D-636 TRANSISTOR Search Results

D-636 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

D-636 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IGBT Power Module siemens ag Abstract: BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring Text: Investigation of the static and dynamic current distribution in paralleled IGBT modules A. Mauder and W. Scholz Siemens AG, Semiconductor Group, Balanstr. 73, D-81541 Munich, Germany Tel.: +89/636-24197 Mauder , +89/636-28143 (Scholz); Fax: +89/636-22522	Original	D-81541 IGBT Power Module siemens ag BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring	PDF
BC638 Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80	Original	BC636/D BC636 BC638 BC640 BC636/D* BC638 bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola	PDF
bc638 motorola Abstract: No abstract text available Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80	Original	BC636/D BC636 BC638 BC640 BC636/D* bc638 motorola	PDF
2N4351 MOTOROLA Abstract: 3N170 3c169 DFM12 3N169 Text: MOTOROLA SC { D I O D E S / O P T O } 34 636 72 55 M O T O RO LA SC DIODES/OPTO DE\|b3b755S CID3ÛD41 3^ c 38041 FIËLD-EFFECT TRANSISTORS DICE (continued) D T - JJT- Z - i 3C169 DIE NO. LINE SOURCE — DFM122 This die provides performance equal to or better than that of	OCR Scan	b3b755S DFM122 2N4351 3N169 3N170 3N171 MMCS0122 3C169 2N4351 MOTOROLA 3c169 DFM12	PDF
Untitled Abstract: No abstract text available Text: BC635/636 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.	Original	BC635/636 StyleTO-92	PDF
ST2S05 Abstract: st2506 Text: SLOTTED OPTSCAL SWITCH QPTDELECiROHiCi CNY36 £ h D1 02 J L l O r D \| \ 0 b\| bt SECTION X - X LEAD PROFILE T SYMBOL MILLIMETERS MIN. MAS. A 107 11.0 A. 3,0 3.2 b ' .800 .750 b, .50 MOM 0, 11.5 12.3 3.0 D, 3.3 7.S 6.9 * 2.3 2.8 . * E? 6.15 636 L B.00	OCR Scan	CNY36 27nim ST2S05 ST2506 ST2S05 st2506	PDF
transistor C 639 W Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639 Text: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A	OCR Scan	150mA) F139B. CB-76 transistor C 639 W transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639	PDF
hc911 Abstract: HC9115 7252 TRANSISTOR Text: MO TOROLA SC -CLOGIO fll DË\|b3t.7252 DOVVTSb ^ 636 7 2 5 2 MOTOROLA SC L O G IC M O TO RO LA 89D 77956 • SEMICONDUCTOR TECHNICAL DATA M C 5 4 /7 4 H C 9 1 14 M C 5 4 /7 4 H C 9 1 15 Product Preview Nine-W ide Schm itt-Trigger Buffers with Open-Drain Outputs	OCR Scan	MC54/74HC9114 MC54/74HC9115 MC54/74HC9115 HC9114 HC9115 hc911 HC9115 7252 TRANSISTOR	PDF
BC640 Abstract: bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143 Text: BC 636 • BC 638 • BC 640 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 635/BC 637/BC 639 Applications: For com plem entary AF driver stages.	OCR Scan	635/BC 637/BC BC640 bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143	PDF
TRANSISTOR 636 Abstract: pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639 Text: BC 636 g Q 638 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP S ILIC IU M , PLA N A R E P IT A X IA L BC 640 Compl. of BC 635, BC 637, BC 639 - Driver stages of audio amplifiers " " Etages Drivers d'am plificateurs BF Maximum power dissipation	OCR Scan	150mA) CB-76 TRANSISTOR 636 pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639	PDF
bc 352 b Abstract: siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366 Text: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360	Original	Q68000-A3360 Q68000-A2285 Q68000-A3361 bc 352 b siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366	PDF
bc 640 Abstract: BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636 Text: PNP Silicon AF Transistors BC 636 … BC 640 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 635, BC 637, BC 639 NPN ● 2 3 1 Type Marking Ordering Code BC 636 BC 638 BC 640 – Q68000-A3365	Original	Q68000-A3365 Q68000-A3366 Q68000-A3367 bc 640 BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636	PDF
transistor BC 236 Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor Text: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:	OCR Scan	IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor	PDF
222259116641 Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859 Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4	Original	BLV859 AN98013 SCA57 222259116641 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module	PDF

