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    KEMET Corporation C0402C470J5RACTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 47pH 5% X7R 0402
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    Mouser Electronics C0402C470J5RACTU 29,356
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    • 10 $0.041
    • 100 $0.025
    • 1000 $0.016
    • 10000 $0.01
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    KEMET Corporation C0402C470K4RACTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 16V 47pF X7R 0402 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C0402C470K4RACTU 22,540
    • 1 $0.1
    • 10 $0.049
    • 100 $0.029
    • 1000 $0.019
    • 10000 $0.014
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    KEMET Corporation C0603C470K1RACTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 47pF X7R 0603 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C0603C470K1RACTU 15,023
    • 1 $0.25
    • 10 $0.117
    • 100 $0.094
    • 1000 $0.062
    • 10000 $0.051
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    KEMET Corporation C0805C470J5RACTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 47pF X7R 0805 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C0805C470J5RACTU 13,593
    • 1 $0.26
    • 10 $0.107
    • 100 $0.094
    • 1000 $0.064
    • 10000 $0.044
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    KEMET Corporation C0603C470K5RACTU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 47pF X7R 0603 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C0603C470K5RACTU 13,545
    • 1 $0.22
    • 10 $0.128
    • 100 $0.073
    • 1000 $0.068
    • 10000 $0.047
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    CT RAC 70 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7270m

    Abstract: No abstract text available
    Text: WHITE /MICROELECTRONICS W PD32M 72-XM DC 32Mx72 DRAM DIM M GENERAL DESCRIPTION FEATURES ^RAC cT" > o Perform ance range: ^RC ^PC W PD32M 72-60M DC 60ns 20ns 110ns 40ns W PD32M 72-70M DC 70ns 25ns 130ns 45ns The W P D32M 72-XM DC is an 32M x 72 bit Dynamic RAM high


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    PD32M 72-XM 32Mx72 72-60M 72-70M 110ns 130ns 7270m PDF

    ct rac 70

    Abstract: preset Potentiometers carbon 2322 350 1S473 ecp10
    Text: ECP10 2322 483 A _ 10mm ENCLOSED CARBON PRESET Q U IC K R E F E R E N C E D A TA Resistance range E3-series , linear law, log law on request 100 i i to 4,7 Maximum dissipation at 40 °C at 70 °C at 85 °C 0,1 W 0,05 W 0,025 W Temperature coefficient (range 1 k£2 to 2.2 MS2)


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    ECP10 1000h ct rac 70 preset Potentiometers carbon 2322 350 1S473 ecp10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z) Jun. 27, 2001 LP EO Description HM5117805 Series The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta


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    E0156H10 ADE-203-630D HM5117805 152-w 28-pin ns/60 PDF

    ct rac 70

    Abstract: No abstract text available
    Text: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z) Jun. 27, 2001 LP EO Description HM5117805 Series The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta


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    HM5117805 E0156H10 ADE-203-630D 152-w 28-pin ns/60 ct rac 70 PDF

    ct rac 70

    Abstract: HM5117805 HM5117805J-5 HM5117805J-6 HM5117805J-7 HM5117805LJ-5
    Text: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z) Jun. 27, 2001 LP EO Description HM5117805 Series The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta


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    E0156H10 ADE-203-630D HM5117805 152-w 28-pin ns/60 ct rac 70 HM5117805J-5 HM5117805J-6 HM5117805J-7 HM5117805LJ-5 PDF

    17805

    Abstract: ct rac 70 HM51W17805 HM51W17805J-5 HM51W17805J-6 HM51W17805LS-6
    Text: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0155H10 (Ver. 1.0) (Previous ADE-203-631D (Z) Jun. 27, 2001 LP EO Description HM51W17805 Series The HM51W 17805 is a C MOS dynamic R AM orga nized 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM51W 17805 off ers Extende d Da ta


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    E0155H10 ADE-203-631D HM51W17805 HM51W 152-w 28-pin ns/60 17805 ct rac 70 HM51W17805J-5 HM51W17805J-6 HM51W17805LS-6 PDF

    cm6800

    Abstract: CM6500 CM6902 CM6501 CM6901 power supply cm6800 Champion CM6800 CM6900 CM6802 Champion CM6802
    Text: PFC/PWM CONTROLLER DESIGN ALGORITHMS PFC-PWM CM6800/01/02/24 and CM6900/01/02 Design Algorithms Also, for Single PFC, CM6500 and CM6501, Please use the equations for CM6800/01/02 Prepared By: Jeffrey H. Hwang All the values should be typical values unless it was specified otherwise.


