SL 2042
Abstract: CL 2181 27570 TR-2207 PHSOSCK17 STD150 TF011 CL118 CL 0805 samsung 1622
Text: INPUT CLOCK DRIVERS Cell List Cell Name Function Description PMSCKDC 2/4/6/8 2.5V CMOS Level Input Clock Driver PMSCKDCD(2/4/6/8) 2.5V CMOS Level Input Clock Driver with Pull-Down PMSCKDCU(2/4/6/8) 2.5V CMOS Level Input Clock Driver with Pull-Up PMSCKDS(2/4/6/8)
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STD150
SL 2042
CL 2181
27570
TR-2207
PHSOSCK17
STD150
TF011
CL118
CL 0805
samsung 1622
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application notes of TF 513
Abstract: PHSOSCK17 PHSOSCK27 STD130
Text: INPUT CLOCK DRIVERS Cell List Cell Name Function Description PSCKDC 2/4/6/8 1.8V CMOS Level Input Clock Driver PSCKDCD(2/4/6/8) 1.8V CMOS Level Input Clock Driver with Pull-Down PSCKDCU(2/4/6/8) 1.8V CMOS Level Input Clock Driver with Pull-Up PSCKDS(2/4/6/8)
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STD130
application notes of TF 513
PHSOSCK17
PHSOSCK27
STD130
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CL 2181
Abstract: SL 1088 PHSOSCK17 PHSOSCK27
Text: INPUT CLOCK DRIVERS Cell List Cell Name Function Description PSCKDC 2/4/6/8 1.8V CMOS Level Input Clock Driver PSCKDCD(2/4/6/8) 1.8V CMOS Level Input Clock Driver with Pull-Down PSCKDCU(2/4/6/8) 1.8V CMOS Level Input Clock Driver with Pull-Up PSCKDS(2/4/6/8)
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STD131
CL 2181
SL 1088
PHSOSCK17
PHSOSCK27
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CL1101
Abstract: CL1502 610 108 001 PHSOSCK17/M16/M26/M36 SL 100 power transistor sl 100 transistor YN 2 SL 220 CL117 CL166 PHSOSCK17
Text: INPUT CLOCK DRIVERS Cell List Cell Name Function Description PMSCKDC 2/4/6/8 2.5V CMOS Level Input Clock Driver PMSCKDCD(2/4/6/8) 2.5V CMOS Level Input Clock Driver with Pull-Down PMSCKDCU(2/4/6/8) 2.5V CMOS Level Input Clock Driver with Pull-Up PMSCKDS(2/4/6/8)
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STDH150
CL1101
CL1502
610 108 001
PHSOSCK17/M16/M26/M36
SL 100 power transistor
sl 100 transistor
YN 2 SL 220
CL117
CL166
PHSOSCK17
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CDP1878C
Abstract: CDP1800 CDP1800-SERIES CDP1802 CDP1802A CDP1878CD CDP1878CE tda 4100
Text: [ /Title CDP1 878C /Subject (CMO S Dual Counte Timer) /Autho r () /Keywords (CMO S Dual Counte Timer, CMOS Dual Counte Timer, Intersil Corporation, 8-bit microprocessors, 8 bit microprocessors, peripherals) /Cre- CDP1878C CMOS Dual Counter-Timer March 1997
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CDP1878C
CDP1800
CDP1878C
16bit
CDP1800
CDP1800-SERIES
CDP1802
CDP1802A
CDP1878CD
CDP1878CE
tda 4100
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CD74FCT648ATQM
Abstract: CD74FCT2646T CD74FCT2652T CD74FCT646ATM CD74FCT646ATQM CD74FCT646CTM CD74FCT646CTQM CD74FCT646DTM CD74FCT646T CD74FCT648T
Text: S E M I C O N D U C T O R December 1996 CD74FCT646T, CD74FCT648T, CD74FCT651T, CD74FCT652T, CD74FCT2646T, CD74FCT2652T Fast CMOS Octal Registered Transceivers Features Ordering Information • Advanced 0.8 micron CMOS Technology PART NUMBER TEMP. RANGE oC
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CD74FCT646T,
CD74FCT648T,
CD74FCT651T,
CD74FCT652T,
CD74FCT2646T,
CD74FCT2652T
CD74FCT646ATM
CD74FCT646ATQM
CD74FCT646CTM
CD74FCT646CTQM
CD74FCT648ATQM
CD74FCT2646T
CD74FCT2652T
CD74FCT646ATM
CD74FCT646ATQM
CD74FCT646CTM
CD74FCT646CTQM
CD74FCT646DTM
CD74FCT646T
CD74FCT648T
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AMI350XXPF
Abstract: No abstract text available
Text: 0.35 Micron CMOS Pad Library Datasheets AMI350XXPF 3.3/5.0 Volt Section 4 Revision 1.1 PAD LIBRARY Pad Selection Guide AMI350XXPF 0.35 micron CMOS Pad Library PAD SELECTION GUIDE Input Drive Pieces Description IDCIx IDCIC IDCIT IDCR0 IDCSx IDCSC IDCST IDCXx
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AMI350XXPF
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DIN527
