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    CXK* SONY Search Results

    CXK* SONY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PCM2902E Texas Instruments Stereo USB1.1 CODEC with line-out and S/PDIF I/O, Bus-powered (HID Interface) 28-SSOP 0 to 70 Visit Texas Instruments Buy
    PCM2902E/2K Texas Instruments Stereo USB1.1 CODEC with line-out and S/PDIF I/O, Bus-powered (HID Interface) 28-SSOP 0 to 70 Visit Texas Instruments
    PCM2906CDB Texas Instruments Stereo USB CODEC with line out and S/PDIF, Bus-powered 28-SSOP -25 to 85 Visit Texas Instruments Buy
    PCM2903E Texas Instruments Stereo USB1.1 CODEC with line-out and S/PDIF I/O, Self-powered (HID Interface) 28-SSOP 0 to 70 Visit Texas Instruments Buy
    PCM2906BDB Texas Instruments Stereo USB CODEC with line out and S/PDIF, Bus-powered 28-SSOP -25 to 85 Visit Texas Instruments

    CXK* SONY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


    Original
    PDF 71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732

    Untitled

    Abstract: No abstract text available
    Text: Sony. CXK 58110O TM /YM IS Ö W 131072-word X 8-bit High Speed CMOS Static RAM D escription CXK58110OTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and CXK581100TM 32 pin TSOP Plastic CXK581100YM 32 pin TSOP (Plastic)


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    PDF 58110O CXK581100TM 131072-word CXK58110OTM/YM CXK581100YM CXK581100TM CXK581100VM CXK581100TM/YM-10L, -10LL CXK5811lative

    Untitled

    Abstract: No abstract text available
    Text: SONY« CXK 59290 M/TM -70L710U12L 32768-word x 9-bit High Speed CMOS Static RAM D escription CXK59290M 32 pin SOP Plastic The CXK59290M/TM is a 294912 bits high speed CMOS static RAM organized as 32768 words by 9 bits and operates from a single 5V supply. This device is


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    PDF -70L710U12L 32768-word CXK59290M CXK59290M/TM CXK59290TM CXK59290M/TM-70L CXK59290M/TM-10L CXK59290M/TM-12L 100ns 120ns

    Untitled

    Abstract: No abstract text available
    Text: SONY, CXK5971AP/AM/AJ 25/30/35 8192-word x 9-bit High Speed CMOS Static RAM Description CXK 5971A P CXK5971 AP/AM/AJ are 73,728 bits high speed 2 8 pin D IP P la s tic C M O S static RAMs organized as 8,192-word by 9-bit and operate from a single 5V supply. These devices are


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    PDF CXK5971AP/AM/AJ 8192-word CXK5971 192-word 25ns/30ns/35ns CXK5971AP/AW/AJ SQJ029- -0300-A

    NG42

    Abstract: No abstract text available
    Text: 5 18120 J/TM 12 SONY CXK B 65,536-word x 18-bit High-Speed Bi-CMOS Static RAM Description C XK5B18120J/TM are high speed 1Mbit Bi-CMOS sta tic RAMs orga nize d as 6 5 ,5 3 6 -w o rd s-b y-1 8 -b its. Operating on a single 3.3V supply these asynchronous ICs are suitable for use in high speed and low power


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    PDF 536-word 18-bit XK5B18120J/TM 1116mW CXK5B18120J 400mil, 44-pin CXK5B18120TM NG42

    CXK581020J

    Abstract: sony cxk581020j static ram 2015
    Text: CXK 581020 SP/J SONY 131072-word X -35/45/55 8-bit High Speed CMOS Static RAM Description CXK581020SP 32 pin DIP Plastic CXK581 0 2 0 S P / J are 1 3 1 ,0 7 2 -w o rd x 8 -b it high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications.


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    PDF CXK581020SP/J 131072-word CXK581 020SP/J 072-word 020SP/ 020SP/J-45 CXK581020SP/J-55 CXK581020J sony cxk581020j static ram 2015

    Untitled

    Abstract: No abstract text available
    Text: CXK 59289P/M SONY« 32,768-word x 9-bit High Speed CMOS Static RAM * un d er - 2 0/25 d e v e lo p m e n t D e sc rip tio n The static 9-bit. from CXK59289P 32 pin DIP Plastic C X K 5 9 2 8 9 P / M is a high speed CM OS R A M w hich consists of 32,768-word x


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    PDF CXK59289P/M 768-word 20ns/25ns CXK59289P/M-20 CXK59289P/M-25 400mW 350mW 300mil

