500VA
Abstract: led on off automatically colourcoded diodes buss mda AUS8971 240VA
Text: 500VA Line Voltage Conditioner Stock No. 780-065 General The 500VA Line Voltage Conditioner is designed to provide a stable a.c. supply to equipment eliminating transient disturbances, sags and over-voltages which occur on the mains supply. To achieve this the Conditioner incorporates a front-end surge reduction filter followed
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500VA
240Va
189-283Va
287Va
174Va
AUS8971
led on off automatically
colourcoded diodes
buss mda
AUS8971
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSB'lBl ODSblMa 113 • APX BA 281 blE D A SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in DO-35 envelope, intended for use in ratio detector circuits. Due to small spreads of forward voltage at low currents and of junction capacitance, the diodes can be used as
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DO-35
DO-35
OD-27)
10/rA
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BA281
Abstract: ratio Detector D02fc diode 420 colourcoded diodes
Text: N AMER PHILIPS/DISCRETE bTE D • bbSB'lBl DOSblMâ A 113 iA P X BA 281 SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in DO-35 envelope, intended fo r use in ratio detector circuits. Due to small spreads o f forw ard voltage at low currents and o f junction capacitance, the diodes can be used as
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D02fc
BA281
DO-35
DO-35
OD-27)
7Z86588
ratio Detector
diode 420
colourcoded diodes
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MULLARD OC
Abstract: diodes byd17 BYD17D BYD17 SOD87 controlled avalanche diode
Text: DEVELOPMENT DATA This data sheet contains advance in fo rm a tio n and BYD17 SERIES specifications are subject to change w ith o u t notice. CONTROLLED AVALANCHE RECTIFIER DIODES Rectifier diodes in hermetically sealed leadless SMID* envelopes and intended for general purpose
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BYD17
BYD17D
M87-1103/RST
MULLARD OC
diodes byd17
SOD87 controlled avalanche diode
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BA281
Abstract: ratio Detector colourcoded diodes
Text: N AMER PHILIPS/DISCRETE b^E D • ^ 5 3 1 3 1 DDEblMê 113 BA 281 A SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in D O -3 5 envelope, intended fo r use in ratio detector circuits. D ue to small spreads o f forw ard voltage at low currents and o f junction capacitance, the diodes can be used as
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BA281
DO-35
DO-35
OD-27)
85ximum
10//A
7Z86588
BA281
ratio Detector
colourcoded diodes
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6822
Abstract: resistor 56E BA281
Text: SbE » • VllDÖSb ODMOOR? TÔT « P H I N PHILIPS INTERNATIONAL SbE T> II BA281 T- 07-07 ÜN SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in DO -35 envelope, intended fo r use in ratio detector circuits. Due to small spreads of forw ard voltage at low currents and of junction capacitance, the diodes can be used as
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BA281
T-07-07
DO-35
DO-35
OD-27)
7Z86588
6822
resistor 56E
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BA281
Abstract: D02fc SOD-27 ratio Detector
Text: N AMER PHILIPS/DISCRETE bTE D • bbSB'lBl DOSblMâ A 113 iA P X BA 281 SILICO N RATIO D ETECTO R DIODE Silicon planar epitaxial diode in D O -3 5 envelope, intended fo r use in ratio detector circuits. D ue to small spreads o f forw ard voltage at low currents and o f junction capacitance, the diodes can be used as
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D02fc
BA281
DO-35
DO-35
OD-27)
7Z86588
BA281
SOD-27
ratio Detector
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BYD37D
Abstract: Mullard Diode
Text: DEVELOPMENT DATA BYD37D;G;J;K;M This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Rectifier diodes in hermetically sealed leadless SM ID* envelopes. They are intended fo r television and
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BYD37D
M87-1105/RST
Mullard Diode
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BYD77
Abstract: BYD77A BYD77E Mullard Diode
Text: DEVELOPMENT DATA BYD77 SERIES This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. EPITAXIAL AVALANCHE DIODES Rectifier diodes in hermetically sealed leadless SMID'-envelopes. They feature low forward voltage
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BYD77
BYD77A
BYD77A;
BYD77E;
M87-1106/RST
BYD77A
BYD77E
Mullard Diode
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d1n914
Abstract: 1N916 1N914 diode 1N916
Text: • bbSBS31 DDEbâ^l 7 N AUER P H I L I P S / D I S C R E T E bD ■APX t iT E 1N914 1N916 ]> HIGH-SPEED SILICON DIODES Planar epitaxial diodes intended fo r general purpose applications. Q UICK REFERENCE D A T A Continuous reverse voltage Vr Repetitive peak reverse voltage
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bbSBS31
1N914
1N916
OD-27
DO-35)
1N914:
1N916:
1N914
d1n914
1N916
diode 1N916
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1N9168
Abstract: 1N916 1N914 diode 1N916
Text: SbE D 711DÖ 2b □ D 4 Q C1 4 1 173 • R H IN 1N 914 1N 916 P H IL IP S IN T E R N A T IO N A L SLE D H IG H -S P E E D S IL IC O N D IO D E S T-03 Planar epitaxial diodes intended fo r general purpose applications. Q U IC K R EFE R E N C E D A T A Continuous reverse voltage
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D4QC141
1N914
1N916
OD-27
DO-35)
1N914:
1N916:
1N9168
diode 1N916
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Untitled
Abstract: No abstract text available
Text: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications.
