ST1305B
Abstract: 064d
Text: ST1305B High Endurance CMOS 192 bit EEPROM With Secure Logic Access Control BRIEF DATA • Memory Divided Into: 2 Programming Time: 5 ms 2 ■ Figure 1. Delivery Forms 2 Single 5 V Supply Voltage 2 ■ – 16 bits of Circuit Identification – 48 bits of Card Identification
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ST1305B
AI02468
ST1305B
AI02467
064d
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micromodule
Abstract: ST1305 DS0501 DS-0501
Text: ST1305 High Endurance CMOS 192 bit EEPROM With Secure Logic Access Control BRIEF DATA • Single 5 V Supply Voltage ■ Programming Time: 5 ms ■ Memory Divided Into: Figure 1. Delivery Forms – 16 bits of Circuit Identification – 48 bits of Card Identification
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ST1305
DS0502
ST1305
DS0501
micromodule
DS0501
DS-0501
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ST1305
Abstract: No abstract text available
Text: ST1305 High Endurance CMOS 192 bit EEPROM With Secure Logic Access Control BRIEF DATA • Single 5 V Supply Voltage ■ Programming Time: 5 ms ■ Memory Divided Into: Figure 1. Delivery Forms – 16 bits of Circuit Identification – 48 bits of Card Identification
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ST1305
AI02448
ST1305
AI02447
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SR02345
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA8027 2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer Product data Supersedes data of 2001 Mar 21 Philips Semiconductors 2001 Jul 18 Philips Semiconductors Product data 2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer
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SA8027
SA8027
SR02345
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power rf
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA8027 2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer Product specification Supersedes data of 2000 Nov 29 Philips Semiconductors 2001 Mar 21 Philips Semiconductors Product specification 2.5 GHz low voltage, low power
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SA8027
SA8027
power rf
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SA8027
Abstract: SA8027DH SA8027W SR00602
Text: INTEGRATED CIRCUITS SA8027 2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer Product data Supersedes data of 2001 Jul 18 Philips Semiconductors 2001 Aug 21 Philips Semiconductors Product data 2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer
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SA8027
SA8027
SA8027DH
SA8027W
SR00602
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12v spst reed DIL relay
Abstract: mk06u DIL 14 pin reed relay spst reed DIL relay SMD transistor M05 float level sensor magnetic bistable switch catalog 12V SPST DIL Reed Relay 8 pin hct595 dil reed relay
Text: SHORTFORM CATALOG Reed Relays • Reed Sensors · Reed Switches www.meder.com SELECTION GUIDE MEDER electronic How to Use This Selection Guide Vision Statement The information provided within this Short Form Catalog gives a general overview of MEDER electronic‘s Standard
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SR01800
Abstract: SA7026 SA7026DH SR00602
Text: INTEGRATED CIRCUITS SA7026 1.3GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1999 Apr 16 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 1.3GHz low voltage fractional-N dual synthesizer
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SA7026
SA7026
SR01800
SA7026DH
SR00602
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SA8026
Abstract: SA8026DH SR00602
Text: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1999 Mar 08 Philips Semiconductors 1999 Apr 16 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency
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SA8026
SA8026
SA8026DH
SR00602
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1998 Feb 08 Philips Semiconductors 1999 Mar 08 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency
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SA8026
SA8026
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1998 Oct 16 Philips Semiconductors 1999 Feb 08 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency
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SA8026
SA8026
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GSM "Frequency Synthesizers"
Abstract: SA8028 phase detector in RTL Programmable Divider IS136 SA8028W SR00602
Text: INTEGRATED CIRCUITS SA8028 2.5 GHz sigma delta fractional-N / 760 MHz IF integer frequency synthesizers Product data Supersedes data of 2002 Jan 09 File under Integrated Circuits — IC17 Philips Semiconductors 2002 Feb 22 Philips Semiconductors Product data
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SA8028
GSM "Frequency Synthesizers"
SA8028
phase detector in RTL
Programmable Divider
IS136
SA8028W
SR00602
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SA8028
Abstract: SA8028W Programmable Divider IS136 SR00602
Text: 34 .80 7IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of NXP have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - Philips Semiconductors is replaced with ST-NXP Wireless.