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    CM6800/01/02/24 CM6900/01/02 CM6500 CM6501, CM6800/01/02 70Khz CM6800/01/24 CM6900/01 CM6802 CM6902 cm6800 CM6501 CM6901 power supply cm6800 Champion CM6800 CM6900 Champion CM6802 PDF

    Untitled

    Abstract: No abstract text available
    Text: IIP ^ Y ^ ^QT72 4 f l 0 0 2 ñ 2 cí i:í ñ 01 TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC51V16400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC51 V16400BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­


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    TC51V16400BST-60/70 TheTC51V16400BST TheTC51 V16400BST TC51V16400BST 300mil) PDF

    ct rac 70

    Abstract: HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405s HM51W16405
    Text: 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh LP EO Description HM5116405 Series HM5117405 Series E0151H10 (Ver. 1.0) (Previous ADE-203-633D (Z) Jul. 6, 2001 (K) The HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word × 4-bit.


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    HM5116405 HM5117405 E0151H10 ADE-203-633D 304-word 26-pin ct rac 70 HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405s HM51W16405 PDF

    ct rac 70

    Abstract: HM51W16405 HM51W16405LS-5 HM51W16405LS-6 HM51W16405LS-7 HM51W16405S-5 HM51W16405S-6 HM51W16405S-7 HM51W17405
    Text: 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh LP EO Description HM51W16405 Series HM51W17405 Series E0152H10 (Ver. 1.0) (Previous ADE-203-647D (Z) Jul. 6, 2001 (K) The HM51W16405 Series, HM51W17405 Series are CMOS dynamic RAMs organized 4,194,304-word ×


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    HM51W16405 HM51W17405 E0152H10 ADE-203-647D 304-word 300-mil ct rac 70 HM51W16405LS-5 HM51W16405LS-6 HM51W16405LS-7 HM51W16405S-5 HM51W16405S-6 HM51W16405S-7 PDF

    HM5118165

    Abstract: HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 ct rac 70
    Text: 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh E0154H10 (Ver. 1.0) (Previous ADE-203-636D (Z) Jul. 6, 2001 (K) LP EO Description HM5118165 Series The HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers Extended


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    16-bit) E0154H10 ADE-203-636D HM5118165 576-word 16-bit. 42-pin 50-pin HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 ct rac 70 PDF

    Untitled

    Abstract: No abstract text available
    Text: HB56A472E Series 4,194,304-word x 72-bit High Density Dynamic RAM Module HITACHI Description The HB56A472E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The HB56A472E is a 4 M


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    HB56A472E 304-word 72-bit 16-Mbit HM5116400BTS) 16-bit 74ABT16244) PDF

    Kamaya OHM RMC

    Abstract: kamaya RMC RHC resistor RMC 210 10GH resistor rnc 55 150GA RHC16 150GQ FCR18
    Text: HIGH OHM THICK FILM CHIP RESISTORS RHC16,20,32 K a m a y a ’s high ohm thick film chip resistors are available up to 150GQ. These resistors are primarily vised in current sensing applications such as pyroelectric sensors and compact measuring instruments.


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    RHC16 150GQ. in0603, 150GH. RHC16 RHC20 RHC32 Kamaya OHM RMC kamaya RMC RHC resistor RMC 210 10GH resistor rnc 55 150GA 150GQ FCR18 PDF

    Untitled

    Abstract: No abstract text available
    Text: W9816G6JH 512K  2 BANKS  16 BITS SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 8. 9. 10. GENERAL DESCRIPTION . 3 FEATURES . 3


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    W9816G6JH PDF

    tc5118165bj

    Abstract: TC5118165B TC5118165 ct rac 70 TC5118165BFT
    Text: TOSHIBA TC5118165BJ/BFT60/70 PRELIM INARY 1,048,576 W O RD X 16 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­


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    TC5118165BJ/BFT60/70 TC5118165BJ/BFT TC5118165BJ/ DR16160695 TC5118165B J/BFT-60/70 B-119 tc5118165bj TC5118165 ct rac 70 TC5118165BFT PDF

    HM538253BTT-7

    Abstract: HM534253B DTH circuit diagram HM538253B HM538253BJ-10 HM538253BJ-7 HM538253BJ-8 HM538254B TMS34020 ct rac 70
    Text: 2 M VRAM 256-kword x 8-bit Hyper Page Mode (HM538254B) LP EO Description HM538253B Series HM538254B Series E0163H10 (Ver. 1.0) (Previous ADE-203-264A/265 (Z) Jul. 6, 2001 (K) Features ro The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword × 8-bit dynamic


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    256-kword HM538254B) HM538253B HM538254B E0163H10 ADE-203-264A/265 HM538253B/HM538254B 512-word HM538253BTT-7 HM534253B DTH circuit diagram HM538253BJ-10 HM538253BJ-7 HM538253BJ-8 TMS34020 ct rac 70 PDF

    jeida dram 88 pin

    Abstract: STI321000C2
    Text: STI321000C2-xxV,-xxSV 88-PIN CARDS 1M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: I ^RAC ^CAC *RC STI3210O0C2-60 60ns 15ns 120ns STI321000CZ-70 70ns 20ns 140ns STI3210OOC2-8O 80ns 20ns 160ns The Simple Technology STI321000C2 is a 1M bil x3 2 Dynamic


