COMMON EMITTER TRANSISTORS Search Results

COMMON EMITTER TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
SSM10N961L	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

COMMON EMITTER TRANSISTORS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CA3081, CA3082 Semiconductor September 1998 General Purpose High Current NPN Transistor Arrays 480.4 Features • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter	OCR Scan	CA3081, CA3082 CA3081 CA3082 100mA)	PDF
ca3081 Abstract: ca3082 common collector npn array transistor Common collector configuration F16 DIODE 3082 Text: 33 CA3081, CA3082 ^ «f ":.l! ; General Purpose High Current NPN Transistor Arrays " Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter	OCR Scan	CA3081, CA3082 CA3081 CA3082 100mA) common collector npn array transistor Common collector configuration F16 DIODE 3082	PDF
vp 3082 Abstract: CA3081 CA3082 Text: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter	OCR Scan	CA3081, CA3082 CA3081 CA3082 100mA) vp 3082	PDF
MRF839 Abstract: MRF839F Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF839 MRF839F The RF Line NPN Silicon RF Power Transistors 2 3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SILICON . . . designed for 12.5 Volt UHF large-signal, common-emitter amplifier applications in	OCR Scan	MRF839F MRF839	PDF
MDC03 Abstract: Marking TRANSISTOR 737 common collector pnp array common collector npn array MFW14 Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array Text: MDC03 Transistor, array, 3 x NPN, 3 x PNP Features Dimensions Units: mm • • available in MFW14 package package marking: MDC03 • three NPN transistors with common emitter and three PNP transistors with common emitter are mounted in single package •	OCR Scan	MDC03 MFW14 MFW14) MDC03 -100m -100m QG153EH Marking TRANSISTOR 737 common collector pnp array common collector npn array Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array	PDF
Untitled Abstract: No abstract text available Text: MS2203 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • • 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION The MS2203 is a common emitter, silicon NPN, microwave	Original	MS2203 MS2203	PDF
Untitled Abstract: No abstract text available Text: MS2203 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave	Original	MS2203 MS2203	PDF
MS2203 Abstract: No abstract text available Text: MS2203 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: The MS2203 is a common emitter, silicon NPN, microwave	Original	MS2203 MS2203	PDF
Untitled Abstract: No abstract text available Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMY1N/FMY1A •F e a tu re s 1) Both 2SA1037AK ch ip and 2SC241ZK chip in UMT and SMT packages. 2) PNP and NPN transistors are con nected in common emitter config uration. 3) M ounting co st and area can be	OCR Scan	2SA1037AK 2SC241ZK SC-88A 32MHz	PDF
SD5000 Abstract: M122 S10A015 Text: SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION POUT = 1.5 W MIN. WITH 9.5 dB GAIN	Original	SD5000 S10A015 SD5000 M122 S10A015	PDF
Untitled Abstract: No abstract text available Text: SD4590 RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE	Original	SD4590 800-960MHz SD4590	PDF
SD1489 Abstract: airtronic ATC 100A Text: SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	Original	SD1489 SD1489 airtronic ATC 100A	PDF
push pull class AB RF linear Abstract: ATC 100A SD1489 Text: SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	Original	SD1489 SD1489 push pull class AB RF linear ATC 100A	PDF
M208 Abstract: SD4590 Text: SD4590 RF & MICROWAVE TRANSISTORS 800-960 MHz CELLULAR BASE STATION . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE	Original	SD4590 -28dB SD4590 M208	PDF

ZO 150 Abstract: SD1490 zo 150 66 Text: SD1490 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	Original	SD1490 SD1490 ZO 150 zo 150 66	PDF
gold capacitor Abstract: SD5000 thomson capacitor M122 S10A015 Text: SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION P OUT = 1.5 W MIN. WITH 9.5 dB GAIN	Original	SD5000 S10A015 SD5000 gold capacitor thomson capacitor M122 S10A015	PDF
SD1456 Abstract: push pull class AB RF linear TCC3100 Text: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	Original	SD1456 TCC3100) TCC3100 SD1456 push pull class AB RF linear TCC3100	PDF
SD1476 Abstract: 1uF 63V LCC7950 resistor 1W Text: SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR	Original	SD1476 SD1476 1uF 63V LCC7950 resistor 1W	PDF
30mils Abstract: SD1732 TDS595 transistor cross ref RF UHF modulat applications of Transistor BDX 54 Text: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	Original	SD1732 TDS595) TDS595 SD1732 30mils TDS595 transistor cross ref RF UHF modulat applications of Transistor BDX 54	PDF
Arco 403 Abstract: SD1476 Text: SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR	Original	SD1476 SD1476 Arco 403	PDF
SD1732 Abstract: TDS595 s3 vision LCC capacitor S2 Text: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	Original	SD1732 TDS595) TDS595 SD1732 TDS595 s3 vision LCC capacitor S2	PDF
R45X Abstract: 20AWG M208 SD4590 Text: SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE	Original	SD4590 -28dB STD-883D SD4590 R45X 20AWG M208	PDF
SD1456 Abstract: TCC3100 push pull class AB RF linear Text: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION	Original	SD1456 TCC3100) TCC3100 SD1456 TCC3100 push pull class AB RF linear	PDF
VK200 FERRITE Abstract: 22 J.63 capacitor vk-200 ferrite choke VK-200 M142 SD4017 Text: SD4017 RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS . . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT MATCHING DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY COMMON EMITTER CONFIGURATION POUT = 30 W MIN. WITH 7.5 dB GAIN	Original	SD4017 SD4017 VK200 FERRITE 22 J.63 capacitor vk-200 ferrite choke VK-200 M142	PDF

COMMON EMITTER TRANSISTORS Search Results

COMMON EMITTER TRANSISTORS Result Highlights (5)

COMMON EMITTER TRANSISTORS Datasheets Context Search

Untitled

ca3081

vp 3082

MRF839

MDC03

Untitled

Untitled

MS2203

Untitled

SD5000

Untitled

SD1489

push pull class AB RF linear

M208

ZO 150

gold capacitor

SD1456

SD1476

30mils

Arco 403

SD1732

R45X

SD1456

VK200 FERRITE