MJE181
Abstract: MJE171 200 watts audio amp power transistors circuit diagram
Text: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http://onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.
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MJE170,
MJE171,
MJE172
MJE180,
MJE181,
MJE182
MJE170/180
MJE180
MJE181
MJE171
200 watts audio amp power transistors circuit diagram
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BU526
Abstract: transistor BU 102 BU 526 transistor 526 transistor bu 526 B1149
Text: BU 526 "V Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendung: G etaktete Netzgeräte Application: Switching m ode p o w e r supply Besondere Merkmale: Features: • In D reifachdiffusions-M esa-Technik
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transistor C 2615
Abstract: bu526 js 2617 BF56 marking EAAT transistor 526
Text: L I _-— - ^ 17E D TELEFUNKEN ELECTRONIC • Ô ^ O O R b DQ0tm'7S 4 . THIUIIFTOKIMI electronic BU 526 Crtalrv« Tèchnotogtç* r-3 3 -1 3 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In tripple diffusion technique
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transistor t05
Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A
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5flMfl35g
DETRdf\J515TQR
2N327A
N328A
2N329A
2N330
2N726
2N863
2N939
2N945
transistor t05
N2907
N2907A
2N3040
t05 transistor
2N2927A
2N2280
2N3064
2N1921
2N3058
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KJE transistor
Abstract: TRANSISTOR a4w a4w transistor transistor kje 2SD526-O Transistor 2SD 2SD52 2sd 526 2SD526 2SD526-0
Text: 526 2SD SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR Uni t. in O Bffi J . Û3 MAX . o ^3-6±tX2 Power Amplifier Applications hpE • a u ^ è Wo Pc = 3 0 W Tc = 25TC g S B ö D e i n y T 1!) > v ^ y - t t t í ; Ü 2 0 ~ 2 5 W ; ? 7 * 0 H i - Fi 0 T L 7 >
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3SB596
220AB
llAC75
300X300X2WAÂ
200X800XSÂ
100X100X211Â
100X100X1
50X50X1M
KJE transistor
TRANSISTOR a4w
a4w transistor
transistor kje
2SD526-O
Transistor 2SD
2SD52
2sd 526
2SD526
2SD526-0
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Transistor hFE CLASSIFICATION Marking CE
Abstract: D 526 SILICON TRANSISTOR marking 9fb
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Sutable for AF-Driver stages and low power output stages • Complement to BC817/BC818 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Characteristic Symbol Collector Emitter Voltage
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BC807/BC808
BC817/BC818
OT-23
BC807
BC808
BC808
Transistor hFE CLASSIFICATION Marking CE
D 526 SILICON TRANSISTOR
marking 9fb
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D 526 SILICON TRANSISTOR
Abstract: N527 Darlington NPN Silicon Diode KSH122
Text: KSH122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK 4* High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I.PACK, I " Suffix) Electrically Similar to Popular TIP122
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KSH122
TIP122
D 526 SILICON TRANSISTOR
N527
Darlington NPN Silicon Diode
KSH122
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Untitled
Abstract: No abstract text available
Text: Central“ CMST2907A Semiconductor Corp. SURFACE MOUNT SUPERmini PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epi taxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed
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CMST2907A
OT-323
150mA,
150mAt
150mA-
OT-323
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MJE2011
Abstract: MJE2021 MJE2020 MJE-2020 MJE2010
Text: MJE2010, MJE2011 PNP SILICON MJE2020, MJE2021 NPN 5.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 40-60 VOLTS 80 WATTS . . . designed for use in general-purpose amplifier and switching applications. • Low Collector-Emitter Saturation Voltage VcE(sat) ” 1-0 Vdc (Max) @ l c * 3.5 Ade
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MJE2010,
MJE2011
MJE2020,
MJE2021
MJE2010
MJE2020
MIE3021
MJE-2020
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE D bb53T31 DQE7T15 Til APX BSX32 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in a TO-39 encapsulation. The BSX32 is designed fo r use in high current switching applications. QUICK REFERENCE DATA
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bb53T31
DQE7T15
BSX32
BSX32
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
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BU4523AX
100Pd/PD2
Fid-16-
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 25E D b b S B ' m 001=1045 7 I BUX46BUX46A T - 3 3 - f 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for us in converters, inverters, switching regulators, motor control systems etc.
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BUX46BUX46A
BUX46
BUX46A
bbS3T31
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SB 62A diode
Abstract: BDT62 BDT63 bdt63a nas 560 BDT62B BDT63B BDT63C BDT63C PHILIPS
Text: BDT62; 62A _ PHILIPS J DB T62B ShE D INTERNATIONAL • 00i+323fl T ä 4 « P H I N 7110a2b T - 3 ? - 3 t SILICON DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base transistors In monolithic Darlington circuit for audio output stages and general
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BDT62;
BDT62B;
T0-220
BDT63,
BDT63A,
BDT63B
BDT63C.