Abstract: TH58NS100DC
Text: TH58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 1-GBIT 128M x 8 BITS CMOS NAND E PROM (128M BYTE SmartMedia ) DESCRIPTION The TH58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable
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TH58NS100DC
TH58NS100
528-byte
528-byte
DIN527
TH58NS100DC
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Untitled
Abstract: No abstract text available
Text: TH58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT 128M x 8 BITS CMOS NAND E PROM (128M BYTE SmartMedia TM ) DESCRIPTION The TH58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable
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TH58NS100DC
TH58NS100
528-byte
528-byte
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17344a
Abstract: 40-pin eproms datasheet G1229
Text: FINAL Am27X400 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS ExpressROM Device • ±10% power supply tolerance ■ High noise immunity ■ Low power dissipation — 100 µA maximum CMOS standby current ■ Available in Plastic Dual In-Line Package (PDIP)
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Am27X400
8-Bit/262
16-Bit)
KS000010
7344A-9
17344a
40-pin eproms datasheet
G1229
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PWM IC 16-PIN DIP
Abstract: UC3846 application TC28C46EOE TC170 TC18C46 TC18C46MJE TC28C46 TC28C46EPE TC38C46 TC38C46COE
Text: TC18C46 TC28C46 TC38C46 CMOS CURRENT MODE PWM CONTROLLER 2 FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The TC38C46 is a current mode CMOS PWM control IC. It draws only 2 mA supply current, so it can be driven
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TC18C46
TC28C46
TC38C46
TC38C46
300mA
TC170,
350mV
PWM IC 16-PIN DIP
UC3846 application
TC28C46EOE
TC170
TC18C46
TC18C46MJE
TC28C46
TC28C46EPE
TC38C46COE
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Untitled
Abstract: No abstract text available
Text: TH58NVG5S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT 4G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 16384 blocks.
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TH58NVG5S0FTA20
TH58NVG5S0F
4328-byte
2011-07-01C
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Untitled
Abstract: No abstract text available
Text: Semiconductor December 1996 CD74FCT646T, CD74FCT648T, CD74FCT651T, CD74FCT652T, CD74FCT2646T, CD74FCT2652T Fast CMOS Octal Registered Transceivers Ordering Information Features • Advanced 0.8 micron CMOS Technology PART NUM BER TEM P. RANGE °C PKG. NO.
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CD74FCT646T,
CD74FCT648T,
CD74FCT651T,
CD74FCT652T,
CD74FCT2646T,
CD74FCT2652T
CD74FCT646ATM
CD74FCT646ATQM
CD74FCT646CTM
CD74FCT646CTQM
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Untitled
Abstract: No abstract text available
Text: •elwom Semiconductor, Inc. T nftPdfi 1 TC28C46 TC38C46 CMOS CURRENT MODE PWM CONTROLLER FEATURES GENERAL DESCRIPTION ■ Isolated Output Drive ■ Low Power CMOS Construction ■ Low Supply Current.2mA Typ. ■ Wide Supply Voltage Operation. 8V to 18V
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TC28C46
TC38C46
500mA
50nsec
1000pF
500kHz
350mV
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM44C4103A/AL/ALL/ASL 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRA C tCAC tR C K M 44C 4103 A /Ä L /Ä L L /A S L -5 50n s 13ns 9 0 ns K M 44C 4 1 0 3 A / A L /A L L /A S L -6 60n s 15n s
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KM44C4103A/AL/ALL/ASL
comKM44C4103A/AL/ALL/ASL
28-LEAD
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rm 1100 powec
Abstract: op03 QFP80 TLCS-470 TMP47CE020G TMP47CE820F 31-0190 HTC lCD DISPLAY
Text: TO SH IBA TMP47CE820 UNDER DEVELOPMENT CMOS 4-BIT MICROCONTROLLER TMP47CE820F The 47CE820 is a high speed and high performance 4-bit single chip microcomputer based on the TLCS-470 CMOS series with E2PROM, LCD driver and high speed timer/counter. PART No.
