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    CTR 34 Search Results

    CTR 34 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PS2711-1-V-A Renesas Electronics Corporation High CTR 4-PIN SOP Photocoupler, , / Visit Renesas Electronics Corporation
    PS2711-1-V-F3-A Renesas Electronics Corporation High CTR 4-PIN SOP Photocoupler Visit Renesas Electronics Corporation
    PS2911-1-V-AX Renesas Electronics Corporation High CTR, 4-Pin Ultra Small Package Flat-lead Photocoupler, , / Visit Renesas Electronics Corporation
    PS2711-1-A Renesas Electronics Corporation High CTR 4-PIN SOP Photocoupler, , / Visit Renesas Electronics Corporation
    PS2711-1-F3-A Renesas Electronics Corporation High CTR 4-PIN SOP Photocoupler Visit Renesas Electronics Corporation
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    CTR 34 Price and Stock

    Vishay Electro-Films CTR34101DFCGANHWS

    CTR 0.5% 50PPM WS
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    DigiKey CTR34101DFCGANHWS Tray 250
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    • 1000 $6.5326
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    Vishay Electro-Films CTR34800BFKGANHWS

    CTR 0.1% 100PPM WS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CTR34800BFKGANHWS Tray 250
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    Vishay Electro-Films CTR34602FFKGANHWS

    CTR 1% 100PPM WS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CTR34602FFKGANHWS Tray 250
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    • 1000 $4.29292
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    Vishay Electro-Films CTR3480ABFKGANHWS

    CTR 0.1% 100PPM WS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CTR3480ABFKGANHWS Tray 250
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    • 1000 $5.59304
    • 10000 $5.59304
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    Vishay Electro-Films CTR34000FFKGANHWS

    CTR 1% 100PPM WS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CTR34000FFKGANHWS Tray 250
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    CTR 34 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H11D3

    Abstract: DSA0011162
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original
    PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 17-August-01 H11D3 DSA0011162

    H11D3

    Abstract: No abstract text available
    Text: g y, , H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original
    PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3 H11D1/2/3/4 H11D3

    H11D3

    Abstract: OPTO H11D1
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original
    PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 1-888-Infineon H11D1/2/3/4 H11D3 OPTO H11D1

    H11D1

    Abstract: H11D3 h11d3-d4 H11D12
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original
    PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 1-888-Infineon H11D1/2/3/4 H11D1 H11D3 h11d3-d4 H11D12

    H11D1

    Abstract: H11D1-X007 H11D2 H11D3 H11D4
    Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation


    Original
    PDF H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC UL1577, E52744 H11D1 H11D1-X007 H11D2 H11D3 H11D4

    H11D1-X007

    Abstract: H11D1 H11D2 H11D3 H11D4
    Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation


    Original
    PDF H11D1/ H11D2/ H11D3/ H11D4 H11D1/H11D2, H11D3/H11D4, 2002/95/EC 2002/96/EC UL1577, E52744 H11D1-X007 H11D1 H11D2 H11D3 H11D4

    H11D3

    Abstract: RBE1
    Text: H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V


    Original
    PDF H11D1/H11D2/H11D3 H11D1/H11D2, H11D3, E52744 H11D1/2/3 H11D1/2/3 H11D3 RBE1

    H11D1

    Abstract: SFH640 SFH640-1 SFH640-2 SFH640-3
    Text: SFH640 5.3 kV TRIOS High BVCER Voltage Phototransistor Optocoupler FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-emitter Breakdown


    Original
    PDF SFH640 SFH640-1, SFH640-2, SFH640-3* E52744 17-August-01 H11D1 SFH640 SFH640-1 SFH640-2 SFH640-3

    cny17.2 application notes

    Abstract: Cny17-32 CNY17 CNY17-1 CNY17-2 CNY17-3
    Text: MOTOROLA Order this document by CNY17–1/D SEMICONDUCTOR TECHNICAL DATA CNY17-1 CNY17-2 * CNY17-3 * [CTR = 40 – 80%] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 63 – 125%] [CTR = 100 – 200%] The CNY17–1, CNY17–2 and CNY17–3 devices consist of a gallium


    Original
    PDF CNY17 CNY17-1 CNY17-2 CNY17-3 CNY17-1/D* cny17.2 application notes Cny17-32 CNY17-1 CNY17-2 CNY17-3

    SFH 110

    Abstract: H11D1 SFH640 SFH640-1 SFH640-2 SFH640-3 IB 6403
    Text: SFH 640 5.3 FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage, BVCER=300 V • Isolation Test Voltage: 5300 VACRMS


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    PDF SFH640-1, SFH640-2, SFH640-3* E52744 SFH640 SFH640 SFH 110 H11D1 SFH640-1 SFH640-2 SFH640-3 IB 6403

    H11D1

    Abstract: SFH640 SFH640-1 SFH640-2 SFH640-3
    Text: 5.3 FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-emitter Breakdown Voltage, BVCER=300 V • Isolation Test Voltage: 5300 VRMS


    Original
    PDF SFH640-1, SFH640-2, SFH640-3* E52744 SFH640 1-888-Infineon H11D1 SFH640 SFH640-1 SFH640-2 SFH640-3

    SFH640-2

    Abstract: H11D1 SFH640 SFH640-1 SFH640-3 IB 6403
    Text: 5.3 FEATURES • CTR at IF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage, BVCER=300 V • Isolation Test Voltage: 5300 VACRMS


