ic ca 810 audio amp
Abstract: Samsung uhf modulator KA2985 KA2985BD 20SOP300 uhf rf modulator rf modulator power supply samsung tv samsung RF modulator
Text: MM - 97 - D015 SPECIFICATION VER 1 for KA2985BD SYSTEM LSI BUSINESS SAMSUNG ELECTRONICS CO. SPECIFICATION(VER 1) KA2985BD UHF RF MODULATOR Revision History Revision 1 (Ver. 1) : < Page 8> * Vo * Mp * Ms Min 78.5 73 75 Typ 81.0 80 - Max 83.5 87 115
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KA2985BD
MM-97-D015
MM-97-D015
ic ca 810 audio amp
Samsung uhf modulator
KA2985
KA2985BD
20SOP300
uhf rf modulator
rf modulator
power supply samsung tv
samsung RF modulator
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Untitled
Abstract: No abstract text available
Text: Golledge Electronics Ltd Ashwell Park ILMINSTER Somerset TA19 9DX England Product Specification Tel: +44 1460 256 100 Fax: +44 1460 256 101 Email: [email protected] Web: www.golledge.com Clock Oscillator Part Number: MA06278 Associated Drawing Number: D0154-C
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MA06278
D0154-C
GXO-7531/X
40ppm
30yrs
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V370H1-L0A
Abstract: VIT70006
Text: HR I20L30003 INVERTER ORIGINAL REFER. EQUIVAL. VIT70006.80 27-D015041 I370H2-24A-V01 / I370H1-20B-L001A Dimensiones / size : 430mm x 125mm 1 24V 2 24V 3 24V Conector Control / Control Connector CN1 4 5 6 7 8 9 10 11 12 13 14 24V 24V GND GND GND GND GND Sel. E.pw. I.pw. on-off
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I20L30003
VIT70006
27-D015041
I370H2-24A-V01
I370H1-20B-L001A
430mm
125mm
V370H1-L0A
V370H1-L0A
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GXO-7531
Abstract: No abstract text available
Text: Golledge Electronics Ltd Ashwell Park ILMINSTER Somerset TA19 9DX England Product Specification Tel: +44 1460 256 100 Fax: +44 1460 256 101 Email: [email protected] Web: www.golledge.com Clock Oscillator Part Number: MA06278 Associated Drawing Number: D0154-C
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MA06278
D0154-C
GXO-7531/X
40ppm
30yrs
GXO-7531
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386d
Abstract: 386H 386M b10010 388F K50010 D0-15
Text: FAST RECOVERY RECTIFIERS r CASE PART NUM BER V lo* rrm Irrm V (jtXA) (A) @ Ta If S M @ 6 0 H z l 2t V fm <°C) (A) (A 2-Sec) (V) (A) 1 ? c lF , A T rrt 'os (n Sec) (A) 120 1.5 120 1.5 D015 387A 50 10 1.0 40 35 5 1.2 D015 387 B 100 10 1.0 40 35 5 1.2 D015
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120nSec
200nSec
386d
386H
386M
b10010
388F
K50010
D0-15
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Z6.8B
Abstract: Z12B Z9.1B DIODE Z8.2B Z6.2B C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B
Text: CENTRAL SEMICONDUCTOR n a “n t a qddqeöi 1 WATT ZENER DIODE CSBafiFi9l r S0oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Sorp, AXIAL LEAD D015 EPOXY CASE Central semiconductor Corp. C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88
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C1Z10B
C1Z11B
C1Z12B
C1Z13B
C1Z14B
CBR30
0000S23
O-105
O-106
Z6.8B
Z12B
Z9.1B
DIODE Z8.2B
Z6.2B
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M74ALS374P
Abstract: dd127 4d40t
Text: MITSUBISHI iDGTL LOGIC} TI 1mF | bSLHÖ27 D0155E5 5 MITSUBISHI ALSTTLs ,oC* M 74A LS374P OCTAL D-TYPE EDGE-TRIGGERED FLIP FLOP W ITH 3-STATE OUTPUT NONINVERTED 6249827 MITSUBISHI 9 1D 12525 (DGTL LOGIC) DESCRIPTION D PIN CONFIGURATION (TOP VIEW) T h e M 7 4 A L S 3 7 4 P is a s e m ic o n d u c to r in te g ra te d c irc u it
