4431 8 PIN
Abstract: 2N4430 2N4429 2N4431 2NS4429 to-117a
Text: li _n_Mm ra. m 140 Commerce Drive m lC rU S & n il Jet: Montgomeryvilie, PA 18936 215 631-9840 2N4429 -> 4431 s P&msfsxf ò y TaeR rtoissy RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES HIGH POWER GAIN 2N4431
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2N4429
2N4431
2N4430
2NS4429
O-117A
1000MHz,
--300mW
75rnW
2N4431
4431 8 PIN
2N4430
2NS4429
to-117a
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PDF
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2164 20 pin
Abstract: v 2164 m
Text: ANALOG ► DEVICES Low Cost Quad Voltage Controlled Amplifier SSM2164 FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain M atching U nity Gain Class A or AB Operation FUNCTIONAL BLOCK DIAGRAM
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SSM2164
16-Pin
R-16A)
2164 20 pin
v 2164 m
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PDF
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2SD1990
Abstract: IC003
Text: 2SD1990 Power Transistors 2SD1990 Silicon NPN Triple-Diffused Planar Type Power Switching Package Dimensions U n it ! m m • Features • High speed switching • Good linearity of DC current gain I ì f e • Large collector power dissipation (Pc) ,10.5 + 0.5
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2SD1990
O-220
bT32052
2SD1990
IC003
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PDF
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2N5590
Abstract: 2n5591 2N559 2N5589 SD1216 transistor 2N5589 SD1214 2n558 2N556 M135
Text: Microsemi P rog resa P o w e re d b y T ech no log y Montgomeryville, PA 18936 Tel: 215 631-9840 2N5589 2N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.230MHZ FM MOBILE APPLICATIONS FREQUENCY 175MHz VOLTAGE 13.6 V POWER OUT 8 TO 25W HIGH POWER GAIN HIGH EFFICIENCY
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2N5589
2N5590/2N5591
230MHz
175MHz
SD1212-02
SD1214-12
2N5590
SD1216
2N5591
2N5590
2n5591
2N559
2N5589
transistor 2N5589
SD1214
2n558
2N556
M135
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PDF
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching
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2SB939,
2SB939A
2SD1262,
2SD1262A
2SB939
2SB939A
2SD1262
2SD1262A
high current Darlington pair IC
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PDF
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IN4007 diode
Abstract: IN4007 RECTIFIER DIODE thyristor firing circuit IN4007 bridge rectifier ic dual thyristor Multivibrator scr pulse battery charger schematic preamp with bass treble circuit diagrams DIODE IN4007 thyristor battery charger 24v thyristor firing circuits
Text: Harris Semiconductor No. AN6048.1 Harris Intelligent Power April 1994 SOME APPLICATIONS OF A PROGRAMMABLE POWER SWITCH/AMPLIFIER Authors: L.R. Campbell and H.A. Wittlinger Circuit Description The CA3094 unique monolithic programmable power switch/ amplifier IC consists of a high-gain preamplifier driving a
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AN6048
CA3094
CA3094,
CA3080
CA3080A,
CA3080A
AN6668.
AN6077.
IN4007 diode
IN4007 RECTIFIER DIODE
thyristor firing circuit
IN4007 bridge rectifier ic
dual thyristor Multivibrator
scr pulse battery charger schematic
preamp with bass treble circuit diagrams
DIODE IN4007
thyristor battery charger 24v
thyristor firing circuits
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PDF
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2SB1317
Abstract: 2SD1975
Text: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 1 9 7 5 Package Dim ensions • Features • V ery good linearity of DC cu rre n t gain hFE • Wide area of safety operation (ASO)
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2SB1317
2SD1975
20-5max.
2SB1317
2SD1975
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PDF
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2SD2000
Abstract: No abstract text available
Text: Power Transistors 2SD2000 2SD2000 Silicon NPN Triple-Diffused Planar Type Power Switching • Features • • • • High speed sw itching Good linearity of DC cu rren t gain I Large collector pow er dissipation (Pc) “Full P ack” package for simplified m ounting on a heat sink w ith one
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2SD2000
2SD2000
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PDF
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251C
Abstract: 2SB1156 2SD1707
Text: Power Transistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1707 U nit : ram 5 2 max. . 15.5max- • Features ' 6.9m in. "U.2 • Low collector-eim itter saturation voltage VcEisao • Good linearity of DC c u rre n t gain (hFE)
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2SB1156
2SD1707
-55-rent
VCC--50V
DGlb231
251C
2SB1156
2SD1707
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PDF
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2SB932
Abstract: 2SD1255
Text: Power Transistors 2SD1255 2SD1255 Silicon NPN Epitaxial Planar Type • Package D im ensions Power S w itching C om plem entary Pair w ith 2SB932 ■ Features • Low collector-emitter saturation voltage V cf mj • Good linearity of DC current gain (hn.)
