SCR 2146
Abstract: 72-12io8 cs 45-12IO1 scr 2032 IGD 001 tg-500 IXYS SCR Gate Drive CS 45-16io1R 300-12io3 CS thyristor cs 3-06
Text: Discrete Thyristors Contents 2 1 Type Page 1800 1600 1400 A VRRM/VDRM V 1200 IT(AV)M 800 Package style 1 16 ● ● CS 8-.io2 E1-2 2 3 19 19 ● ● ● ● CS 19-.ho1 CS 19-.ho1S E1-4 4 19 CS 20-.io1 E1-7 1 32 ● CS 23 E1-10 4 31 ● ● ● CS 30
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E1-10
E1-13
E1-16
E1-19
E1-22
E1-24
E1-26
SCR 2146
72-12io8
cs 45-12IO1
scr 2032
IGD 001
tg-500
IXYS SCR Gate Drive
CS 45-16io1R
300-12io3
CS thyristor cs 3-06
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DG406BP25
Abstract: HS- 2000V lN2430 gate turn-off 300a 1000v thyristor Gate Turn-Off Thyristors
Text: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces version, DS4090-3.0 DS4090-4.0 November 2005 LN24306 APPLICATIONS KEY PARAMETERS ITCM 1200A VDRM 2500V IT(AV) 500A dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC).
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DG406BP25
DS4090-3
DS4090-4
LN24306)
DG406BP25
HS- 2000V
lN2430
gate turn-off
300a 1000v thyristor
Gate Turn-Off Thyristors
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Untitled
Abstract: No abstract text available
Text: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces version, DS4090-3.0 DS4090-4.0 November 2005 LN24306 APPLICATIONS KEY PARAMETERS ITCM 1200A VDRM 2500V IT(AV) 500A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).
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DG406BP25
DS4090-3
DS4090-4
LN24306)
000V/Â
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ixys cs8
Abstract: CS808IO2 CLA30E1200HB CS8-12IO2 cla30e CS thyristor cs 3-06 IXYS CS8-0812 THYRISTOR
Text: CS 8 Phase Control Thyristors VRRM = 800-1200 V IT RMS = 25 A IT(AV)M = 16 A VRSM VDSM VRRM VDRM TO-64 V V 900 1300 800 1200 Type 1 2 2 3 3 CS 8-08io2 CS 8-12io2 1 M5 t 1 = Anode, 2 = Cathode, 3 = Gate Test Conditions IT(RMS) IT(AV)M TVJ = TVJM Tcase = 85°C; 180° sine
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8-08io2
8-12io2
ixys cs8
CS808IO2
CLA30E1200HB
CS8-12IO2
cla30e
CS thyristor cs 3-06
IXYS CS8-0812 THYRISTOR
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CS thyristor cs 3-06
Abstract: No abstract text available
Text: CS 8 Phase Control Thyristors VRRM = 800-1200 V IT RMS = 25 A IT(AV)M = 16 A VRSM VDSM VRRM VDRM TO-64 V V 900 1300 800 1200 Type 1 2 2 3 3 CS 8-08io2 CS 8-12io2 1 M5 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings IT(RMS) IT(AV)M
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8-08io2
8-12io2
CS thyristor cs 3-06
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45C100
Abstract: TO64 CS thyristor cs 3-06
Text: CS 8 Phase Control Thyristors VRRM = 800-1200 V IT RMS = 25 A IT(AV)M = 16 A VRSM VDSM VRRM VDRM TO-64 V V 900 1300 800 1200 Type 1 2 2 3 3 CS 8-08io2 CS 8-12io2 1 M5 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions Maximum Ratings IT(RMS) IT(AV)M
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8-08io2
8-12io2
45C100
TO64
CS thyristor cs 3-06
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IGCT thyristor ABB
Abstract: IGCT thyristor current max VT115 A115 B115 HFBR-1528 HFBR-2528 MTA-156 igct abb Pressure transmitter TBD
Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 630 5x103 1.8 2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 08F4510 PRELIMINARY Doc. No. 5SYA1223-06 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and
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08F4510
5SYA1223-06
CH-5600
IGCT thyristor ABB
IGCT thyristor current max
VT115
A115
B115
HFBR-1528
HFBR-2528
MTA-156
igct abb
Pressure transmitter TBD
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DG406BP
