Untitled
Abstract: No abstract text available
Text: HIGH PRECISION THICK FILM CHIP FIXED RESISTOR FEATURES 0.5% 50ppm/ High precision resistor with T.C.R. 50 ppm/ and tolerance 0.5%. Miniature and light weight. Suit for reflow and wave flow solder. Stable electrical capability,high reliability. Low assembly cost,suit for automatic SMT equipment.
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50ppm/
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Untitled
Abstract: No abstract text available
Text: THICK FILM CHIP NETWORK RESISTOR THICK FILM CHIP NETWORK RESISTOR FEATURES Miniature and light weight. Suit for reflow solder. Stable electrical capability, high reliability. Low assembly cost, suit for automatic SMT equipment. Superior mechanical and frequency characteristics.
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100ppm)
RCMT04
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MBRF16100CT
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR MBRF16100CT REVERSE VOLTAGE - 100 Volts FORWARD CURRENT - 16 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES ITO-220AB M B D PIN 1 2 3 J F G I MECHANICAL DATA Case : ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.70 grams
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MBRF16100CT
ITO-220AB
ITO-220AB
300us
MBRF16100CT
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HA022
Abstract: 10-35N2 0-50C8 HA335 1515N1 2-20C8 220n5 22-50C4 2-20N5 4735N
Text: HA www.vishay.com Vishay Sprague Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar FEATURES • Subminiature package size and light weight • Cylindrical case with axial or radial leads • 2 VDC to 50 VDC • 0.001 F to 68 μF • Operating temperature range: - 55 °C to + 125 °C
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MIL-PRF-49137
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
HA022
10-35N2
0-50C8
HA335
1515N1
2-20C8
220n5
22-50C4
2-20N5
4735N
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Relay schrack RU
Abstract: schrack ru 110 012 schrack rp 111 012 SCHRACK RP RELAY 24vdc 12FLA/60LRA Relay schrack RU 610 112 V23077 omr h 5vdc reed relay T73 24VDC 3V DC Motor RM3
Text: Catalog 1308242 Issued 3-03 PDF Rev 4-04 SELECTOR GUIDE Circuit Breakers P&B P&B P&B P&B P&B Series W57 W54 W58 W28 W51 Type Thermal Thermal Thermal Thermal Thermal Features Approximate Size and Weight (per pole) • Compact design • Quick connect terminals
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High Voltage Bus-bars
Abstract: FN 3359HV-1600-99
Text: High performance 3-phase filter • • • • Rated voltages 500VAC and 690VAC Small weight and compact packaging HV types designed for IT power networks Small leakage current • • • • Nennspannungen 500VAC und 690VAC Geringes Gewicht und kompakte Abmessungen
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500VAC
690VAC
500VAC
2700VDC
2150VDC
High Voltage Bus-bars
FN 3359HV-1600-99
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Untitled
Abstract: No abstract text available
Text: RPH 100 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating • Low thermal radiation of the case • Wide ohmic value range • Easy mounting • High overload capabilities • Reduced size and weight
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46ERGY
14-Jan-05
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HSSR7111
Abstract: No abstract text available
Text: DATA SHEET, Rev. F 53111 POWER MOSFET OPTOCOUPLER, 90 V/1 Ω, Hermetically Sealed, DSCC Approved 5962-9314001 Features: Applications: • • • • • • • • • • • • • • • • • • Hermetically Sealed 8-Pin Dual-In-Line package Small Size and Weight
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MIL-PRF-38534
HSSR7111
HSSR7111
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RPH 100
Abstract: No abstract text available
Text: RPH 100 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating • Low thermal radiation of the case • Wide ohmic value range • Easy mounting • High overload capabilities • Reduced size and weight
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08-Apr-05
RPH 100
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Untitled
Abstract: No abstract text available
Text: TDH-7050/7051 ENGINEERING DATA SHEET ON OPERATE-FIXED PERIOD 4 PDT, 10 AMP FEATURES ● ● ● ● ● ● ● Small size and weight High-reliability design Hermetically sealed High transient immunity Long life Low-power consumption Reverse Polarity Protection
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TDH-7050/7051
MIL-STD-883,
MIL-T-10727
SO-1056-8691
TDH-7050/51
MIL-R-6106
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Diode Gfg 75a
Abstract: P2HM755HA PDM755HA p2hm755h
Text: PDM755HA P2HM755HA MOSFET 75A 500V P2HM755HA P2HM755HA PDM755HA 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧
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PDM755HA
P2HM755HA
PDM755HA
Diode Gfg 75a
P2HM755HA
p2hm755h
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MNR14
Abstract: MCR03 MNR34 103 chip resistor Rohm
Text: MNR14 Resistors Chip resistor networks MNR14 0603x4 size zFeatures 1) Convex electrodes Easy to check the fillet after soldering is finished. 2) Small, light, rectangular 4-chip network Area ratio is 65% smaller than that of MNR34, while weight ratio has been cut 75%.
