1N1436
Abstract: 1N2021 1N1191 1N1192 1N1193 1N1194 1N1196 1N1197 1N1198 1N2154
Text: . ELITE SEMICONDUCTOR PRODUCTS, INC. 860North Richmond Ave. Lindenburst, New York 11757 PH 631-884-8400 I FX 631-884-8427 www.elitesemi.com STANDARD RECOVERY RECTIFIERS 40 amps - 50 to 1200 volts DO 5 DO203AB Peak Reverse Voltage JEDEC Numbers 1N1191,A
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DO203AB
1N1191
1N1192
1N1193
1N1194
1N119S
1N1301
1N1302
1N1304
1N2272
1N1436
1N2021
1N1196
1N1197
1N1198
1N2154
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R307010F
Abstract: 28-UNF-2A 28UNF-2A S307020F R307020F R307040F R307060F S307010F S307040F S307060F
Text: ir \ COORS COMPONENTS INC 1 fl5 2430006 COORS COMPONENTS D E I EM3D0Db aDDDDhS INC Silicon Power Rectifiers 85 A M P Avg; Series 307 to 600 Volts 8 2 0 00 06 5 o T-Ot-s* I Qlas3 to metal construction ' Low forward voltage drop Designed for a wide range of applications
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-28UNF-2A
D0-203AB
S307010F
R307010F
S307020F
R307020F
S307040F
R307040F
S307060F
R307060F
28-UNF-2A
28UNF-2A
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S30760
Abstract: R30720 R30740 R30760 S30720 S30740
Text: Silicon Power Rectifier S /R 3 0 7 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 / 4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is cathode Reverse polarity. Stud is anode P A B C D E F G H J K M
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S/R307
D0203AB
S30720
R30720
S30740
R30740
S30760
R30760
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61CMQ050
Abstract: 61-CMQ-050 120CNQ045 66PQ040 60CMQ050 60HQ100 60cmq 120CNQ030 130CNQ030 61-cmq
Text: I N T E RNfATIONAL H E RECTIFIER D I 4a 55452 ooiaoas1 i | Schottky Rectifiers 60 T O 160 A M P S Part Number ' f a v TC VR W M (A) <°C) 120 120 - fR M @ VFM ® Ti = 125SC& 'fm Rated V,RW M (mA) (A) Max. Tj Case Style <°C) 175 175 175 175 175 T0-204AE
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125SC&
60CDQ030
60CDQ035
SD241
60CDQ040
60CDQ045
60CMQ030
60CMQ035
60CMQ040
60CMQ045
61CMQ050
61-CMQ-050
120CNQ045
66PQ040
60CMQ050
60HQ100
60cmq
120CNQ030
130CNQ030
61-cmq
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D0-203AB
Abstract: d-u203 70HRR
Text: Bulletin 120202 10/96 International IO R Rectifier 70HF R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 70 A High surge current capability ■ Designed lor a wide range of applications ■ Stud cathode and stud anode version ■ Leaded version available
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UFR10260
Abstract: UFR10270 UFR10280
Text: Ultra Fast Recovery Rectifiers UFR10260 - UFR10280 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads - 'S 1 F 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode I A B C D E F G H J K
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UFR10260
UFR10280
D0203AB
UFR10260*
UFR10270*
UFR10280*
UFR10270
UFR10280
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1N1184
Abstract: 1N1184R 1N1186 1N1186R 1N1188 1N1188R 1N1190 1N1190R 1N3766 1N3768
Text: Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 / 4 - 2 8 U N F -3 A 2. Full th re ad s within 2 1 /2 threads 3. Standard Polarity; Stud is Cathode Reverse P olarity: Stud is Anode J_F L Ì A B C D E F G H J K M N P 1 .667 -.422
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\I3768
D0203AB
1N1184
1N1184R
1N1186
1N1186R
1N1188
1N1188R
1N1190
1N1190R
1N3766
1N3768
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50HQ035
Abstract: 50HQ040 51HQ035 51HQ040 DO-203AB MBR6035 MBR6040 SBR6035 SBR6040 SBR6045
Text: 60 Amp Schottky Rectifier SBR6035 - SBR6045 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes T" E _j_ Microsemi Catalog Number SBR6035* SBR6040* SBR6045* Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is
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SBR6035
