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    D 823 TRANSISTOR Search Results

    D 823 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    D 823 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Fdd spindle motor circuit 300

    Abstract: panasonic servo motor AC Motor Speed Controller AX 1668 F 24 pin Fdd spindle motor circuit RPM 777 AN8235S D012 AC motor current limiter panasonic ac servo motor
    Text: Panasonic ICs for Motor AN8235S 3.5-inch FDD Spindle Motor Controller • Overview Unii I mm T h e A N 823 5S is an 1C developed for controlling the 3.5-inch F D D s' belt type spindle motors. Using the digital FG servo system, it can easilly realize adjustment-free


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    AN8235S AN8235S Fdd spindle motor circuit 300 panasonic servo motor AC Motor Speed Controller AX 1668 F 24 pin Fdd spindle motor circuit RPM 777 D012 AC motor current limiter panasonic ac servo motor PDF

    AC motor current limiter

    Abstract: 300rpm 6v dc motor panasonic ac servo motor AX 1668 F Fdd spindle motor circuit 300 high rpm 5V dc motors AX 1668 F 24 pin 132F AN8235S D012
    Text: Panasonic ICs for Motor AN8235S 3.5-inch FDD Spindle Motor Controller • Overview Unii I mm T h e A N 823 5S is an 1C developed for controlling the 3.5-inch F D D s' belt type spindle motors. Using the digital FG servo system, it can easilly realize adjustment-free


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    AN8235S AC motor current limiter 300rpm 6v dc motor panasonic ac servo motor AX 1668 F Fdd spindle motor circuit 300 high rpm 5V dc motors AX 1668 F 24 pin 132F D012 PDF

    1rf830

    Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
    Text: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*


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    IRFQ20/Q21/822/823 IRF820R/821R/822R/823R IRF820, RF821, 1RF822, IRF823 IRF820R, IRF821R, IRF822R IRF823R 1rf830 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820 PDF

    D 823 transistor

    Abstract: transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f
    Text: rz7 SGS-THOMSON [ÜD g»iIL[l RDD(gi IRF 820/FI-821/FI IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF820 IRF820FI 500 V 500 V 3.0 3.0 IRF821 IRF821FI 450 V 450 V 3.0 3.0 IRF822 IRF822FI 500 V 500 V 4.0 4.0 IRF823 IRF823FI


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    820/FI-821/FI 822/FI-823/FI IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI D 823 transistor transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f PDF

    N 821 Diode

    Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
    Text: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822


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    IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI 820/FI-821/FI 822/FI-823/FI N 821 Diode transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821 PDF

    ts 4052

    Abstract: 2sc 5241
    Text: High Speed Switching Transistors FX series B ipolar transistors NPN ITO-220 TO -220 A bsolute M axim um Ratings VcEO V ebo Ic [V] [V] [A] 2SC4051 4052 Type No. E lectrical C haracteristics VcE V cE O IlFE (min) V be d jc (sat) (sat) (m ax) (m ax) (max) ton


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    ITO-220 2SC4051 ITO-220 FTO-220 ts 4052 2sc 5241 PDF

    D 823 transistor

    Abstract: BF56 BF821S
    Text: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage • High Speed Switching Transistore HFX series ITO-220 MTO-3P TO-220 Bipolar transistors NPN Electrica Characteristics Absolute Maximum Ratings V cE O hFE ton V cE V be 0jc fr ts tf (sat) (sat) (min) (max) (max) (max) (typ) (max) (max) (max)


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    ITO-220 O-220 O-220 ITO-220 2SC4230 2SC4940 FTO-220 PDF

    55TI

    Abstract: No abstract text available
    Text: High Voltage* High Speed Switching Transistors H F X series IT 0 - 2 2 0 T O -220 Bipolar transistors N PN Type No. Absolute Maximum Ratings Electrical C haracteristics V ceo E IA J h FE VcE V be (min) (sat) (max) [V ] (sat) (max) d\G VcBO VCEO V ebo lo


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    2SC4230 ITO-220 ITO-220 2SC4940 Pig84-4 55TI PDF

    D 823 transistor

    Abstract: transistor IRF 450 821 transistor irf transistors irf821 IRF820 IRF820FI IRF821FI IRF822 IRF822FI
    Text: 30E D M 7cj5ci237 OQETflQ? 0 • ¿ Z T SGS-THOMSON ^7# RiöD [S IiIL[l©¥ S®Rflö©i S 6 S-THOMSON TYPE IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI Voss 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V ^DS(on 3.0 n 3.0 fi 3.0 fi


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    820/FI-821/FI 822/FI-823/FI IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI D 823 transistor transistor IRF 450 821 transistor irf transistors PDF

    transistor 123 DL

    Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
    Text: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


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    AOL1444 AOL1444 DDD50% transistor 123 DL TRANSISTOR 8FB a406 transistor A7N transistor PDF

    transistor a7n

    Abstract: DIODE A7N A7N transistor 1df diode transistor 123 DL
    Text: AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power


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    AOL1408 AOL1408 transistor a7n DIODE A7N A7N transistor 1df diode transistor 123 DL PDF