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MNR14
MNR34,
MCR03)
ISO-9001
MNR14
MCR03
MNR34
103 chip resistor Rohm
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TDH-6070
Abstract: m300d fd300 M300 relay S30-1
Text: TDH-6070/6071 ENGINEERING DATA SHEET ON RELEASE-FIXED PERIOD 2 PDT, 10 AMP FEATURES ● ● ● ● ● ● ● Small size and weight High-reliability design Hermetically sealed High transient immunity Long life Low-power consumption Reverse Polarity Protection
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TDH-6070/6071
MIL-STD-883,
1x10-8
MIL-T-10727
TDH-6070/71
MIL-R-6106
M300-D4A
301-D4F/-K
301-D4E/-J
MIL-S-12883/41B
TDH-6070
m300d
fd300
M300 relay
S30-1
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode mtm OUTLINE DE5LC20U Unit-mm Weight 0.326g Typ Package : E-pack 200V 5A Feature • SM D • SM D • trr= 35ns • trr=35ns • Low Noise Main Use • Sw itching Regulator >D C /D C n y t K — S • DC/D C Converter
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DE5LC20U
---5LC20U
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F5LC40
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode O U T L IN E SF5LC40 Weight 1.9« T yp 10 o ^ * !> X W ) 400V 5A Date code Feature Control No. •i& y 'fx • Low Noise • trr=50ns • tnr=50ns • 711^-10 K • Full Molded am*} • Dielectric Strength 2kV 2kV ( S II
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SF5LC40
F5LC40
110ms
J533-1)
F5LC40
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smd g4l
Abstract: RC25C
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S6M Unit-mm Weight 0.326g Typ 60V 3A Feature • SM D »SMD 1Tj=150°C ' P rrsm Rating 1 High Io Rating -Small-PKG • Tj=150°C • P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use 'D C /D C Z I y j K — 3>
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diode g4l
Abstract: smd g4l SMD diode JB 4/5/32R2024/25/g4l smd
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE5S6M Unit-mm Weight 0.326g Typ 60V 5A Feature »SMD 1Tj=150°C ' P rrsm Rating 1 High Io Rating -Small-PKG • SMD • Tj=150°C • P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use 'D C /D C Z I y j K —3>
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--20V.
diode g4l
smd g4l
SMD diode JB
4/5/32R2024/25/g4l smd
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Untitled
Abstract: No abstract text available
Text: 5 Watt AC-DC Switchers SERIES 5AC Lowest Profile! 0.5” ht. Up to 5 Watts H i R eliab ility H i E fficien cy/Iso lated Single and D u al Outputs R eg u lated { 5 W att A C - D C S w itchers FEATURES • Low profile 0.500” • Low weight • Encapsulated semiconductors, conservatively
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90-130VAC
VAC/60
145Grcms
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1ss37
Abstract: No abstract text available
Text: smm Small-Signal High-Voltage Schottky Barri r Di odes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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1SS345
1SS358
1SS350
1SS351
1SS355
1SS356
1SS375
VR-10V
7T03Q,
7T03C,
1ss37
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Untitled
Abstract: No abstract text available
Text: SA\YO P o w e r S c h o t t k y B a r r i e r Di o d e s F o r L a r g e - S i g n a l Use M L t y p e (Mi cal ess Type) Sanyo S c h o t t k y b a r r i e r diodes (SBD) have been d e ve lop ed by our original technology. They are a v a i l a b l e for m aki n g sets smaller in size and lighter in weight.
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SB30-09J
SB50-09J
T0-220ML
SB80-09J
MT941214TR
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package S ho 2.1 1.7 0.1 typ SFH 420 SFH 425 CL 0.9 0.7 •y0.\8my J Cathode/Colledor marking 0.12 / m|0.6 0.4 Cathode/Colledor Approx. weight 0.03 g Collector/Cathode marking
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I03ff.
169ff.
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode single Diode m n m DE10P3 o u tlin e Unit: mm Package \ E-pack Weight 0.326k Typ 30 V 10A I 2 I Feature • SMD • SMD • iSffiVF=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-RKG Main Use • Reverse connect protection for
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DE10P3
J532-1
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE Package I FTO-220G S G 20T C 1 5 M Unit : mm Weight J.54g Typ 150V 20A 4.5 Feature • Tj=i5(rc • Tj=150°C • High lo Rating • 7 / iæ - ju ^ • I r =30^A • Full Molded • *& « £ « & : u c < u • Resistance fo r thermal run-away
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FTO-220G
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BZY9
Abstract: No abstract text available
Text: BZY9 1 series Voltage Range 7.5 - 75 Volts 5 00 0 W att Peak Pulse Power 100 W att Steady State @ 25°C 75 W att Steady State @ 65°C M ECHANICAL CHARACTERISTICS FEATURES Polarity: Indicated by direction of zener symbol • Weight: 14 grammes excluding mounting
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300/uS
100juS
BZY91C
BZY9
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