2N3467
Abstract: 2N3467L 2N3468 2N3468L 2N3647 2N3648
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/348E 25 July 1999 SUPERSEDING MIL-S-19500/348D 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
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MIL-PRF-19500/348E
MIL-S-19500/348D
2N3467,
2N3467L,
2N3468,
2N3468L,
MIL-PRF-19500.
2N3467
2N3467L
2N3468
2N3468L
2N3647
2N3648
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2N4416A JANTX
Abstract: 2N4416A JANTXV 428F marking 2N4416AUB 2N4416A JANTXV 2n4416A
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 August 2006. INCH-POUND MIL-PRF-19500/428G 16 May 2006 SUPERSEDING MIL-PRF-19500/428F 25 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON,
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MIL-PRF-19500/428G
MIL-PRF-19500/428F
2N4416A
2N4416AUB,
MIL-PRF-19500.
2N4416A JANTX
2N4416A JANTXV
428F marking
2N4416AUB
JANTXV 2n4416A
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2N3506
Abstract: 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2000. INCH-POUND MIL-PRF-19500/349E 28 August 2000 SUPERSEDING MIL-PRF-19500/349D 12 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING
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MIL-PRF-19500/349E
MIL-PRF-19500/349D
2N3506,
2N3506A,
2N3506L,
2N3506AL,
2N3507,
2N3507L,
2N3507A,
2N3507AL,
2N3506
2N3506A
2N3506AL
2N3506L
2N3507
2N3507A
2N3507AL
2N3507L
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CIMRF7Z4011
Abstract: No abstract text available
Text: Y203-EN2-01.book Seite 253 Montag, 29. März 2004 12:52 12 CIMR-F7Z Varispeed F7 Frequency inverter for full flux vector control Current Vector Control with or without PG Torque Control PID Control Standard LCD operator Fieldbus options: DeviceNet, Profibus, CANOpen
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Y203-EN2-01
RS485
110KW
I23E-EN-01
CIMRF7Z4011
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CIMR-F7Z40151
Abstract: No abstract text available
Text: Y203-EN2-02-Katalog.book Seite 269 Mittwoch, 24. Mai 2006 2:22 14 CIMR-F7Z Varispeed F7 The industrial workhorse • • • • • • • • • • • Flux vector control with or without PG Silent operation. No current de-rating in silent mode. Torque control
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Y203-EN2-02-Katalog
RS485
I23E-EN-02
CIMR-F7Z40151
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CIMR-G7C4090
Abstract: CIMR-G7C4055
Text: Y203-EN2-02-Katalog.book Seite 249 Mittwoch, 24. Mai 2006 2:22 14 CIMR-G7C Varispeed G7 World first three level inverter architecture • • • • • • • • • • • • • • 3 level control 400 V class Current vector control and V/F with or without PG
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Y203-EN2-02-Katalog
RS-485
I37E-EN-01A
CIMR-G7C4090
CIMR-G7C4055
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PA 2027A
Abstract: LT 450 SL 2040 CT microphone czn-15e SANYO SP d 2037 transistor 2SK156
Text: SANYO SLM IC O N D LKTO R COKF -liedt D I n i i ’ Ui ’b UUUòd4b 2SK156 S ilicon 2037 N-Channel Junction Fíeld-Effect Transistor Capacitor Microphone Impedance Conversion Applications 540F A B S O LU T E M AXIMUM R A T IN G S /T a = 25°C unit Gate drain voltage
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2SK156
IS-126
1S-126A
IS-20MA
PA 2027A
LT 450 SL 2040 CT
microphone czn-15e
SANYO SP
d 2037 transistor
2SK156
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Untitled
Abstract: No abstract text available
Text: 0 OPTEK Product Bulletin OPC260 July 1996 NPN Silicon Phototransistor Chip Type OPC260 .040(1.016 SQUARE NOW. .ftl2(.30S) .008(.2037 HOP 71*-y' EMITTER CONTACT ACTIVE - AREA GOLD rfl AL. BASE CONTACT .0035 DIA. D I M E N S I O N S ARE IN I N C t t E S ( I I L L I M E T E R S )
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OPC260
OPC260
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d 2037 transistor
Abstract: CAPACITOR MICROPHONE 2SK596 d 2037
Text: f 2SK596 HI N -C h a n n e l J u n c tio n S ilic o n Field-Effect Transistor 2037 C a p a c it o r M i c r o p h o n e cwi» n p p iiu a ii Features • Especially suited for use in audio, telephone capacitor mlorophonea • Excellent voltage characteristic
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2SK596
V100uA
2SX596
15pFtSee
Vina10mV
110Hz
4157TA
d 2037 transistor
CAPACITOR MICROPHONE
2SK596
d 2037
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2SK376
Abstract: DDD3710 VLN 2003a
Text: SANYO SEMICONDUCTOR CORP 1B E » 1 i m U l h 0D0S3Û0 2SK376 N-Channel Junction Silicon Field-Effect Transistor 2037 1432A Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.
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0D053Ã
2SK376
2SK376
0DGB752
DDD3710
VLN 2003a
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Untitled
Abstract: No abstract text available
Text: EMI Common Mode Suppression Inductors D e liv e ry '8* ? one week Siz« Man. H tiq fit A e C D E I .303 7.75 .4 5 0 (11.43) .3 0 0 (7.62) .0 2 7 (.6 9 ) .0 2 0 (.51 ) .5 7 0 (14.46) 2 .360 (9.I4) .550 (13.97) .4 0 0 (10.16) .037 ( .9 4 ) .025 (.6 4 )
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JIS B1181
Abstract: d 2037 transistor capacitor 0.22mA TRANSISTOR b1181 FOR TRANSISTOR BC 149 B 2042A 2SK376 DDD3710 B1181
Text: SANYO SEMICONDUCTOR CORP 2SK376 1BE » 1 I ’ N-Channel Junction Silicon Field-Effect Transistor 2037 1432A i m U l h 0D0S3fl0 I Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.
