transistor st 431
Abstract: No abstract text available
Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 ) s ( ct u d o 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage
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2ST3360
2ST3360
transistor st 431
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marking BS SOT23
Abstract: 2N7000 circuits
Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application
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2N7000
2N7002
OT23-3L,
OT23-3L
marking BS SOT23
2N7000 circuits
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sem 2005
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–60/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-60 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high
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MRF6522â
MRF6522-60
sem 2005
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Untitled
Abstract: No abstract text available
Text: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability
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IRGP30B120KD-EP
O-247AD
IRGP30B120KD-E
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035H
Abstract: IRGP30B120KD-E IRGP30B120KD-EP
Text: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability
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IRGP30B120KD-EP
O-247AD
IRGP30B120KD-E
035H
IRGP30B120KD-E
IRGP30B120KD-EP
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IRGP30B120KD-EP
Abstract: ir igbt 1200V 40A 035H IRGP30B120KD-E
Text: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability
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IRGP30B120KD-EP
O-247AD
IRGP30B120KD-E
IRGP30B120KD-EP
ir igbt 1200V 40A
035H
IRGP30B120KD-E
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Untitled
Abstract: No abstract text available
Text: NJM2368 SWITCHING REGULATOR CONTROL IC FOR FLYBACK •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2368 is a high speed switching regulator control IC which can operate at low voltage. It uses a totempole output circuit , so that it can drive an external Bipolar Transistor directly.
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NJM2368
NJM2368
NJM2368D
NJM2368M
NJM2368E
NJM2368V
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BD901
Abstract: case BD901 BD899 BD645
Text: File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON] S E CT OR SbE D 8-Ampere N-P-N Darlington Power Transistors • 43 02 271 GDMDtifiS 230 IHAS 45-60-80-100-Volts, 70 Watts TERMINAL DESIGNATIONS Gain of 750 at 4 A BD895A, BD897A, BD899A)
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BD895,
BD895A,
BD897,
BD897A,
BD899,
BD899A,
BD901
45-60-80-100-Volts,
BD901
case BD901
BD899
BD645
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SMP50N06-25
Abstract: SMP50N06
Text: CT*S i licoriix SMP50N06-25 in c o rp o ra te d N-Channel Enhancement Mode Transistor 25 milli ohm rDS 0N TO-22 OAB TOP VIEW PRODUCT SUMMARY O V(BR)DSS rDS(ON) (il) Id (A) 60 0.025 46 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE 12 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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SMP50N06-25
SMP50N06-25
SMP50N06
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2N6576
Abstract: 2N6576 equivalent
Text: File Number 1152 HARR IS S E M I C O N D S E CT OR 2N6576, 2N6577, 2N6578 5bE ]> • 43 D2 27 1 OD HG S^ l bS3 H H A S 15-Ampere N-P-N Darlington Power Transistors ~ F 3 3 'Z 9 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERMINAL DESIGNATIONS Features:
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2N6576,
2N6577,
2N6578
15-Ampere
O-204AA
2N6578
2N6576
2N6576 equivalent
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IRF162
Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
Text: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E
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IRF150,
IRF151,
IRF152,
IRF153
IRF152
IRF153
75BVDSS
IRF162
IRF161
IRF163
IRF150
1RF16
circuits of IRF150
MOSFET IRF150
IRF151
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Untitled
Abstract: No abstract text available
Text: P 35-2^1 File Number 610 HARRI S SE MI C O N D S E CT OR 2N6386, 2N6387, 2N6388 SbE I 430 227 1 0 0 4 Q 5M 7 5Mb H H A S 10-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A 2N6387,2N6388 Gain of 1000 at 3 A (2N6386)
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2N6386,
2N6387,
2N6388
10-Ampere
2N6387
2N6388)
2N6386)
O-22QAB
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2N6533
Abstract: Ha 100b 2cs24 2n651
Text: HARRI S S E I U C O N D S E CT OR SbE » • 43D 22 71 0 D 4 D S 7 2 7T1 B I H A S 2N6530,2N6531,2N6532, 2N6533 File Number 8 7 3 7 = 3 3 -2 ? 8-Ampere N-P-N Darlington Power Transistors 80,100,120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533)
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2N6530