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK5V81OOOATM -8 5 L L X /1 0 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data


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    PDF CXK5V81OOOATM 131072-word CXK5V81000ATM 131072-words CXK5V81 -85LLX 03fl23fi3 TSOP-32P-L01 TSOP032-P-0820-A

    8257A

    Abstract: 58257A
    Text: SONY. CXK58257ATM/AYM •12LB 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257ATM/AYM is a 256K bits, 32768 words by 8 bits, CMOS static RAM. Operating on a single 2.7 to 5.5V supply. It is suitable for portable and battery back-up systems which require extremely small package and low


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    PDF CXK58257ATM/AYM 32768-word CXK58257ATM/AYM CXK58257ATM CXK58257AYM CXK58257ATM: CXK58257AYM: 240ns 120ns 8257A 58257A

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK58258AP/AJ - 15720 / 25 / 35 ’ 32,768-word x 8-bit High Speed CMOS Static RAM *äniySo7lSTbie Description The C X K 5 8 2 5 8 A P /A J is a high speed CMOS static RAM which consists of 32,768-word x 8-bit. It operates at 15 / 2 0 / 2 5 / 3 5 n s access


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    PDF CXK58258AP/AJ CXK58258A 768-word 8258A 500mW 400mW

    CXK541000J-25

    Abstract: CXK541000J-30 SOJ032-P-0400-A
    Text: CXK541000J SONY. -25/30/35 Preliminary 262144-word x 4-bit High Speed CMOS Static RAM Description C X K 5 4 1 0 0 0 J is a 1048576 bits high speed C M O S static R A M organized a s 262144 w ords by 4 bits and operates from a single 5 V supply. T his device is suitable for use in high speed and low


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    PDF CXK541000J 262144-word CXK541000J-25 CXK541000J-30 350mW CXK541000J 32pin SCIJ-32P-01 SOJ032-P-0400-A

    CXK584000

    Abstract: No abstract text available
    Text: SONY. CXK584000TM/YM/M/P -55U70ua5L,0L -55LL/70LL/85LL/1 OLL 524288-word x 8-bit High Speed CMOS Static RAM D escription CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized


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    PDF CXK584000TM/YM/M/P -55LL/70LL/85LL/1 524288-word 55ns/110ns -55L/55LL 70ns/140ns -70L/70LL 85ns/170ns -85L/85LL -10L/10LL CXK584000

    1202S

    Abstract: No abstract text available
    Text: SONY C X K 1 2 2 S Digital Delay Line Description Package Outline The C X K 1 2 0 2 S is a digital line memory pertaining to 8-bit structure which employs silicon gate CM OS process. It can easily be used to realize compensation for dropout of VTR and used as a digital filter, noise reduction, etc.


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    PDF CXK1202S 1202S

    Untitled

    Abstract: No abstract text available
    Text: CXK59288P/J -15/20/25 SONY» 32768-word X 9-bit High Speed CMOS Static RAM Description The C X K 5 9 2 8 8 P / J is a high speed CMOS static RAM which consists of 32768-word x 9-bit. It operates at 15 n s / 2 0 n s / 2 5 n s access time from 5V single power supply.


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    PDF CXK59288P/J 32768-word 15ns/20ns/25ns CXK59288P/J-15 500mW CXK59288P/J-20 425mW CXK59288P/J-25

    cxk58256pm

    Abstract: CL 2181 ic CXK58256M CXK58256P gal3 CL 2181 CXK58256 DIP-28P-04
    Text: SONY CXK58256P/M 0 0 3 2 K-word X 8 bit High Speed CMOS Static RAM Package O utline Description The CXK58256P/M is a 262.144 bits high speed CMOS static RAM organized as 32 ,7 6 8 w ords by 8 bits and operates from a single 5V supply. The C X K 58256P /M is suitable fo r use in high


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    PDF CXK58256P/M 32K-word CXK58256P/M 50juW 100ns/120ns/1 -10U/12iyi5L cxk58256pm CL 2181 ic CXK58256M CXK58256P gal3 CL 2181 CXK58256 DIP-28P-04

    CXK1206AM

    Abstract: SONY CX CXK1206 lr2d CXK1206ATM
    Text: SONY. CXK1206AM/ATM Video Signal Field Memory D escription C XK 1206A M The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith bo th NTSC and PAL and o f s to rin g pictures fo r one 8-bit field w ith tw o chips, and is suitable as a m em ory fo r im proving


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    PDF CXK1206AM/ATM CXK1206ATM K1206AM CXK1206ATM 40Qrm Q4d-P-04CO CXK1206AM SONY CX CXK1206 lr2d

