SOLAR TRANSISTOR
Abstract: SOLAR INVERTER
Text: Efficiency Benefits of Full Gate CSTBT in PV Applications Executive Summary Full Gate CSTBT™ allows you to harvest more energy than competing technologies. Powerex Intelligent Power Modules include gate drivers that are optimized for Full Gate CSTBT.
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cm150rx1
Abstract: cm100rx-24 CM50MX-24A CM600HX-12A CM50M cm75mx-24a CM450DX-24A cm35mx CM35MX-24A CM600HX-24A
Text: Product Bulletin Diamond Power Products NX-SERIES IGBTS Package A Package B DESCRIPTION The NX -Series IGBT uses the 5th Generation CSTBT Carrier Stored Trench-Gate Bipolar Transistor chip. The CSTBT chip offers lower losses as compared to previous chip generations.
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DP-00035
cm150rx1
cm100rx-24
CM50MX-24A
CM600HX-12A
CM50M
cm75mx-24a
CM450DX-24A
cm35mx
CM35MX-24A
CM600HX-24A
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wind inverter
Abstract: SOLAR TRANSISTOR SOLAR INVERTER mitsubishi power module
Text: Efficiency Benefits of Full Gate CSTBT in Wind Power Applications Executive Summary Full Gate CSTBT™ allows you to harvest more energy from the same source than competing technologies. There are two major reasons that wind inverter customers focus on efficiency.
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H BRIDGE inverters using igbt
Abstract: difference between inverter and ups difference between IGBT and MOSFET IN inverter n Power mosfet depletion
Text: New MEGA POWER DUAL IGBT Module with Advanced 1200V CSTBT Chip Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA
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400A/1200V
H BRIDGE inverters using igbt
difference between inverter and ups
difference between IGBT and MOSFET IN inverter
n Power mosfet depletion
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PM100RLA060
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM100RLA060
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
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PM100CLA120
5kW/22kW
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E80276
Abstract: PM150RLA120
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
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PM150RLA120
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E80276
Abstract: PM100CLA120
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
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PM100CLA120
5kW/22kW
E80276
PM100CLA120
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
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E80276
Abstract: PM150RLA120 optocoupler PC 187
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
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PM150RLA120
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optocoupler PC 187
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM600CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM600CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.8V @Tj=125°C
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PM600CLA060
45kW/55kW
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM200CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM200CLA060
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PM150CLA060
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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30KW Inverter Diagram
Abstract: PM300CLA060 IGBT 10 A Optocoupler PC 801
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM300CLA060
30KW Inverter Diagram
PM300CLA060
IGBT 10 A
Optocoupler PC 801
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PM100CLA060
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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E80276
Abstract: PM100RLA060 INVERTER FOR motor
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM100RLA060
protectio15
E80276
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INVERTER FOR motor
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E80276
Abstract: PM150RLA060
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM150RLA060
protectio20
E80276
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM100*060
Abstract: optocoupler PC 187
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
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PM100RLA060
PM100*060
optocoupler PC 187
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E80276
Abstract: PM50B4LB060 OPTOCOUPLER 15V
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4LB060 FLAT-BASE TYPE INSULATED PACKAGE PM50B4LB060 FEATURE a Adopting new 5th generation IGBT CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C
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PM50B4LB060
E80276
PM50B4LB060
OPTOCOUPLER 15V
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E80276
Abstract: PM50B5LA060
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LA060 FLAT-BASE TYPE INSULATED PACKAGE PM50B5LA060 FEATURE a Adopting new 5th generation IGBT CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C
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PM50B5LA060
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