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    D 1877 TRANSISTOR Search Results

    D 1877 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    D 1877 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TL170C

    Abstract: TL170 L70C tesla switch Tesla sensor ERO Electronic irf540 TTL tesla NZ 70 tl170 hall tl170 hall effect
    Text: TL170C SIUCON HAU-EFFECT SWITCH 0 3 4 0 0 , D E C E M B E R 1877. R fV tS C O A P M L 1 0 M • Magnetfc-FWd Sensing Hall-Effect Input • On-Off Hysteresis • Small SI*« • Solid-State Technology • Open-Coiector Output description The T L17 0C is s low-cost magnetteal ly operated


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    TL170C TL170C TL170 SS6012 L70C tesla switch Tesla sensor ERO Electronic irf540 TTL tesla NZ 70 tl170 hall tl170 hall effect PDF

    23A18

    Abstract: No abstract text available
    Text: Low Saturation Voltage Switching Transistors E-pack SMD E-pack (Lead type) ITO-220 Bipolar transistors HSV series Bipolar transistors Absolute Maximum Ratings Type No. Electrical Characteristics VcEO VcBO VcEO V ebo Ic Ib Pt Tstg Tj [V] [V] [V ] [A ] [A ]


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    ITO-220 23A1876 SC4978 ITO-220 23A18 PDF

    SM 4151

    Abstract: 2sc497
    Text: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo


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    ITO-220 2SA1795 2SC4668 P1880 2SC4978 Fig78-3 SM 4151 2sc497 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Saturation Voltage Switching Transistors E-pack S M D E-pack (Lead type) ITO-220 Bipolar transistors Absolute Maximum Ratings Electrical Characteristics VCEO h fE (sus) (min) [V ] (min) V cE V be 0jc fi too ts tf (sat) (sat) (max) (max) (max) (typ) (max) (max) (max)


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    ITO-220 2SA1795 Fig79-3 2SA1876 2SC4978 ITO-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40


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    2SA1795 2SC4668 STO-220 PDF

    2sa1876

    Abstract: No abstract text available
    Text: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]


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    2SA1795 2SC4668 2SA1876 2SC4978 Fig79-3 PDF

    2SC466

    Abstract: No abstract text available
    Text: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E fA J Absolute Maximum Ratings Electrical Characteristics VCEO V e bo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c] C-c] [V ] No. 2SA179S 1790 1876 1877 2SC466& 1 4666 4878 4876 —5


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    2SA179S 2SC466& 2SK1861 2SK248Q STO-220 2SC466 PDF

    cl 740

    Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
    Text: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES


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    PH1600-6 Sb4250S 00DDS71 1600MHZ 21-Z12 470pF 015uF cl 740 tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600 PDF

    e-pack

    Abstract: 2SK1861 2SK1195 F05B23VR
    Text: Bipolar transistors Absolute Maximum Ratings Type No. lliliM S lii» I ä ä S ä 1876 È èÊ ë ÊÊÈîM iÎ ilïlilÈ V cbo VCEO V ebo Ic Ib Pt Tstg Ti sus (min) [V ] [V ] [V ] [A ] [A ] [W ] C-c] [°G ] [V ] -6 0 iÎ ï — 5 -4 0 L -8 0 60 7 40 7 100


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    STO-220 D005172 e-pack 2SK1861 2SK1195 F05B23VR PDF

    smd transistor P2D

    Abstract: p2d smd smd code p2d PMBTA92 smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE
    Text: • bb53'ì31 □□2 Sa ciö 12Ö ■ APX N AMER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E T> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.


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    PMBTA92 PMBTA93 smd transistor P2D p2d smd smd code p2d smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3^31 DDaSa^fi 126 • APX N AUER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E » 7 V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.