    Untitled

    Abstract: No abstract text available
    Text: W79E825/824/823/822 Data Sheet 8-BIT MICROCONTROLLER Table of Contents1 2 3 4 5 6 7 8 9 10 11 GENERAL DESCRIPTION . 4 FEATURES . 5


    Original
    W79E825/824/823/822 PDF

    W79E825ADG

    Abstract: W79E825 w79e824adg W79E822BDG
    Text: W79E825/824/823/822 Data Sheet 8-BIT MICROCONTROLLER Table of Contents1 2 3 4 5 6 GENERAL DESCRIPTION . 4 FEATURES . 5


    Original
    W79E825/824/823/822 W79E825ADG W79E825 w79e824adg W79E822BDG PDF

    822 sop20

    Abstract: No abstract text available
    Text: W79E825/824/823/822 Data Sheet 8-BIT MICROCONTROLLER Table of Contents1 2 3 4 5 6 GENERAL DESCRIPTION . 4 FEATURES . 5


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    W79E825/824/823/822 822 sop20 PDF

    D 823 transistor

    Abstract: 821 transistor
    Text: UMC3N/FMC3A h 7 > V ^ ^ /Transistors UMC3N FMC3A r :a.77il/$ —J\/ K K ‘7 > v ^ ^ / D u a l Mini-Mold Transistor PNP/NPN '> U = I> h 7 > y ^ $ Epitaxial Planar PNP/NPN Silicon Transistor Z .'f y ^- i&/Switching Circuit • #i-ff$~$>£!E/Dimensions U n it: mm


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    77il/$ D 823 transistor 821 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • ISIP Ô23b320 001724b S S M B T 4126 PNP Silicon Sw itching Transistor SIEMENS/ SPCL-, SEMICONDS _ T - 3 7 - I5 " High current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Type M arking Ordering code for ve rsio ns in bulk Ordering code for


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    23b320 001724b S3b32Q PDF

    Untitled

    Abstract: No abstract text available
    Text: Darlington Transistors D a rlin g to n P o w e r T r a n s is to r s Bipolar transistors T ype No. E IA J Absolute Maximum Ratings Electrical Characteristics VCBO VOEO V ebo lo Ib Pt Tstg Tj sus (min) [V ] [V ] [V ] [A ] [A ] [W ] [•c] [•c] [V ] 100


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    2SD1022 2SB1282 ITO-220 ITO-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: CZT31C CZT32C Central" NPN PNP Semiconductor Corp. SURFACE MOUNT 2.0W COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for sur­


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    CZT31C CZT32C CZT32C OT-223 CP208 CP608 14-November PDF

    JRF820

    Abstract: F820R
    Text: 2 3 H A R R IS IR F 820/ 821/ 822/823 IR F 820 R /8 2 1R /822 R /823 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package T O -2 2 0 A B TOP VIEW • 2 .2 and 2.5A , 4 5 0 V - 5 0 0 V • rD S ° n = 3.on and 4 .0 ÎÎ DRAIN


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    IRF820, IRF821, IRF822, IRF823 IRF820R, IRF821R, IRF822R IRF823R JRF820 F820R PDF

    npn transistor w16

    Abstract: 1608B 2SC3590
    Text: SANYO SEMICONDUCTOR 15E CORP D • 1 7 cH?D7f ci 0004404 T'33~U 2SC3590 201OA NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Horizontal Deflection Output Applications Features . Fast switching speed. , Low saturation voltage. . Adoption of MBIT process.


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    2SC3590 r-33-ii 200MU npn transistor w16 1608B 2SC3590 PDF

    marking code nt amplifier

    Abstract: D 823 transistor
    Text: Central" CJD31C NPN CJD32C PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DRÂKI! DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package


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    CJD31C CJD32C CJD31C, 26-September marking code nt amplifier D 823 transistor PDF

    2SB113

    Abstract: 2SD1665
    Text: 2SD1665M/2SD1857 Is ~7 > V 7s £ /Transistors x 2 S D 1 6 6 2 S D 1 8 5 5 M e ^ # ' > 7 ^ 7 V - ^ N P N '> • ; = ] > h Epitaxal Planar N PN Silicon Transistors /Medium Power Amp. 7 • • JF^Tj-;i[2|/Dimensions Unit : mm 1) raifi/3: X ' $> -5 o B V c e o = 120V


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    2SD1665M/2SD1857 2SB113 2SB1236 2SD1665 PDF

    2SC2120

    Abstract: 2sC2120 transistor Audio Power Amplifier TOSHIBA 2SC2120-Y 2SC2120-O 2SC2120-0 2SA950 2SC2120 0 transistor 2sc2120 ic 824 J
    Text: J D > N P N I^ ICON o NPN 9 5/ 7 ^ 5 JW B h EPITAXIAL > 9 ^ TRANSISTOR r % P C T B S C (P C T PROCESS 2SC 2120 A udio Pow er A m p l if i e r A p p l i c a t i o n s V* : hpBj = 100~ -320 2SA950 ¿ a y / J / y i i J K i N t o 1W O u t p u t A p p l i c a t i o n s


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    2sc2120 2SA950 Ta-251C 2SC2120 2sC2120 transistor Audio Power Amplifier TOSHIBA 2SC2120-Y 2SC2120-O 2SC2120-0 2SA950 2SC2120 0 transistor 2sc2120 ic 824 J PDF