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    CI EEPROM 2864 Search Results

    CI EEPROM 2864 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FM93CS46M8 Rochester Electronics LLC 93CS46 - EEPROM, 64X16, Serial, CMOS, PDSO8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC 93C56 - EEPROM, 128X16, Serial, CMOS, PDIP8 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC X28C512 - EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32 Visit Rochester Electronics LLC Buy
    X28C512JI-15 Rochester Electronics LLC X28C512 - EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32 Visit Rochester Electronics LLC Buy
    NM25C041EM8 Rochester Electronics LLC 25C041 - EEPROM, 512X8, Serial, CMOS, PDSO8 Visit Rochester Electronics LLC Buy

    CI EEPROM 2864 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KM2864A-25

    Abstract: KM2864A-30 KM2864A KM2864A-20 KM2864AH KM2864AH-20 KM2864AH-25
    Text: KM2864A/KM2864AH NMOS EEPROM 8 K x 8 Bit EEPROM with Latches and Auto-Write FEATURES GENERAL DESCRIPTION • Simple Byte Write — Single TTL Level W rite Signal — Latched Address and Data — Autom atic Internal Erase-be fore-Wrf te — Automatic W rite Timing


    OCR Scan     		KM2864A/KM2864AH KM2864A KM2864AH 200ns 120mAâ KM2864A/AH KM2864A-25 KM2864A-30 KM2864A KM2864A-20 KM2864AH KM2864AH-20 KM2864AH-25 PDF

    2864 eeprom

    Abstract: DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT
    Text: DS1225Y 64k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		DS1225Y 28-pin 24-Pin 720URE DS1225Y-150 DS1225Y-150+ DS1225Y-150IND DS1225Y-150IND+ DS1225Y-170 DS1225Y-170+ 2864 eeprom DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT PDF

    2864 EEPROM 28 PINS

    Abstract: EEPROM 2864 Ram 2864 SCSR 118 2864 eeprom mc68hc11a EEPROM 27128 5Bp cms 8D0C D803
    Text: Order this document by AN1010/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1010 MC68HC11 EEPROM Programming from a Personal Computer This application note describes a simple and reliable method of programming either the MC68HC11's internal EEPROM, or EEPROM connected to the M C U's external


    OCR Scan     		AN1010/D AN1010 MC68HC11 RS232 A23405 2864 EEPROM 28 PINS EEPROM 2864 Ram 2864 SCSR 118 2864 eeprom mc68hc11a EEPROM 27128 5Bp cms 8D0C D803 PDF

    DDR3-1066

    Abstract: DDR3-1333 X1620
    Text: 240pin DDR3 SDRAM Unbuffered DIMMs DDR3 SDRAM Unbuffered DIMMs Based on 2Gb M version HMT351U6MFR8C HMT351U7MFR8C * Contents are subject to change without prior notice. Rev. 0.3 / Jan 2009 1 HMT351U6MFR8C HMT351U7MFR8C Revision History Revision No. History


    Original     		240pin HMT351U6MFR8C HMT351U7MFR8C 512Mx72 DDR3-1066 DDR3-1333 X1620 PDF

    2864 eeprom

    Abstract: 2764 eprom DS1225Y Ram 2864 DS1225Y-150 DS1225Y-170 DS1225Y-200 2764 eprom PINOUT 2864 ram
    Text: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		DS1225Y 28-pin 100pF DS1225Y 28-PIN, 720-MIL 28-PIN 2864 eeprom 2764 eprom Ram 2864 DS1225Y-150 DS1225Y-170 DS1225Y-200 2764 eprom PINOUT 2864 ram PDF

    DS1225Y

    Abstract: DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY
    Text: 6 0 DS1225Y DALLAS SEMICONDUCTOR 64K Nonvolatile SRAM PIN ASSIGNMENT • Directly replaces 8K x 8 volatile static RAM or EEPROM . NC 1 1 28 1 VCC À12 | 2 27 1 WE A7 0 • Data is automatically protected during power loss CO • Data retention in the absence of Vcc


    OCR Scan     		DS1225Y 28-pin 228-PIN 28-PIN DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY PDF

    DS1225Y

    Abstract: eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864
    Text: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		DS1225Y 28-pin 100pF DS1225Y 28-PIN, 720-MIL 28-PIN eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864 PDF

    DS1225Y-200

    Abstract: DS1225Y-200IND DS1225Y DS1225Y-150IND DS1225Y-150 DS1225Y-170 ds1225
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		DS1225Y 28-pin 150ns 170ns 200ns DS1225Y-200 DS1225Y-200IND DS1225Y DS1225Y-150IND DS1225Y-150 DS1225Y-170 ds1225 PDF

    DS1225Y

    Abstract: DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		DS1225Y 28-pin 150ns 170ns 200ns DS1225Y DS1225Y-150 DS1225Y-200 DS1225Y-150IND DS1225Y-170 DS1225Y-200IND CI EEPROM 2864 EEPROM 2864 PDF

    2764 eprom PINOUT

    Abstract: dallas ds1225y DS1225Y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full +10% operating range A0 10 19


