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    CMOS TRANSISTOR Search Results

    CMOS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CMOS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AO4L

    Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
    Text: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells


    Original     		MTC-35000 102ps 216ps AO4L ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1 PDF

    0.18-um CMOS technology characteristics

    Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
    Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM


    Original     		5136B-05/06/1K 0.18-um CMOS technology characteristics atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology PDF

    specifications of transistor AC126

    Abstract: 74 Series Logic ICs gate diagrams octal Bilateral Switches specifications of AC126 TC4000 series CMOS Logic ICs inverter TC74HC(T)XXXAP 74HC octal bidirectional latch specifications transistor AC126 VHCV541 TC7PZ17FU
    Text: SEMICONDUCTOR GENERAL CATALOG General-Purpose Logic ICs CMOS Logic ICs Low-Voltage CMOS Logic ICs CMOS Logic ICs in Ultra-Small US Packages Dual-Supply Level Shifters CMOS Bus Switch ICs Application-Specific Logic One-Gate CMOS L-MOS 1 2010/9 SCE0004K


    Original     		2010/9SCE0004K 74VHC, TC74AC/ACTxxx TC74VHC/VHCT/VHCVxxx ACT00, ACT02 ACT08, ACT32 VHC00, VHCT00A, specifications of transistor AC126 74 Series Logic ICs gate diagrams octal Bilateral Switches specifications of AC126 TC4000 series CMOS Logic ICs inverter TC74HC(T)XXXAP 74HC octal bidirectional latch specifications transistor AC126 VHCV541 TC7PZ17FU PDF

    pin diagrams of basic gates

    Abstract: BGA and QFP Package Nand gate Crystal Oscillator 272000 astro tool HQFP-208 MCM NAND qcm 5 sim 980 CE61
    Text: To Top / Lineup / Index Product Line-up FUJITSU Semicustom Products Semicustom Products Gate arrays Sea-of-Gate CMOS Macro-embedded type cell arrays CMOS Standard cell CMOS Semicustom microcontrollers QCM series* ASTRO NT Bi-CMOS SIM/PLL SERIES Bi-CMOS SAW PLL


    Original     		PDF

    specifications of transistor AC126

    Abstract: hc132a hc138a specifications of AC126 HC74A TC7PGU04FU transistor AC126 hc273a -toshiba toshiba vhc32 TC4W53FU
    Text: SEMICONDUCTOR GENERAL CATALOG General-Purpose Logic ICs CMOS Logic ICs Low-Voltage CMOS Logic ICs CMOS Logic ICs in Ultra-Small US Packages Dual-Supply Level Shifters CMOS Bus Switch ICs Application-Specific Logic One-Gate CMOS L-MOS 1 2009-8 SCE0004I CMOS Logic ICs (74AC, 74VHC, 74HC and Standard Series) Quick Reference


    Original     		SCE0004I 74VHC, TC74AC/ACTxxxSeries) TC74VHC/VHCTxxxSeries) ACT00, ACT02 ACT08, ACT32 VHC00, VHCT00A, specifications of transistor AC126 hc132a hc138a specifications of AC126 HC74A TC7PGU04FU transistor AC126 hc273a -toshiba toshiba vhc32 TC4W53FU PDF

    d 65632

    Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
    Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products


    OCR Scan     		PDF

    TC518512

    Abstract: No abstract text available
    Text: TOSHIBA TC518512AF/AFT-70,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC518512AF/AFT-70 288-WORD TC518512AF/AFT 304-bit 32-pin 525-inch OP32-P-525-1 TC518512AF TC518512 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC518129AFWI-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power


    OCR Scan     		TC518129AFWI-10 TC518129AFWI TC518129AFWI D-121 D-122 D-123 PDF

    tahc10

    Abstract: AOtoA18 aft12
    Text: TOSHIBA TC51V8512AF/AFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51V8512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC51V8512AF/AFT-12 288-WORD TC51V8512AF/AFT 304-bit 32-pin 525-inch OP32-P-525-1 775TYP tahc10 AOtoA18 aft12 PDF

    TC518512AF

    Abstract: C701 T
    Text: TOSHIBA TC518512AF/AFT-70V,-80V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC518512AF/AFT-70V 288-WORD TC518512AF/TC518512AFT 304-bit TC518512AF/AFT 32-pin 525-inchELF OP32-P-525-1 TC518512AF/AFT-70 TC518512AF C701 T PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC518512 AF/AFT-70 V,-80 V ,-10 V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC518512 AF/AFT-70 288-WORD TC518512AF/AFT 304-bit 32-pin OP32-P-525-1 PDF

