D 417 TRANSISTOR Search Results

D 417 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

D 417 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in	OCR Scan	QQ30bRQ O220AB BUK456-800A/B BUK456 -800A -800B K456-800A bbS3T31 0030b84	PDF
BF418 Abstract: BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video Text: BF 416 *BF418 PNP SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL Compì, of BF 415 and BF 417 Preferred device D isp o sitif recommandé Video output stages in T V sets Etages de sortie des amplificateurs Video dans ies téléviseurs	OCR Scan	BF416 BF418 O-126- CB-16 BF418 BF416 J BF418 416 TRANSISTOR BF transistor BF417 transistor 417 Bf 417 g transistor BF415 emetteur video	PDF
BFT44 Abstract: BFT45 Text: N AM ER P H I L IP S /D IS C R E T E h ^Z ^ 3 3 *1 3 1 D Q Q S77SQ 417 APX BFT44 BFT45 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS Planar epitaxial transistors in TO-39 metal envelopes, intended as general purpose amplifiers and switching devices in industrial and telephone applications.	OCR Scan	bbS3131 QQS77SQ BFT44 BFT45 BFT45	PDF
honeywell memory sram Abstract: 419B3E Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec	OCR Scan	HR2210 1x106 1x1012rad 1x101 honeywell memory sram 419B3E	PDF
417 TRANSISTOR Abstract: BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417 Text: BF415 *B F 417 NPN SILICON TRANSISTOR, E P IT A X IA L PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L Compì, o f BF 416 and BF 418 îfc Preferred device D isp o sitif recommandé Video o utput stages in T V sets Etages de sortie des amplificateurs	OCR Scan	BF415 O-126- CB-16 417 TRANSISTOR BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417	PDF
BLY93C Abstract: RF POWER TRANSISTOR NPN vhf 77530 capacitor Text: 7 1 1 0 8 2 ti D 0 t.3 t.M7 417 « P H I N bSE D BLY93C P H IL I P S I N T E R N A T I O N A L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is	OCR Scan	711082ti BLY93C 59-j54 OT-120. BLY93C RF POWER TRANSISTOR NPN vhf 77530 capacitor	PDF
TE 2241 motorola Abstract: No abstract text available Text: MOTORCLA SC XSTRS/R 1 5 E D § L3t,?2SM F M A X IM U M RATINGS Symbol Rating Value U nit Collector-Emitter Voltage VCEO 40 Vdc Emitter-Base Voltage Ve b o 4.0 Vdc ic 100 mAdc Symbol Max Unrt PD 225 mW 1.8 mWV°C R«j a 556 °C/W PD 300 mW 2.4 mWAC R«j a 417	OCR Scan	MMBTA20L OT-23 O-236AB) TE 2241 motorola	PDF
Untitled Abstract: No abstract text available Text: 12E D I fc.3b?HS4 0005014 4 M A X I M U M R A T IN G S Value Unit VCEO 32 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage v EBO 5.0 Vdc 'c 800 mAdc Sym bol M ax Unit PD 225 mW 1.8 mW/°C Rö j a 556 °c /w Po 300 mW 2.4 mW/'C RejA 417 X /W Tj« Tstq	OCR Scan	BCW65AL OT-23 O-236AB)	PDF
diodes SY 200 Abstract: diode sy 526 Text: M A XIM U M RATINGS EA CH D IO DE Sy m b o l Value Reverse V oltage Vr 50 V dc Forw ard Current F 200 m Adc FM (surge) 500 m Adc Sy m b o l M ax Unit PD 225 mW 1.8 m W /T RtfJA 556 °c/w Pd 300 mW 2.4 m W /X RflJA 417 °C/W Tj< ^sta - 55 to + 1 50 DC Rating	OCR Scan	BAV74LT1 OT-23 O-236AB) diodes SY 200 diode sy 526	PDF
cdi ignition Abstract: MKP 338 2 X2 ENEC KP H 1000 pF axial R.46 MKP X2 MKP 1813 MKP 339 1 X1 MKP Y2/X1 mkp x2 enec MKP 339 1 capacitor r. 46 mkp x2 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . C apacit o rs S elect o r G ui d e Film capacitors 303 / 304 312 313 314 338 1 338 4 338 6 339 3 6 5 - 3 67 370 - 373 375 38 3 38 5 38 6 40 5 416 - 417 - 418 - 419 - 420 422 - 422 mini 467 - 46 8 - 46 9 471	Original	VMN-SG0042-0704 cdi ignition MKP 338 2 X2 ENEC KP H 1000 pF axial R.46 MKP X2 MKP 1813 MKP 339 1 X1 MKP Y2/X1 mkp x2 enec MKP 339 1 capacitor r. 46 mkp x2	PDF
AVALANCHE TRANSISTOR Abstract: FMMT417 FMMT415 Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR i S S U E 4 - O C T O B E R 1995 FMMT415 FMMT417 O FEATURES * Specifically de sign ed for A v a la n c h e m ode o peration * 60A Peak A va la n ch e Current Pulse w idth=20ns rC A P P L IC A T IO N S * Laser LED drivers	OCR Scan	FMMT415 FMMT417 AVALANCHE TRANSISTOR FMMT417	PDF
bf417 Abstract: Bf 417 g transistor Text: <^£.mL-dondu<itoi LPioaucti, L/nc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF415 *BF417 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL Compl. of BF 416 and BF 418	Original	BF415 BF417 JO-126- CB-16 bf417 Bf 417 g transistor	PDF
Untitled Abstract: No abstract text available Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound	Original	FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084	PDF
SD25-2R2 Abstract: BAT54S application note DFLS220L DN417 BAT54S LT1946 LT3489 Text: Drive Large TFT-LCD Displays with a Space-Saving Triple-Output Regulator – Design Note 417 Jesus Rosales Introduction The power appetite of large TFT-LCDs appears to be insatiable. Power supplies must feed increasing numbers of transistors and improved display resolutions, and do	Original	LT3489, 600mA DFLS220L LT3489 100nF 400mA CDRH4D28-2R0 DN417 400mA 900mA SD25-2R2 BAT54S application note DFLS220L BAT54S LT1946 LT3489	PDF

