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    TE Connectivity CQ14973001

    Hook-up Wire 100G0111-3.00-54 Price Per Foot
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    Mouser Electronics CQ14973001 2,045
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    C&K 7301SDCQE

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    Mouser Electronics 7301SDCQE 45
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    C&K 7305P3YCQE

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    Mouser Electronics 7305P3YCQE 44
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    C&K 7301SYCQE

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    Advantech Co Ltd RSB-3730CQ-XHA1E

    Single Board Computers
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    Mouser Electronics RSB-3730CQ-XHA1E
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    CQ 730 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sc11092

    Abstract: sc11066 DY8 001 transformer transistor c1850 SC11011 C1650 C1850 DY9 transformer DY11 coil connection SC11077
    Text: Entire Datasheet of 11094CV/CQ/CN International Semiconductor Technologies SC11094 Data Sheet Facsimile and Data Modem Analog Processor CONTENTS Features General Description Block Diagram Pin Description Functional Description Terms Of Sale go back to Products Offered


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    PDF 11094CV/CQ/CN SC11094 11094CV-CQ-CN sc11092 sc11066 DY8 001 transformer transistor c1850 SC11011 C1650 C1850 DY9 transformer DY11 coil connection SC11077

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44325092B μPD44325182B μPD44325362B 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0038EJ0200 Rev.2.00 August 11, 2011 Description The μPD44325092B is a 4,194,304-word by 9-bit, the μPD44325182B is a 2,097,152-word by 18-bit and the μPD44325362B is a 1,048,576-word by 36-bit synchronous quad data rate static RAM fabricated with


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    PDF PD44325092B PD44325182B PD44325362B 36M-BIT 304-word 152-word 18-bit PD44325362B

    PD44647186AF5-E22-FQ1-A

    Abstract: PD44647366AF5-E25-FQ1-A
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44647094A-A, 44647184A-A, 44647364A-A, 44647096A-A, 44647186A-A, 44647366A-A 72M-BIT QDRTM II+ SRAM 2.0 & 2.5 CLOCK CYCLES READ LATENCY 4-WORD BURST OPERATION Description The μPD44647094A-A and μPD44647096A-A are 8,388,608-word by 9-bit, the μPD44647184A-A and μPD44647186A-A


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    PDF PD44647094A-A, 4647184A-A, 4647364A-A, 4647096A-A, 4647186A-A, 4647366A-A 72M-BIT PD44647094A-A PD44647096A-A 608-word PD44647186AF5-E22-FQ1-A PD44647366AF5-E25-FQ1-A

    2N101

    Abstract: 2J51A CQX18
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646092A-A, 44646182A-A, 44646362A-A, 44646093A-A, 44646183A-A, 44646363A-A 72M-BIT DDR II+ SRAM 2.0 & 2.5 CLOCK CYCLES READ LATENCY 2-WORD BURST OPERATION Description The μPD44646092A-A and μPD44646093A-A are 8,388,608-word by 9-bit, the μPD44646182A-A and μPD44646183A-A


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    PDF PD44646092A-A, 4646182A-A, 4646362A-A, 4646093A-A, 4646183A-A, 4646363A-A 72M-BIT PD44646092A-A PD44646093A-A 608-word 2N101 2J51A CQX18

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD44165092B μPD44165182B μPD44165362B 18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION R10DS0017EJ0200 Rev.2.00 October 6, 2011 Description The μPD44165092B is a 2,097,152-word by 9-bit, the μPD44165182B is a 1,048,576-word by 18-bit and the μPD44165362B is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced


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    PDF PD44165092B PD44165182B PD44165362B 18M-BIT 152-word 576-word 18-bit PD44165362B

    PD44647366AF5-E22-FQ1-A

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF M8E0904E PD44647366AF5-E22-FQ1-A

    2N101

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF M8E0904E 2N101

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF M8E0904E

    K7R320884M

    Abstract: K7R321884M K7R321884M-FC20 K7R321884M-FC25 K7R323684M K7R323684M-FC16 K7R323684M-FC20 K7R323684M-FC25 Q34D
    Text: K7R323684M K7R321884M K7R320884M 1Mx36 & 2Mx18 & 4Mx8 QDR TM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.


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    PDF K7R323684M K7R321884M K7R320884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, 13mmx15mm 15mmx17mm -FC25 K7R320884M K7R321884M K7R321884M-FC20 K7R321884M-FC25 K7R323684M K7R323684M-FC16 K7R323684M-FC20 K7R323684M-FC25 Q34D

    UPD443

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44325084, 44325094, 44325184, 44325364 36M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44325084 is a 4,194,304-word by 8-bit, the µPD44325094 is a 4,194,304-word by 9-bit, the µPD44325184 is a


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    PDF PD44325084, 36M-BIT PD44325084 304-word PD44325094 PD44325184 152-word 18-bit PD44325364 UPD443

    CY7C1316JV18

    Abstract: CY7C1318JV18 CY7C1320JV18 CY7C1916JV18
    Text: CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 ■ 300 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency


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    PDF CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 18-Mbit CY7C1316JV18 CY7C1318JV18 CY7C1320JV18 CY7C1916JV18

    Untitled

    Abstract: No abstract text available
    Text: K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDR TM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.


