mPD780208
Abstract: TV LED TCL 32F PD78P0208 uPD780208 delay line ms-26 TCL-10 P20P2 TCL25-TCL27 mPD78P0208GF-3BA
Text: mPD780208 SUBSERIES 8-BIT SINGLE-CHIP MICROCOMPUTER PRELIMINARY mPD780204 mPD780205 mPD78P0208 1994 Document No. IEU-1413 (O. D. No. IEU-885) Date Published February 1995 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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mPD780208
mPD780204
mPD780205
mPD78P0208
IEU-1413
IEU-885)
16-bit
TV LED TCL 32F
PD78P0208
uPD780208
delay line ms-26
TCL-10
P20P2
TCL25-TCL27
mPD78P0208GF-3BA
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CI 4096
Abstract: MAX12005 MAX12001 MAX1200 MAX1200ACMH MAX1200AEMH MAX1200BCMH MAX1200BEMH MAX1201 MAX1205
Text: 19-1413; Rev 0; 12/98 +5V単一電源1Msps、16ビット セルフキャリブレーションADC 概要 _ 特長 _ MAX1200は最大変換レート1Mspsの16ビットモノリ シックA/Dコンバータ ADC です。このCMOS集積回路
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5V1Msps16
MAX12001Msps16
MAX1200
161Msps
SFDR91dB
100kHz)
273mW
MAX1205
MAX1201
MAX1200ACMH
CI 4096
MAX12005
MAX12001
MAX1200ACMH
MAX1200AEMH
MAX1200BCMH
MAX1200BEMH
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transistor K 1413
Abstract: D 1413 transistor package TO8-16 transistor a 1413 mil-std-202 method 112
Text: PRECISION BULK METAL FOIL TECHNOLOGY TO - HERMETIC NETWORK SERIES Transistor Outline Hermetic Resistor Networks FEATURES •Resistance Range: 5Ω to 80KΩ •Tolerance Tightest : Absolute to ±0.005%, Match to 0.002% •LoadLife Stability: ±0.025% Max∆R under full rated power @+70°C for 2000 hours
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50ppm/year
MIL-Std-202,
5x10-7
MIL-Std-1276,
K-22-A3
transistor K 1413
D 1413 transistor
package TO8-16
transistor a 1413
mil-std-202 method 112
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203B
Abstract: No abstract text available
Text: HARRIS S E MI C O N D SECTOR E7E D H 43QSS71 OGEGSS4 7 HIKAS Power RCA9203A, RCA9203B 1413 • T '3 3 - 2 ^ rile Number 4-Ampere N -P -N Darlington Power Transistors
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43QSS71
RCA9203A,
RCA9203B
TQ-220AB
92CS-3S326
92CS-3532?
12CS-JJJSO
203B
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CO R P 12 E D | 7m U7h 0003071 ~T~lS'tn- o~l CMOS LSI 1413 D TM F/P U LSE Sw itchable Dialer The LC7363f7363M are DTMF/ODTPUT-PULSE dialer CMOS LSIs with redial function for use in. pushbutton telephones. The LC7363 is packaged in a 22-pin shrink
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LC7363f
7363M
LC7363
22-pin
LC7363M
30-pin
58MHz)
7363M
i707ti
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2SC1413
Abstract: c 1413 a 2sc1413a 1413A
Text: 2SC1413, 2SC1413A L 2SC 1413,1413A NPN POWER TRANSISTORS High Voltage Power Switching and TV Horizontal Deflection Output Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22.22 8,50 6.35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5.72 5.20 16,64 17,15 11,15 12,25
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2SC1413,
2SC1413A
2SC1413
c 1413 a
2sc1413a
1413A
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transistor K 1413
Abstract: 1412D 1411d D 1413 transistor C1413BD 1413B 1416P ULN-2 1413BP MC 1413P
Text: MC1411,B MC1412,B MC1413,B MC1416,B MOTOROLA M SEM ICO N D U CTO R TECHNICAL DATA HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS PERIPHERAL DRIVER ARRAYS T h e s e v e n N P N D a r lin g t o n c o n n e c t e d t r a n s i s t o r s in th e s e a r r a y s
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MC1411
MC1412
MC1413
MC1416
transistor K 1413
1412D
1411d
D 1413 transistor
C1413BD
1413B
1416P
ULN-2
1413BP
MC 1413P
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MMT75
Abstract: MMT76 9.1 V
Text: MOTOROLA SC 6367255 -CDIODES/OPTO} MOTOROLA SC 34 b3b75S5 DIODES/OPTO 34C 0030204 38204 D MICRO-T (continued) MMT75 MMT76 — PNP — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdenslty packaging is required.
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b3b75SS
MMT75
MMT76
MMT75-PNP
MMT75
MMT76
9.1 V
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC 6367255 34 -CDIODES/OPTO} MOTOROLA SC b3b75S5 0030204 7 DIODES/OPTO 34C 38204 D MICRO-T (continued) MMT75 — PNP MMT76 — NPN GENERAL PURPOSE TRANSISTORS • designed for general-purpose switching and amplifier applications and for complementary circuitry where highdensity packaging is required.