    Original     		DS1225Y DS1225Y 28-PIN 28-PIN 2764 eprom PINOUT dallas ds1225y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200 PDF

    EEPROM 2864

    Abstract: DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND mdt28 EEPROM 2864 CMOS 2864 eeprom
    Text: 19-5603; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power


    Original     		DS1225Y 28-pin MDT28 EEPROM 2864 DS1225Y 8k eprom 2764 DS1225Y-150 DS1225Y150IND EEPROM 2864 CMOS 2864 eeprom PDF

    DS1225Y

    Abstract: No abstract text available
    Text: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		DS1225Y 28-pin 24-Pin 720-mil A0-A12 150ns 170ns PDF

    DS1225AD-70

    Abstract: DS1225AD-85 ICC01 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-200
    Text: DS1225AB/AD 64k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM


    Original     		DS1225AB/AD 28-pin DS1225AD) DS1225AB) 150ns 200ns DS1225AD-70 DS1225AD-85 ICC01 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-200 PDF

    IC 2864 eeprom

    Abstract: dallas ds 1225y dallas ds1225y ic 2864 eprom DS1225Y
    Text: DS1225Y DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V c c NC 1 •-J VCC ro 1 A7 | 3 26 | NC A12 • Directly replaces 8K x 8 volatile static RAM or EEPROM 28 1 • I • Data is automatically protected during power loss


    OCR Scan     		DS1225Y 28-pin Vcc11. DS1225Y IC 2864 eeprom dallas ds 1225y dallas ds1225y ic 2864 eprom PDF

    xicor 28C64

    Abstract: X28C64 28C64 EEPROM A30A eeprom 28c65 MBM28C65-35 MSM28C64A-20 X28C64-20 X28C64-25 X28C64-35
    Text: - 2 X A m ¡âÆEffl £ tt « CC « TAAC •ax ns) TCAC max (ns) TOH «ax (ns) TOE max (ns) TOD max (ns) VDD (V) 8 C 6 4 U (i*A) VIL max (V) m -n /m ~h A I DD/STANDBY VIH tin (V) Ci max (pF) V O L / I VOL max (V/mA) n i VOH/IVOH min (V/mA) Co tax (pF) 80


    OCR Scan     		MBM28C65-35 MSH28C84A-15 MSM28C64A-20 X28C64 X28C64-20 X28C64-25 XI-70 20/fl. UPD28C64C-20 uPD28C64C-25 xicor 28C64 28C64 EEPROM A30A eeprom 28c65 X28C64-35 PDF

    2764 eprom

    Abstract: No abstract text available
    Text: 19-5625; Rev 11/10 DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •          PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		DS1225AB/AD 28-pin DS1225AD) DS1225AB) 27may MDT28 DS1225AB/AD 2764 eprom PDF

    DS1220AB-85

    Abstract: DS1220AD-85 DS1225 DS1225AB DS1225AB-70 DS1225AD ICC01 2764 EPROM EEPROM 2864 ram DS1225
    Text: DS1225AB/AD 64k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		DS1225AB/AD 28-pin DS1225AD) DS1225AB) DS1225AB/AD 28-PIN, 720-MIL 28-PIN DS1220AB-85 DS1220AD-85 DS1225 DS1225AB DS1225AB-70 DS1225AD ICC01 2764 EPROM EEPROM 2864 ram DS1225 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-5625; Rev 11/10 DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •          PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		DS1225AB/AD 28-pin DS1225AD) DS1225AB) MDT28 PDF

    am2664be

    Abstract: rvb ah
    Text: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write


    OCR Scan     		Am2864BE 32-byte 10-year Am2664BE 536-bit WF025172 rvb ah PDF

    DS1225AB

    Abstract: DS1225AB-70 DS1225AD DS1225AD-70 DS1225 ICC01
    Text: 19-5625; Rev 11/10 DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES • •          PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		DS1225AB/AD 28-pin DS1225AD) DS1225AB) MDT28 DS1225AB DS1225AB-70 DS1225AD DS1225AD-70 DS1225 ICC01 PDF

    DS1225Y

    Abstract: DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200
    Text: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full ±10% operating range A0 10 19


    Original     		DS1225Y DS1225Y DS1225 DS1225Y-150 DS1225Y-170 DS1225Y-200 PDF

    DS1225

    Abstract: DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-85 ICC01 EEPROM 2864 DS1225A
    Text: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		DS1225AB/AD 28-pin DS1225AD) DS1225AB) DS1225AB/AD 28-PIN, 720-MIL 28-PIN DS1225 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-85 ICC01 EEPROM 2864 DS1225A PDF

    DS1225AD-200

    Abstract: DS1225 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-85 ICC01
    Text: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		DS1225AB/AD 28-pin DS1225AD) DS1225AB) DS1225AB/AD 28-PIN, 720-MIL 28-PIN DS1225AD-200 DS1225 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-85 ICC01 PDF

    EEPROM 2864 CMOS

    Abstract: No abstract text available
    Text: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


    Original     		DS1225AB/AD 28-pin DS1225AD) DS1225AB) 150ns 200ns EEPROM 2864 CMOS PDF