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TMP47CE820
TMP47CE820F
47CE820
TLCS-470
TMP47CE820F
QFP80
TMP47CE020G
244ps
70Kil
rm 1100 powec
op03
QFP80
TMP47CE020G
31-0190
HTC lCD DISPLAY
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M5M51288
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51288BKP,KJ, VP-15,-20,-25, -20L.-25L _ 1048576-BITQ 31072-WQRD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51288BKP,KJ,VP are a family of 131072-word by 8 -bit static RAMs, fabricated with the high performance CMOS silicon
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M5M51288BKP
VP-15
1048576-BITQ
31072-WQRD
131072-word
32-pin
M5M51288
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY HY514400 HYUNDAI SEMICONDUCTOR 1 MX 4-Bit CMOS DRAM M1A1200A-MAY91 DESCRIPTION FEATURES The H Y 514400 is the new generation dyna mic RAM organized 1,048,576 words by 4 bits. The HY514400 utilizes HYUNDAI’S CMOS process technology as well as advanced circuit
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HY514400
M1A1200A-MAY91
HY514400
HY514400.
512KX8
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Untitled
Abstract: No abstract text available
Text: QSFCT245T, 640T, 2245T, 2640T Q High Speed CMOS 8-Bit Transceivers Q S54/74FCT245T Q S54/74FCT640T QS54/74FCT2245T QS54/74FCT2640T FEATURES/BENEFITS • Pin and function compatible to the 74F245/640 74FCT245/640 and 74FCT245T/640T • CMOS power levels: <7.5 mW static
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QSFCT245T,
2245T,
2640T
S54/74FCT245T
S54/74FCT640T
QS54/74FCT2245T
QS54/74FCT2640T
74F245/640
74FCT245/640
74FCT245T/640T
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4106 "pin compatible"
Abstract: a6910
Text: QSFCT245T, 640T, 2245T, 2640T Q High Speed CMOS / 8-Bit Transceivers / Q S54/74FCT245T qs54/74fct64ot _ Q S54/74FCT2245T Q S54/74FCT2640T FEATURES/BENEFITS • Pin and function compatible to the 74F245/640 74FCT245/640 and 74FCT245T/640T • CMOS power levels: <7.5 mW static
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QSFCT245T,
2245T,
2640T
S54/74FCT245T
qs54/74fct64ot
S54/74FCT2245T
S54/74FCT2640T
74F245/640
74FCT245/640
74FCT245T/640T
4106 "pin compatible"
a6910
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Untitled
Abstract: No abstract text available
Text: Am27X400 a Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262 144 x 16-Bit CMOS ExpressROM Device • ±10% power supply tolerance ■ High noise immunity _ Low power dissipation — 100 nA maximum CMOS standby current H Available in Plastic Dual In-Line Package (PDIP)
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Am27X400
8-Bit/262
16-Bit)
KS000010
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LM35N
Abstract: No abstract text available
Text: PERFORMANCE SEM ICO NDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times
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70b2517
P4C1981
/P4C1981L,
P4C1982/P4C1982L
l2/l5/20/25ns
20/25/35/45/55ns
P4C1981L/1982L
P4C1981/L
P4C1982/L
28-Pin
LM35N
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TMP47C434/634 CMOS 4-BIT MICROCONTROLLER TMP47C434N, TMP47C634N The 47C434/634 are based on the TLCS-470 CMOS series. The 47C434/634 have display on-screen circuit to display characters and marks which indicate channel or tim e on TV screen, A/D converter inpu t, and D/A
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TMP47C434/634
TMP47C434N,
TMP47C634N
47C434/634
TLCS-470
P47C434N
P47C634N
SD1P42
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1s34
Abstract: P4C198 P4C1981 P4C1981L P4C1982L
Text: PERFORMANCE SEMICONDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial)
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70b2S17
P4C1981
/P4C1981L,
P4C1982/P4C1982L
l2/l5/20/25ns
20/25/35/45/55ns
Active-12
P4C1981/82
P4C1981L/82L
P4C1981L/1982L
1s34
P4C198
P4C1981L
P4C1982L
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