BDT62
C11Dflat
SB 62A diode
BDT63
bdt63a
nas 560
BDT62B
BDT63C
BDT63C PHILIPS
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BDT62B
Abstract: No abstract text available
Text: BDT62; 62A BDT62B; 62C _ J K . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it for audio output stages and general am plifier and switching applications. TO-220 plastic envelope. N-P-N complements are BDT63,
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BDT62;
BDT62B;
O-220
BDT63,
bbS3T31
BDT62B
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BUX46
Abstract: BUX46A
Text: N AMER PHILIPS/DISCRETE 2SE D bb53' 1 OOnOHS 7 I BUX46 BUX46A T - 3 3 - J 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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BUX46
BUX46A
T-33-J3
BUX46A
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BCX53-6
Abstract: BCX51-6 bcx52-6 BCX51 BCX52 BCX53 AB BCX51 BCX51-10 BCX51-16 BCX52 BCX53 BCX54
Text: □b53^31 N ANER P H I L I P S / D I S C R E T E ObE QD15bö2 b BCX51 BCX52 BCX53 D SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages
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QD15bÃ
BCX51
BCX52
BCX53
BCX54,
BCX55
BCX56
BCX51
BCX53-6
BCX51-6
bcx52-6
BCX51 BCX52 BCX53 AB
BCX51-10
BCX51-16
BCX53
BCX54
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Untitled
Abstract: No abstract text available
Text: Transistors Digital Transistor Common Emitter Dual Transistors UMG3N/ FMG3A •Features 1) Two DTC143T digital transistors in a UMT, SMT package. 2) Mounting cost and area can be cut in half. ^External dimensions (Units: mm) UMG3N 2.Q±Q.2 _ - 0.1 (4) t
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DTC143T
SC-88A
SC-74A
100MHz*
500/i
00171TE
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BUX46
Abstract: BUX46A N13e
Text: N AMER PHILIPS/DISCRETE 2SE » bbS3' i o a n o M s 7 i BUX46BUX46A T-33-J3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO -3 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.
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BUX46-BUX46A
T-33-J3
BUX46
BUX46A
BUX46A
N13e
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diode t62
Abstract: No abstract text available
Text: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,
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BDT62
BDT62B;
7110fl2b
0043S3Ö
BDT63C
BDT62;
7110flat
diode t62
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Untitled
Abstract: No abstract text available
Text: • 140 Com merce Drive Monígomeryvüfe, PA 18936-1013 SD1526-1 T e l: 2 1 S 631-9840 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS * DESIGNED FOR h ig h POWER p u l s e ¡FP DME. TACAN s fs.-OW {iypi i f f 1030- 1090M Hx • 5 OW W (i) O M E 1025-1150MHJ
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SD1526-1
1090M
1025-1150MHJ
960-1215MHz
SD15i
S/11S0M
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transistor EB 525
Abstract: TRANSISTOR 4148 ic 4148 5262n din 4148 N 4148 41873 CCB030 2N4036
Text: Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: General Besondere Merkmale: Features: • • • Hohe Sperrspannung • Verlustleistung 7 W High reverse voltage Power dissipation 7 W Abmessungen in mm
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TRANSISTOR J 5804 NPN
Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.
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2SC4885
SC-70
TRANSISTOR J 5804 NPN
nec 2501 LD 229
transistor NEC D 986
NEC 2501 MF 216
nec 2501 LD 325
tfr 586
nec 2501 Le 629
CD 1691 CB
MC 151 transistor
567/triac ZO 410 MF
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Untitled
Abstract: No abstract text available
Text: Transistors Digital Transistor Common Emitter Dual Transistors UMG 3 N / FM G 3 A •F e a tu re s • E x te rn a l dim ensions (Units: mm) 1 ) Tw o DTC143T digital transistors in FMG3Ä UMG3N a UMT, SMT package. 2 .0 ± 0.2 . 2) M o u n tin g c o s t a n d a re a ca n be
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DTC143T
100MHz*
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PA33
Abstract: No abstract text available
Text: NEC PNP SILICON TRANSISTOR AN1F4M DESCRIPTION The AN1F4M is designed for use in medium speed switching circuit. PACKAGE DIMENSIONS in millimeters inches FEATURE • 52 MAX. (0.204 MAX.) Bias resistors built-in type PNP transistor equivalent circuit. ABSOLUTE M A X IM U M RATINGS
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