d 132 smd diode
Abstract: No abstract text available
Text: RB400D is — K /D io d e s R B 400D JUxllaiEv a y 3* — K Silicon Epitaxial General Use Rectifying Schottky Barrier Diode • W fé \r5 È I2 !/Dimensions Unit : mm 7T&Z 1) (SMD)0 2) ra iB H ’P & 5 o 3) Bio eig i • Features 1) Surface mount type (SMD).
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RB400D
d 132 smd diode
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL1025B series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION
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PBYL1025B
OT404
OT404
PBYL1020B
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kvp smd
Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Text: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD
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600mA
220mA
200mA
175mA
150mA
100mA
500mA
kvp smd
kvp 42 DIODE
kvp 26A M
kvp diode
2005C
1.5 khp
SMD kvp
XMR5
0709a
PKF SMD
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f20lc
Abstract: SF5LC20U 20LC20u D200LC40B smd 10 20U D200L DIODE 542 SMD
Text: S u p e r F a s t R e c o v e r y D io d e s Twin Diodes Absolute Maximum Ratings Electrical Characteristics |R t rr 0j/ Vf Parts No. V rm lo Conditions I fsm max Conditions (max) [V] [A] If VR=VRM [°C] [A] [A] [mA] 132 125 81 61 45 [V] 0.98 1.3 0.98 1.3
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D5LC20U
DE5LC20U
SF5LC20U
D8LC20U
D8LD20U
D10LC20U
DF10LC20U
SF10LC20U
ITO-220
FTO-220
f20lc
SF5LC20U
20LC20u
D200LC40B
smd 10 20U
D200L
DIODE 542 SMD
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smd L6
Abstract: L6 smd 2FL20U SFSL60 L20U 2fl20u40 F20L60
Text: Super Fast Recovery Diodes High fre q u e n c y re c tify in g Electrical Characteristics Absolute Maximum Ratings V rm to tv ] [A ] 200 1 400 0.9 < M 1 F L ?O J 200 1. 1 D 1FL20U 200 1. 1 400 0.8 200 1.5 400 1.3 Type No. D 1N L2 0 U 40 40 D 2FL20U 40 200
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1FL20U
2FL20U
S2L20U
SF3L20U
S3L20U
E3L20U
E5L60
SFSL60
5F6L20U
SF8L60
smd L6
L6 smd
L20U
2fl20u40
F20L60
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f6l20u
Abstract: 1FK70 f6l20 f10l60 18smd 10L20U D6L20U D3L20 30L60
Text: Super Fast Recovery Diodes High fre q u e n c y re c tify in g S TO -220 Lead type Single Diodes FTO-220 A bsolute M axim um Ratings Type No. V rm lo Conditions Ifsm Electrical C haracteristics [A] [°C] [A] rc] [°C] 25 -5 5 -1 5 0 150 200 1 40 400 0.9
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D1NL20U
D1NF60
1FK70
1FL20U
D1FL20U
D2FL20U
S2L20U
D2L20U
D3L20U
S3L20U
f6l20u
f6l20
f10l60
18smd
10L20U
D6L20U
D3L20
30L60
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E-PACK
Abstract: smd 2f 1fp3
Text: S chottky Barrier Diodes High fre q u e n c y re c tify in g IT0-220 1F Single Diodes TO-220 Absolute Maximum Ratings Type No. V rm lo [V ] [A] D1NS4 40 6 ☆ M 1FP3 30 1.29 ☆ M 1 FS4 40 1.33 * 60 1.2 6 40 6 D1FP3 60 D1FS4A D2S4M 6M 30 40 ra 59* 60 D 1FS4
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IT0-220
AX057
AX078
02FS4
ITO-220
O-220
FTO-220
DE10P3
E-PACK
smd 2f
1fp3
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d 132 smd diode
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 DF20JC10 Unit-mm Weight 1.5g Typ 10.2 100V 20A Feature • SMD • <SlR=0.7mA • SMD • S iy R T È Î E iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG
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STO-220
DF20JC10
dio25
d 132 smd diode
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cd 40118
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA
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PBYR1045CTD
OT428
OT428
cd 40118
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m5946
Abstract: 3FS-4A 3FS4A
Text: Schottky Barrier Diodes High f r e q u e n c y r e c t if y in g IT 0 -2 2 0 1F Single Diodes T O -220 Electrical C haracteristics Absolute Maximum Ratings Cj qi 0ja m ax V r = V rm [m A ] (typ) (m ax) (max) [p F ] [• c / w ] [• c / w ] [tJ /W ] 0 .8
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AX057
AX078
02S4M
V77-2
m5946
3FS-4A
3FS4A
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Untitled
Abstract: No abstract text available
Text: Square ended SMD 500 mWatt Voidless zeners 1N6321US thru 1N6355US Hard GlassTungsten MELF "D" Package nJ - Applications Low noise zener diodes with hard glass tungsten, non-rolling SMD design. Able to replace less robust families like1N4099and 1N5530B. Forusein hostile environments and
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1N6321US
1N6355US
like1N4099and
1N5530B.
MIL-S-19500/533.
