D-111 TRANSISTOR Search Results

D-111 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

D-111 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TMCM-111-56 Abstract: PD-111-56 TMCM-111-56 manual "Stepper Motors" for ATmega32 stepper motor interfacing circuits of atmega32 NEMA-23 microcontroller atmega32 stepper motor coil termination TMC428 TMCM-110-42 Text: PANdrive PD-111-56 and TMCM-111-56 56mm / NEMA-23 Stepper Motor Mechatronic Module TMCM-110-42 Electronics Manual Version: 1.22 October 30th, 2007 Trinamic Motion Control GmbH & Co. KG Sternstraße 67 D - 20357 Hamburg, Germany http://www.trinamic.com TMCM-111-56 Manual	Original	PD-111-56 TMCM-111-56 NEMA-23 TMCM-110-42 TMCM-111-56 01-Mar-05 27-Jun-05 9-Jun-06 25-Oct-06 PD-111-56 TMCM-111-56 manual "Stepper Motors" for ATmega32 stepper motor interfacing circuits of atmega32 microcontroller atmega32 stepper motor coil termination TMC428	PDF
245A-02 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per	OCR Scan	h3b7254 MIL-S-19500/ O-116) 245A-02	PDF
2N3820 Abstract: No abstract text available Text: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS	OCR Scan	2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2N3715 2N3716 2N3820	PDF
Untitled Abstract: No abstract text available Text: HTE VA RI -L CO INC D • TM37b2M QQQlGSb 4 ■ VR L T-50-15 VCO-111 Voltage Controlled Oscillator 1500-2750 MHz DESCRIPTION The VCO-111 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar	OCR Scan	TM37b2M T-50-15 VCO-111 VCO-111 6061-T6. UNC-38 QQ-N-290,	PDF
Untitled Abstract: No abstract text available Text: LINEAR TECHNOLOGY CORP 43E D • SSlSMbfl 0D051A2 7 « L T C RH1011 ■— T -7 3 -5 3 Voltage C om parator DESCRIPTION ABSOLUTE M A X IM U M RATINGS The RH1011 is a general purpose comparator with significantly better input characteristics than the LM 111. Although pin compatible with the LM 111, it	OCR Scan	0D051A2 RH1011 RH1011	PDF
2N3392 equivalent Abstract: 2N3394 2N3394 equivalent 2N3391 2n3393 equivalent 92C3-426C3 2N3391A 2N3393 2N3392 3391A Text: G E SOLID STATE 3875081 G E SOLID STATE 0 1 D E Ï 3Û7S0Û1 0017=111 01E 17911 D r- W ' t l Transistors 2N3390-94,2N3391A Silicon Transistors TO-98 The 6E/RCA 2N3390-94, 2N3391A are planar, passivated	OCR Scan	DD17111 2N3390-94 2N3391A 2N3390-94, 2N3391A 2N3391 2N3391A. 2CS-427II 750fll 2N3392 equivalent 2N3394 2N3394 equivalent 2n3393 equivalent 92C3-426C3 2N3393 2N3392 3391A	PDF
transistor 800V 1A Abstract: No abstract text available Text: bOE D fll331fl? 000051b 111 • S N L B SEMELAB PLC SEMELAB 'T J 'S - v l? BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensionsin mm Designed for use in electronic ballast lighting applications	OCR Scan	fll331fl? 000051b BUL54B T0220 300/is transistor 800V 1A	PDF
sil1364 Abstract: PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa Text: 5 4 3 2 1 D D Inventec Corporation R&D Division C C Board name : Mother Board Schematic Project : M11D Santa Rosa Version : 0.1 Initial Date : March 22 , 2007 B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree Shin-Lin District, Taipei 111, Taiwan	Original	120ohm 200mA 15ohm 20mil 10mil sil1364 PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa	PDF
16 amp npn darlington power transistors Abstract: MOTOROLA TIP115 transistor BTA 006 Text: MOTOROLA Order this document by TIP110/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic M edium -Pow er Com plem entary Silicon Transistors T IP 1 1 0 . . . designed for general-purpose amplifier and low -speed switching applications. • • • • • T IP 111*	OCR Scan	TIP110/D TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 -220A TMP117* 16 amp npn darlington power transistors MOTOROLA TIP115 transistor BTA 006	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE ObE D • bb53T31 0 0 1 5 111 7 ■ PTB42001X PTB42002X J L T - 5 3 -/2 ? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz,	OCR Scan	bb53T31 PTB42001X PTB42002X PTB42001X PTB42002X	PDF
TIP NPN Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115 Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51	OCR Scan	TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP NPN TIP110 TIP111 TIP115 TIP116 TIP117 tip 115	PDF
Untitled Abstract: No abstract text available Text: APX b7E D • 1^53=131 OOSSMbM 111 N AMER PHILIPS/DISCRETE BSP40 to 43 ; v SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.	OCR Scan	BSP40 BSP40 BSP41 BSP42 BSP43 bbS3T31	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA R N 11 10F#R N 111 1F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1110F, RN1111F Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN1110F, RN1111F RN2110F, RN2111F RN1110F RN1111F	PDF
T1P112 Abstract: T1P111 Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51	OCR Scan	TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 23633T4 T1P112 T1P111	PDF