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    STI321000C2-xxV STI3210O0C2-60 STI321000CZ-70 STI3210OOC2-8O 120ns 140ns 160ns 88-PIN STI321000C2 jeida dram 88 pin PDF

    ML4800 - 24v

    Abstract: ML4800 24v ml4800 FAN4800AS FAN480X FAN4800 AN-6078SC fan4800a cm6800 7485 ic comparator
    Text: FAN4800AS / FAN4801S PFC/PWM Controller Combination Features Description ƒ Pin-to-Pin Compatible with ML4800 and FAN4800 and CM6800 and CM6800A ƒ PWM Configurable for Current Mode or Feedforward Voltage-Mode Operation ƒ Internally Synchronized Leading-Edge PFC and


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    FAN4800AS FAN4801S ML4800 FAN4800 CM6800 CM6800A FAN4800AS/01S FAN4800AS/01S ML4800 - 24v ML4800 24v FAN480X FAN4800 AN-6078SC fan4800a 7485 ic comparator PDF

    ML4800 24v

    Abstract: ML4800 - 24v AN-6078SC fairchild ML4800 power supply circuit FAN480X ML4800 battery charger FAN4800ASNY FAN4800 FAN4800AS ML4800
    Text: FAN4800AS/CS/01S/2S PFC/PWM Controller Combination Features Description ƒ Pin-to-Pin Compatible with ML4800 and FAN4800 and CM6800 and CM6800A ƒ PWM Configurable for Current Mode or Feedforward Voltage-Mode Operation ƒ Internally Synchronized Leading-Edge PFC and


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    FAN4800AS/CS/01S/2S ML4800 FAN4800 CM6800 CM6800A FAN4800AS/01S FAN4800CS/02S FAN4800AS/CS/01S/02S FAN4800AS/CS/01S/02S ML4800 24v ML4800 - 24v AN-6078SC fairchild ML4800 power supply circuit FAN480X ML4800 battery charger FAN4800ASNY FAN4800 FAN4800AS PDF

    AN6078

    Abstract: FAN4800 FAN4800C ML4800 FAN4802 FAN4800AS
    Text: FAN4800AS/CS/01S/2S PFC/PWM Controller Combination Features Description ̇ Pin-to-Pin Compatible with ML4800 and FAN4800 and CM6800 and CM6800A ̇ PWM Configurable for Current Mode or Feedforward Voltage-Mode Operation ̇ Internally Synchronized Leading-Edge PFC and


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    FAN4800AS/CS/01S/2S ML4800 FAN4800 CM6800 CM6800A FAN4800AS/CS/01S/02S 16-pin FAN4800AS/CS/01S/02S AN6078 FAN4800 FAN4800C FAN4802 FAN4800AS PDF

    Untitled

    Abstract: No abstract text available
    Text: A tm ens TOSHIBA oosassR íe s c TC514265DJ/DFT-50/60/70 III < tQ PRELIMINARY oe o s QU<t 4 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/


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    TC514265DJ/DFT-50/60/70 TheTC514265DJ/DFT TheTC514265DJ/ TC514265DJ/DFT I724fl TC514265DJ/D FT-50/60/70 DR04041293 PDF

    TC51V4260

    Abstract: No abstract text available
    Text: TOSHIBA TC51V4260DFTS60/70 PRELIM IN ARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4260DFTS uti­ lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    TC51V4260DFTS60/70 TheTC51V4260DFTS TC51V4260DFTS tcAC16. TC51V4260 PDF

    HFBR-1204

    Abstract: HP transistor cross reference 820 nm laser diode M2.2 self tapping screws HFBR-2208 HFBR-4202 HP8501A self tapping screws metric HP8503A self tapping screws
    Text: <vrK-% HEWLETT-PACKARD/ m CNPNTS HEW LETT PACKARD 34E D 44475Û4 ODGTbbT PIN PHOTODIODE FIBER OPTIC RECEIVER 1 B H P A HFBR-2208 T -* Features • GUARANTEED PERFORMANCE: 60 MHz Bandwidth at 5 V Reverse Bias Low Capacitance: Less than 1.6 pF 0.29 A/W Minim um Responsivity


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    4447SÃ HFBR-2208 hfbr-2207/8 HFBR-1204 HP transistor cross reference 820 nm laser diode M2.2 self tapping screws HFBR-4202 HP8501A self tapping screws metric HP8503A self tapping screws PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:


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    5117805/BSJ-50/-60 3117805/BSJ-50/-60 117805/BSJ-50/-60 SPT03042 PDF