12109
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
950trademarks
2011/65/EU
2002/95/EC.
12109
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Untitled
Abstract: No abstract text available
Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
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BPW17
Abstract: BPW17N CQY37 CQY37N
Text: CQY37N Vishay Semiconductors ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
BPW17
CQY37
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Untitled
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage
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PDF
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
2002/95/EC.
2011/65/EU.
JS709A
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CQY37
Abstract: No abstract text available
Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
D-74025
29-Mar-04
CQY37
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BPW17
Abstract: telefunken BPW17N CQY37N
Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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PDF
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
BPW17
telefunken
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BPW17N
Abstract: CQY37N
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 12° • Low forward voltage
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PDF
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
11-Mar-11
BPW17N
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BPW17N
Abstract: CQY37N BPW17
Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical
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CQY37N
CQY37N
BPW17N
D-74025
15-Jul-96
BPW17
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
08-Apr-05
BPW17
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CQY37N
Abstract: 7922 diode BPW17 Infrared Emitting Diode BPW17N
Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 12°
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CQY37N
BPW17N
2002/95/EC
2002/96/EC
CQY37N
18-Jul-08
7922 diode
BPW17
Infrared Emitting Diode
BPW17N
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
D-74025
30-Mar-06
BPW17
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
2002/95/Eed
08-Apr-05
BPW17
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Untitled
Abstract: No abstract text available
Text: CQY37N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
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LP 8029
Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
Text: CQY 37 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
BPW17N
D-74025
LP 8029
DIN 7990
CQY 26
7922 diode
cqy 35 n
BPW17N
cqy 17
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BPW17
Abstract: CQY37N BPW17N
Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
D-74025
20-May-99
BPW17
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BPW17
Abstract: BPW17N CQY37N
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
08-Apr-05
BPW17
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Untitled
Abstract: No abstract text available
Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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CQY37N
CQY37N
BPW17N
D-74025
05-May-04
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CQY37
Abstract: No abstract text available
Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
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Original
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PDF
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CQY37N
CQY37N
BPW17N
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
CQY37
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8239
Abstract: BPW17 BPW17N CQY37N
Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW17N
BPW17N
D-74025
20-May-99
8239
BPW17
CQY37N
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A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
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90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
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Untitled
Abstract: No abstract text available
Text: Temic CQY37N Sem i I o nd u c t n r s GaAs Infrared Emitting Diode in Miniature T - 3A Package Description C Q Y 3 7 N is a s ta n d a r d G a A s in f r a re d e m itt in g d io d e in a m i n ia t u r e to p v ie w p la s tic p a c k a g e . Its c l e a r le n s p r o v id e s a h ig h r a d ia n t in te n s ity w ith o u t e x
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PDF
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CQY37N
15-Jul-96
7922e
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CQX48B
Abstract: IR Emitters "IR Emitters"
Text: VISH A Y Vishay Telefunken ▼ Selector Guide IREDs Infrared Emitting Diodes Package Dim. Fig- Characteristics Jype + /- tp Standard IR Emitters GaAs 950 nm in Plastic Package T 40° 25 ! CQY36N am 10 26 L / mW/sr Ip / mA VF/ V CQY37N 12 ° 5 (>2.2) TSUS4400
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CQY36N
CQY37N
TSUS4400
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
TSUS5400
TSUS5401
IR Emitters
"IR Emitters"
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CQY36
Abstract: CQY37 CQY37N
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 MK-CBeTOAMOAbi □ 1,8 MM Kofl: [H M ] CQY37N CQY36 950 950 P„ [MBT/cpeflH.] >2,2 >0,7 Yron o63opa [0] 12 40 CQY36 CQY37 i-. nom. nporpaMMa nociaBOK KOMnaHHH TME electronics
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CQY37N
CQY36
o63opa
CQY37
CQY36
CQY37
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CQX48B
Abstract: TLH04400 TLRG542
Text: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2
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TLBR5410
TLDR4400
TLDR4900
TLDR5400
TLDR5800
TLHE4900
TLHE5100
TLHE5101
TLHE5102
TLHE5800
CQX48B
TLH04400
TLRG542
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