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b3b75S5
MMT75
MMT76
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D 1413 transistor
Abstract: transistor a 1413 pnp DARLINGTON TRANSISTOR ARRAY STA434A STA471 high hfe transistor sib1044d npn 8 transistor array Transistor H03
Text: Surface Mount Transistor Arrays SD Series PNP darlington transistor array SDA01 -6 0 15.16 13 .1 4 11.12 Fh : 4 kU typ 15,16 SDC01 in I R 2 J l OOütyp 13^14 3 -. 9, 10 |_ 11.12 5o f . ( — 2.5A pulse) 2000 to 12000 — 1.4 max o Relays 0 S olenoids j 9, 10
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SDA01
STA472A)
SDC01
STA412A)
SDC02
5A100ns
4ki21yp
STA434A)
IB1044D
SDI01
D 1413 transistor
transistor a 1413
pnp DARLINGTON TRANSISTOR ARRAY
STA434A
STA471
high hfe transistor
sib1044d
npn 8 transistor array
Transistor H03
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2SD2133
Abstract: 2SB1413
Text: Power Transistors 2SD2133 2SD2133 Silicon NPN Epitaxial Planar Type • P a c k a g e D im e n s io n s A F P o w e r A m p lifie r, D riv e r C o m p le m e n ta ry P a ir w ith 2 S B 1 4 1 3 ■ F e a tu re s • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e V cec^ d
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2SD2133
2SB1413
2SD2133
2SB1413
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2133 2SD2133 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Power Amplifier, Driver Complementary Pair with 2SB1413 ■ Features U n it : mm • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e V cecho • 15W o u tp u t in co m p le m e n ta ry p air w ith 2SB 1413
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2SD2133
2SB1413
bT3Efl52
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2N404
Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
Text: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240
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2N43A'
2N525.
2N44A
2N524.
2N188A
34-6S
2N508,
2N1175
2N1413
2N241A
2N404
2N508
2N414 same
2N1305
2N1415
2N525
2N527 GE
2N526
2N396
2N1924
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D 1413 transistor
Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
Text: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249
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16-Lead
14-LeadDIP
16-LeadDIP
256-Bit
64-Blt
NTE74190
NTE74LS190
D 1413 transistor
NTE74191
transistor K 1413
32 bit carry select adder code
transistor a 1413
NTE74LS191
NTE74LS190
5.1 diagram
NTE74
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D 1413 transistor
Abstract: k 1413 FET D 1414 transistor transistor a 1413 transistor K 1413
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHN1018 SYMBOL FEATURES QUICK REFERENCE DATA • 'Trench' technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHN1018
PHN1018
lo100
D 1413 transistor
k 1413 FET
D 1414 transistor
transistor a 1413
transistor K 1413
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BUW32
Abstract: BUW132 BUW132H BUW132A IEC134 L100 132h
Text: bbS3T3i DEVELOPMENT DATA c ia n c ia i i • BUW132 SERIES' This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER PHILIPS/DISCRETE ESE D ^ T -S 3 -/5 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast
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BUW132
T-13-/S
BUW132H
kfa53Ã
T-33-13
7Z21439
BUW32
BUW132A
IEC134
L100
132h
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P77-P70
Abstract: No abstract text available
Text: Section 14 Electrical Specifications 14.1 Absolute Maximum Ratings Table 14-1 lists the absolute maximum ratings. Table 14-1. Absolute Maximum Ratings Preliminary Item Symbol Rating Unit Supply voltage Vcc -0 .3 to +7.0 V Vpp -0 .3 to +13.5 V Programming voltage
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DD557Tb
44Tb2G4
P77-P70
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Untitled
Abstract: No abstract text available
Text: B Transistor Arrays SD Type No. 2 Ri R 20 4 ' *f 1 S D A 01 Voltage Ratings <V) Equivalent Circuit t * r 6 ' „-T . 3* r * ; r r Vce(Mi' and other Functions/Appiications (V) P N P D a rlin g to n tra n s is to r a rra y i '• 13)14 hFE and other 8 1 „* 1*
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200Utyp
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic Power Transistors PNP Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • DC Current Gain Specified up to 8.0 Amperes at Temperature
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MJW21192/D
MJW21192
O-247AE
MJW21191
340K-03
O-247AE)
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655E-6
Abstract: fp45n ppm pspice 136E3 518E-7
Text: H A R R RFG45N06 RFP45N06 I S S E M I C O N D U C T O R January 1994 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging JEDEC TO-220AB TOP VIEW • 45A,60V • rDS(ON) ~ 0.028U • Temperature Compensating PSPICE Model
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RFG45N06
RFP45N06
O-220AB
O-247
RFG45N06,
FP45N06
15E-5)
25E-9
1E-30
12E-3
655E-6
fp45n
ppm pspice
136E3
518E-7
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EP 1408
Abstract: 2SA745 2SA755 2SA748 2SA751 2SA752 2SA754 2SC1391
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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700MHz,
Tc-25
100Hz,
2SA754
2SA755
EP 1408
2SA745
2SA755
2SA748
2SA751
2SA752
2SA754
2SC1391
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2SD1397
Abstract: 2SC2271 transistor 2SC2271 2S01397 ic 30359
Text: SANYO SEMICONDUCTOR CÔRP ISE D I 7 ^ 707 ^ 000SD7S T ' 3 3 - / 3 2SD1397« N PN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1223C Features: . High breakdown voltage and high reliability.
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000SD7S
2SD1397«
1223C
IS-126
1S-126A
IS-20MA
2SD1397
2SC2271
transistor 2SC2271
2S01397
ic 30359
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2N19A
Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^
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2K43A
2N44A
2Nto37
2N18M
2N109?
2N169
2N3427
2N662
2N1008
2N1008B
2N19A
2N1310
2n1408
2N1305
2N1100
2N404 transistor
npn germanium
2N1378
2N1924
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i354
Abstract: 2N7222 IRFM440 IRFM440D i-354
Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International
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IRFM440
MIL-S-1S500/596]
IRFM440D
IRFM440U
O-254
MIL-S-19B00
14A551455
i354
2N7222
IRFM440
i-354
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