BC639 Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138 Text: BC 635 • BC 637 • BC 639 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 636/BC 638/BC 640 Applications: For com plem entary AF driver stages.	OCR Scan	636/BC 638/BC BC639 r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation	OCR Scan	2SC5011	PDF
transistor NEC D 882 p Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain	OCR Scan	2SC5011 2SC5011-T1 transistor NEC D 882 p 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P	PDF
bc 540 Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635 Text: o general purpose transistors — plastic case transistors usage général — boîtier plastique M axim um ratings Type NPN PNP THOMSON-CSF Characteristics at 25°C Ptot VCEO mW (V) BC 559 BC 559 B BC 559 C 500 25 125 200 420 BC 560 BC 560 B BC 560 C 500	OCR Scan	BCW90 CB-76 bc 540 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635	PDF
" transistor" fgs 3 Abstract: Fly DS 100 Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current	OCR Scan	O-220 C67078-S1342-A2 " transistor" fgs 3 Fly DS 100	PDF
GE-MOV Abstract: varistor 82z2 Varistor RU 22z1 VARISTOR 56z2 VARISTOR 39Z1 gemov 18Z1 capacitor 47z1 33Z1 Text: ZA SERIES R EPLA C EM EN T FO R the following when used as transient suppressor: • Selenium Tryectors • Zener Diodes • Silicon Carbide • Gas Discharge Tubes • R-C Networks non-dv/dt • Neon Bulbs • Electronic Crowbar Circuits APPLICATIONS •	OCR Scan		PDF
transistor C636 Abstract: case sot30 BCX75 C637 BCX76 SOT-30 Text: BCX 75, BCX76 PNP Transistors for AF pre-stages, driver stages and switching applications B C X 7 5 and BCX 76 are epitaxial PNP silicon planar transistors in a package 10 A 3 DIN 41868 sim. SO T-30 . The transistors are suitable for use in AF preand driver stages as well as for switching applications.	OCR Scan	BCX76 BCX75 OT-30) Q62702-C 636-S1 Q62702-C636-S2 Q62702-C636-S3 Q62702-C637-S1 Q62702-C637-S2 Q62702-C637-S3 transistor C636 case sot30 C637 BCX76 SOT-30	PDF
B0415 Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063 Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2	OCR Scan	BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063	PDF
diodo 1n4001 Abstract: 3L4 MOSFET VR 100K preset kl 05 diodo K38 mosfet DIODO SIEMENS 3l4 diode B64290-K38-X38 diodo detector POT 100K preset Text: >viyj>ciyi/i P re s e t/A d ju s ta b le O u tp u t C M O S In v e r tin g S w itc h in g R e g u la to rs The MAX635/MAX636/MAX637 inverting switching regu lators are designed for minimum component DC-DC conversion in the 5mW to 500mW range. Low power applications require only a diode, output filter	OCR Scan	MAX635/MAX636/MAX637 500mW MAX635/636/637 50ki2, 100pF diodo 1n4001 3L4 MOSFET VR 100K preset kl 05 diodo K38 mosfet DIODO SIEMENS 3l4 diode B64290-K38-X38 diodo detector POT 100K preset	PDF
MAX635XCPA Abstract: MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA Text: 19-0918; Rev 0; 5/91 Preset/A djustable O utput CMOS inverting S w itching Regulators _ A p p lica tio n s Minimum Component, High-Efficiency DC-DC Converters Portable Instruments Battery Power Conversion Board Level DC-DC Conversion _ F e a tu re s	OCR Scan	MAX635/MAX636/MAX637 500mW MAX635/636/637 100pF MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA	PDF

D-636 TRANSISTOR Search Results

D-636 TRANSISTOR Result Highlights (5)

D-636 TRANSISTOR Datasheets Context Search

IGBT Power Module siemens ag

BC638

bc638 motorola

2N4351 MOTOROLA

Untitled

ST2S05

transistor C 639 W

hc911

BC640

TRANSISTOR 636

bc 352 b

bc 640

transistor BC 236

222259116641

BC639

Untitled

transistor NEC D 882 p

bc 540

" transistor" fgs 3

GE-MOV

transistor C636

B0415

diodo 1n4001

MAX635XCPA