Untitled Abstract: No abstract text available Text: MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4126 Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant	Original	MMBT4124 MMBT4126) OT-23 J-STD-020D MIL-STD-202, DS30105	PDF
B0415 Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063 Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2	OCR Scan	BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063	PDF
marking code k1 Abstract: J-STD-020D MMBT4124 MMBT4124-7-F MMBT4126 Text: MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4126 Ideal for Medium Power Amplification and Switching	Original	MMBT4124 MMBT4126) OT-23 J-STD-020D MIL-STD-202, DS30105 marking code k1 J-STD-020D MMBT4124 MMBT4124-7-F MMBT4126	PDF
mmbt3904 Abstract: K1N TRANSISTOR marking code k1 complementary mmbt3904 MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 MMBT39047F k1n marking code Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching	Original	MMBT3904 MMBT3906) AEC-Q101 OT-23 J-STD-020D DS30036 mmbt3904 K1N TRANSISTOR marking code k1 complementary mmbt3904 MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 MMBT39047F k1n marking code	PDF
K1N TRANSISTOR Abstract: marking code k1 MMBT3904 complementary mmbt3904 mmbt3904 complementary MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 transistor marking code Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching	Original	MMBT3904 MMBT3906) AEC-Q101 OT-23 J-STD-020D MIL-STD-202, 20orporated DS30036 K1N TRANSISTOR marking code k1 MMBT3904 complementary mmbt3904 mmbt3904 complementary MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 transistor marking code	PDF
UJT-2N2646 PIN DIAGRAM DETAILS Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets	Original		PDF
Untitled Abstract: No abstract text available Text: MMBF170 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)	Original	MMBF170	PDF
ipc-SM-782 Abstract: BC847BLD BC847BLD-7 Text: BC847BLD Lead-free Green NEW PRODUCT SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Features • · · · · Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant Note 2	Original	BC847BLD OT-23 J-STD-020C MIL-STD-202, DS30824 ipc-SM-782 BC847BLD BC847BLD-7	PDF
marking code k1 Abstract: J-STD-020D MMBT4401 MMBT4401-7-F MMBT4403 k2x transistor surface mount Text: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching	Original	MMBT4401 MMBT4403) AEC-Q101 OT-23 J-STD-020D DS30039 marking code k1 J-STD-020D MMBT4401 MMBT4401-7-F MMBT4403 k2x transistor surface mount	PDF
Untitled Abstract: No abstract text available Text: BC847BLD SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Features • • • • • • Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant Note 1	Original	BC847BLD AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS30824	PDF

D 417 TRANSISTOR Search Results

D 417 TRANSISTOR Result Highlights (5)

D 417 TRANSISTOR Datasheets Context Search

Untitled

BF418

BFT44

honeywell memory sram

417 TRANSISTOR

BLY93C

TE 2241 motorola

Untitled

diodes SY 200

cdi ignition

AVALANCHE TRANSISTOR

bf417

Untitled

SD25-2R2

Untitled

B0415

marking code k1

mmbt3904

K1N TRANSISTOR

UJT-2N2646 PIN DIAGRAM DETAILS

Untitled

ipc-SM-782

marking code k1

Untitled