NEC D2732
Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256
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71C256
53C256
81C1000
71C1000
4C1024
81C4256
71C4256
4C4256
71C4400
4C4001
NEC D2732
41C1000
41256
6264 SRAM
44256 dram
NEC 2732
nec 4217400
814400
Texas Instruments eprom 2732
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Untitled
Abstract: No abstract text available
Text: Sony. CXK 58110O TM /YM IS Ö W 131072-word X 8-bit High Speed CMOS Static RAM D escription CXK58110OTM/YM is a 1M bits, 131072 words by 8 bits, CMOS static RAM. It is suitable for portable and CXK581100TM 32 pin TSOP Plastic CXK581100YM 32 pin TSOP (Plastic)
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58110O
CXK581100TM
131072-word
CXK58110OTM/YM
CXK581100YM
CXK581100TM
CXK581100VM
CXK581100TM/YM-10L,
-10LL
CXK5811lative
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Untitled
Abstract: No abstract text available
Text: SONY« CXK 59290 M/TM -70L710U12L 32768-word x 9-bit High Speed CMOS Static RAM D escription CXK59290M 32 pin SOP Plastic The CXK59290M/TM is a 294912 bits high speed CMOS static RAM organized as 32768 words by 9 bits and operates from a single 5V supply. This device is
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-70L710U12L
32768-word
CXK59290M
CXK59290M/TM
CXK59290TM
CXK59290M/TM-70L
CXK59290M/TM-10L
CXK59290M/TM-12L
100ns
120ns
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Untitled
Abstract: No abstract text available
Text: SONY, CXK5971AP/AM/AJ 25/30/35 8192-word x 9-bit High Speed CMOS Static RAM Description CXK 5971A P CXK5971 AP/AM/AJ are 73,728 bits high speed 2 8 pin D IP P la s tic C M O S static RAMs organized as 8,192-word by 9-bit and operate from a single 5V supply. These devices are
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CXK5971AP/AM/AJ
8192-word
CXK5971
192-word
25ns/30ns/35ns
CXK5971AP/AW/AJ
SQJ029-
-0300-A
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NG42
Abstract: No abstract text available
Text: 5 18120 J/TM 12 SONY CXK B 65,536-word x 18-bit High-Speed Bi-CMOS Static RAM Description C XK5B18120J/TM are high speed 1Mbit Bi-CMOS sta tic RAMs orga nize d as 6 5 ,5 3 6 -w o rd s-b y-1 8 -b its. Operating on a single 3.3V supply these asynchronous ICs are suitable for use in high speed and low power
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536-word
18-bit
XK5B18120J/TM
1116mW
CXK5B18120J
400mil,
44-pin
CXK5B18120TM
NG42
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CXK581020J
Abstract: sony cxk581020j static ram 2015
Text: CXK 581020 SP/J SONY 131072-word X -35/45/55 8-bit High Speed CMOS Static RAM Description CXK581020SP 32 pin DIP Plastic CXK581 0 2 0 S P / J are 1 3 1 ,0 7 2 -w o rd x 8 -b it high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications.
