Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J10023 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS
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MJ10023/D
J10023
97A-05
O-204AE
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mj6503 motorola
Abstract: MJ6503 mj6503 transistor MJ6502 MARK B3L MJ-6503
Text: MOTOROLA SC X S TR S /R F 1 SE D I b 3b ? 2 S4 QQÖMTÖS 2 | MOTOROLA SEMICONDUCTOR MJ6503 TECHNICAL DATA D e siS’ruM's D ata Sheet 8 AM PERE PNP SIUCON POWER TRANSISTOR SWITCHMODE SERIES PNP SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The MJ6503 transistor is designed for high-voltage, high-speed,
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MJ6503
MJ6503
mj6503 motorola
mj6503 transistor
MJ6502
MARK B3L
MJ-6503
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J423
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA M J423 H igh-V oltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for m e d iu m -to -h ig h voltage inverters, converters, regulators and
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MJ423/D
O-204AA
J423
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Motorola AN222A
Abstract: MJ10023 1N4937 sps transistor
Text: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA MJ10023 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS
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MJ10023/D
MJ10023
MJ10023
DeviceMJ10023/D
Motorola AN222A
1N4937
sps transistor
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PDF
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MJ423
Abstract: mj423 motorola MOTOROLA TRANSISTOR
Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits.
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MJ423/D
MJ423
mj423 motorola
MOTOROLA TRANSISTOR
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EM- 546 motor
Abstract: 2N6545 2N6545 Motorola 2N6544
Text: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,
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b3b72S4
2N6545
EM- 546 motor
2N6545 Motorola
2N6544
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PDF
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ferroxcube 56-590-65
Abstract: UT25 coaxial 2N6439 UT25 VK200
Text: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
ferroxcube 56-590-65
UT25 coaxial
2N6439
UT25
VK200
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4bE D I • b3b?2SH QGISbbO 3 ■ M O T b 7 :^/-/5' MOTOROLA SEMICONDUCTOR TECHNICAL DATA ÙM0 PRELIMINARY DATA mini MRFS5109HXV/HS Discrete Military Operation PROCESSED TO MIL-S-19500/453 SURFACE MOUNTABLE R.F. TRANSISTOR 400 VOLT, 400 MILLIAMPERE BIPOLAR NPN
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MRFS5109HXV/HS
MIL-S-19500/453
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MMBTA517
Abstract: Transistor E
Text: SEMICONDUCTOR MMBTA517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. E B L D L SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V IC 400 mA PC *
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MMBTA517
100mA,
100MHz,
MMBTA517
Transistor E
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2n6439
Abstract: UT25 VK200 Ferox
Text: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
2N6439/D*
2n6439
UT25
VK200
Ferox
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k 3683 transistor
Abstract: MJ-13080
Text: MOTOROLA SC 15E D I fc3b75S4 0005127 S | XSTRS/R F MOTOROLA Ml13080 SEMICONDUCTOR TECHNICAL DATA D esig n er’s D ata S h eet 8 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 150 WATTS The MJ13080 tra n sisto r is designed fo r high -vo ltag e , high-speed,
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fc3b75S4
Ml13080
MJ13080
k 3683 transistor
MJ-13080
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2N6439
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
2N6439
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PDF
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MJ13333
Abstract: MJ13330 1N4934 1N4937 MJ13331 MJE200 MJE210
Text: MOTOROLA Order this document by MJ13333/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ13333 Data Sheet SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching
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MJ13333/D*
MJ13333/D
MJ13333
MJ13330
1N4934
1N4937
MJ13331
MJE200
MJE210
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ms 7254 ver 1.1
Abstract: ms 7254 ver 3.0 T557
Text: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS
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L3b75S4
MJE13070
MJE13070
ms 7254 ver 1.1
ms 7254 ver 3.0
T557
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transistor LT 028
Abstract: LT 74 s
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line lc = - 400 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . . d esigned for am plifier, frequency m ultiplier or o scillator a p p li cations in m ilitary and industrial equipm ent. Suitable for use as
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O-205AD
transistor LT 028
LT 74 s
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SILICON TRANSISTOR CORP
Abstract: No abstract text available
Text: SILICON TRANSISTOR CORP fl2S4D22 □□□□‘ìflb <^3 « S T C 5bE D T -3 W S SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 Volts 0.9 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS
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fl2S4D22
SNF40409
O-258
ST102
MIL-S-19500
SILICON TRANSISTOR CORP
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PDF
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transistor IRF730
Abstract: IRF730 PHP3N50 PHP3N60 PHP5N40
Text: Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated IRF730 FEATURES SYMBOL QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance d VDSS = 400 V
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IRF730
O220AB)
IRF730
transistor IRF730
PHP3N50
PHP3N60
PHP5N40
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SILICON TRANSISTOR CORP
Abstract: h a 431 transistor
Text: SILICON TRANSISTOR CORP SbE J • 8 as „ü52 0 0 D 0 , „ 01Q M S T C SILICON TRANSISTOR CORPORATION { Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 fax: 508-250-1046 . A POWERHOUSE 400 Volts 0.4 Ohms TECHNICAL DATA SHEET ABSOLUTE MAXIMUM RATINGS
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SNF40404
ST102
MIL-S-19500
SILICON TRANSISTOR CORP
h a 431 transistor
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STP4N40FI
Abstract: SKs TRANSISTOR STP4N
Text: SGS-THOMSON iyH£ïï^ sKS STP4N40 STP4N40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP4N40 STP4N40FI 400 400 V V R D S (o n Id 2.1 S2 2.1 LI 4 A 3 A . • . . AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STP4N40
STP4N40FI
T0-220
ISOWATT220
STP4N40/FI
STP4N40FI
SKs TRANSISTOR
STP4N
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES ・High Breakdown Voltage. ・Collector Power Dissipation : PC=350mW. E B L D L H UNIT Collector-BaseVoltage VCBO 450 V Collector-EmitterVoltage VCEO 400
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MMBTA44
350mW.
100mA
10MHz
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 86D 0 1 122 OLE D D • LLS3131 Q0133L0 7 T '3 'i- /J BLU50 V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the 30 to 400 MHz range.
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LLS3131
Q0133L0
BLU50
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PDF
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MRF325
Abstract: BH rn transistor
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON
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MRF325
MRF325
BH rn transistor
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PDF
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730c-04
Abstract: MOC8204 MOC8205 MOC8206 OPTO MOC8204
Text: MOTOROLA Order this document by MOC8204/D SEMICONDUCTOR TECHNICAL DATA MOC8204* [CTR = 20% Min] GlobalOptoisolator MOC8205 6-Pin DIP Optoisolators High Voltage Transistor Output 400 Volts [CTR = 10% Min] MOC8206 [CTR = 5% Min] *Motorola Preferred Device
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MOC8204/D
MOC8204*
MOC8205
MOC8206
MOC8204,
MOC8205
MOC8206
MOC8204/D*
OptoelectronicsMOC8204/D
730c-04
MOC8204
OPTO MOC8204
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PDF
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transistor motorola 359
Abstract: Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134
Text: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.
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MRF134/D
MRF134
MRF134/D*
transistor motorola 359
Triode 805
AN721
808 power Triode
Beckman Industrial
zener motorola
1N5925A
AN215A
MRF134
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