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    PMBTA92 PMBTA93 PDF

    TO-92variant

    Abstract: No abstract text available
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)


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    OT54variant O-92variant) O-220AB) OT96-1 OT137-1 T0-220 OT186A O-220) OT223 OT226 TO-92variant PDF

    SGSP256

    Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
    Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


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    SGSP154 SGSP254/255/258 SGSP354/355/356 50V/400V SGSP254 SGSP354 OT-82 O-220 SGSP155 SGSP256 SGSP356 SP156 PDF

    2SC1871

    Abstract: n 1895 1878 TRANSISTOR 2SA893
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    frc-25 2SC1871 n 1895 1878 TRANSISTOR 2SA893 PDF

    H0A1877

    Abstract: No abstract text available
    Text: H 0A 1877 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide operating temperature range -55“C to +100”C • 0.50 in.(12.7 mm) high optical axis position • 0.375 in.(9.52 mm) slot width DESCRIPTION The HOA1877 series consists of an infrared emitting


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    HOA1877 HOA1877-001, HOA1877-003) SE1450, SD1440, SD1410 HOA1877 H0A1877 PDF

    H0A1877

    Abstract: HOA1877-003 LC60
    Text: H 0A 1877 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide operating temperature range -55°C to +100°C • 0.50 in.(12.7 mm) high optical axis position • 0.375 in. (9.52 mm) slot width INFRA-47.TIF DESCRIPTION


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    H0A1877 HOA1877 HOA1877-001, HOA1877-003) SE1450, SD1440, SD1410. 0D22bflT HOA1877-003 LC60 PDF

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


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    MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi PDF

    SN74251

    Abstract: sn74ls251n
    Text: SN54251, SN54LS251 SN54S251, SN74251, SN74LS251, TIM9905 , SN74S251 DATA SELECTORS/MULTIPLEXERS WITH 3-STATE OUTPUTS SDLS085 – DECEMBER 1972 – REVISED MARCH 1988 Copyright  1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date.


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    SN54251, SN54LS251 SN54S251, SN74251, SN74LS251, TIM9905) SN74S251 SDLS085 SN74251 sn74ls251n PDF

    Untitled

    Abstract: No abstract text available
    Text: {Sì H A R R IS CDP1877 S E M I C O N D U C T O R Q 7 7 ^ ^ Programmable Interrupt Controller PIC February 1992 Features Description • Compatible with CDP1800 Series The CDP1877 and CDP1877C are programmable 8-level interrupt control­ lers designed for use in CDP1800 series microprocessor systems. They


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    CDP1877 CDP1800 CDP1877 CDP1877C P1877 CDP1877. PDF

    PowerMOS Transistors

    Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)


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    OT54variant O-92variant) O-220AB) OT96-1 OT137-1 OT186 O-220 OT186A O-220) OT223 PowerMOS Transistors 075E05 MS-012AA SO24 SSOP16 SSOP24 PDF

    BPSK MODULATORS raised cosine

    Abstract: Minimum shift keying modulator "AN-899"
    Text: AN-899 Operating and Evaluating Quadrature Modulators for Personal Communication Systems National Semiconductor Application Note 899 Wireless Communications ABSTRACT In comparison, for a quadrature modulator information is modulated onto a carrier with full freedom to manipulate the


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    AN-899 DCS1800) PCS-1900) AN-884, BPSK MODULATORS raised cosine Minimum shift keying modulator "AN-899" PDF

    Untitled

    Abstract: No abstract text available
    Text: C M O S LSI ISA\YO LC33864P-80, M-70/80/10 512 K 65536 w ords x 8 bits P seudo-S R A M Overview The LC33864 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized as 65536 words x 8 bits. By using memory cells each


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    EN4701A LC33864P-80, M-70/80/10 LC33864 32-pin 0017bfl PDF

    c4460

    Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
    Text: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4


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    1503/C 1565/C 1574/C 1590/C 1616/C 1654/C C3820, 1782/C B1235/D C3151 c4460 d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895 PDF

    Ericsson AB PGR 20312

    Abstract: DFB ea InGaAs APD, 10 Gb/s, -30 dBm 20312 pgr optical supervisory channel 10 gb laser diode Ea 1530 A mini link ericsson Ericsson Power Modules stm-64 dfb
    Text: Ericsson Microelectronics Optoelectronic Products Ericsson is a world-leading supplier in the fast growing and dynamic telecommunications and data communications industry; offering advanced solutions for mobile and fixed networks and terminals. Our products and solutions meet communications needs in the home and


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    SE-164 Ericsson AB PGR 20312 DFB ea InGaAs APD, 10 Gb/s, -30 dBm 20312 pgr optical supervisory channel 10 gb laser diode Ea 1530 A mini link ericsson Ericsson Power Modules stm-64 dfb PDF