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CXK581020SP/J
131072-word
CXK581
020SP/J
072-word
020SP/
020SP/J-45
CXK581020SP/J-55
CXK581020J
sony cxk581020j
static ram 2015
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Untitled
Abstract: No abstract text available
Text: CXK 59289P/M SONY« 32,768-word x 9-bit High Speed CMOS Static RAM * un d er - 2 0/25 d e v e lo p m e n t D e sc rip tio n The static 9-bit. from CXK59289P 32 pin DIP Plastic C X K 5 9 2 8 9 P / M is a high speed CM OS R A M w hich consists of 32,768-word x
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CXK59289P/M
768-word
20ns/25ns
CXK59289P/M-20
CXK59289P/M-25
400mW
350mW
300mil
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Untitled
Abstract: No abstract text available
Text: SONY CXK5V81OOOATM -8 5 L L X /1 0 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data
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CXK5V81OOOATM
131072-word
CXK5V81000ATM
131072-words
CXK5V81
-85LLX
03fl23fi3
TSOP-32P-L01
TSOP032-P-0820-A
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8257A
Abstract: 58257A
Text: SONY. CXK58257ATM/AYM •12LB 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257ATM/AYM is a 256K bits, 32768 words by 8 bits, CMOS static RAM. Operating on a single 2.7 to 5.5V supply. It is suitable for portable and battery back-up systems which require extremely small package and low
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CXK58257ATM/AYM
32768-word
CXK58257ATM/AYM
CXK58257ATM
CXK58257AYM
CXK58257ATM:
CXK58257AYM:
240ns
120ns
8257A
58257A
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Untitled
Abstract: No abstract text available
Text: SONY CXK58258AP/AJ - 15720 / 25 / 35 ’ 32,768-word x 8-bit High Speed CMOS Static RAM *äniySo7lSTbie Description The C X K 5 8 2 5 8 A P /A J is a high speed CMOS static RAM which consists of 32,768-word x 8-bit. It operates at 15 / 2 0 / 2 5 / 3 5 n s access
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CXK58258AP/AJ
CXK58258A
768-word
8258A
500mW
400mW
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CXK541000J-25
Abstract: CXK541000J-30 SOJ032-P-0400-A
Text: CXK541000J SONY. -25/30/35 Preliminary 262144-word x 4-bit High Speed CMOS Static RAM Description C X K 5 4 1 0 0 0 J is a 1048576 bits high speed C M O S static R A M organized a s 262144 w ords by 4 bits and operates from a single 5 V supply. T his device is suitable for use in high speed and low
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CXK541000J
262144-word
CXK541000J-25
CXK541000J-30
350mW
CXK541000J
32pin
SCIJ-32P-01
SOJ032-P-0400-A
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CXK584000
Abstract: No abstract text available
Text: SONY. CXK584000TM/YM/M/P -55U70ua5L,0L -55LL/70LL/85LL/1 OLL 524288-word x 8-bit High Speed CMOS Static RAM D escription CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized
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CXK584000TM/YM/M/P
-55LL/70LL/85LL/1
524288-word
55ns/110ns
-55L/55LL
70ns/140ns
-70L/70LL
85ns/170ns
-85L/85LL
-10L/10LL
CXK584000
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1202S
Abstract: No abstract text available
Text: SONY C X K 1 2 2 S Digital Delay Line Description Package Outline The C X K 1 2 0 2 S is a digital line memory pertaining to 8-bit structure which employs silicon gate CM OS process. It can easily be used to realize compensation for dropout of VTR and used as a digital filter, noise reduction, etc.
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CXK1202S
1202S
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Untitled
Abstract: No abstract text available
Text: CXK59288P/J -15/20/25 SONY» 32768-word X 9-bit High Speed CMOS Static RAM Description The C X K 5 9 2 8 8 P / J is a high speed CMOS static RAM which consists of 32768-word x 9-bit. It operates at 15 n s / 2 0 n s / 2 5 n s access time from 5V single power supply.
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CXK59288P/J
32768-word
15ns/20ns/25ns
CXK59288P/J-15
500mW
CXK59288P/J-20
425mW
CXK59288P/J-25
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cxk58256pm
Abstract: CL 2181 ic CXK58256M CXK58256P gal3 CL 2181 CXK58256 DIP-28P-04
Text: SONY CXK58256P/M 0 0 3 2 K-word X 8 bit High Speed CMOS Static RAM Package O utline Description The CXK58256P/M is a 262.144 bits high speed CMOS static RAM organized as 32 ,7 6 8 w ords by 8 bits and operates from a single 5V supply. The C X K 58256P /M is suitable fo r use in high
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CXK58256P/M
32K-word
CXK58256P/M
50juW
100ns/120ns/1
-10U/12iyi5L
cxk58256pm
CL 2181 ic
CXK58256M
CXK58256P
gal3
CL 2181
CXK58256
DIP-28P-04