Abstract: No abstract text available
Text: DG406BP25 DG406BP25 Gate Turn-off Thyristor DS4090-5 July 2014 LN31730 APPLICATIONS KEY PARAMETERS 1200A ITCM VDRM 2500V 500A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies
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DG406BP25
DS4090-5
LN31730)
000V/Â
DG406BP
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IGCT thyristor ABB
Abstract: igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max
Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 520 3.5x103 2.3 2.3 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 06F6010 PRELIMINARY Doc. No. 5SYA1222-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and
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06F6010
5SYA1222-05
CH-5600
IGCT thyristor ABB
igct abb
IGCT 3300V
A115
B115
HFBR-1528
HFBR-2528
MTA-156
VT115
IGCT thyristor current max
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CS thyristor cs 3-06
Abstract: No abstract text available
Text: Phase Control Thyristors CS 8 ITRMS = 25 A ITAVM = 16 A VRRM = 800 - 1200 V VRSM VRRM VDSM VDRM V V 900 1300 800 1200 Type TO-64 1 2 2 3 3 CS 8-08io2 CS 8-12io2 1 M5 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine I TSM TVJ = 45°C; VR = 0
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8-08io2
8-12io2
CS thyristor cs 3-06
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DG406BP25
Abstract: AN4506 AN4839 DS4090-3
Text: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 2500V 400A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC).
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DG406BP25
DS4090-2
DS4090-3
DG406BP25
AN4506
AN4839
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300a 1500v thyristor
Abstract: DG406BP25
Text: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 2500V IT AV 400A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).
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DG406BP25
DS4090-2
DS4090-3
300a 1500v thyristor
DG406BP25
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DG406BP25
Abstract: No abstract text available
Text: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 2500V IT AV 400A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).
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DG406BP25
DS4090-2
DS4090-3
DG406BP25
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E113
Abstract: E119 7E17 8IO2 IXYS cs
Text: Discrete Thyristors Contents Package style Type Page 16 CS 8-.io2 E1-2 19 19 CS19-.ho1 CS 19-.ho1S E1-4 19 CS20-.io1 E1-7 32 CS 23 E1-10 31 CS 30 E1-13 CS 35 E1-16 CS45-.Î01 CS45-.Î01R new E1-19 100 CS 72 E1-22 164 CS 142 E1-24 380 CS300 E1-26
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CS19-.
CS20-.
E1-10
E1-13
E1-16
E1-19
CS45-.
CS300
E1-22
E113
E119
7E17
8IO2
IXYS cs
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A2529
Abstract: CS 8-12 10MSA
Text: Thyristors, SCRs S C R = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all oth e r co ntro lle d sem i-co n d uctor components, they feature the highest current capacity per chip area, especially at high
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O-247
ISOPLUS22QTM
O-208
T0-208
ISOPLUS247TM
-28UNF-2
A2529
CS 8-12
10MSA
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CS5 thyristor
Abstract: CS 23-16 thyristor CS 23-08 thyristor CS 23-06 thyristor CS 110 thyristor CS 23-04 thyristor CS thyristor cs 6-06 cs 16-12 cs 6-06 CS thyristor cs 6
Text: Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lf ic Itavm 85°C r Typ/type CS 0,8-02 do CS 0,8-04 do CS 0,8-06 do CS 0,8-07 do CS 0,8-08 do CS CS CS CS CS 3-02 3-04 3-06 3-07 3-08 do do do do do 2 2 2 \ bzw. 2 2 r 2 21 bzw.
