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    D.331 TRANSISTOR Search Results

    D.331 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    D.331 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12S10

    Abstract: C67078-S3114-A2 331 transistor
    Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		O-218 C67078-S3114-A2 12S10 C67078-S3114-A2 331 transistor PDF

    C67078-S3114-A2

    Abstract: No abstract text available
    Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		O-218 C67078-S3114-A2 C67078-S3114-A2 PDF

    VE880

    Abstract: LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1
    Text: A D V A N C E D C O P Y Le88311/331 Dual Channel Tracking Battery VoicePort™ Device VE880 Series APPLICATIONS „ „ „ „ „ ORDERING INFORMATION Voice enabled Cable and DSL Modems Voice over IP/ATM - Integrated Access Devices IAD Residential VoIP Gateways and Routers


    Original     		Le88311/331 VE880 Le88311/331 LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1 PDF

    TM4C1230E6PM

    Abstract: RTCC active smd semiconductor components marking codes 2014
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright


    Original     		TM4C1230E6PM LM4F111E5QR) RTCC active smd semiconductor components marking codes 2014 PDF

    Untitled

    Abstract: No abstract text available
    Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright


    Original     		TM4C1230E6PM LM4F111E5QR) PDF

    transistor 21Y

    Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
    Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements


    OCR Scan     		/331A MIL-S-19500/ 2N1553A 2N1556A 2N1554A 2N1555A 2N1556A transistor 21Y 2N1556 TRANSISTOR 3052 2N1555 J717 2N1553 PDF

    S321RDB

    Abstract: s 316 hwb S321HWB S315GWA 7 segment cc S511GWA infra red 11 pin 7 segment LED pin configuration s322 10NOPIN
    Text: EVERLIGHT ELECTRONICS • BM D 3 M 15703 I ■ INFRA RED/SUPER-INFRARED LEDS J / - ^ j 00G D 002 3 ■ EVEC LED INDICATOR LAMPS 1 SILICON PIN PHOTODIODES PHOTO TRANSISTORS | 50 30 G IB f Jjîl jjfty “ ■ fl t 3 PT 331 C PT 202 C 7 - SEGMENT DIGIT DISPLAYS


    OCR Scan     		3M15703 S315GWA S321RDB s 316 hwb S321HWB S315GWA 7 segment cc S511GWA infra red 11 pin 7 segment LED pin configuration s322 10NOPIN PDF

    BSP108

    Abstract: transistor marking ST4
    Text: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended


    OCR Scan     		BSP108 OT223 BSP108 transistor marking ST4 PDF

    BUK657

    Abstract: BUK657-400A BUK657-400B T0220AB IRF FET
    Text: N AMER PHILIPS/DISCRETE 2SE D m ^53=331 □□2070Ü 7 PowerMOS transìstor Fast Recovery Diode FET BUK657-400A BUK657-400B T - 3 7 -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		BUK657-400A BUK657-400B T-37-/3 BUK657 -40QA -400B BUK657-400B T0220AB IRF FET PDF

    Untitled

    Abstract: No abstract text available
    Text: - 01 331 07 ODGObfib m b bOE D SENELAB PLC •SHLB '"T'3iì*3>l =^i SEME MOS POWER 4 IGBT LAB SML50G60BN SML50G50BN 600V 500V 50A 50A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Parameter Collector-Emitter Voltage


    OCR Scan     		SML50G60BN SML50G50BN SML50G60/50G50BN PDF

    philips bfq

    Abstract: BFQ263 BFQ263A RK 100
    Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with


    OCR Scan     		BFQ263; BFQ263A 711062b 0045bi 711Qfl2b T-33-05 philips bfq BFQ263 BFQ263A RK 100 PDF

    2U37

    Abstract: BU2520af BY228 TRANSISTOR BO 345
    Text: N AMER PHILIPS/DISCRETE b^E D Bi t,bS3*331 DDEöBbR 5*14 « A P X Philips Semiconductors _ ProductSpec Silicon Diffused Power Transistor BU2520AF G E N E R A L D ESC RIPTIO N New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in


    OCR Scan     		BU2520AF OT199; 2U37 BU2520af BY228 TRANSISTOR BO 345 PDF

    d331 npn transistor

    Abstract: D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor
    Text: SANYO SEMICONDUCTOR CORP 1EE 2SD330, 331 2SB514, 515 0004^05 Triple Diffused Planar Silicon Transistors N P N / pn p 2012 201OA D | _ 7 en 7 G 7 b Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­


    OCR Scan     		2SD330, 2SB514, Q004T05 2SB514 DissipatioBH81 0DGB752 d331 npn transistor D331 transistor la 1201 sanyo D331 PNP D330 NPN transistor transistor d331 d331 D331 NPN TRANSISTOR B514 D330 transistor PDF

    mosfet J 3305

    Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
    Text: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,