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SA8028
Abstract: SA8028W GSM "Frequency Synthesizers" IS136 SR00602
Text: INTEGRATED CIRCUITS SA8028 2.5 GHz sigma delta fractional-N / 760 MHz IF integer frequency synthesizers Product data Supersedes data of 2002 Jan 09 File under Integrated Circuits — IC17 Philips Semiconductors 2002 Feb 22 Philips Semiconductors Product data
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SA8028
SA8028
SA8028W
GSM "Frequency Synthesizers"
IS136
SR00602
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SA8026DH
Abstract: SA8026 SR00602
Text: INTEGRATED CIRCUITS SA8026 2.5GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1999 Apr 16 Philips Semiconductors 1999 Nov 04 Philips Semiconductors Product specification 2.5GHz low voltage fractional-N dual frequency
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SA8026
SA8026
SA8026DH
SR00602
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27c160
Abstract: No abstract text available
Text: rZ 7 SGS-THOMSON RfflD g[^@ll[L[i(glT^ ia(gS M27C160 CMOS 16 Megabit (2M x 8 or 1M x 16 UV EPROM ADVANCE DATA • FAST ACCESS TIME: 150ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit, 42 Pin, MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70mA at 8MHz
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M27C160
150ns
10sec.
M27C160
27C160
FDIP42W
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27C160
Abstract: No abstract text available
Text: r i7 S G S -TH O M S O N M27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ADVANCE DATA • FAST ACC ESS TIME: 150ns ■ W O RD-W IDE or BYTE-W IDE CONFIGURABLE ■ 16 Megabit, 42 Pin, MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70m A at 8MHz
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M27C160
150ns
10sec.
M27C160
27C160
FDIP42W
27C160
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M27C
Abstract: 27C160 M27C16
Text: 52E J> m TTETSa? 0037bbb TflO • SGTH T~%~I3 - 2 e? S G S - 1H O M S O N S fi S - T H O M S O N L iM M Q § M 27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ADVANCE DATA FAST ACCESS TIME: 150ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit, 42 Pin, MASK ROM COMPATIBLE
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0037bbb
27C160
150ns
10sec.
M27C160
FDIP42W
M27C
M27C16
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M27C
Abstract: No abstract text available
Text: Æ T SGS-THOMSON M27C160 * 7 1 . M O » iIL iO T [iM CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM A D VA N CE DATA FAST ACCESS TIME: 150ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit, 42 Pin, MASK ROM COMPATIBLE LOW POWER CONSUMPTION - Active Current 70mA at 8MHz
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M27C160
150ns
10sec.
M27C160
IP42W
M27C
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ez738
Abstract: MQ4 circuit diagram Z3A16 M27C800
Text: r s 7 SG S-TH O M SO N M27C800 KiilQ g[B3 iILI MI(S R!10(gS 8 Megabit (1 Meg x 8 or 512K x 16) UV EPROM and OTP ROM PRODUCT PREVIEW • FAST ACCESS TIME - 100ns (Random Address) - WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 8 Megabit MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION
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M27C800
100ns
FDIP42W
FDIP42W
M27C800
712T237
Qbfl63cl
ez738
MQ4 circuit diagram
Z3A16
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M27C800 H Q ^ © [llL I@ T O M O (g 8 Megabit (1 Meg x 8 or 512K x 16 UV EPROM and OTP ROM PRODUCT PREVIEW Figure 1. Logic Diagram < o o DESCRIPTION The M27C800 is an 8 Megabit UV erasable and programmable memory (EPROM) ideally suited for
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M27C800
M27C800
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Untitled
Abstract: No abstract text available
Text: S G S -1 H 0 M S 0 N RfflQ @HLIiOT®RD[l©i M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP ROM • FAST ACCESS TIME - 100ns (Random Address) ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION
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M27C160
100ns
70mAat
50sec.
FDIP42W
FDIP42W
M27C160
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M27C160
Abstract: ZJA16
Text: SGS-THOMSON Kiöa Mi[LllOT o K!]ö©S M27C160 16 Megabit (2Meg x 8 or 1Meg x 16) UV EPROM and OTP ROM • FAST ACCESS TIME - 100ns (Random Address) ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70mA at 8MHz
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M27C160
100ns
50sec.
FDIP42W
M27C160
7T2T237
00bfl4cn
ZJA16
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12V fluo
Abstract: No abstract text available
Text: / = T S C S -T H O M S O N * 7 # m m iiijw û im s M27C64A CMOS 64K 8K x 8 UV EPROM • VERY FAST ACCESS TIME: 150ns ■ COMPATIBLE with HIGH SPEED MICROPRO CESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA
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M27C64A
150ns
M27C64A
FDIP28W
12V fluo
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