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CXK1206AM
Abstract: SONY CX CXK1206 lr2d CXK1206ATM
Text: SONY. CXK1206AM/ATM Video Signal Field Memory D escription C XK 1206A M The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith bo th NTSC and PAL and o f s to rin g pictures fo r one 8-bit field w ith tw o chips, and is suitable as a m em ory fo r im proving
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CXK1206AM/ATM
CXK1206ATM
K1206AM
CXK1206ATM
40Qrm
Q4d-P-04CO
CXK1206AM
SONY CX
CXK1206
lr2d
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2551 vn
Abstract: CXK581120J-15 CXK581120J-12 CXK581120J-17 CXK581120J-20 924i sony aw 15
Text: 5 4E » 6302303 SO N Y . O O tm S ñ T lb «SO N Y -12/15/20 CXK581120J PRELIMINARY 131,072-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM D ESC R IPTIO N SONY 7 C O R P/C O M PO N E N T PROPS CXK581120J 32 PIN SOJ PLASTIC T he C X K 581120J is a h ig h speed lM -b it CM OS sta tic RAM
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CXK581120J
072-WORD
12/15/20ns
CXK581120J-12
CXK581120J-15
CXK581120J-20
CXK58U20J
2551 vn
CXK581120J-17
924i
sony aw 15
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5.1 sony
Abstract: CXK58258
Text: SONY» CXK58258P/SP -35/45/55 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 8 P /S P are 262,144 bits high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications. Organized as 3 2 ,7 6 8 w ords by 8 -b it, it operates from a
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CXK58258P/SP
32768-word
CXK58258P/SP
CXK58258P/SP-35
CXK58258P/SP-45
CXK58258P/SP-55
CXK58258P/SP-35,
250mW
600mil
5.1 sony
CXK58258
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Untitled
Abstract: No abstract text available
Text: C X K 58110OTM/YM -12LB SONY 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. CXK581100TM 32 pin T SO P Plastic CXK581100YM 32 pin T SO P (Plastic)
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58110OTM/YM
-12LB
131072-word
CXK581100TM/YM
CXK581100TM
CXK581100YM
CXK581100TM:
CXK581100YM:
CXK581
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CXK54256P-35
Abstract: CXK54256P-45 CXK54256P-55 sony cmos 117
Text: CXK54256P 35/45/55 SONY« 65,536-word X 4-bit High Speed CMOS Static RAM Description CXK54256P is a 2 6 2 ,1 4 4 bits high speed CMOS sta tic RAM organized as 65,536 w ords by 4 bits and operates from a single 5V supply. T his device is suitable fo r use in high speed
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CXK54256P
536-word
CXK54256P
CXK54256P-35
CXK54256P-45
CXK54256P-55
100mW
54256P
300mil
CXK54256P-55
sony cmos 117
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CXK54256P-35
Abstract: CXK54256P-45 CXK54256P-55 static ram 2015
Text: CXK54256P 35/45/55 SONY« 65,536-word X 4-bit High Speed CMOS Static RAM Description C XK54256P is a 2 6 2 ,1 4 4 bits high speed CMOS sta tic RAM organized as 65,536 w ords by 4 bits and operates from a single 5V supply. This device is suitable fo r use in high speed
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CXK54256P
536-word
CXK54256P-35
CXK54256P-45
CXK54256P-55
100mW
54256P
300mil
CXK54256P-55
static ram 2015
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Untitled
Abstract: No abstract text available
Text: SONY. CXK58267AP/ASP/AM -70LU85Ll3^0LL/12LL 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 6 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w o rds by 8 b its and operates from a single 5V supply. The C X K 5 8 2 6 7 A P /A S P /A M 's tw o chip
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CXK58267AP/ASP/AM
-70LU85Ll3
0LL/12LL
32768-word
100ns
120ns
-70LV
CXK58267AP/ASP/AM
CXK58267AP
XK58267ASP
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Untitled
Abstract: No abstract text available
Text: SONY. CXK58257AP/ASP/AM -70LU85LU10LL/12LL 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w ords by 8 bits and operates from a single 5V supply. T his device is suitable fo r use in high
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CXK58257AP/ASP/AM
-70LU85LU10LL/12LL
32768-word
100ns
120ns
8257A
XK58257AP
CXK58257ASP
28pin
OIP028-P-0300-A
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CXK581020J
Abstract: No abstract text available
Text: 54E D 0365303 D0D4fl34 11T MSONY «2.3* - / y CXK581020SP/J -35/45/55 SONY 131072-word x 8-bit High Speed CMOS Static RAM S O NY CORP/COMPONENT Description P ROD S C X K 5 8 1 02 0 S P 3 2 pin DIP Plastic C X K 5 8 1 0 2 0 S P /J are 1 3 1 ,0 7 2 -w o rd x 8 -b it
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D0D4fl34
CXK581020SP/J
131072-word
CXK581020SP
072-word
CXK581020SP/J-35
CXK581020SP/
CXK581020SP/J-55
CXK581020J
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