Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CMOS AND GATE Search Results

    CMOS AND GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    CMOS AND GATE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    430413

    Abstract: 300K-600K CMOS-9 equivalent L302 sh micron aerospace
    Text: CMOS-9 3.3-VOLT, 0.35-MICRON CMOS GATE ARRAYS NEC Electronics Inc. July 1997 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required to develop devices for high-speed computer and


    Original
    35-MICRON 35-micron A12634EU1V0DS00 430413 300K-600K CMOS-9 equivalent L302 sh micron aerospace PDF

    and gate cmos

    Abstract: SOT-95 marking code po SOT
    Text: NL17SHT08 2-Input AND Gate / CMOS Logic Level Shifter The NL17SHT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    NL17SHT08 NL17SHT08/D and gate cmos SOT-95 marking code po SOT PDF

    MC74VHC1GT08DF2G

    Abstract: No abstract text available
    Text: MC74VHC1GT08 2−Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    MC74VHC1GT08 MC74VHC1GT08/D MC74VHC1GT08DF2G PDF

    TC74HC

    Abstract: TC7S08 TC7ST08F TC7ST08
    Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7ST08F/FU 2-Input AND Gate The TC7S08 is a high speed CMOS 2-Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


    Original
    TC7ST08F/FU TC7S08 TC74HC TC7ST08F TC7ST08 PDF

    Untitled

    Abstract: No abstract text available
    Text: NL17SHT08 2-Input AND Gate / CMOS Logic Level Shifter The NL17SHT08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    NL17SHT08 NL17SHT08 NL17SHT08/D PDF

    Untitled

    Abstract: No abstract text available
    Text: XC74UL04AA ETR1304_002 CMOS Logic GENERAL DESCRIPTION The XC74UL04AA is a CMOS inverter, manufactured using silicon gate CMOS fabrication. CMOS low power circuit operation makes high speed LS-TTL operation achievable. The internal circuit is composed of inverter and buffer, which provide high noise immunity and stable output.


    Original
    XC74UL04AA ETR1304 XC74UL04AA SSOT-25 SSOT-25, PDF

    SSOT-25

    Abstract: XC74UL04AAN XC74UL04AA
    Text: XC74UL04AA ETR1304_002 CMOS Logic •GENERAL DESCRIPTION The XC74UL04AA is a CMOS inverter, manufactured using silicon gate CMOS fabrication. CMOS low power circuit operation makes high speed LS-TTL operation achievable. The internal circuit is composed of inverter and buffer, which provide high noise immunity and stable output.


    Original
    XC74UL04AA ETR1304 XC74UL04AA SSOT-25 XC74UL04AAN PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE INDUSTRIAL TEMPERATURE RANGE IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using


    Original
    IDT74ALVC08 IDT74ALVC08 MIL-STD-883, 200pF, ALVC08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE INDUSTRIAL TEMPERATURE RANGE IDT74ALVC08 3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using


    Original
    IDT74ALVC08 MIL-STD-883, 200pF, ALVC08 PDF

    VHC08G

    Abstract: 74VHC08 MC74VHC08 MC74VHC08DR2 MC74VHC08DR2G MC74VHC08DTR2 MC74VHC08DTR2G MC74VHC08MEL VHC08
    Text: MC74VHC08 Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    MC74VHC08 MC74VHC08 MC74VHC08/D VHC08G 74VHC08 MC74VHC08DR2 MC74VHC08DR2G MC74VHC08DTR2 MC74VHC08DTR2G MC74VHC08MEL VHC08 PDF

    VHCT08AG

    Abstract: vhc*t08a MC74VHCT08A MC74VHCT08ADR2 MC74VHCT08ADR2G MC74VHCT08ADTR2 MC74VHCT08ADTR2G VHCT08
    Text: MC74VHCT08A Quad 2−Input AND Gate The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    MC74VHCT08A MC74VHCT08A VHCT08A MC74VHCT08A/D VHCT08AG vhc*t08a MC74VHCT08ADR2 MC74VHCT08ADR2G MC74VHCT08ADTR2 MC74VHCT08ADTR2G VHCT08 PDF

    marking t132

    Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
    Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    MC74VHC1G08 353/SC marking t132 marking code V6 diode V = Device Code PDF

    top 258 mn

    Abstract: 16 pins qfn 3x3 footprint 485G NLSF308 NLSF308MNR2 QFN-16
    Text: NLSF308 Quad 2- Input AND Gate The NLSF308 is an advanced high speed CMOS 2-input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    NLSF308 NLSF308 NLSF308/D top 258 mn 16 pins qfn 3x3 footprint 485G NLSF308MNR2 QFN-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original
    MC74VHC1GT08 r14525 MC74VHC1GT08/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MC74VHC08 Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    MC74VHC08 MC74VHC08 MC74VHC08/D PDF

    MC74VHC1G08

    Abstract: No abstract text available
    Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    MC74VHC1G08 MC74VHC1G08 353/SCâ r14525 MC74VHC1G08/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MC74VHCT08A Quad 2-Input AND Gate The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    MC74VHCT08A MC74VHCT08A VHCT08A MC74VHCT08A/D PDF

    NC7SB3157

    Abstract: NLASB3157 NLASB3157DFT2 sot-363 analog switch
    Text: NLASB3157 2:1 Multiplexer The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDSON resistances while maintaining CMOS low power dissipation. Analog and digital voltages that may vary


    Original
    NLASB3157 NLASB3157 NC7SB3157. r14525 NLASB3157/D NC7SB3157 NLASB3157DFT2 sot-363 analog switch PDF

    485G

    Abstract: NLSF308 NLSF308MNR2 NLSF308MNR2G
    Text: NLSF308 Quad 2−Input AND Gate The NLSF308 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original
    NLSF308 NLSF308 NLSF308/D 485G NLSF308MNR2 NLSF308MNR2G PDF

    nec d 588

    Abstract: nec naming rule nec product naming rule NEC CMOS-4
    Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required


    OCR Scan
    35-MICRON 66MHz nec d 588 nec naming rule nec product naming rule NEC CMOS-4 PDF

    d 65632

    Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
    Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7ST08F/FU 2-Input AND Gate The TC7S08 is a high speed CMOS 2-Input AND Gate fabricated with sil­ icon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


    OCR Scan
    TC7S08 TC74HC PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC7WH08FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH08FU, TC7WH08FK UNDER DEVELOPMENT DUAL 2-INPUT AND GATE The TC7WH08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate CMOS technology.


    OCR Scan
    TC7WH08FU/FK TC7WH08FU, TC7WH08FK TC7WH08 PDF

    SSOP8

    Abstract: TC7WH08 TC7WH08FK TC7WH08FU
    Text: TOSHIBA TC7WH08FU/FK TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH08FU, TC7WH08FK UNDER DEVELOPMENT DUAL 2-INPUT AND GATE The TC7WH08 is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate CMOS technology.


    OCR Scan
    TC7WH08FU/FK TC7WH08FU, TC7WH08FK TC7WH08 SSOP8 TC7WH08FK TC7WH08FU PDF