Untitled
Abstract: No abstract text available
Text: SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1”
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SSA-005-2
SSA-005-2
SSA005-2A
950nm,
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cqy 17
Abstract: INFRARED DIODES CQY 40 IR array
Text: These components are RoHS compliant Pb SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow
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SSA-005-2
SSA-005-2
950nm,
cqy 17
INFRARED DIODES
CQY 40
IR array
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pair of led and photo transistor
Abstract: INFRARED DIODES CQY EMITTER
Text: These components are RoHS compliant SSA-005E&S Miniature IR Array Pb SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is
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SSA-005E
SSA-005
200nA
950nm,
pair of led and photo transistor
INFRARED DIODES
CQY EMITTER
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Untitled
Abstract: No abstract text available
Text: SSA-005E&S Miniature IR Array SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is equally suitable for
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SSA-005E
SSA-005
825nm
100mA
950nm,
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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BPW16N
Abstract: CQY 24
Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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BPW16N
D-74025
CQY 24
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CQY 26
Abstract: BPW17N diode 8308
Text: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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BPW17N
D-74025
CQY 26
diode 8308
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BHRM
Abstract: D665 103kn
Text: 補強リングを用いた鉄骨有孔ばりの力学特性 Mechanical Characteristics of Perforated Steel Beam with Reinforcing Ring 田中 秀宣＊ 中野 建蔵＊ Hidenori Tanaka Kenzo Nakano 大庭 秀治 ＊ 伊藤 倫夫＊ Shuuji Ohba Michio Itoh
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166J
Abstract: ic 9033 cqy 81 70REF ASTM-B209 CQY50 C2607
Text: 8 7 H-IS DRAVVING IS UNPUBLISHCE - OY TY:C 6 4 5 , 3 L ,- LOC JIST REVISIO~IS CLCCTRONICS CORPORATION. F 1. CDN~JECTDR DIMEI'JS:ONS ARE PER ARII\IC 600 2. CDN~JECTDR IS SUPPLIED wiTH CONTACTS CPER TABLE ASSEMBLED AS Sf-Owl\. 3. KEYII\G SHD\VN IN POSITIOI'I FJR ILLUSTRATION m~L Y
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11-10-og
166J
ic 9033
cqy 81
70REF
ASTM-B209
CQY50
C2607
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CQY36
Abstract: BPW16N BPW16
Text: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
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BPW16N
BPW16N
D-74025
15-Jul-96
CQY36
BPW16
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10
led 7 segment anode TIL 702
trw 007 diodes
TDDG 5250 m
817 optron
telefunken transistor
opto smd code marking NEC
TDDG 5250
hoa 865
DIODE PK IN 5401
7segment sm 4150
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08/TBA 2800
Abstract: TBA 2800
Text: TBA 2800 Infrared Pream plifier 1C A A A A A A A Bipolar integrated circuit, intended as a receiver preamplifier for Central Control Unit for the infrared remote-control sy stems designed with integrated circuits of ITT. y y y y y y y The TBA 2800 preamplifier 1C contains four main parts: the
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50-Hz-modulated
4bfl2711
08/TBA 2800
TBA 2800
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CQY 26
Abstract: TBA 2800 CQY 65 "Infrared Preamplifier"
Text: » MICRONAS Edition April 25, 1994 6251-203-6DS INTERMETALL TBA 2800 Infrared Preamplifier 1C Bipolar integrated circuit, intended as a receiver preamplifier for Central Control Unit for the infrared remote-control sy stems designed with integrated circuits of ITT.
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6251-203-6DS
50-Hz-modulated
CQY 26
TBA 2800
CQY 65
"Infrared Preamplifier"
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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DIN 50014
Abstract: CQY80
Text: Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau C o n stru ctio n Emitter: D etektor: GaAs-Lumineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Stromkreisen, rückwirkungsfreier Schalter A p p lic a tio n s :
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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Untitled
Abstract: No abstract text available
Text: Temic BPW17N Semiconductors Silicon NPN Phototransistor Description BPW 17N is a silicon NPN epitaxial planar phototransis tor in a miniature plastic case with a + 12‘ lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
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BPW17N
I5-Jut-96
15-Jul
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FL 817C
Abstract: K3022P equivalent nec 2561 equivalent 817c moc 3021 and 4n33 TLP 2561 CNY63 TLP 817 PS2001 C817B
Text: Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Code Definitions A Vishay Telefunken’s device is electrically and mechanically equivalent or better
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BRT11
DT1110
1106G
DT1110G
1123G
FL 817C
K3022P equivalent
nec 2561 equivalent
817c
moc 3021 and 4n33
TLP 2561
CNY63
TLP 817
PS2001
C817B
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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Untitled
Abstract: No abstract text available
Text: ISOCOfl COMPONENTS LTD m u * » t« v . . ir f J i m * » w w » * « » « a » ? j > •3 'V . M i i M S M Haatsio Dooosbs 3 HSE ]> g K M M frn * f t Jf ö iso t WMT3 i j w V > Æ > W i J ö * I £ # •V f t ! OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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CQY80
Abstract: VR BH RC CQY 95 CQY80NG
Text: Temic CQY80N G S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
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CQY80N
D-74025
12-Dec-97
CQY80
VR BH RC
CQY 95
CQY80NG
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12v to Amplifier 100w schematic diagrams
Abstract: LM1096N 12v stereo amplifiers circuit diagrams AM radio LM2896P-2 12v amplifer 100w lm2096
Text: Semiconductor LM1896/LM2896 Dual Audio Power Amplifier General Description Features The LM1896 is a high performance 6V stereo power amplifi er designed to deliver 1 watt/channel into 4 il or 2 watts bridged monaural into 8 0 . Utilizing a unique patented com
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LM1896/LM2896
LM1896/LM2896
LM1896
LM2896
11-lead
LM1896)
LM1896
12v to Amplifier 100w schematic diagrams
LM1096N
12v stereo amplifiers circuit diagrams
AM radio
LM2896P-2
12v amplifer 100w
lm2096
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TCHT1130
Abstract: Ex-90C
Text: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ
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TCHT1130
0806/IE
601-0860/IEC
TCHT1130
Ex-90C
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