    TC518512AF

    Abstract: TC518512
    Text: TOSHIBA T C 518512A F/AFT-70,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		18512A F/AFT-70 288-WORD TC518512AF/AFT 304-bit 32-pin 525-inch OP32-P-525-1 TC518512AF TC518512 PDF

    TC518129BFW

    Abstract: D147 ic dip d143 T transistor TC518128 BFL 147
    Text: TOSHIBA TC518129BPL/BFiyBFWI7BFrL-70V/8ÖV/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC 518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power


    OCR Scan     		TC518129BPL/BFiyBFWI7BFrL-70V/8 518129B-V TC518129B-V D-146 TC518129BPL/BFL/BFWL/BFTL-70V/80V/10V D-147 TC518129BPL/BFL/BFWL/BFTL-70V/80V/1OV 2SA1015 TC518129BFW D147 ic dip d143 T transistor TC518128 BFL 147 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC51V8512AF/AFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51V8512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC51V8512AF/AFT-12 288-WORD TC51V8512AF/AFT 304-bit 32-pin 525-inch OP32-P-525-1 TC51V8512AF PDF

    TC518512

    Abstract: transistor D195
    Text: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er


    OCR Scan     		TC518512PL/FL/FTL/rRL-70LV/80LV/10LV TheTC518512PL TC518512PL TC518512PL-LV D-194 TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV D-195 TC518512 transistor D195 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC518512FIvTl/FII/TOL-70 L'I /8QflJ)/10a3) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The


    OCR Scan     		TC518512FIvTl/FII/TOL-70 /10a3) TC518512PL 1CH724Ã D02bb2fl D-173 TC518512PL/FL/FTL/TRL-70 PDF

    TC518128

    Abstract: 518128 TC518128bfl tc518128bftl 80D-80 TC518128B TC518128bfwl A8263
    Text: TOSHIBA TC518128BPiyBFiyBFWiyBFIlr70V/æV/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power


    OCR Scan     		TC518128BPiyBFiyBFWiyBFIlr70V/ TC518128B-V TC518128BPL/BFL/BFWL/BFTL-70V/80V/1OV TC518128 518128 TC518128bfl tc518128bftl 80D-80 TC518128B TC518128bfwl A8263 PDF

    Untitled

    Abstract: No abstract text available
    Text: S-251001A ►UNDER DEVELOPMENT 1M-bit CMOS static RAM The S-251001A is a 1,048,576-bit CMOS static RAM organized as 128KX8, based on a 6-transistor cell design, and fabricated using Sll’s advanced CMOS process. The S-251001A features low standby current, wide


    OCR Scan     		S-251001A S-251001A 576-bit 128KX8, 32-pin 0D2407 PDF

    TC518128BPL

    Abstract: No abstract text available
    Text: TOSHIBA TC518128BPI/BFVBFW I/BFTL-70V/80V/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power


    OCR Scan     		TC518128BPI/BFVBFW I/BFTL-70V/80V/10V TC518128B-V TC518128B-V -70V/80V/1 TC518128BPL/BFL/BFWUBFTL-70V/80V/1OV TC518128BPL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TB2104F TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB2104F VFD DRIVER The TB2104F is a VFD fluorescent display tube driver IC implemented by the Bi-CMOS process. The logic section is configured with CMOS transistors, and the high voltage tolerant output driver section is


    OCR Scan     		TB2104F TB2104F SSOP30-P-375-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS


    OCR Scan     		TC518128A-LV TC518128A -10LV, -12LV 18128A L-80LV L-10LV PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS


    OCR Scan     		7C518129A-LV TC518129A-LV -12LV TC518129AFWL-80LV TC518129AFWL-10LV TC518129AFWL-12LV TC518129APL/AFL/AFWLâ -10LV, PDF

    TB2104F

    Abstract: HVo3
    Text: TOSHIBA TB2104F TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB2104 F VFD DRIVER The TB2104F is a VFD fluorescent display tube driver IC implemented by the Bi-CMOS process. The logic section is configured with CMOS transistors, and the high voltage tolerant output driver section is


    OCR Scan     		TB2104F TB210 TB2104F SSOP3Q-P-375-1 HVo3 PDF

    VFD ISE Electronics

    Abstract: TB2104F
    Text: TO SH IBA TB2104F TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC T B2104 F VFD DRIVER The TB2104F is a VFD fluorescent display tube driver IC implemented by the Bi-CMOS process. The logic section is configured with CMOS transistors, and the high voltage tolerant output driver section is


    OCR Scan     		TB2104F TB2104F VFD ISE Electronics PDF