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0D053Ã
2SK376
2SK376
B1181
B1252
JIS B1181
d 2037 transistor
capacitor 0.22mA
TRANSISTOR b1181
FOR TRANSISTOR BC 149 B
2042A
DDD3710
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2SK156
Abstract: VLN 2003a HT 12E APPLICATION sj 2025 sj 2038 TRANSISTOR BC 313
Text: SANYO Xtm CONPULTOR COKF 2SK156 r - ' x i - x z ' N-Channel Junction Silicon Field-Effect Transistor 2037 Capacitor Microphone Impedance Conversion Applications 540F A B S O L U T E M AXIMUM RA TIN G S/Ta = 2 5°C unit Gate drain voltage vdgo Gate current
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2SK156
B1181
B1252
0DUB722
2SK156
VLN 2003a
HT 12E APPLICATION
sj 2025
sj 2038
TRANSISTOR BC 313
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B1335A
Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Text: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033
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TQ-220,
O-22QFP,
2SC4505
SDp901'
2SC4354
2SD2061
2SB1496
2SB1334"
2SC457
2SA1634
B1335A
D2033A
D1855A
D2037
B1186A
2sb1335a
d2038
B 1186a
B1085A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP 2037 Advance Information The RF Line VHF Power Transistor 35 W — 225 MHz VHF POWER TRANSISTOR NPN SILICON The TP2037 has been sp e cifica lly desig n ed and characterized fo r 12.5 V o p e ra tio n in 225 MHz h ig h pow e r a m p lifie rs.
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TP2037
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sef820
Abstract: SEF822 2088 DIODE
Text: S 6 S-THÔMSON .D7E » H 7121537 OOiaO'-l'ï b | “ 73C 1 7 5 4 6 HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement, mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS P«0,
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SEF820
SEF821
SEF822
SEF823
00V/450V
00V/450V
300/is,
C-271
2088 DIODE
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2SC2621
Abstract: ic sj 2038 TRANSISTOR ML5 sj 2038 12006A sj 2025 marking ML5 ic sj 2025 TO-220AA marking 2009a
Text: 2SC2621 NPN Triple Diffused Planar Silicon Transistor 2009A Color TV Chroma Output Applications E675A Absolute Maxi m u m Ratings at T a = 2 5 C Collector to Base Voltage CBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current
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2SC2621
200VtIE
0021J
2SC2621
ic sj 2038
TRANSISTOR ML5
sj 2038
12006A
sj 2025
marking ML5
ic sj 2025
TO-220AA
marking 2009a
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b1181
Abstract: 2043A TRANSISTOR b1181 transistor 9-t b1252 TRANSISTOR darlington fp 1016 2SD1914 DDD3710 IC 2453 FSIM
Text: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain
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2SD1914
B1181
B1252
2043A
TRANSISTOR b1181
transistor 9-t
b1252 TRANSISTOR
darlington fp 1016
DDD3710
IC 2453
FSIM
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4227t
Abstract: 2043A TRANSISTOR R 2453
Text: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain
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2SD1914
IS-126
1S-126A
IS-20MA
4227t
2043A
TRANSISTOR R 2453
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500 DKZ
Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt
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150/160-MHz-Band
500 DKZ
TFK 4 314
valvo
TELEFUNKEN* U 111 B
str w 6052
tfk 1007
tfk 014
Schwingquarz Telefunken
TFK S 417 T
valvo transistoren
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2SK686
Abstract: ODDS445 t37h
Text: SANYO SEMICONDUCTOR 15E D I CORP T-3^-|/ 2SK686 N-Channel M O S Silicon Field-Effect Transistor 2052A <£&m 7 cH7G7ti~ DODS441 High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute H a x l M Ratings at Ta=25°C
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2SK686
0DGB752
ODDS445
t37h
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a 1757 transistor
Abstract: ti 8ak JIS G3141 2SC1755 2SC1756 2SC1757 transistors a 1757 a 1201 sanyo
Text: SANYO SEMICONDUCTOR 1EE CORP D I 7^707^ □ □ □ 4 1 4 5 5 | T - Z Z - O V 1756 , 1757 2010A 2013 2012 NPN Triple Diffused Planar Silico n Transistors TV Chroma Output, Video Output, Sound Output Applications 4290 These 2SC1755,1756,1757 are different only from their packages.
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ODDH14S
T-zz-07
2SC1755
0DGB752
a 1757 transistor
ti 8ak
JIS G3141
2SC1756
2SC1757
transistors a 1757
a 1201 sanyo
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2SC693
Abstract: sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A
Text: S AN Y O SEMICONDUCTOR CORP 12E D I T V W 07t. O O O m tO 2SC693 T'li-is' NPN Pianar Silicon Transistor 2003A ; ' " * * •> t - Low Frequency, Low IMoise Am p Applications . 2S7E Absolute M a x i i » Eatings at Ta=25°C Colleotor to Base Voltage CBO Collector to Emitter Voltage 7CE0
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2SC693
D414D
0DGB752
2SC693
sj 2025
sj 2038
2SC1570
2sc693 sanyo
ic sj 2038
JIS G3141
of HT 12E
AT 2005A
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2SA1210
Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Text: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage
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2SA1210
0DGB752
2SA1210
2SC2912
FP 1018
JIS G3141
DDD3710
BC PNP Transistor
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