    2551 vn

    Abstract: CXK581120J-15 CXK581120J-12 CXK581120J-17 CXK581120J-20 924i sony aw 15
    Text: 5 4E » 6302303 SO N Y . O O tm S ñ T lb «SO N Y -12/15/20 CXK581120J PRELIMINARY 131,072-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM D ESC R IPTIO N SONY 7 C O R P/C O M PO N E N T PROPS CXK581120J 32 PIN SOJ PLASTIC T he C X K 581120J is a h ig h speed lM -b it CM OS sta tic RAM


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    PDF CXK581120J 072-WORD 12/15/20ns CXK581120J-12 CXK581120J-15 CXK581120J-20 CXK58U20J 2551 vn CXK581120J-17 924i sony aw 15

    5.1 sony

    Abstract: CXK58258
    Text: SONY» CXK58258P/SP -35/45/55 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 8 P /S P are 262,144 bits high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications. Organized as 3 2 ,7 6 8 w ords by 8 -b it, it operates from a


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    PDF CXK58258P/SP 32768-word CXK58258P/SP CXK58258P/SP-35 CXK58258P/SP-45 CXK58258P/SP-55 CXK58258P/SP-35, 250mW 600mil 5.1 sony CXK58258

    Untitled

    Abstract: No abstract text available
    Text: C X K 58110OTM/YM -12LB SONY 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. CXK581100TM 32 pin T SO P Plastic CXK581100YM 32 pin T SO P (Plastic)


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    PDF 58110OTM/YM -12LB 131072-word CXK581100TM/YM CXK581100TM CXK581100YM CXK581100TM: CXK581100YM: CXK581

    CXK54256P-35

    Abstract: CXK54256P-45 CXK54256P-55 sony cmos 117
    Text: CXK54256P 35/45/55 SONY« 65,536-word X 4-bit High Speed CMOS Static RAM Description CXK54256P is a 2 6 2 ,1 4 4 bits high speed CMOS sta tic RAM organized as 65,536 w ords by 4 bits and operates from a single 5V supply. T his device is suitable fo r use in high speed


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    PDF CXK54256P 536-word CXK54256P CXK54256P-35 CXK54256P-45 CXK54256P-55 100mW 54256P 300mil CXK54256P-55 sony cmos 117

    CXK54256P-35

    Abstract: CXK54256P-45 CXK54256P-55 static ram 2015
    Text: CXK54256P 35/45/55 SONY« 65,536-word X 4-bit High Speed CMOS Static RAM Description C XK54256P is a 2 6 2 ,1 4 4 bits high speed CMOS sta tic RAM organized as 65,536 w ords by 4 bits and operates from a single 5V supply. This device is suitable fo r use in high speed


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    PDF CXK54256P 536-word CXK54256P-35 CXK54256P-45 CXK54256P-55 100mW 54256P 300mil CXK54256P-55 static ram 2015

    Untitled

    Abstract: No abstract text available
    Text: SONY. CXK58267AP/ASP/AM -70LU85Ll3^0LL/12LL 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 6 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w o rds by 8 b its and operates from a single 5V supply. The C X K 5 8 2 6 7 A P /A S P /A M 's tw o chip


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    PDF CXK58267AP/ASP/AM -70LU85Ll3 0LL/12LL 32768-word 100ns 120ns -70LV CXK58267AP/ASP/AM CXK58267AP XK58267ASP

    Untitled

    Abstract: No abstract text available
    Text: SONY. CXK58257AP/ASP/AM -70LU85LU10LL/12LL 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w ords by 8 bits and operates from a single 5V supply. T his device is suitable fo r use in high


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    PDF CXK58257AP/ASP/AM -70LU85LU10LL/12LL 32768-word 100ns 120ns 8257A XK58257AP CXK58257ASP 28pin OIP028-P-0300-A

    CXK581020J

    Abstract: No abstract text available
    Text: 54E D 0365303 D0D4fl34 11T MSONY «2.3* - / y CXK581020SP/J -35/45/55 SONY 131072-word x 8-bit High Speed CMOS Static RAM S O NY CORP/COMPONENT Description P ROD S C X K 5 8 1 02 0 S P 3 2 pin DIP Plastic C X K 5 8 1 0 2 0 S P /J are 1 3 1 ,0 7 2 -w o rd x 8 -b it


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    PDF D0D4fl34 CXK581020SP/J 131072-word CXK581020SP 072-word CXK581020SP/J-35 CXK581020SP/ CXK581020SP/J-55 CXK581020J