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    PDF K7R323684M K7R321884M K7R320884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit, 13mmx15mm 15mmx17mm

    CY7C1318JV18

    Abstract: CY7C1320JV18
    Text: CY7C1318JV18 CY7C1320JV18 18 Mbit DDR II SRAM Two Word Burst Architecture Features Functional Description • 18 Mbit Density 1M x 18, 512K x 36 ■ 300 MHz Clock for High Bandwidth ■ Two word Burst for reducing Address Bus Frequency ■ Double Data Rate (DDR) Interfaces


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    PDF CY7C1318JV18 CY7C1320JV18 CY7C1318JV18, CY7C1320JV18 CY7C1318JV18

    Untitled

    Abstract: No abstract text available
    Text: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor


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    PDF R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit R10DS0146EJ0101 R1Q4A4436RBG 304-word 36-bit R1Q4A4418RBG 608-word 18-bit

    Untitled

    Abstract: No abstract text available
    Text: CY7C1311JV18/CY7C1911JV18 CY7C1313JV18/CY7C1315JV18 18-Mbit QDR II SRAM 4-Word Burst Architecture Features Configurations • Separate Independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1311JV18 – 2M x 8 ■ 300 MHz Clock for High Bandwidth


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    PDF CY7C1311JV18/CY7C1911JV18 CY7C1313JV18/CY7C1315JV18 18-Mbit CY7C1311JV18 CY7C1313JV18 CY7C1315JV18

    Untitled

    Abstract: No abstract text available
    Text: National 3* Se mi c o n du c t j r CQ c/> c CLC452 S i n g l e S u p p l y , L o w - P o w e r , High O u t p u t , Current Feedback Amplifier General Description Features The CLC452 has a new output stage that delivers high output drive current 100mA , but consumes minimal quiescent supply


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    PDF CLC452 CLC452 100mA) 130MHz 00V/fis

    Untitled

    Abstract: No abstract text available
    Text: MN0300A y MICRO NETWORKS HIGH-SPEED 12-Bit LINEAR T/H AMPLIFIER DESCRIPTION FEATURES • 3 0 0n s ec M ax A cq uisition T im e • 10V S te p to ± 0 .0 1 % • + 0 .0 1 % F S L in earity • 100psec M a xim u m A p e rtu re Jitter • +10V In p u t/O u tp u t R an ge


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    PDF MN0300A 12-Bit 100psec -0300A MN0300A ADC85 ADC85â 600nsec)

    Untitled

    Abstract: No abstract text available
    Text: MN0300A HIGH-SPEED 12-Bit LINEAR T/H AMPLIFIER MICRO NETWORKS DESCRIPTION FEATURES • 3 0 0 n s e c M a x A cq uisition T im e • 10V S te p to ± 0 .0 1 % • ± 0 .0 1 % F S L in earity • 100psec M a xim u m A p e rtu re Jitter • ±10V In p u t/O u tp u t R an ge


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    PDF MN0300A 12-Bit 100psec ADC85 600nsec) MN0300A

    Untitled

    Abstract: No abstract text available
    Text: ca t a l o g T H MICRO SWITCH A D IV ISIO N OF V 3L -121-P 8 SW IT C H -B A S 1C F R E E P O R T . IL L IN O IS . U .S .A . HONEYW ELL is t i n g CQ-B2I50 FE D . M F G . C O D E S f S S S — .17 CORROSION STEEL RESISTANT ACTUATOR j-»— 1.285 i.0 30' -.125 MAX


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    PDF -121-P CQ-B2I50 I230Z

    M51414BSP

    Abstract: SG10
    Text: ^ 5 ?! ^ Vi*- S Q . m o - E g S ^ s S S ^ I m. CO Zi O |v w H C O ^ Q • i i o > . $ t8 *°*n p z -OmO O O ¡2 f ^ X Q t u z UJ UJ lu Ä 2 § 0 > g «'’ à 2 9 o 9 9 9 O 5 æ 2 > X X > CD > h > > > OL ü t? CQ ïs û. 00 tu JB W lull/ w Tj- M 51414BSP


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    PDF M51414BSP M51414BSP& M51414BSP SG10

    Untitled

    Abstract: No abstract text available
    Text: N a t i o n a l Semi c o n du c t j r co 3* CQ c/> c CLC451 S i n g l e S u p p l y , L o w - P o w e r , High O u t p u t , P r o g r a m m a b le Buffer General Description Features The CLC451 is a low cost, high speed 85MHz buffer that features user-programmable gains of +2, +1, and -1V/V. It has a


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    PDF CLC451 CLC451 85MHz) 100mA) prov-530

    TYN 208 equivalent

    Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
    Text: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A


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    PDF 1N2977 N2979 N2980 N2983 N2984 ZC2800E ZC2810E ZC2811E ZC5800E CQ202-4N-2 TYN 208 equivalent bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent

    BRX49 equivalent

    Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
    Text: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number


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    PDF 1N270 1N276 1N283 1N295 1N457A 1N703A 1N705A 1N746A 1N747A 1N750A BRX49 equivalent FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208

    BTA08-600C equivalent

    Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
    Text: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B


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    PDF Z0409ME Z0409MF Z0409NE Z0409NF Z0410BE Z0410BF Z0410DE Z0410DF Z0410ME Z0410MF BTA08-600C equivalent BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465