116A
Abstract: C67078-S3120-A2 D 346 transistor
Text: BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 346 50 V 58 A 0.018 Ω TO-218 AA C67078-S3120-A2 Maximum Ratings Parameter Symbol
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O-218
C67078-S3120-A2
116A
C67078-S3120-A2
D 346 transistor
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D 346 transistor
Abstract: C67078-S3120-A4
Text: BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 346 S2 60 V 58 A 0.018 Ω TO-218 AA C67078-S3120-A4 Maximum Ratings Parameter
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O-218
C67078-S3120-A4
D 346 transistor
C67078-S3120-A4
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aqz107
Abstract: AQX2144 AQY272 AQY272A AQY272AX AQY274A AQY274AX AQY275A AQY275AX AQY277A
Text: AQY27❍ PhotoMOS RELAYS PD Type 1- channel Form A Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 8.8±0.2 .346±.008 9.3±0.2 .366±.008 3.9±0.2 .154±.008 8.8±0.2 .346±.008 3.7±0.2 .146±.008 9.3±0.2 .366±.008 mm inch 1. Flat-Packaged Type (W) 8.8x (D)
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AQY27r
E43149
LR26550
154inch
AQY272)
AQZ105
AQZ205
AQZ107
AQZ207
aqz107
AQX2144
AQY272
AQY272A
AQY272AX
AQY274A
AQY274AX
AQY275A
AQY275AX
AQY277A
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relay dc 24V matsushita
Abstract: AQY27 DC to AC transformer smoke detector schematic diagrams Solar Charge Controller diagram Transistors Diodes smd e2 ultrasonic range meter IC schematic diagram dc to ac converter transformer dc to ac AQY272
Text: AQY27❍ PhotoMOS RELAYS PD Type 1- channel Form A Type UL File No.: E43149 CSA File No.: LR26550 FEATURES 8.8±0.2 .346±.008 9.3±0.2 .366±.008 3.9±0.2 .154±.008 8.8±0.2 .346±.008 3.7±0.2 .146±.008 9.3±0.2 .366±.008 mm inch 1. Flat-Packaged Type (W) 8.8x (D)
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AQY27r
E43149
LR26550
154inch
AQY272)
AQZ105
AQZ205
AQZ107
AQZ207
relay dc 24V matsushita
AQY27
DC to AC transformer
smoke detector schematic diagrams
Solar Charge Controller diagram
Transistors Diodes smd e2
ultrasonic range meter IC
schematic diagram dc to ac converter
transformer dc to ac
AQY272
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233D5PM Microcontroller identical to LM4F120C4QR D ATA SHE E T D S -T M 4C 1233 D5 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 346 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright
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TM4C1233D5PM
LM4F120C4QR)
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smd transistor J3
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1233D5PM Microcontroller identical to LM4F120C4QR D ATA SHE E T D S -T M 4C 1233 D5 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 346 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright
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TM4C1233D5PM
LM4F120C4QR)
smd transistor J3
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C67078-S3120-A2
Abstract: No abstract text available
Text: SIPMOS Power Transistors BUZ 346 BUZ 346 S2 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID TC RDS on Package 1) Ordering Code BUZ 346 50 V 58 A 73 ˚C 0.018 Ω TO-218 AA C67078-S3120-A2 BUZ 346 S2 60 V 58 A 73 ˚C 0.018 Ω TO-218 AA
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O-218
C67078-S3120-A2
C67078-S3120-A3
C67078-S3120-A2
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transistor D600k
Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
Text: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
transistor D600k
transistor d600
transistor b631
D600k transistor
transistor B631K
D600K
b631 transistor
B631K
D600
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transistor D600k
Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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ENN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
transistor D600k
transistor d600
D600K
D600k transistor
transistor b631
b631k
b631 transistor
transistor B631K
k b631k
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2sb631 transistor
Abstract: transistor b631 transistor D600k 2sb631 2sd600
Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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ENN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
2sb631 transistor
transistor b631
transistor D600k
2sd600
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SILICON COMPLEMENTARY transistors darlington
Abstract: NTE2554 NTE2555
Text: NTE2554 NPN & NTE2555 (PNP) Silicon Complementary Transistors Darlington Driver Applications: D Industrial Equipment D Printers D Typewriters D Sewing Machines D Recorders D Computers D Igniters D D D D D D D Car Coolers Projectors Players Stereos Home Appliances
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NTE2554
