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    DM 321

    Abstract: magnetoresistance element
    Text: SONY CORP/COMPONENT PRODS M^E D &3&R3&3 D0031b0 ^ DM-231 SO N Y . Magnetoresistance Element / *•Cq Description r DM-231 a magnetic sensor using magnétorésist­ ance effect is. composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is


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    D0031b0 DM-231 150mVp-p A3fl23fi3 QQQ31b3 DM-231 T-65-05 DM 321 magnetoresistance element PDF

    LAS1605

    Abstract: 12 VOLT 2 AMP regulator LAS16U
    Text: SEM T EC H CORP SÔE D • 0 1 3 1 1 3 ^ DG DB IS T 3TS * S E T 2 AMP POSITIVE VOLTAGE REGULATORS LAS 1600 MAXIMUM UNITS v,N 35 40 ('M2) Volts Power Dissipation Pd Internally Limited*3) Thermal Resis­ tance Junction To Case 0JC 2.5 °C/Watt Operating Junc­


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    000315e] 22julF 00031h4 074-U LAS1605 12 VOLT 2 AMP regulator LAS16U PDF

    074-U

    Abstract: 1612B 16A05 16A12 16A15
    Text: SEM T EC H CORP SÔE D • 0 1 3 1 1 3 ^ DG DB IS T 3TS * S E T 2 AMP POSITIVE VOLTAGE REGULATORS LAS 1600 MAXIMUM UNITS v,N 35 40 ('M2) Volts Power Dissipation Pd Internally Limited*3) Thermal Resis­ tance Junction To Case 0JC 2.5 °C/Watt Operating Junc­


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    000315e] 00031h4 074-U 1612B 16A05 16A12 16A15 PDF

    LAS1605

    Abstract: LAS16U 12 VOLT 2 AMP regulator 1612B 16A05 16A12 LAS16CB las 1216 LAS-16U voltage regulator
    Text: SEMTECH CORP SflE ]> • 013113^ □G D31 5ci 3TS * S E T 2 AMP POSITIVE VOLTAGE REGULATORS a M AXIM U M UNITS v,N 35 40 <1>(2) Volts Power Dissipation Pd Internally Limited*3) Thermal Resis­ tance Junction To Case 0JC 2.5 °C/Watt Operating Junc­ tion Tempera­


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    0D031b3 22m-F 00031h4 074-U LAS1605 LAS16U 12 VOLT 2 AMP regulator 1612B 16A05 16A12 LAS16CB las 1216 LAS-16U voltage regulator PDF