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1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4151
IN4153
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Untitled
Abstract: No abstract text available
Text: b b S B ^ l 002b2^2 APX 101 BAV10 N AMER PHILIPS/DISCRETE ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, ultra-high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories. QUICK REFERENCE DATA
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002b2
BAV10
DO-35
BAV10
bb53T31
7Z10681
100XL
400mA
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in4151
Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
Text: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.
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bb53131
1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4153 diode
1N4150
1N4151
1N4153
IEC134
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in4151
Abstract: IN4150 IN4153 diode IN4153 N4150 1N4151 1N4153 1N4150 IEC134 colourcoded diodes
Text: • bbSB'm 1N4150 1N4151 1N4153 OOEb'îOB 202 H A P X N APIER P HILI PS/D ISCR ETE b^E » ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.
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1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4153
IN4153 diode
1N4151
1N4153
1N4150
IEC134
colourcoded diodes
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BA315
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE blE T> bbSBTBl 0Q2blS3 SfiQ IAPX BA315 J LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in a DO-35 envelope primarily intended for low voltage stabilizing. QUICK REFERENCE DATA Repetitive peak reverse voltage V RRM Repetitive peak forward current
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BA315
DO-35
BA315
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b lE b b S B ^ l OOSblSD fl71 BA314 D IAPX A LOW VOLTAGE STABISTOR W Z Silicon planar epitaxial diode in DO-35 envelope. This diode is intended for low voltage stabilizing e.g. bias stabilizer in class-B output stages, clipping, clamping and meter protection.
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BA314
DO-35
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BA314
Abstract: IEC134 UBC671 bb53
Text: N AUER PH IL IP S/ DIS CR ETE blE D b b S B ^ l A oosbiso a?i BA314 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in DO-35 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in ciass-B o u tp u t stages, clipping, clamping and meter protection.
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BA314
DO-35
DO-35
OD-27)
DD2bl52
BA314
IEC134
UBC671
bb53
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Untitled
Abstract: No abstract text available
Text: Overvoltage Protection for instrumentation and control equipment Overvoltage Protection for instrumentation and control equipment DK 4 RD for retrofitting electronic components Arc suppression circuit for contacters and solenoid valves AC WOP 4 with a plug in varistor
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b0000
S14k30
S14k275
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BA315
Abstract: vf590 IEC134
Text: bbSBTBl Q02blS3 SfiG BA 315 bTE T> N AUER PHILIPS/DISCRETE IAPX JL LOW VOLTAGE STABISTOR Silicon plan ar ep itaxial diode in a DO-35 envelope p rim a rily intended for low voltage stabilizing. QUICK REFERENCE DATA R epetitive peak re v e rs e voltage R epetitive peak forw ard c u rre n t
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Q02blS3
BA315
DO-35
DO-35
002bl55
BA315
vf590
IEC134
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbSB'lBl OQSblB? 336 BA220 b^E D APX Jl GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purpose and can also be used as regulator. Q U IC K R E F E R E N C E D A T A Repetitive peak reverse voltage
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BA220
DO-35
bb53c
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E bb53c]31 00Ebl41 flb^ BA221 » APX L GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. Q U IC K R E F E R E N C E D A T A max. 30 max. 400 V Continuous reverse voltage VR Repetitive peak forward current
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bb53c
00Ebl41
BA221
DO-35
bb53T31
QD2bl44
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BA221
Abstract: ba221 d BB533
Text: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature
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Q02bim
BA221
DO-35
DO-35
BA221
ba221 d
BB533
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 Q02b3bb TTD * A P X N AUER PHILIPS/MSCRETE BAX14 b^E ]> GENERAL PURPOSE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.
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bbS3T31
Q02b3bb
BAX14
DO-35
OD-27
DO-35)
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