2N6531
2N6532,
2N6533
2N6530,
2N6532)
2N6533)
2N6531)
92CS-39»
O-22CAB
2N6533
Ha 100b
2cs24
2n651
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rectifier s4 79A
Abstract: 1R2132 3 phase 75kW motor soft circuit diagram 1r2152 215 dc brake rectifier motor smk 630 IR2132J UL84 230v dc motor drive circuit diagram 1 HP SINGLE PHASE induction motor speed control using pwm inverter
Text: International I R Rectifier PD6.071C PRELIMINARY IRPT1056 P C M f iR m A IN In te g ra te d P o w e r S ta g e fo r 1 h p M o t o r D riv e s • 1 bp 0.75kW power output Industrial rating ct 1 5 0 % overiood for 1 minute . 1 8 0 -24 0 V AC input, 50/60 Hz
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IRPT1056
80-240V
IR2132J
rectifier s4 79A
1R2132
3 phase 75kW motor soft circuit diagram
1r2152
215 dc brake rectifier motor
smk 630
UL84
230v dc motor drive circuit diagram
1 HP SINGLE PHASE induction motor speed control using pwm inverter
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2955v
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MTP2955V TMOS V Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0.200 OHM T M O S V is a n ew te c h n o lo g y d e sig n e d to a chie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TD15N06VL TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0-085 OHM N-Channel Enhancement-Mode Silicon Gate TM O S V i s a new te ch n o lo g y d esig n ed to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFETs. T h is
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2955V
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t Preview MTD2955V TMOS V Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TM O S V NjJSpj TM O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p rod u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This
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D15N06V
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD15N06V TMOS V Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device T M O S P O W E R FET 15 A M P E R E S 60 V O LTS N-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area p rod u ct a b o u t o n e -h a lt th a t of sta n d ard M O SFETs. This
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4614 mosfet
Abstract: MOTOROLA 3055V 3055VL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD3055VL TM O S V P o w er Field E ffe c t T ran sisto r DPAK fo r S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0-18 OHM N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O S FE Ts. This
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0E-03
0E-02
0E-01
4614 mosfet
MOTOROLA 3055V
3055VL
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5P06V
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T P 5 P 06 V TM O S V P ow er Field E ffe c t Tran sisto r M otorola P re fe rre d D evice P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5 AMPERES 60 VOLTS RDS on = 0.450 OHM TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area p rod u ct a b o u t o n e -h a lf th a t o f sta n d ard M O SFETs. T h is
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TP2222A
Abstract: ct 60 transistor TP2222 TP5816 TP2906A kd pnp TP2907A tp3061 TP2221 TP2221A
Text: € # SPRAGUE BIPOLAR TRANSISTORS « BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES TP TRANSISTORS • S m a ll -s ig n a l T O - 9 2 plastic transistors. Su g ge s te d replace m e n t s f o r 2 N series d e v i c e s a v a i l a b l e in T O - 5 , T O - 1 8 , T O - 3 9 ,
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O-105,
O-106,
orTO-226AB
TP2221
TP2222A
ct 60 transistor
TP2222
TP5816
TP2906A
kd pnp
TP2907A
tp3061
TP2221A
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2N4265
Abstract: Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062 2N2712
Text: SPRAGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES 2N TRANSISTORS • Sm all-signal TO-92 plastic transistors. JEDEC ‘2N’ registered types. Catalog Number Case Style PD , = 25°C mW 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2926
2N3395
2N3396
2N3397
2N3398
2N4265
Sprague Electric
2N5832
2N3859
2N2926-1
660111
sprague TO92
2N3404 NPN
2N4062
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silect
Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
Text: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level
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2N929
2N930
2N2483
N2484
2S501
2S502
2S503
2N3707
2N3012
TIS50
silect
N4060
bc182l
2N3709
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tf5r21zz
Abstract: No abstract text available
Text: Audio I DO-T Transistor Transformers L o c a t in g L in e Type No. M IL P a rt N o . 1 D 0 -T 4 4 M 2 7 /1 7 2 01 ? D O -T 2 9 M 2 7 /1 7 2 - 0 2 3 D 0 -T 1 2 4 D 0 -T 1 3 P r l. Im p . O 8 0 CT UNIT LOCATION KEY Located Type No. on Line D O -T 1 D O -T 2
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