Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    D 1413 TRANSISTOR Search Results

    D 1413 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 1413 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mPD780208

    Abstract: TV LED TCL 32F PD78P0208 uPD780208 delay line ms-26 TCL-10 P20P2 TCL25-TCL27 mPD78P0208GF-3BA
    Text: mPD780208 SUBSERIES 8-BIT SINGLE-CHIP MICROCOMPUTER PRELIMINARY mPD780204 mPD780205 mPD78P0208 1994 Document No. IEU-1413 (O. D. No. IEU-885) Date Published February 1995 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


    Original
    PDF mPD780208 mPD780204 mPD780205 mPD78P0208 IEU-1413 IEU-885) 16-bit TV LED TCL 32F PD78P0208 uPD780208 delay line ms-26 TCL-10 P20P2 TCL25-TCL27 mPD78P0208GF-3BA

    CI 4096

    Abstract: MAX12005 MAX12001 MAX1200 MAX1200ACMH MAX1200AEMH MAX1200BCMH MAX1200BEMH MAX1201 MAX1205
    Text: 19-1413; Rev 0; 12/98 +5V単一電源1Msps、16ビット セルフキャリブレーションADC 概要 _ 特長 _ MAX1200は最大変換レート1Mspsの16ビットモノリ シックA/Dコンバータ ADC です。このCMOS集積回路


    Original
    PDF 5V1Msps16 MAX12001Msps16 MAX1200 161Msps SFDR91dB 100kHz) 273mW MAX1205 MAX1201 MAX1200ACMH CI 4096 MAX12005 MAX12001 MAX1200ACMH MAX1200AEMH MAX1200BCMH MAX1200BEMH

    transistor K 1413

    Abstract: D 1413 transistor package TO8-16 transistor a 1413 mil-std-202 method 112
    Text: PRECISION BULK METAL  FOIL TECHNOLOGY TO - HERMETIC NETWORK SERIES Transistor Outline Hermetic Resistor Networks FEATURES •Resistance Range: 5Ω to 80KΩ •Tolerance Tightest : Absolute to ±0.005%, Match to 0.002% •LoadLife Stability: ±0.025% Max∆R under full rated power @+70°C for 2000 hours


    Original
    PDF 50ppm/year MIL-Std-202, 5x10-7 MIL-Std-1276, K-22-A3 transistor K 1413 D 1413 transistor package TO8-16 transistor a 1413 mil-std-202 method 112

    203B

    Abstract: No abstract text available
    Text: HARRIS S E MI C O N D SECTOR E7E D H 43QSS71 OGEGSS4 7 HIKAS Power RCA9203A, RCA9203B 1413 • T '3 3 - 2 ^ rile Number 4-Ampere N -P -N Darlington Power Transistors


    OCR Scan
    PDF 43QSS71 RCA9203A, RCA9203B TQ-220AB 92CS-3S326 92CS-3532? 12CS-JJJSO 203B

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CO R P 12 E D | 7m U7h 0003071 ~T~lS'tn- o~l CMOS LSI 1413 D TM F/P U LSE Sw itchable Dialer The LC7363f7363M are DTMF/ODTPUT-PULSE dialer CMOS LSIs with redial function for use in. pushbutton telephones. The LC7363 is packaged in a 22-pin shrink


    OCR Scan
    PDF LC7363f 7363M LC7363 22-pin LC7363M 30-pin 58MHz) 7363M i707ti

    2SC1413

    Abstract: c 1413 a 2sc1413a 1413A
    Text: 2SC1413, 2SC1413A L 2SC 1413,1413A NPN POWER TRANSISTORS High Voltage Power Switching and TV Horizontal Deflection Output Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22.22 8,50 6.35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5.72 5.20 16,64 17,15 11,15 12,25


    OCR Scan
    PDF 2SC1413, 2SC1413A 2SC1413 c 1413 a 2sc1413a 1413A

    transistor K 1413

    Abstract: 1412D 1411d D 1413 transistor C1413BD 1413B 1416P ULN-2 1413BP MC 1413P
    Text: MC1411,B MC1412,B MC1413,B MC1416,B MOTOROLA M SEM ICO N D U CTO R TECHNICAL DATA HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS PERIPHERAL DRIVER ARRAYS T h e s e v e n N P N D a r lin g t o n c o n n e c t e d t r a n s i s t o r s in th e s e a r r a y s


    OCR Scan
    PDF MC1411 MC1412 MC1413 MC1416 transistor K 1413 1412D 1411d D 1413 transistor C1413BD 1413B 1416P ULN-2 1413BP MC 1413P

    MMT75

    Abstract: MMT76 9.1 V
    Text: MOTOROLA SC 6367255 -CDIODES/OPTO} MOTOROLA SC 34 b3b75S5 DIODES/OPTO 34C 0030204 38204 D MICRO-T (continued) MMT75 MMT76 — PNP — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdenslty packaging is required.


    OCR Scan
    PDF b3b75SS MMT75 MMT76 MMT75-PNP MMT75 MMT76 9.1 V

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC 6367255 34 -CDIODES/OPTO} MOTOROLA SC b3b75S5 0030204 7 DIODES/OPTO 34C 38204 D MICRO-T (continued) MMT75 — PNP MMT76 — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdensity packaging is required.