G0GG743
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10VTZ
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm DF10SC6 O UTLINE U n it-m m Package : STO-220 W e igh t 1.5g T y p u^háLÍ°-(M) 10.2 60 V 10A Feature * SMD < SM D ' T j= 1 5 0 °C 1 Tj= 150°C 1P rrs m 1 P rrs m R ating Main Use >X ' f ' y 1S w itc h in g R egulator
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DF10SC6
STO-220
10VTZ
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes High fre q u e n c y re c tify in g Absolute Maximum Ratings V rm to Conttns tv ] [A ] C-c] „ S1ZA S4 40 I .2 49* D 4 SC 6 M 60 4 40 5 Type No. . Electrical Characteristics Ifs m Tstg Tj Vf max [A ] C'C] C'C] [V ] 40 — 40 — 150
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S25SC6M
F25SC
S30SC4M
V74-I
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cd 40118
Abstract: d 132 smd code diode schottky diode cross reference
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1045CTD series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA
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PBYR1045CTD
OT428
OT428
PBYR1040CTD
cd 40118
d 132 smd code diode
schottky diode cross reference
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC4 Unit-mm Weight 0.326g Typ 40 V 10A Feature • SM D >SMD • Tj=150°C 1Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E 1 P r r s m Rating 1 High lo Rating -Small-PKG Main Use
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DE10SC4
15CTC
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR745B, PBYR745D series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance
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PBYR745B,
PBYR745D
PBYR745B
OT404
OT428
PBYR740D
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smd diode 949
Abstract: transistor SMD 361 C120T101 diode c05*10 varistor 60 volt C050T331 C050T4R7 varistors rfe transistor a 949 JMV0402C050T120
Text: MULTILAYER CHIP VARISTOR JMV C Series: SMD ESD & EMI MOV INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in
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C5BC01
C050T4R7
C050T100
C050T120
C050T150
C050T220
C050T390
C050T470
C050T560
C050T820
smd diode 949
transistor SMD 361
C120T101
diode c05*10
varistor 60 volt
C050T331
C050T4R7
varistors rfe
transistor a 949
JMV0402C050T120
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zener smd diode 101
Abstract: ZENER DIODE t2 201 Zener diode CZRC5348 CZRC5349 CZRC5350 CZRC5351 CZRC5352 CZRC5388 SMD DIODE 517
Text: COMCHIP Surface Mount Zener Diode SMD DIODE SPECIALIST CZRC5348 Thru CZRC5388 Voltage: 11 - 200 Volts Power: 5.0 Watts Features For surface mounted applications in order to optimize board space Low profile package Glass passivated junction Low inductance Built-in strain relief
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CZRC5348
CZRC5388
SMC/DO-214AB
-214AB
MIL-STD-750,
MDS0211013A
zener smd diode 101
ZENER DIODE t2
201 Zener diode
CZRC5349
CZRC5350
CZRC5351
CZRC5352
CZRC5388
SMD DIODE 517
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hm marking smd DIODE
Abstract: DF20JC10 TC121 SHINDENGEN DIODE DIODE marking VU
Text: Schottky Barrier Diode Twin Diode mnm DF20JC10 o u tlin e 100V 20A Feature • SM D • SMD • filR = 0 .7 m A • L o w lR =0.7m A • jw is æ ç ë c u ic < L ' • Resistance for thermal run-away • High lo Rating -Small-PKG • y -S P C .L C D t-^ ^
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DF20JC10
STO-220
J532-1)
hm marking smd DIODE
DF20JC10
TC121
SHINDENGEN DIODE
DIODE marking VU
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1N4148 SMD LL-34
Abstract: Diode smd 82T SMD 82T LTZ-MR15 SC-40 DO-34 ZENER da226u 1N4606 1N4148 LL-41 1SR35-100
Text: : t — K /D io d e s T .'f " j f - > • ? '£ '< i [ — K /S w itc h in g Diodes • ¡ S S É /t^ 'i *j 3 - 's * ? $ Part No. Cond. Package Page V r V V f (V) Max. I f (mA) 1SS353 80 1.2 100 USM 34 1SS354 50 1.2 100 USM 34 1SS355 35 1.2 100 USM 34 RLS-71
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1SS353
1SS354
1SS355
RLS-71
RLS-72
RLS-73
1SS41
1S2471
1S2472
1S2473
1N4148 SMD LL-34
Diode smd 82T
SMD 82T
LTZ-MR15
SC-40
DO-34 ZENER
da226u
1N4606
1N4148 LL-41
1SR35-100
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PF0040
Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919
Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices
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2SJ2-46
2SJ223
2SJ182
2SJ245
2SJ214
2SJ219
2SJ220
2SJ242
2SJ175
2SJ176
PF0040
2sk mosfet
pf0030 hitachi
2sj217
2SJ299
2sk mosfet rf power
2sk1299
2SJ214
2SJ295
2SK1919
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pt1017
Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253
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El00-KIT-ND
J200-KIT-ND
1600-KIT-ND
1601-KIT-ND
1602-KIT-ND
1603-KIT-ND
1604-KIT-ND
923000-I-ND
10514-ND
10522-ND
pt1017
mt 1389 vde
converter siemens modules GR 60 48V 120 A
SMD Code 12W SOT-23
600w 12V 230V Inverter schematic
mw 137 600g
PT1000 NTC TEMPERATURE CHART
smd 4pk
EPL1902S2C
67127490
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes BYV40E series ultrafast, FEATURES SYMBOL QUICK REFERENCE DATA V R = 150 V/ 200 V • Low forward volt drop • Fast switching • Soft recovery characteristic
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BYV40E
OT223
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BYV40
Abstract: SC18 SMD footprint design
Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,
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BYV40
OT223
SC18
SMD footprint design
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