DO-203AB
SBR6035*
50HQ035,
51HQ035
MBR6035
SBR6040*
50HQ040,
51HQ040
50HQ035
50HQ040
DO-203AB
MBR6040
SBR6040
SBR6045
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S3680
Abstract: S/R36 SERIES R3610 R3620 R3640 R3660 S3610 S3620 S3640 S3660
Text: Silicon Power Rectifier S/R36 Series Dim Inches M illimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 / 4 - 2 8 2. Full threads within 2 1/ 2 threads 3. Standard polarity: Stud is cathode Reverse polarity: Stud is anode Microsemi Catalog Number Standard
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S/R36
D0203AB
S3610
R3610
S3620
R3620
S3640
R3640
S3660
R3660
S3680
S/R36 SERIES
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SBR6030
Abstract: No abstract text available
Text: 60 Amp Schottky Rectifier SBR60 Series Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes _ - A B .677 c Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity. Stud is Cathode Reverse Polarity: Stud is Anode Microsemi Catalog Number
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SBR60
D0203AB
SBR6030
SBR6035
SBR60
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UFR8630
Abstract: UFR8640 UFR8650 R8630
Text: Ultra Fast FRecovery Rectifiers UFR8630 UFR8650 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. Full th re a d s w ithin 2 1 /2 threads in. n j F t 2. Standard P olarity: Stud is Cathode Reverse P olarity: Stud is Anode A B C D E F
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R8630
UFR8650
D0203AB
UFR8630*
UFR8640*
UFR8650*
UFR8630
UFR8630
UFR8640
UFR8650
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1N21
Abstract: 1N2128 1N2129 S35100 S35120 S35140 S35160 S3520 S3540 S3560
Text: Silicon Power Rectifier S/R35 D im . In c h e s M inim u m -1 p H 1 r I- w ^ A B C D E F G H J K 1t t 1 r n. 1 ~1 A M ic ro s e m i C a ta lo g N u m b e r 1 n G 1 r E 1 N o te s : 1. 1 / 4 - 2 8 2 . Full th r e a d s w ithin 2 1 / 2 th re a d s 3 . S ta n d a rd p o la rity :
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S/R35
S3520
S3540
S3560
S3580
S35100
S35120
S35140
S35160
1N2128
1N21
1N2129
S35100
S35120
S35140
S35160
S3520
S3540
S3560
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1N3909
Abstract: 1N3910 1N3911 1N3912 1N3913 AN3913 a3909 1N3913 JAN
Text: Military Fast Recovery Rectifier 1N3909 - 1N3913 Dim. Inches M illimeter Minimum Maximum Minimum Maximum Notes C -J |1 H T 1 i a rl— i , -b + ! Notes: 1. 1 / 4 - 2 8 UNF3A threads 2. Full threads within 2 1 /2 threads 3. Standard Polarity; Stud is Cathode
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N3909
1N3913
D0203AB
1N3909*
1N3910*
1N3911*
1N3912*
1N3913*
1N3909
1N3910
1N3911
1N3912
1N3913
AN3913
a3909
1N3913 JAN
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5900AS
Abstract: R306120 R30620 R30640 R30660 R30680 S306100 S30620 S30640 S30660
Text: Silicon P o w er Rectifier S/R306 Series Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 /4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is cathode Reverse polarity: Stud is anode A B C D E F G H J K M N P
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S/R306
D0203AB
S30620
R30620
S30640
R30640
S30660
R30660
S30680
R30680
5900AS
R306120
S306100
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DIODE SD51
Abstract: 12v zener diode JEDEC 1N SD51
Text: 1N6097 1N6098 SD51 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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1N6097
1N6098
DIODE SD51
12v zener diode JEDEC 1N
SD51
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M 4 3171 opto
Abstract: 9571 gh opto 3171 MBR6545 3171 opto SOT223 6 pin
Text: MOTOROLA MBR6535 MBR6545 SEMICONDUCTOR TECHNICAL DATA MBR6545 is a Motorola Preferred Device Switchmode Power Rectifiers . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