    OCR Scan
    PDF b3b75S5 MMT75 MMT76

    D 1413 transistor

    Abstract: transistor a 1413 pnp DARLINGTON TRANSISTOR ARRAY STA434A STA471 high hfe transistor sib1044d npn 8 transistor array Transistor H03
    Text: Surface Mount Transistor Arrays SD Series PNP darlington transistor array SDA01 -6 0 15.16 13 .1 4 11.12 Fh : 4 kU typ 15,16 SDC01 in I R 2 J l OOütyp 13^14 3 -. 9, 10 |_ 11.12 5o f . ( — 2.5A pulse) 2000 to 12000 — 1.4 max o Relays 0 S olenoids j 9, 10


    OCR Scan
    PDF SDA01 STA472A) SDC01 STA412A) SDC02 5A100ns 4ki21yp STA434A) IB1044D SDI01 D 1413 transistor transistor a 1413 pnp DARLINGTON TRANSISTOR ARRAY STA434A STA471 high hfe transistor sib1044d npn 8 transistor array Transistor H03

    2SD2133

    Abstract: 2SB1413
    Text: Power Transistors 2SD2133 2SD2133 Silicon NPN Epitaxial Planar Type • P a c k a g e D im e n s io n s A F P o w e r A m p lifie r, D riv e r C o m p le m e n ta ry P a ir w ith 2 S B 1 4 1 3 ■ F e a tu re s • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e V cec^ d


    OCR Scan
    PDF 2SD2133 2SB1413 2SD2133 2SB1413

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2133 2SD2133 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Power Amplifier, Driver Complementary Pair with 2SB1413 ■ Features U n it : mm • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e V cecho • 15W o u tp u t in co m p le m e n ta ry p air w ith 2SB 1413


    OCR Scan
    PDF 2SD2133 2SB1413 bT3Efl52

    2N404

    Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
    Text: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240


    OCR Scan
    PDF 2N43A' 2N525. 2N44A 2N524. 2N188A 34-6S 2N508, 2N1175 2N1413 2N241A 2N404 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924

    D 1413 transistor

    Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
    Text: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249


    OCR Scan
    PDF 16-Lead 14-LeadDIP 16-LeadDIP 256-Bit 64-Blt NTE74190 NTE74LS190 D 1413 transistor NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74LS190 5.1 diagram NTE74

    D 1413 transistor

    Abstract: k 1413 FET D 1414 transistor transistor a 1413 transistor K 1413
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHN1018 SYMBOL FEATURES QUICK REFERENCE DATA • 'Trench' technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance


    OCR Scan
    PDF PHN1018 PHN1018 lo100 D 1413 transistor k 1413 FET D 1414 transistor transistor a 1413 transistor K 1413

    BUW32

    Abstract: BUW132 BUW132H BUW132A IEC134 L100 132h
    Text: bbS3T3i DEVELOPMENT DATA c ia n c ia i i • BUW132 SERIES' This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER PHILIPS/DISCRETE ESE D ^ T -S 3 -/5 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast


    OCR Scan
    PDF BUW132 T-13-/S BUW132H kfa53Ã T-33-13 7Z21439 BUW32 BUW132A IEC134 L100 132h

    P77-P70

    Abstract: No abstract text available
    Text: Section 14 Electrical Specifications 14.1 Absolute Maximum Ratings Table 14-1 lists the absolute maximum ratings. Table 14-1. Absolute Maximum Ratings Preliminary Item Symbol Rating Unit Supply voltage Vcc -0 .3 to +7.0 V Vpp -0 .3 to +13.5 V Programming voltage


    OCR Scan
    PDF DD557Tb 44Tb2G4 P77-P70

    Untitled

    Abstract: No abstract text available
    Text: B Transistor Arrays SD Type No. 2 Ri R 20 4 ' *f 1 S D A 01 Voltage Ratings <V) Equivalent Circuit t * r 6 ' „-T . 3* r * ; r r Vce(Mi' and other Functions/Appiications (V) P N P D a rlin g to n tra n s is to r a rra y i '• 13)14 hFE and other 8 1 „* 1*


    OCR Scan
    PDF 200Utyp

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic Power Transistors PNP Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • DC Current Gain Specified up to 8.0 Amperes at Temperature


    OCR Scan
    PDF MJW21192/D MJW21192 O-247AE MJW21191 340K-03 O-247AE)

    655E-6

    Abstract: fp45n ppm pspice 136E3 518E-7
    Text: H A R R RFG45N06 RFP45N06 I S S E M I C O N D U C T O R January 1994 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging JEDEC TO-220AB TOP VIEW • 45A,60V • rDS(ON) ~ 0.028U • Temperature Compensating PSPICE Model


    OCR Scan
    PDF RFG45N06 RFP45N06 O-220AB O-247 RFG45N06, FP45N06 15E-5) 25E-9 1E-30 12E-3 655E-6 fp45n ppm pspice 136E3 518E-7

    EP 1408

    Abstract: 2SA745 2SA755 2SA748 2SA751 2SA752 2SA754 2SC1391
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan
    PDF 700MHz, Tc-25 100Hz, 2SA754 2SA755 EP 1408 2SA745 2SA755 2SA748 2SA751 2SA752 2SA754 2SC1391

    2SD1397

    Abstract: 2SC2271 transistor 2SC2271 2S01397 ic 30359
    Text: SANYO SEMICONDUCTOR CÔRP ISE D I 7 ^ 707 ^ 000SD7S T ' 3 3 - / 3 2SD1397« N PN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1223C Features: . High breakdown voltage and high reliability.


    OCR Scan
    PDF 000SD7S 2SD1397« 1223C IS-126 1S-126A IS-20MA 2SD1397 2SC2271 transistor 2SC2271 2S01397 ic 30359

    2N19A

    Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
    Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^


    OCR Scan
    PDF 2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924

    i354

    Abstract: 2N7222 IRFM440 IRFM440D i-354
    Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International


    OCR Scan
    PDF IRFM440 MIL-S-1S500/596] IRFM440D IRFM440U O-254 MIL-S-19B00 14A551455 i354 2N7222 IRFM440 i-354