    OCR Scan     		MTP7P06 b3b7254 0CHfl703 mosfet J 3305 221A-06 72SM AN569 MTP7P06 TMOS Power FET PDF

    D331 transistor

    Abstract: d331 npn transistor D330 NPN transistor D331 PNP transistor D331 TRANSISTOR B514 D331 NPN d330 transistor D331 transistor D331 PNP
    Text: SANYO SEMICONDUCTOR CORP " îâ Ë _ D- | _ 7 en 7 G 7 t 2SD330, 331 0004^05 r - 3 3 - 0 ? 201OA 2SB514, 515 N P N / pnp Triple Diffused Planar Silicon Transistors 2012 Low Frequency Power Amp Applications 397D Especially suited for use in output stage of 10W AF Power amp. The only differ­


    OCR Scan     		2SD330, 2SB514, r-33-0? 2SB514 B1181 B1252 D331 transistor d331 npn transistor D330 NPN transistor D331 PNP transistor D331 TRANSISTOR B514 D331 NPN d330 transistor D331 transistor D331 PNP PDF

    S25610

    Abstract: Pulse Dialing in rotary phones S2560G S2560A
    Text: •> GOULD A M I S e m ic o n d u c to rs S25610 □ Independent Select Inputs for Variation of Dialing Rates 10pps/20pps , Mark/Space Ratio (331/3 -662/31 40-60), Interdigit Pause (400ms/800ms). Features □ Complete Pin Compatibility With S2560A and S2560G Pulse Dialer Allowing Easy Upgrading of


    OCR Scan     		S25610 18-Digit S25610 Pulse Dialing in rotary phones S2560G S2560A PDF

    BC369

    Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
    Text: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.


    OCR Scan     		D027S43 BC369 BC368/BC369 BC369 TRANSISTOR bH Silicon Epitaxial Planar Transistor philips PDF

    Untitled

    Abstract: No abstract text available
    Text: • i<302271 0 D 5 4 1 7 G flb2 ■ [g HARRIS HAS IRFF330/331/332/333 IRFF330R/331R/332R/333R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features TO-2Q5AF • 3 .0 A and 3 .5 A , 3S0V - 400V • rD S o n = 1-Oft and 1 -5 0 • S in g le P u lse A valan ch e En erg y R ated*


    OCR Scan     		IRFF330/331/332/333 IRFF330R/331R/332R/333R FF330, FF331, RFF332, FF333 IRFF330R, IRFF331R, FF332R /RFF333R PDF

    DF 331 TRANSISTOR

    Abstract: transistor df 331
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		O-218 C67078-S3114-A2 fi23SbD5 Gfl47b7 0Dfi47bà DF 331 TRANSISTOR transistor df 331 PDF

    sdt9303

    Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
    Text: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @


    OCR Scan     		2N3441 2N3054 2N6258 MIL-S19500/ 2N3055 2N3441 2N3442 2N3771 2N3772 sdt9303 2N3441 JAN 2N3772 SOLITRON PDF

    transistor B A O 331

    Abstract: D F 331 TRANSISTOR
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor Type BUZ 331 CO i • N channel • Enhancement mode • Avalanche rated 500 V Id Tc ^DS on Package 1> Ordering Code 8.0 A 35 ’C 0.8 Q TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		O-218 C67078-S3114-A2 SILO3821 transistor B A O 331 D F 331 TRANSISTOR PDF

    DF 331 TRANSISTOR

    Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
    Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


    OCR Scan     		O-218AA C67078-S3114-A2 00--------V O-218AA DF 331 TRANSISTOR D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor PDF

    SDT9309

    Abstract: 2N3055 2N3055H SDT9302 SDT9301 2n3442 ic 331
    Text: -JFplitran [p[fiì ®l!D Tr ©ÄTTÄIL® Devices. Inc. SINGLE DIFFUSED NPN MESA TRANSISTORS Ü /MMÏÏ? K M DEVICE TYPE VCEO hpE ( VOLTS MIN/MAX ic (A Vc e (sat) MAX (V) (A) ic Isb PULSE VCE(V) Ic(A ) (sec) ÍT MIN (MHz) PT MAX (W) CASE CHIP TYPE TYPE


    OCR Scan     		2N3441 2N3054 SDT31303 SDT31305 SDT31307 10/S0 SDT9301 SDT9302 SDT9303 SDT9304 SDT9309 2N3055 2N3055H 2n3442 ic 331 PDF

    C 331 Transistor

    Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
    Text: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.


    OCR Scan     		O-116 14-lead C 331 Transistor transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331 PDF