NTE2555
SILICON COMPLEMENTARY transistors darlington
NTE2554
NTE2555
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NTE2591
Abstract: NPN transistor 900v
Text: NTE2591 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
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NTE2591
NTE2591
NPN transistor 900v
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NPN 800V
Abstract: NPN VCEO 800V transistor 800v NTE2585
Text: NTE2585 Silicon NPN Transistor High Voltage Amplifier Features: D High Breakdown Voltage D Low Output Capacitance D High Reliability D Intended for High–Density Mounting Suitable for Sets Whose Height is Restricted Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2585
NPN 800V
NPN VCEO 800V
transistor 800v
NTE2585
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NTE2591
Abstract: NTE259
Text: NTE2591 Silicon NPN Transistor High Voltage Amp/Switch Features: D High Breakdown Voltage, High Reliability D Low Output Capacitance D Wide ASO Range Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
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NTE2591
NTE2591
NTE259
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode vvoyss ' fé i • Avalanche-rated Pin 1 Pin 2 G Type B U Z 346 Vbs 50 V b 58 A flDS on 0.018 n Pin 3 D S Package Ordering Code TO-218AA C67078-S3120-A2 Maximum Ratings
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O-218AA
C67078-S3120-A2
flE35b05
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BUZ 140 L
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistors VDS /q ^D S o n • • • • BUZ 16 BUZ 346 BUZ 346 S2 = 50 . . . 60 V = 48 . . . 58 A = 0.018 Q T O -2 04 AE (BUZ 16) N channel E nhancem ent mode A valanche-proof Packages: TO -204A E (TO-3) T O -2 18 A A (T O P -3)1)
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-204A
7078-A
020-A
31-A2
BUZ 140 L
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UPA827TF
Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T
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UPA800T
UPA801T
UPA802T
UPA806T
UPA807T
UPA808T
UPA809T
UPA810T
UPA811T
UPA812T
UPA827TF
UPA833TF
UPA831TF
SOT 363
175 sot363
SOT 153
NE685
dual sot363
sot-363
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DIODE BUZ
Abstract: sis 661
Text: SIEMENS BUZ 346 SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Ordering Code Tc ^DS on Package 1> 58 A 73 °C 0.018 n TO -218 AA C67078-S3120-A2 58 A 73 ‘ C 0.018£2 TO -218 AA C67078-S3120-A 4 Type VDS ¡a BUZ 346 50 V
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C67078-S3120-A2
C67078-S3120-A
DIODE BUZ
sis 661
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D 346 transistor
Abstract: No abstract text available
Text: SIEMENS BUZ 346 S2 Not far new design SJPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b 58 A flbaon 0.018 n Package Ordering Code TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S3120-A4
O-218
D 346 transistor
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TRANSISTOR sd 346
Abstract: No abstract text available
Text: SIEMENS BUZ 346 N oi fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 Vds 50 V b 58 A ^DS on Package Ordering Code 0.018 Q TO-218 AA C67078-S3120-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218
C67078-S3120-A2
TRANSISTOR sd 346
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b ^DS on Package Ordering Code 58 A 0.018 n TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S3120-A4
fi53SbD5
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2n4401 331
Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598
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2N3904
2N3906
2N4401
2N4403
2SA821S.
2SA830S.
2SA854S.
2SB822
2n4401 331
2n4403 331
2n3904 409
2n3904 331
k 2715
2n3906 331
1352s
MPSA06 346
2N584
C847B
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C
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bbS3T31
D0152D1
RX3034B70W
0D152D5
33-iS.
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sd 347
Abstract: VEB mikroelektronik Transistoren DDR sd 346 Funkamateur FUNKAMATEUR-Bauelementeinformation SD349 telefunken transistoren MIKROELEKTRONIK ERFURT aktive elektronische bauelemente ddr
Text: FUNKAMATEUR-Bauelementeinformation Silizium-npn- und -pnp-Leistungstransistoren in Epitaxie-Planar-Technologie A pplikationsschaltungen T G L 39125 H ersteller: V E B M ik ro e le k tro n ik „ A n n a S e g h e r s " N e u h a u s Kurzcharakteristik Grenzwerte im Betriebstemperaturbereich
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Anzugsmomentvon50.
80Ncm
sd 347
VEB mikroelektronik
Transistoren DDR
sd 346
Funkamateur
FUNKAMATEUR-Bauelementeinformation
SD349
telefunken transistoren
MIKROELEKTRONIK ERFURT
aktive elektronische bauelemente ddr
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