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    CIRCUITS OF IRF150 Search Results

    CIRCUITS OF IRF150 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd

    CIRCUITS OF IRF150 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF150

    Abstract: IRF150 MOSFET MOSFET IRF150 IRF-150
    Text: IRF150, IRF151, IRF152, IRF153 HARRIS S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    IRF150, IRF151, IRF152, IRF153 TA17421. RF152, IRF150 IRF150 MOSFET MOSFET IRF150 IRF-150 PDF

    TRANSISTORS 132 GD

    Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
    Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    IRF150, IRF151, IRF152, IRF153 TA17421. RF152, RF153 TRANSISTORS 132 GD IRF150 kiv-8 IRF151 circuits of IRF150 PDF

    IRF150

    Abstract: MOSFET IRF150 12V 40A voltage regulators IRF152
    Text: IRF150, IRF151, IRF152, IRF153 S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    IRF150, IRF151, IRF152, IRF153 TA17421. IRF150 MOSFET IRF150 12V 40A voltage regulators IRF152 PDF

    irf150

    Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
    Text: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


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    IRF150 TA17421. irf150 MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150 PDF

    IRF 543 MOSFET

    Abstract: irf150 MOSFET IRF150 circuits of IRF150 JANTX2N6764 JANTXV2N6764 90337G
    Text: PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International


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    90337G IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) --TO-204AE IRF 543 MOSFET irf150 MOSFET IRF150 circuits of IRF150 JANTX2N6764 JANTXV2N6764 90337G PDF

    IRF150

    Abstract: circuits of IRF150
    Text: PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International


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    90337G IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) O-204AE IRF150 circuits of IRF150 PDF

    circuits of IRF150

    Abstract: MOSFET IRF150 IRF 543 MOSFET irf150 JANTX2N6764 JANTXV2N6764
    Text: PD - 90337F IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International


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    90337F IRF150 JANTX2N6764 JANTXV2N6764 MIL-PRF-19500/543] O-204AA/AE) parallelin52-7105 circuits of IRF150 MOSFET IRF150 IRF 543 MOSFET irf150 JANTX2N6764 JANTXV2N6764 PDF

    circuits of IRF150

    Abstract: IRF150-152
    Text: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*


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    IBM50/151/152/153 IRF150R/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R, IRF153R circuits of IRF150 IRF150-152 PDF

    IRF150

    Abstract: R01E MOSFET IRF150 7S001 IRF151 IRF152 IRF153 IRF162 IRF160
    Text: OÏ 3875081 D Ë J 3075001 UG1Û27M 5 | “~ G E SOLID ST A TE _ 01E - — -File Number 18274 . , D Standard Power MOSFETs IRF150, IRF151, |RF152, IRF153


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    7S001 IRF150, IRF151, RF152, IRF153 IRF152 IRF153 IRF150 R01E MOSFET IRF150 IRF151 IRF162 IRF160 PDF

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    IRF460 in TO220

    Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
    Text: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of


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    T0-240AA IRF460 in TO220 IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL PDF

    ECG transistor replacement guide book free

    Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
    Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a


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    UG-309 UG-201 UG-349 UG-1034 UG-146 UG-83 UG-318 UG-273 UG-255 ECG transistor replacement guide book free ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    PA 0016 PIONEER

    Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
    Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete


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    J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    IRF9150

    Abstract: IRF9151 IRF150 SCVIRFP9150CF1 MOSFET IRF150
    Text: Rugged Power MOSFETs File Num ber IRF9150, IRF9151 2280 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors 25 A, 60 V and 100 V P-CHANNEL ENHANCEMENT MODE fDS on = 0 .1 5 0 Q Features: • SOA is pow er-dissipation lim ite d


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    IRF9150, IRF9151 IRF9150 IRF9151 IRF150 SCVIRFP9150CF1 MOSFET IRF150 PDF

    IRFP9150

    Abstract: MOSFET IRF150 DILm 150 IRFP9151 IRFP 439 IRFP P CHANNEL IRF150 P-CHANNEL 25A TO-247 POWER MOSFET W-25A LD12-5A
    Text: Rugged Power MOSFETs IRFP9150, IRFP9151 File No. 2293 Power MOS Field -Effect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors P-CHANNEL ENHANCEMENT MODE 25 A, 60 V and 100 V fD S Io n l = 0 .1 5 0 Q D Features: • SOA is pow er-dissipation lim ited


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    IRFP9150, IRFP9151 92cs-43262 IRFP9150 IRFP9151 92GS-44S1S POWWF9150CF2 MOSFET IRF150 DILm 150 IRFP 439 IRFP P CHANNEL IRF150 P-CHANNEL 25A TO-247 POWER MOSFET W-25A LD12-5A PDF

    IRF 850 mosfet

    Abstract: 9150C
    Text: 2 3 H A R R IRF9150 IRF9151 I S Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 4 A E BOTTOM VIEW • -25A , -8 0 V and -1 0 0 V • r D S 0 N = 0.1 s o n DRAIN (FLANGE) SOURCE • Single Pulse Avalanche Energy Rated


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    IRF9150 IRF9151 IRF9151 HESIRF9t50CFI RF9250CF1 IHF9I50CF2 IRF 850 mosfet 9150C PDF

    SGS M114S

    Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
    Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.


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    PDF

    IRF150R

    Abstract: IRF151R IRF152R IRF153R
    Text: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


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    IRF150R, IRF151R, IRF152R, IRF153R 0V-100V 92cs-42c9s IRF152R IRF153R IRF150R IRF151R PDF

    2N6657

    Abstract: 2N6658 VN66AF VN67AA 2N6656 VN64GA VN88AF VN-99-A 2N6657 siliconix IRF120
    Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35


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    IRF150 IRF152 IRF140 IRF142 VN1000A IRF130 VN1001A IRF132 IRF120 IRF122 2N6657 2N6658 VN66AF VN67AA 2N6656 VN64GA VN88AF VN-99-A 2N6657 siliconix IRF120 PDF

    TC 9151 P

    Abstract: IRFP9151
    Text: IR F P 9150 IR F P 9151 S ì H A R R IS Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package Features T O -2 4 7 • -2 5 A , -8 0 V and -1 0 0 V TOP VIEW • rD S 0 N = 0 .1 5 0 H • Single Pulse Avalanche Energy Rated SOURCE • S O A is P o w er-D issip atio n Lim ited


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    IRFP9151 92GS-44216 92CS-43323 IAF9150CF2 TC 9151 P PDF

    2N6657 data sheet

    Abstract: 2N6657 2N6658 sony 2sj54 IRF540 VN64GA irf740 pinout 2N6656 8G6 data sheet BUZ44
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100


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    O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 2N6657 data sheet 2N6657 2N6658 sony 2sj54 VN64GA irf740 pinout 2N6656 8G6 data sheet BUZ44 PDF

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


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    IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX PDF