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O-220
-TO-48
7073sl/22b
CS5 thyristor
CS 23-16 thyristor
CS 23-08 thyristor
CS 23-06 thyristor
CS 110 thyristor
CS 23-04 thyristor
CS thyristor cs 6-06
cs 16-12
cs 6-06
CS thyristor cs 6
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm
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O-220
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CS thyristor cs 6-06
Abstract: CS 23-16 thyristor CS5 thyristor CS 23-06 thyristor CS thyristor cs 3-04 CS thyristor cs 6 CS 23-04 thyristor CS thyristor cs 3-06 cs 8-12 Thyristor CS 23-08 thyristor
Text: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm
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O-220
-TO-48
CS thyristor cs 6-06
CS 23-16 thyristor
CS5 thyristor
CS 23-06 thyristor
CS thyristor cs 3-04
CS thyristor cs 6
CS 23-04 thyristor
CS thyristor cs 3-06
cs 8-12 Thyristor
CS 23-08 thyristor
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cs 23-12
Abstract: scr 2308 CS 8-12 10MSA
Text: , Thyristors SCRs SCR = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all other semiconductor components, they feature the highest current capacity per chip area, espe cially at high voltage. They are mainly
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O-208AA
O-208AC
O-209AC
cs 23-12
scr 2308
CS 8-12
10MSA
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T 4512 H diode
Abstract: diode T 4512 H cs 23-12 cs 45-12 iol
Text: , Thyristors SCRs SC R = Silicon Controlled Rectifier Phase Control Thyristors {S C R = S ilic o n C o n tro lle d R e c tifie r) Thyristo rs are v e ry rugged devices. C o m p a re d to all o ther controlled se m ico n d u cto r com pone nts, they featu re
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O-247
TC5-208
T0-209
T 4512 H diode
diode T 4512 H
cs 23-12
cs 45-12 iol
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CS 8-12
Abstract: CS45-08iol CS630 CS2014 CS30-16 CS30-16iol CS45-16 300-12io3 CS1250 cs 35-12
Text: , Thyristors SCRs Phase Control Thyristors SC R = S ilicon C o ntrolled R ectifier Thyristors are very rugged devices. Compared to all other sem iconductor components, the y feature the highest current capacity per chip area, especially at high voltage. They are mainly used as
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-208AA
O-20BAC
CS 8-12
CS45-08iol
CS630
CS2014
CS30-16
CS30-16iol
CS45-16
300-12io3
CS1250
cs 35-12
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thyristor BBC CS 0,6
Abstract: thyristor BBC thyristor BBC cs 16 thyristor BBC CS thyristor BBC cs 3 02 do2 thyristor BBC cs 550 bbc cs 130 thyristor brown boveri thyristors BBC CS-130-08 thyristor BBC CS 3,5
Text: BBC Technical Data Silicon-Semiconductor BTOW NB0U6BI Components Printed order nr. Thyristors D GHS 30393 E T h y ris to rs a re c o n tro lle d s e m ic o n d u c to r ce lls . T h e y a re b e in g p ro d u c e d in a fo u r layer a rra n g e m e n t w ith a lto g e th e r th re e pn ju n c tio n s Si, s 2, s3, see Fig. 1 b. In reverse
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D-6840
thyristor BBC CS 0,6
thyristor BBC
thyristor BBC cs 16
thyristor BBC CS
thyristor BBC cs 3 02 do2
thyristor BBC cs 550
bbc cs 130 thyristor
brown boveri thyristors
BBC CS-130-08
thyristor BBC CS 3,5
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THYRISTOR cs 550 16
Abstract: thyristor cs 550 CS 110 thyristor CS 250-12 thyristor CS thyristor cs 6 thyristor cs 52 CS thyristor cs 5-10
Text: A S E A BROWN/ABB SENICON D^ A3 OOMflBOñ □□□□173 Netzthyristoren Thyristor Jf Vdrm Vrrm •trm s V A kAVi^C •tavm Tc = 85°C A/°C A Itsm ft Ovjm 10 ms) 8,3 ms 10 ms Tv j=45°C tvjm A2S A!s A A 3300 54500 45000 V A 350/70 275 CS 295-08 to 4 CS 295-12 to 4
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SG2000EX26
Abstract: No abstract text available
Text: TO SH IBA SG2000EX26 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION • • • • • LOW SNUBBER TYPE SG2000EX26 Unit in mm Repetitive Peak Off-State Voltage : V d r m = 2500 V Note 1 R.M.S On-State Current : It (RMS) = 1050 A Peak Turn-Off Current
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SG2000EX26
SG2000EX26
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