    Original
    PDF SFH640-1, SFH640-2, SFH640-3* E52744 SFH640 SFH640-2 H11D1 SFH640 SFH640-1 SFH640-3 IB 6403

    Untitled

    Abstract: No abstract text available
    Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED SMD Pb LG-110DBK-CTR DATA SHEET DOC. NO : QW0905-LG-110DBK-CTR REV. : C DATE : 13 - Apr. - 2011 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/11 PART NO. LG-110DBK-CTR


    Original
    PDF LG-110DBK-CTR QW0905-LG-110DBK-CTR LG-110DBK-CTR LG-110 1000hrs MIL-STD-202F 10min) MIL-STD-202F: MIL-STD-750D:

    transistor ba 752 smd

    Abstract: transistor smd 1 SFH6156
    Text: SFH615A/SFH6156 Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS Features • Excellent CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS e3 • Fast Switching Times • Low CTR Degradation


    Original
    PDF SFH615A/SFH6156 2002/95/EC 2002/96/EC UL1577, E52744 VDE0884) SFH615A-1 SFH615A-2 SFH615A-3 SFH615A-4 transistor ba 752 smd transistor smd 1 SFH6156

    smd s101

    Abstract: s101 6-pin RM1M VC200
    Text: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES * * * • * * * * * * * * CTR at lp=10 mA, BVceR=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Coliector-Emitter Breakdown


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    PDF H11D1/H11D2/H11D3 H11D1/H11D2, E52744 H11D1/2/3 smd s101 s101 6-pin RM1M VC200

    11D transistor

    Abstract: No abstract text available
    Text: SIEMENS H11 D1/H11 FEATURES • CTR at lp=10 mA.BVcERxlOV: 220% • Good CTR Linearity with Forward Currant • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage Phototransistor, 5.3 KV, TRÍOS High BVcer Voitage Optocoupler Dimensions in inches mm


    OCR Scan
    PDF D1/H11 H11D3/H11D4, E52744put 11D transistor

    Untitled

    Abstract: No abstract text available
    Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVcer Voltage Optocoupler FEATURES Dimensions in inches mm • CTR at / F=1 O m A, BVCER=10 V: >20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Voltage


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    PDF H11D1/H11D2/H11D3/H11D4 D3/H11

    siemens d 2101

    Abstract: RB1M
    Text: H11D1/H11D2/H11D3 SIEMENS PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES Package Dimensions in Inches mm • CTR at lp*10 mA, BVCER=10 V: ¿20% * Good CTR Llnsarlty with Forward Currant * Low CTR Degradation • Very High Collector-Em ltter Breakdown


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    PDF H11D1/H11D2/H11D3 H11D1/H11D2, -H11D3, cH11D1/2/3 siemens d 2101 RB1M

    VDE0303

    Abstract: No abstract text available
    Text: Infineon H11D1/H11D2/H11D3/H11D4 FEATURES CTR at / F=10 mA, BVCER=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCer =300 V - H11D3/H11D4, BVc e r=200 V Isolation Test Voltage: 5300 VRMS


    OCR Scan
    PDF H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 5mA10J 1-888-lnfineon 11D1/2/3/4 VDE0303

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH640 5.3 KV TRIOS High BVCER Vbttage Phototransistor Optocoupler FEATURES • CTR at If=10 mA, VCE=10 V SFH640-1,40-80% SFH640-2,63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltag®. BVCeb=300 V


    OCR Scan
    PDF SFH640-1 SFH640-2 SFH640-3* SFH640 H11D1. SFH640

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH 640 PHOTOTRANSISTOR 5.3 KVTRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at lF=10 mA, VCE=10 V SFH640-1,40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Volt­


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    PDF SFH640-1 SFH640-2, SFH640-3* E52744 SFH640 H11D1 SFH640

    ACAA TRANSISTOR

    Abstract: No abstract text available
    Text: SFH 640 SIEMENS PHOTOTRANSISTOR 5.3 KVTRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at lF=10 mA, VCE=10 V SFH640-1, 40-80% SFH640-2, 63-125% SFH640-3*, 100-200% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Em itter Breakdown Volt­


    OCR Scan
    PDF SFH640-1, SFH640-2, SFH640-3* E52744 SFH640 ACAA TRANSISTOR

    3Ft 6PIN

    Abstract: 3FT 6-pin
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & TO VDE UL & ®®®® CSA SETI 8EMKO DEMKO NEMKO BABT GlobalOptolsolator 6-Pin DIP Optoisolators Transistor Output CNY17-1 {CTR » 40-80% CNY17-2* [CTR •93-126%] CNY17-3* [CTR ■100 -200%] The CNY17-1, CNY17-2 and CNY17-3 devices consist of a gallium


    OCR Scan
    PDF CNY17-1, CNY17-2 CNY17-3 CNY17-1 CNY17-2* CNY17-3* 3Ft 6PIN 3FT 6-pin

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO a VDE UL CSA SETI <D <B> SEMKO DEMKO BS NEM KO CNY17-1 CNY17-2 SAßT [CTR = 40-80%] 6-Pin DIP Optoisolators Transistor Output [CTR = 63-125%] CNY17-3 CTR = 100-200%] Motorola Preferred Devices The CNY17-1, CNY17-2 and CNY17-3 devices consist of a gallium arsenide infrared


    OCR Scan
    PDF CNY17-1, CNY17-2 CNY17-3 CNY17-1 CNY17-2 CNY17-3