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D0155E5
LS374P
16P2P
16-PIN
150mil
T-90-20
20P2V
20-PIN
300mil
M74ALS374P
dd127
4d40t
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SP16K
Abstract: kmm5362003
Text: SAMSUNG ELECTRONICS b?E D INC • ? cJbmHH D015BbB bS7 I KMM5362003/G SP16K DRAM MODULES 2M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5362003/G is a 2M b itx 3 6 Dynamic RAM high density m em ory module. The Samsung
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D015BbB
SP16K
KMM5362003/G
KMM5362003-7
KMM5362003-8
110ns
150ns
in20-pin
SP16K
kmm5362003
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C2241
Abstract: HFM1010 7C127 c2431
Text: MODULES SSE » " 4S51fi3D D015b2R HO N E Y W E L L b32 « H O N l H O Iie V W e ll INC/ MICRO TRA N SM ITTER - r - Yt - 91 The H F M 20 10 and H F M 2 0 2 5 transmitter modules are designed to provide a tri-level 50% duty cycle optical output. With data formats compatible with M anchester encoded as well as N R Z. The H F M 20 10 , H F M 20 25 and H F M 21 10 allow the user to
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4S51fi3G
D015b2R
HFM2010
HFM2025
HFM2010,
HFM2110
C2241
HFM1010
7C127
c2431
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Untitled
Abstract: No abstract text available
Text: S G S-THOMSON 07E D I D015ttb 4 I H S-C M O S INTEGRATED CIRCUITS 7; ,' M irrai I ^ k '. 54 - M74HCT540 SUS 67C 13907 D T -5 2 PRODUCT PREVIEW OCTAL BUS BUFFER INVERTING, 3-STATE) D ESCRIPTIO N The M54HCT540/74HCT540 is a high speed C M O S O C T A L B U S B U F F E R (INVERTING,
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D015ttb
M54HCT540/74HCT540
M54HCT540/M74HCT540
54/74LS540
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSBTBl D015b31 0 ObE D BCW31 B e rn ? . BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.
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D015b31
BCW31
BCW33
BCW32
bhS3T31
0015b34
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in4818
Abstract: in4003 IN5399 IN4005 in5054 IN4007 IN4820 in4002 IN5392 IN4822
Text: r GENERAL PURPOSE RECTIFIERS CASE 1 AMP PART N UM BER V rrm V rsm I RRM •o* @ T a V (V) (JUA) (A) <°C) IFS M @ 60Hz (A) l2t (A 2-Sec.) V fm (V) @ lF (A) D015 IN4001 50 100 10 1.0 75 35 5 1 1 D015 IN4002 100 200 10 1.0 75 35 5 1 1 D015 IN4003 200 300 10
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IN4001
IN4002
IN4003
IN4004
IN4005
IN4006
IN4007
IN4816
IN48jl7
IN4818
IN5399
in5054
IN4820
IN5392
IN4822
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diode BY127 specifications
Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/
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00G3315
D041/D015
D0204/VP
GP10A
GP10B
GP10D
BYW27-50
BYW27-100
BYW27-200
BY135GP
diode BY127 specifications
GE diode 1N5061
diode by127
GP 524 DIODE
diode cross reference 1N4245
diode 1n5392
GP+524+DIODE
BYW27-40Q
D0201AD
1N4245
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI íDGTL LOGIcTtL ¿il ^54=1027 D015S31 0"T p -* • ■ MITSUBISHI ALSTTLs M 74A LS466A P 7 OCTAL BUFFER W ITH 3-STATE OUTPUT INVERTED 9 1D 12531 6249827 MITSUBISHI CDGTL LOGIC) DESCRIPTION The M74ALS466AP is a semiconductor integrated circuit
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M74ALS466AP
LS466A
--15mA)
16P2P
16-PIN
150mil
T-90-20
20P2V
20-PIN
300mil
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C
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bbS3T31
D0152D1
RX3034B70W
0D152D5
33-iS.