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2SD1255
2SB932
2SD1253/A)
bT32652
2SB932
2SD1255
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PDF
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Untitled
Abstract: No abstract text available
Text: 2S B 16 39 Transistors 2 S D 2 3 1 8 / 2 S D 19 44 High-current gain Power Transistor —60V, —3A 2SB1639 I • A b so lu te maximum ratings ( T a = 2 5 t) • F ea tu res 1 ) H ig h D C c u rre n t g a in . (T y p .4 4 0 a t V c e / I c = — 4 V / - •0 .5 A )
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2SB1639
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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2SA1501
Abstract: POWER TRANSISTORS 10A 400v pnp
Text: Power Transistors 2SA1501 2SA1501 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching • Features • High speed sw itching • High collector-base voltage VCbo • Wide area of safety operation (ASO) • Good linearity of DC cu rre n t gain
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2SA1501
Px-10Vx
b13EflS2
0Dlbl37
2SA1501
POWER TRANSISTORS 10A 400v pnp
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PDF
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2SA914
Abstract: 2SC1953
Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC cu rre n t gain • High collector-em itter voltage V (Iife ceo ) • Low collector output capacitance (Cot)
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2SA914
2SC1953
O-126
100MHi
2SA914
2SC1953
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PDF
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2SD2156
Abstract: 2SD215 2SD2156A
Text: Power Transistors 2SD215Ó, 2SD2156A 2SD2156, 2SD2156A Silicon NPN Triple-Diffused Planar Type High DC Current Gain • Features Package Dimensions Power Amplifier h FE , • High DC c u rre n t gain (Iife) (Iife ) • “Full Pack” package for simplified m ounting on a heat sink with one
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2SD215Ã
2SD2156A
2SD2156,
2SD2156
2SD215
2SD2156A
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1254 2SD1254 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB931 ■ Features • Low collector-em itter saturation voltage • Good linearity of DC current gain V ce isa o (I i f e )
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2SD1254
2SB931
G01bb3b
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PDF
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2SA1635
Abstract: 2SC4008 SC-75A
Text: 2SA1635 2SC4008 Transistors Power Transistor —80V, —4A I 2SA1635 •F e a tu re s #A bsolute maximum ratings ( T a = 2 5 t ) 1 ) Low VcE(sai). (Typ. — 0 . 3 V at Ic / I b = — 2 /—0.2A) 2 ) Excellent DC current gain characteristics. 3 ) Pc = 3 0 W ( T c = 2 5 ‘C )
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2SA1635
2SC4008
2SA1635
2SC4008.
O-220FP
O-220
O-126
O-220,
SC-75A
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD2142K / 2SC2062S 2SD2470 Transistors High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S I •F e a tu re s 1 ) Darlington connection for a high Fif e . (Min. 5000 atVcE/lc~3V/0.1A) 2 ) High input impedance. •A b s o lu te maximum ratings (Ta—2 5 t )
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2SD2142K
2SC2062S
2SD2470
2SD2142K
2062S
0Dlb713
O-220FN
O-220FN
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PDF
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LT32B
Abstract: 2SB1176 2SD1746
Text: 2SD 17 4 6 Power Transistors 2SD1746 Silicon N P N Epitaxial Planar Type Package Dim ensions Power Switching C om plem entary Pair with 2 S B 1 1 7 6 Unit ! mm • Features • Low collector-em itter saturation voltage V ce<&jo • High DC current gain (hFE) and good linearity
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2SD1746
10MHz
T32B5E
2SD1747/A)
lbfl40
LT32B
2SB1176
2SD1746
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PDF
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44max
Abstract: 2SA1535A 2SA1535 2SC3944 2SC3944A b13E
Text: Power Transistors 2SA1535, 2SA1535A 2SA1535, 2SA1535A Silicon P N P Epitaxial Planar Type Package Dimensions AF Drivers, High Powre Amplifiers Complementary Pair with 2SC 3944, 2SC 3944A Unit I mm 4.4max, 10.2max. • Features *-H 2.9m ax. • V ery good linearity of DC c u rre n t gain
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2SA1535,
2SA1535A
2SC3944,
2SC3944A
2SA1535
44max
2SA1535A
2SC3944
2SC3944A
b13E
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PDF
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2SD1510
Abstract: 743p 44max
Text: Power Transistors 2SD1510 2SD1510 Silicon PNP Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier U n it r m m 4 .4 m a x . • Features • High DC cu rren t gain hra 2.9max • High speed switching • “Full P ack” package for simplified m ounting on a h eat sink with one
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2SD1510
0Dlb74S
2SD1510
743p
44max
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PDF
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Untitled
Abstract: No abstract text available
Text: SD1075 RF & MICROWAVE TRANSISTORS UHF TV\LINEAR APPLICATIONS Features • • • • • • • 130 - 400 MHz 28 VOLTS POUT = 10 WATTS GP = 4.0 dB MINIMUM HIGH POWER GAIN HIGH EFFICIENCY COMMON EMITTER CONFIGURATION DESCRIPTION: This line of silicon epitaxial NPN planar high frequency
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SD1075
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2SD1640
Abstract: hl planar
Text: Power Transistors 2SD1640 2SD1640 Silicon NP.N Epitaxial Planar Darlington Type Package D im ensions AF O utput A m plifier U n it • m m S0*¡ • Features 5 2+0 2 • Darlington connection • High DC cu rren t gain hn. • High collector cu rren t (Ic)
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2SD1640
O-12S
hl planar
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PDF
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B1326
Abstract: 2SB1175 2SD1745
Text: Power Transistors 2SB1175 2SB1175 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1745 •Features U n it : mm 3.7max. 7.3max. • Low collector-eim itter saturation voltage Vce<,.o 3.2m ax. £L • Good linearity of DC c u rre n t gain (hFE)
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2SB1175
2SD1745
2SB1173/A)
b132652
B1326
2SD1745
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PDF
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2SB1170
Abstract: 2SD1751
Text: Power Transistors 2SD1751 2SD1751 Silicon NPN Triple-Diffused Planar Darlington Type • Package Dimensions Power Amplifier Complementary Pair with 2SB1170 ■ Features • High DC cu rre n t gain hn; and good linearity • Low collector-em itter saturation voltage (VcEisati)
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2SD1751
2SB1170
2SB1170
2SD1751
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PDF
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