20MT120UFP
Abstract: No abstract text available
Text: 20MT120UFP Vishay High Power Products "Full-Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient RoHS • 10 µs short circuit capability COMPLIANT • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
18-Jul-08
20MT120UFP
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20MT120UF
Abstract: 20MT120UFP E78996 full bridge t
Text: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
E78996
2002/95/EC
11-Mar-11
20MT120UF
20MT120UFP
E78996 full bridge t
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Untitled
Abstract: No abstract text available
Text: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-20MT120UFP www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft
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VS-20MT120UFP
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-20MT120UFP www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft
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VS-20MT120UFP
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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