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Untitled
Abstract: No abstract text available
Text: H b132ñS5 D015D1Û 510 Numeric Display 1 Digit 11.0mm . 4 ” Series T y p e No. Lig h tin g C o lo r L N 5 1 4 Y A .A m b e r L N 5 1 4 Y K . A m b e r L N 5 1 4 0 A . O ra n g e
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D015D1Ã
LN514YA
LN514YK
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Untitled
Abstract: No abstract text available
Text: International 4055452 D015bS2 307 e Rectifier • INR PD-9.524D IRFR110 IRFU110 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR110 Straight Lead (IRFU110) Available in Tape & Reel Fast Switching Ease of Paralleling
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D015bS2
IRFR110
IRFU110
IRFR110)
IRFU110)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI -CDGTL LOGIC} TI ÖF|b241flS7 D0151ÖÜ 2 |~~ MITSUBISHI ASTTLs * * .,9 ^ 0 9 ° M 74A S 74P - r - e/ á > - o 7 - < ? £ ' DUAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP FLOP W ITH SET AND RESET DESCRIPTION The M74AS74P is a semiconductor integrated circuit
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b241flS7
D0151Ã
M74AS74P
DD1S171
24P4D
24-PIN
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Z9.1B
Abstract: Z62B Z6.2B Z8.2B Z82B Z6.8B CBR-12 DIODE Z8.2B z91b Z6,2B
Text: CENTRAL SEM ICOND UC TO R *~ t3 1 WATT ZENER DIODE CSBIfiFial S0Oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Corp. Central semiconductor Corp. AXIAL LEAD D015 EPOXY CASE C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88
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C1Z10B
C1Z11B
C1Z12B
C1Z13B
C1Z14B
C1Z15B
C1Z16B
C1Z17B
C1Z18B
C1Z19B
Z9.1B
Z62B
Z6.2B
Z8.2B
Z82B
Z6.8B
CBR-12
DIODE Z8.2B
z91b
Z6,2B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DISCRETE SC bSiHflST D015273 fll3 «tlITS blE T> MITSUBISHI RF POWER TRANSISTOR 2SC2798 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2 S C 2 7 9 8 is a s ilic o n N P N e p itaxia l plan ar ty p e t ra n sisto r d e sign e d fo r R F b ro a d -b a n d p o w e r a m p lifie rs in U H F band.
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D015273
2SC2798
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SJ 76 A DIODE
Abstract: irfip140 RG-910 AN972 3A diode International Rectifier
Text: " 44S5MS D0152,s 3bT" INR PD9742 IRFIP140 International k?r: Rectifier HEXFET P ow er M O S FE T • • • • • • • INTERNATIONAL RECTIFIER Isolated Package DC Package Isolation^ 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm
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44S5MS
IRFIP140
0-077Q
O-247
SJ 76 A DIODE
RG-910
AN972
3A diode International Rectifier
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2N7016
Abstract: CIL TRANSISTOR LD070
Text: lflE D SILICONIX INC « yS ilicon ix 'Silîcor _ • A55M735 D01512S 2 2N7016 J U f ilincorporated - T -3 ° i-n P-C h a n n e l Enhancem ent M o d e T ra n sisto r 4-PIN DIP Similar to TO-250 TO P VIEW PRODUCT SUMMARY V(8R|DSS -60 r o y 1.0 1 Œ 2 C •o
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8SSM73S
QQ1512S
2N7016
O-250)
025473s
CIL TRANSISTOR
LD070
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Untitled
Abstract: No abstract text available
Text: S7E D • ‘ïODl'iSH 0000027 IDIOT 734 BY 1 2 7 / 2 2 6 / 2 2 7 / 2 2 8 / 4 4 8 DIOTEC ELEKTRONISCHE?-,.,* Silicon Rectifier rtj h IO t Nominal current 1 A Repetitive peak / 4 5“‘ reverse voltage 450 - 800 V Plastic case according UL94VO J. -if Plastic case “S" D015 58A2
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UL94VO
002fl
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y SEMICONDS GEC PL E SS E Y SEMICONDUCTORS 43E D • 37böS2S D015fci34 4 H P L S B " T -' 77-0 ^ SEPTEM BER 1991 PRELIMINARY INFORMATION 1 Ü1S SL6649-1 200MHz DIRECT CONVERSION FSK DATA RECEIVER The SL6649-1 is a low power direct conversion radio
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D015fci34
SL6649-1
200MHz
SL6649-1
G015b45
37bfiS2S
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