TLP115A Abstract: E67349 Text: TOSHIBA TLP115A TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO-IC T LP1 1 5A HIGH SPEED, LONG DISTANCE ISOLATED LINE RECEIVER U n it in mm MICROPROCESSOR SYSTEM INTERFACES 6 DIGITAL ISOLATION FOR A/D, D /A CONVERSION 5 4 111 COMPUTER-PERIPHERAL INTERFACES GROUND LOOP ELIMINATION	OCR Scan	TLP115A TLP115A E67349	PDF
TLP115 Abstract: E67349 Text: TOSHIBA TLP115 TOSHIBA PHOTOCOUPLER G aA M s IRED & PHOTO-IC TLP1 1 5 HIGH SPEED, LONG DISTANCE ISOLATED LINE RECEIVER U n it in mm MICROPROCESSOR SYSTEM INTERFACES 6 DIGITAL ISOLATION FOR A/D, D /A CONVERSION 5 4 111 COMPUTER-PERIPHERAL INTERFACES 't GROUND LOOP ELIMINATION	OCR Scan	TLP115 TLP115 E67349	PDF
MCD206 Abstract: BLV13 PHHI philips Trimmer 60 pf sot123 ceramic capacitor 47 pf MC-02C Text: 0020125 Philips Sem iconductors 75 B APX Product specification VHF power transistor ^ A U E P H ILIP S /D IS C R E TE b^E • Gold metallization ensures excellent reliability. MODE OF OPERATION c.w. class-B f MHz 175 111 O > Emitter-ballasting resistors for an	OCR Scan	BLV13 OT123 PINNING-SOT123 MBA45t MCD21 MCD206 BLV13 PHHI philips Trimmer 60 pf sot123 ceramic capacitor 47 pf MC-02C	PDF
2N4115 Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346 Text: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca\|l T O LL FR EE 800-526-4581 PNP	OCR Scan	NPWTO-111 fl35a 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346	PDF
AD149 Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17 Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3	OCR Scan	AD130 AD130â AD131 AD131â AD132 AD132â AD133 AD133â NS257 T0-18 AD149 ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17	PDF
irf113 Abstract: IRFF110 IRFF RFF-11 Text: SILI CON I X 1ÖE D INC ilicoont. C T ’S S ilic ix_ X M • 025*4735 001470 ^ 3 ■ IRFF110/111/112/113 in c o rp o r a t e d inci N-Channel Enhancement Mode Transistors T -^ o i -0 7 TO-205AF BOTTOM VIEW PRODUCT SUMMARY to PART NUMBER V BR\|DSS IRFF11Q	OCR Scan	AES473S IRFF110/111/112/113 O-205AF IRFF11Q IRFF111 IRFF112 IRFF113 Junction111/112/113 DQ147TE T-39-07 irf113 IRFF110 IRFF RFF-11	PDF
54h00 Abstract: 54H32 Text: LANSDALE SEMICONDUCTOR 17E D • 53^003 3 GQ0D302 b T - 5 H 1 Ill 111 1£ MOTOROLA INTEGRATED CIRCUITS 3OOO/74HO0 Series 3100/54H00 Series TTL III integrated circuits com prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a	OCR Scan	GQ0D302 3OOO/74HO0 3100/54H00 54H00) b-G7-07 14-LEAD 16-LEAD 54h00 54H32	PDF
Untitled Abstract: No abstract text available Text: Transistors with built-in Resistor UNRL110/111/113/114/115 Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.020±0.010 2 0.80±0.05 3 M Di ain sc te on na tin nc ue e/ d • Features • UNRL110 • UNRL111 • UNRL113 • UNRL114 • UNRL115	Original	UNRL110/111/113/114/115 UNRL110 UNRL111 UNRL113 UNRL114 UNRL115	PDF
sgs110 Abstract: SGS116 Text: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration	OCR Scan	TIP/SGS110-111-112 TIP/SGS115-116-117 TIP110, TIP111, TIP112 SGS110, SGS111, SQS112 O-220 OT-82 sgs110 SGS116	PDF
p504a Abstract: LB-10 GA NANA TLP504A TA525 E67349 TLP504 Text: TRANSISTOR COUPLER GZ3 TLP504A INFRARED LE D +P H O TO TRANSISTOR TLP504A HAS TUO CHANNELS FOP. HIGH DENSITY APPLICATIONS. 8 7 a s m m m r ti THIS Ufi IT IS A 8-LEAO OtP PACKAGE. =a . OATA LINE ISOLATION . TELEPHONE SIGNAL COUPLING IP 111 Ili lili . LIME/CABLE RECEIVER	OCR Scan	TLP504A TLP504A Ic/If50Z E67349 P504A TaS25Â LB-10 GA NANA TA525 E67349 TLP504	PDF

D-111 TRANSISTOR Search Results

D-111 TRANSISTOR Result Highlights (5)

D-111 TRANSISTOR Datasheets Context Search

TMCM-111-56

245A-02

2N3820

Untitled

Untitled

2N3392 equivalent

transistor 800V 1A

sil1364

16 amp npn darlington power transistors

Untitled

TIP NPN

Untitled

Untitled

T1P112

TLP115A

TLP115

MCD206

2N4115

AD149

irf113

54h00

Untitled

sgs110

p504a