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MBR6535
MBR6545
MBR6545
DO-35
M 4 3171 opto
9571 gh
opto 3171
3171 opto
SOT223 6 pin
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NS 8002 1151
Abstract: TO-66 CASE
Text: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications
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MIL-S-19500/379
O-116)
NS 8002 1151
TO-66 CASE
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245A-02
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per
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h3b7254
MIL-S-19500/
O-116)
245A-02
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R3820
Abstract: R3840 R3860 R3880 S38100 S3820 S3840 S3860 S3880 unf-3a
Text: Silicon Power Rectifier S /R 38 Series Dim Inches M illimeter Minimum Maximum Minimum Maximum Notes i'iNotes: 1. 1 / 4 - 2 8 U N F-3A 2. Full threads within 2 1 /2 threads 3. For Reverse P olarity add R to Part Number Standard Polarity: Stud is Cathode Reverse polarity: Stud is
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S/R38
D0203AB
S3820
R3820
S3840
R3840
S3860
R3860
S3880
R3880
S38100
unf-3a
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C-113
Abstract: SBR8210 SBR8215
Text: Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1/2 threads 2. Standard Polarity: Stu d Is Cathode A B C D E F G H J K _ - .677 .432 .125 .323 .220 - to N p _ .687 .793 1.00 .442 .135 .450 .249 .375
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D0203AB
SBR8210
SBR8215
C-113
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thermal d242
Abstract: IRFP460 SWITCHING FREQUENCY 50HQ rectifier diode 20 amp 800 volt D242 50HQ035 50HQ040 50HQ045 DO-203AB D239
Text: P D -2.032E International [Kœ] Rectifier s o h q . s e r ie s SCHOTTKY RECTIFIER 60 Amp Description/Features Major Ratings and Characteristics Characteristics 50HQ. Units lF AV Rectangular waveform 60 A 35 to 45 V 10,800 A 0.53 V -65 to 150 °C VRRM
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D-241
IRFP460
40hfl40s02
D-242
thermal d242
IRFP460 SWITCHING FREQUENCY
50HQ
rectifier diode 20 amp 800 volt
D242
50HQ035
50HQ040
50HQ045
DO-203AB
D239
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1N3909A
Abstract: 1N3910A 1N3911A 1N3913A 1 J 250 IN3912A
Text: Military Fast Recovery Rectifier 1N3909A - 1N3913A Dim M illim e te r Inches M inim um M axim um M inim um M axim um N otes A B C N otes: 1. Kull th re a d s w ith in 2 1 / 2 th re a d s 2. S ta n d a rd P o la rity: S tud is C athode E F G H J K M N P -
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1N3909A
1N3913A
D0203AB
1N3909A.
1N3910A*
1N3911A*
IN3912A*
1N3913A*
1N3910A
1N3911A
1 J 250
IN3912A
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1N3766-1N3768
Abstract: 1N1184 1N1184R 1N1186R 1N1188 1N1188R 1N1190 1N1190R INI186
Text: Military Silicon Power Rectifier 1N1184-1N1190, 1N3766— 1N3768 Dim. In ch e s Millim eter M inim um M a xim u m M inim um M axim u m N o te s Notes: 1. 1 / 4 - 2 8 U N F - 3 A 2. Full t h re a d s within 2 1 / 2 th re a d s 3* For R e v e rse P o larity add F
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1N1184-1
1N3766-1N3768
D0203AB
1N1184
1N1184R
INI186
1N1186R
1N1188
1N1188R
1N1190
1N1190R
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1N5332
Abstract: 1N1184 1N1186 1N2459 1N2461 1N2788 1N3968 S3410 S3420 1N245
Text: Silicon Power Rectifier S / R 3 4 Series Dim. In ch e s Millim eter Minim um M a xim u m M inim um M o xim u m N o te s A B C D E F G H J K M N P N otes: 1. Full t h r e a d s w ithin 2 1/2 th re a d s 2. S ta n d a rd Polarity: S tu d is C a th o d e R eve rse Polarity: S tu d is
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S/R34
D0203AB
S3410
1N1184,
1N2459
S3420
1N1186,
1N2461,
1N2788,
1N3968
1N5332
1N1184
1N1186
1N2461
1N2788
1N245
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